CMOS 512K RAM Search Results

IC 2822

Abstract: IDT7M4048 7M40 ex 2822 cs107
Contextual Info: 512K x 8 CMOS STATIC RAM MODULE IDT7M4048 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-density 4 megabit CMOS Static RAM module The IDT7M4048 is a 4 megabit 512K x 8 CMOS Static RAM module constructed on a co-fired ceramic substrate

SRAM 64KX8 5V

Abstract: EDI8M864C A012C 64Kx8 bit CMOS Static RAM
Contextual Info: moi _ EDI8M864C Electronic D *tlgn * Inc. High Performance 512K SRAM Module 64Kx8 Static RAM CMOS, Module Features The EDI8M864C is a 512K bit CMOS Static RAM 64Kx8 bit CMOS Static based on two 32Kx8 Static RAMs in leadless chip Random Access Memory

Contextual Info: 4 MEGABIT 512K x 8 CMOS STATIC RAM PLASTIC SIP MODULE IDT7MP4008S FEATURES: DESCRIPTION: • High-density 4 megabit (512K x 8) CMOS static RAM module The IDT7MP4008 is a 4 megabit (512K x 8-bit) high-speed static RAM module constructed on an epoxy laminate surface using six­

Contextual Info: _EDI8M864C m o i Electronic D«*lgn> Inc. High Performance 512K SRAM Module 64Kx8 Static RAM CMOS, Module Features The EDI8M864C is a 512K bit CMOS Static RAM 64Kx8 bit CMOS Static based on two 32Kx8 Static RAMs in leadless chip Random Access Memory

1702 eprom programmer

Abstract: TAA 761 A HV Component Associates 512K8 1702 eprom 1702 EPROM data sheet AS29F040-120LC as29f040-55lc AS29F040-70LC eprom 1702
Contextual Info: High Performance 512Kx8 5V CMOS Flash EEPROM AS29F040 512K×8 CMOS Flash EEPROM Preliminary information Features • Low power consumption • Organization: 512K×8 • Sector architecture - 30 mA maximum read current - 60 mA maximum program current - 50 µA typical standby current

PCMCIA CARD, Static Memory, write protect switch

Abstract: PCMCIA CARD, Static Memory, write protect switch, PCMCIA SRAM Memory Card 512k 128k sram card 60 pin battery
Contextual Info: PCMCIA/JEIDA LOW VOLTAGE STATIC RAM 1. VARIATION Memory Size 64K 128K 256K 512K 1M 2M BYTE BYTE BYTE BYTE BYTE BYTE Description 32K x 64K x 128K x 256K x 512K x 1M x 16 16 16 16 16 16 bit bit bit bit bit bit MIX MIX MIX MIX MIX MIX CMOS CMOS CMOS CMOS CMOS

29f400

Abstract: flash 29f400 1702 eprom MD 202 1702 eprom programmer AN 5011 P HV Component Associates 512KO J-Squared Technologies 29F400-90
Contextual Info: High Performance 512Kx8/256K×16 5V CMOS Flash EEPROM AS29F400 512K×8/256K×16 CMOS Flash EEPROM Preliminary information Features • Organization: 512K×8 or 256K×16 • Sector architecture • Low power consumption - 35 mA maximum read current - 60 mA maximum program current

7M4048

Abstract: cmos static ram 512k 5v TA 7074 idt CMOS RAM lccs 28 footprint 2822 IDT7M4048
Contextual Info:  512K x 8 CMOS STATIC RAM MODULE IDT7M4048 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-density 4 megabit CMOS Static RAM module • Equivalent to the JEDEC standard for future monolithic 512K x 8 StaticRAMs • Fast access time: 25ns max.

8M624

Contextual Info: 1 MEGABIT 64K x 16-BIT & 512K (32K x 16-BIT) CM O S STATIC RAM M ODULE IDT8M624S IDT8M612S FEATURES: DESCRIPTION: • High-density 1024K/512K-bit CMOS static RAM module The IDT8M624S/IDT8M612S are 1024K/512K-bit high-speed CMOS static RAMs constructed on a multi-layered ceramicsubstrate using four IDT71256 32K x 8 static RAMs (IDT8M624S) or

2822

Abstract: IDT7M4048 7M4048 cmos static ram 512k 5v
Contextual Info: 512K x 8 CMOS STATIC RAM MODULE IDT7M4048 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-density 4 megabit CMOS Static RAM module • Equivalent to the JEDEC standard for future monolithic 512K x 8 StaticRAMs • Fast access time: 25ns max.

static ram 64kx8

Abstract: EDI8M864C
Contextual Info: 23EDI EDI8M864C Electronic D«tigna Inc. • High Performance 512K SRAM Module 64Kx8 Static RAM CMOS, Module Features The EDI8M864C is a 512K bit CMOS Static RAM 64Kx8 bit CMOS Static based on two 32Kx8 Static RAMs in leadless chip Random Access Memory carriers mounted on a multi-layered ceramic substrate.

Contextual Info: IDT7MB4048 512K x 8 CMOS STATIC RAM MODULE Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-density 4-megabit 512K x 8 Static RAM module The IDT7MB4048 Is a 4-megabit (512K x 8) Static RAM module constructed on a multilayer epoxy laminate (FR-4)

7M4048

Abstract: IDT7M4048
Contextual Info: bflE •I 4325771 0014401 3t,T IDTIDT7M4048 IDT7MB4048 512K x 8 CMOS STATIC RAM MODULE INTEGRATED DEVICE. FEATURES: DESCRIPTION: • High-density 4-megabit 512K x 8 Static RAM module • Equivalent to the JEDEC standard for future monolithic 512K x 8 Static RAMs

eram 32kx8

Abstract: ic 4570 PINOUT
Contextual Info: ^EDI / EDI8M864C Electronic D*#lçn* Inc. • High Performance 512K SRAM Module 64Kx8 Static RAM CMOS, Module Features The EDI8M864C is a 512K bit CMOS Static RAM 64Kx8 bit CMOS Static based on two 32Kx8 Static RAMs in leadless chip Random Access Memor carriers mounted on a multi-layered ceramic substrate.

IDT71V424

Abstract: IDT71V424L IDT71V424S PH44 71V424
Contextual Info: ADVANCE INFORMATION IDT71V424S IDT71V424L 3.3V CMOS STATIC RAM 4 MEG 512K x 8-BIT Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 512K x 8 advanced high-speed CMOS Static RAM • JEDEC Center Power / GND pinout for reduced noise • Equal access and cycle times

C27A8

Abstract: EDI8M864C
Contextual Info: _ EDI8M864C m ö \ Electronic D«tlgn> In c High Performance 512K SRAM Module 64Kx8 Static RAM CMOS, Module Features The EDI8M864C is a 512K bit CMOS Static RAM based on two 32Kx8 Static RAMs in leadless chip carriers mounted on a multi-layered ceramic substrate.

71V424

Abstract: 512K x 8 bit Low Power CMOS Static RAM 512k x 8 chip block diagram IDT71V424 3622 A18-A0
Contextual Info: ADVANCE INFORMATION IDT71V424 3.3V CMOS STATIC RAM 4 MEG 512K x 8-BIT Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 512K x 8 advanced high-speed CMOS Static RAM • JEDEC Center Power / GND pinout for reduced noise • Equal access and cycle times

Contextual Info: IDT7M4048 IDT7MB4048 512K x 8 BiCMOS/CMOS STATIC RAM MODULE In teg rated Device T echnology, Inc. FEATURES: DESCRIPTION: • High density 4 megabit 512K x 8 static RAM module • Equivalent to the JEDEC standard for future monolithic 512K x 8 static RAMs

Contextual Info: ADVANCE INFORMATION IDT71V424 3.3V CMOS STATIC RAM 4 MEG 512K x 8-BIT Integrated Device Technology, Inc. FEATURES: DESCRIPTION: » 512K x 8 advanced high-speed CMOS Static RAM • JEDEC Center Power / GND pinout for reduced noise • Equal access and cycle times

Contextual Info: 3.3V CMOS STATIC RAM 4 MEG 512K x 8-BIT ADVANCE INFORMATION IDT71V424 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 512K x 8 advanced high-speed CMOS Static RAM • JEDEC Center Power / GND pinout for reduced noise • Equal access and cycle times

L1122

Contextual Info: 512K X 8 CMOS STATIC RAM MODULE IDT7M4048 Integrated Device Technology, inc. FEATURES: DESCRIPTION: • High-density 4 megabit CMOS Static RAM module The IDT7M4048 is a 4 megabit 512K x 8 CM OS Static RAM module constructed on a co-fired ceramic substrate

Contextual Info: JUL *6 »93 SM532512 2MByte 512K X32 CMOS DRAM Module General Description Features The SM532512 is a high performance, 2-megabyte dynamic RAM module organized as 512K words by 32 bits, in a 72-pin, leadless, SIMM package. The module utilizes sixteen CMOS 256Kx4 dynamic

Contextual Info: MOSEL MS6M 8512 PRELIMINARY 512K x 8 CMOS Static RAM Module FEATURES DESCRIPTION • 4Mb SRAM module compatible with JEDEC standard pinout for 512k x 8 SRAM The Mosel MS6M8512 is a 4 Megabit 4,194,304 bits static random access memory module organized as 512K

Contextual Info: 512K x 8 CMOS STATIC RAM MODULE PRELIMINARY IDT7M4048 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High density 4 megabit CMOS static RAM module • Equivalent to the JEDEC standard for future monolithic 512K x 8 static RAMs • Fast access time: 17ns max.