CMOS 741 Search Results

Contextual Info: Preliminary KM68FV2000, KM68FS2000. KM68FR2000 Family CMOS SRAM 256Kx8 bit Super Low Vcc High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION Process Technology : 0.4 um Full CMOS The KM68FV2000, KM68FS2000 and KM68FR2000 Organization : 256K x 8

Contextual Info: CY7C340 EPLD Family CYPRESS SEMICONDUCTOR • Erasable, user-configurable CMOS EPLDs capable o f implementing highdensity custom logic functions • 0.8-micron double-metal CMOS EPROM technology CY7C34X • Advanced 0.65-micron CMOS technology to increase performance

mcm2018a

Abstract: sun hold RAS 0610 cqq 765 RT IC HX 710B U256D
Contextual Info: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information

64kx4

Abstract: HY51C264-12 strobe w24 64Kx4-Bit
Contextual Info: ▲ HY51C264 64K x4-Bit Dual Port CMOS RAM HYUNDAI SEMICONDUCTOR OCTOBER 1986 DESCRIPTION The Hyundai HY51C264 is high-speed, dual access 262, 144 bit 256K CMOS dynamic random-access memory components. Fabricated with CMOS technology, the HY51C264 offers TURBOMODE

Contextual Info: General Description Features BiCMOS technology gives the MIC5821/5822 family flexibil­ ity beyond the reach of standard logic buffers and power driver arrays. These devices each have an eight-bit CMOS shift register, CMOS control circuitry, eight CMOS data

7413

Contextual Info: Ordering number : 2 5 2 2 CMOS LSI LC7412/7413 VTR Servo Digital Controller

C3402

Abstract: 74151 5128LC-1 74151 PIN DIAGRAM 5128LC-2 74151 8 to 1 74151 pin connection function of 74151 22V10-10C CY7C340
Contextual Info: EPLD CY7C340 EPLD Family Multiple Array Matrix High-Density EPLDs Features • Erasable, user-configurable CMOS EPLDs capable of implementing high-density custom logic functions • 0.8-micron double-metal CMOS EPROM technology CY7C34X • Advanced 0.65-micron CMOS technology to increase

Contextual Info: Am29CPL151H-25/33 Advanced Micro Devices CMOS 64-Word Field-Programmable Controller FPC DISTINCTIVE CHARACTERISTICS • Implements complex state machines ■ Up to 33-MHz maximum frequency ■ High-speed, low-power CMOS EPROM technology ■ 64-word by 32-bit CMOS EPROM

Contextual Info: HY51C264 HYUNDAI ▲ SEMICONDUCTOR 64K x4-B it Dual Port CMOS RAM OCTOBER 1986 DESCRIPTION FEATURES The Hyundai HY51C264 is high-speed, dual access 262, 144 bit 256K CMOS dynamic random-access memory components. Fabricated with CMOS technology, the HY51C264 offers TURBOMODE

ROJ-20

Contextual Info: PRELIMINARY HY61C68 HYUNDAI SEMICONDUCTOR 4096x4-Bit CMOS Static RAM OCTOBER 1986 DESCRIPTION The HY61C68 is a high speed, low power, 4096-word by 4-bit static CMOS RAM fabricated using highperformance CMOS process technology. This high reliability process coupled with innovative circuit

74151 PIN DIAGRAM

Abstract: 74151 22v10 5192JM CY7C340 PRODUCT CHANGE PALC22V10B programmer EPLD CY7C340 CY7C341B CY7C342B
Contextual Info: 40 EPLD CY7C340 EPLD Family Multiple Array Matrix High-Density EPLDs Features • Erasable, user-configurable CMOS EPLDs capable of implementing high-density custom logic functions • 0.8-micron double-metal CMOS EPROM technology CY7C34X • Advanced 0.65-micron CMOS technology to increase

Contextual Info: - PRELIMINARYApril 1996 Edition 2.2 _ PRODUCT PROFILE SHEET - C P - FUJITSU MB81V17800A-60/-70 CMOS 2M X 8BIT FAST PAGE MODE DYNAMIC RAM CMOS 2,097,152 x 8BIT Fast Page Mode Dynamic RAM The Fujitsu MB81V17800A is a fully decoded CMOS Dynamic RAM DRAM that contains

74175 truth table

Abstract: 74175 chip W2465S-70LL W2465-70 W2465 W2465-10 W2465-10L W2465-70LL W2465K-10L W2465K-70LL
Contextual Info: W2465 8K x 8 CMOS STATIC RAM GENERAL DESCRIPTION The W2465 is a slow-speed, low-power CMOS static RAM organized as 8192 × 8 bits that operates on a single 5-volt power supply. This device is manufactured using Winbond's high performance CMOS technology.

60c31

Abstract: 74HC74 74HCT-Logic 80C31HB 27C2M EPROM 27C256 interface hardware 74HC cmos family spec
Contextual Info: CHAPTER 7 80C51 Family Designing with the 80C51BH CMOS EVOLVES The original CMOS logic families were the 4000-series and the 74C-series circuits. The 74C-series circuits are functional equivalents to the correspondingly numbered 74-series TTL circuits, but have CMOS logic levels and

W2465S

Abstract: W2465S-70LL W2465S-10L W2465K-70LL W2465 W2465-10 W2465-10L W2465-70 W2465-70LL W2465K-10L
Contextual Info: W2465 8K x 8 CMOS STATIC RAM GENERAL DESCRIPTION The W2465 is a slow-speed, low-power CMOS static RAM organized as 8192 × 8 bits that operates on a single 5-volt power supply. This device is manufactured using Winbond's high performance CMOS technology.

Contextual Info: TOSHIBA TC518129APL/AFL/AFWLr80LV/10LV/12LV TC518129AFTLÍ0LV/10LV/12LV SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129A-LV is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129A-LV

28F512-90

Abstract: 28F512 A12C A15C CAT28F512 28f512-12
Contextual Info: CATALYST L icen sed In tel second so u rce CAT28F512 512K-Bit CMOS Flash Memory FEATURES Commercial, Industrial and Automotive Tem ­ perature Ranges • Fast Read Access Time: 90/120/150 ns ■ Low Power CMOS Dissipation: -A ctive: 30 mA max CMOS/TTL levels

Contextual Info: - PRELIMINARYMarch 1995 Edition 2.1 FUJITSU PRO DUCT PROFILE SHEET MB 8 116160 A- 60/-70 CMOS 1M X 16BIT FAST PAGE MODE DYNAMIC RAM CMOS 1,048,576 x 16BIT Fast Page Mode Dynamic RAM The Fujitsu MB8116160A is a fully decoded CMOS Dynamic RAM DRAM that contains

Contextual Info: msm& FUJITSU SEMICONDUCTOR DATA SHEET MEMORY CMOS 512K x 8 BIT FAST PAGE MODE DYNAMIC RAM M B814800-60/-70 CMOS 524,288 x 8 BIT Fast Page Mode Dynamic RAM DESCRIPTION The Fujitsu MB814800 is a fully decoded CMOS Dynamic RAM DRAM that contains 4,194,304 memory cells

233Q

Contextual Info: KM41C16100L CMOS DRAM 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C16100L is a CMOS high speed 16,777,216 x 1 Dynamic Random Access Memory. Its de­ sign is optimized for high performance applications

Contextual Info: L icen sed In tel second source C A T2 8 F5 1 2 512K-Bit CMOS Flash M em ory FEATURES • Fast Read Access Time: 90/120/150 ns ■ Low Power CMOS Dissipation: -A c tiv e : 30 mA max CMOS/TTL levels -S ta n d b y: 1 mA max (TTL levels) -S ta n d b y: 100 jiA max (CMOS levels)

MIC5822AJ

Abstract: M1C5821BN
Contextual Info: MIC5821/5822 8-Bit Serial-Input Latched Drivers General D escription Features BiCMOS technology gives the MIC5821/5822 family flexibil­ ity beyond the reach of standard logic buffers and power driver arrays. These devices each have an eight-bit CMOS shift register, CMOS control circuitry, eight CMOS data

MIC5821

Contextual Info: MIC5821 5822 8-Bit Serial-Input Latched Drivers General Description Features BiCMOS technology gives the MIC5821/5822 family flexibil­ ity beyond the reach of standard logic buffers and power driver arrays. These devices each have an eight-bit CMOS shift register, CMOS control circuitry, eight CMOS data

lz 21001

Abstract: 28F512 CAT28F512 200 ns CAT28F512NI-90T A12C A15C CAT28F512
Contextual Info: L icen sed In tel second source C A T2 8 F5 1 2 512K-Bit CMOS Flash Memory FEATURES • Commercial, Industrial and Automotive Tem ­ perature Ranges ■ Fast Read Access Time: 90/120/150 ns ■ Low Power CMOS Dissipation: -A ctive: 30 mA max CMOS/TTL levels