7M40 Search Results

Contextual Info: TQM 7M4004 Preliminary data sheet 3V Dual-Band E-GSM/DCS Power Amplifier Module Description: Package Outline: Advanced dual-band, compact 3V power amplifier module designed for mobile handset applications. The small size and high performance is achieved with high-reliability

Contextual Info: Integrated Device Technology. Inc 4 M EG ABIT 256K x 16 C M O S STATIC RAM M O DULE INFOrm ™ n i d t 7M4016 FEATURES: DESCRIPTION: • High-denslty 4 megabit (256K x 16) CMOS static RAM module • Low power consumption • Utilizes 16 IDT71257 high-performance 256K x 1 CMOS static

C352

Abstract: GSM900 Load cell gsm 030818
Contextual Info: TQM 7M4009 Preliminary data sheet 3V Quad-Band GSM850/GSM900/DCS/PCS Power Amplifier Module Package Outline: Advanced quad-band, compact 3V power amplifier module designed for mobile handset applications. The small size and high performance is achieved with high-reliability InGaP HBT

Contextual Info: TQM 7M4009 Preliminary data sheet 3V Tri-Band GSM900/DCS/PCS Power Amplifier Module Package Outline: Advanced tri-band, compact 3V power amplifier module designed for mobile handset applications. The small size and high performance is achieved with high-reliability InGaP HBT

Contextual Info: TQM 7M4014 3V Quad-Band GSM850/GSM900/DCS/PCS Power Amplifier Module Description: TQS 7M4014 C352 0301 A213505 1.32±.10 6.9 2.4 3.1 3.9 4.5 5.3 5.9 0.9 1.6 9.9 9.1 8.4 8.5 7.6 6.9 6.1 5.4 4.6 3.9 3.1 2.4 1.5 1.6 0.9 0.1 Description: 4.0 1.6 0,0 Vcc2 The module incorporates two highly-integrated InGaP power

M9137

Contextual Info: I N T E G R A T E D DE VI CE 14E D • 4 Ô 2 5 7 7 1 GDG441L, 5 PRELIMINARY IDT 7M4016 4 MEGABIT 256KX 16 CMOS STATIC RAM MODULE T - V 6 '2 3 'lH FEATURES: DESCRIPTION: • High-density 4 megabit (256K x 16) C M O S static RAM module The 7M4016 Is a 4-megablt high-speed C M O S static RAM

7M40J

Abstract: MC9S08QE4 MC9S08QE8 MSE9S08QE8
Contextual Info: Freescale Semiconductor Mask Set Errata 7M40J Rev. 1, 5/2010 Mask Set Errata for Mask 7M40J Introduction This report applies to mask 7M40J for these products: • MC9S08QE8 • MC9S08QE4 SE184-FLVD-STOP3: False low voltage detect when exiting stop3

C352

Abstract: GSM900 Load cell gsm
Contextual Info: TQM 7M4014 3V Quad-Band GSM850/GSM900/DCS/PCS Power Amplifier Module Package Outline: Description: TQS Advanced quad-band, compact 3V power amplifier module designed for mobile handset applications. The small size and high performance is achieved with high-reliability InGaP HBT

Contextual Info: TQM 7M4014 3V Quad-Band GSM850/GSM900/DCS/PCS Power Amplifier Module Package Outline: Advanced quad-band, compact 3V power amplifier module designed for mobile handset applications. The small size and high performance is achieved with high-reliability InGaP HBT

7M4009

Abstract: MAX 1785
Contextual Info: TQM 7M4009 Preliminary data sheet 3V Tri-Band GSM900/DCS/PCS Power Amplifier Module Package Outline: Advanced tri-band, compact 3V power amplifier module designed for mobile handset applications. The small size and high performance is achieved with high-reliability InGaP HBT

Contextual Info: PRELIMINARY IDT 7M4016 4 MEGABIT 256K x16 CMOS STATIC RAM MODULE FEATURES: DESCRIPTION: • H lg h-density 4 m eg abit (256K x 16) C M O S static RAM m odule • Lo w p ow er co nsum p tio n T h e ID T7 M 4 0 16 is a 4-m egabit h ig h -sp eed C M O S static RAM

Contextual Info: TQM 7M4014 Preliminary data sheet 3V Tri-Band E-GSM/DCS/PCS Power Amplifier Module Package Outline: Advanced tri-band, compact 3V power amplifier module designed for mobile handset applications. The small size and high performance is achieved with high-reliability InGaP HBT

APC interface dcs

Contextual Info: TQM 7M4008 Preliminary data sheet 3V Dual-Band E-GSM/DCS Power Amplifier Module Description: Package Outline: Advanced dual-band, compact 3V power amplifier module designed for mobile handset applications. The small size and high performance is achieved with high-reliability

Contextual Info: 7M4048 IDT7MB4048 512K x 8 BiCMOS/CMOS STATIC RAM MODULE Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High density 4 megabit 512K x 8 static RAM module • Equivalent to the JEDEC standard for future monolithic 512K x 8 static RAMs • Fast access time: 15ns (max.)

IDT7M4084

Abstract: 7095 dip 7M4084
Contextual Info: PRELIMINARY 7M4084 2M x 8 CMOS STATIC RAM MODULE Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • • High-density 16 megabit 2M x 8 Static RAM module Equivalent to the JEDEC standard for future monolithic Fast access time: 55ns (max.)

chn 711

Abstract: 0V358
Contextual Info: PRELIMINARY IDT7M 4084 2M x 8 CMOS STATIC RAM M OD UL E FEATURES: DESCRIPTION: • • • • T h e ID T 7 M 4 0 8 4 is a 16 megabit 2M x 8 Static RAM module constructed on a co-tired ceramic substrate using tour 5 12K x 8 Static R A M s and a decoder. T he ID T 7 M 4 0 8 4

GG1Q

Abstract: GG1Q171
Contextual Info: INTEGRATE» DEVICE m 47E D Mâ2S7?l GG1Q171 b • IDT 7M4068 IDT7MB40G8 256K x 8 BiCMOS/CMOS STATIC RAM MODULE Integrated D evice T ech no logy, Inc. FEATURES: DESCRIPTION: • High density 2 megabit C M O S static RAM module • Equivalent to the JE D E C standard for future monolithic

Contextual Info: Cologne Chip XHFC - 2SU Extended ISDN HDLC FIFO controller with two Universal ISDN Ports Data Sheet June 2012 Cologne Chip AG Eintrachtstrasse 113 D - 50668 Köln Germany Tel.: +49 0 221 / 91 24-0 Fax: +49 (0) 221 / 91 24-100 http://www.CologneChip.com http://www.CologneChip.de

7M4048

Abstract: IDT7M4048
Contextual Info: bflE •I 4325771 0014401 3t,T 7M4048 IDT7MB4048 512K x 8 CMOS STATIC RAM MODULE INTEGRATED DEVICE. FEATURES: DESCRIPTION: • High-density 4-megabit 512K x 8 Static RAM module • Equivalent to the JEDEC standard for future monolithic 512K x 8 Static RAMs

ATPA

Abstract: 7130SA100P 24l01 7C263/4-35C 7164S15Y cy9122-25 7133SA35J 7142sa55 7130sa55p cy2149-45c
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2147-35C CY7C147-35C CY7C147-45C CY7C147-35C CY91L22-35C CY7C122-35C CY2147-45C CY2147-35C CY7C148-35C CY7C148-25C+ CY91L22-45C CY93L422AC CY2147-45C CY7C147-45C CY7C148-45C CY7C148-35C

81c78

Abstract: 7C291 5962-8515505RX 27PC256-12 PAL164A 8464C 5C6408 72018 39C10B MACH110 cross reference
Contextual Info: Product Line Cross Reference CYPRESS 2147-35C 2147-45C 2147-45C 2147-45M+ 2147-55C 2147-55M 2148-35C 2148-35C 2148-35M 2148-45C 2148-45C 2148-45M 2148-45M+ 2148-55C 2148-55C 2148-55M 2149-35C 2149-35C 2149-35M 2149-45C 2149-45M 2149-45M 2149-55C 2149-55C 2149-55M

Sw 2604

Abstract: 16kx8 static ram ttl 79r4600 4Kx8 Dual-Port Static RAM 4Kx4 SRAM 49c402 4kx8 sram SW 2603 sem 3040 ram 6116
Contextual Info: As of 10/10/95 Page 1 Product Selector Guide RISC Microprocessors and Embedded Control Products Product Product Description 32-bit RISC CPUs Speeds Pkgs Temp Volt Cache Other Data Doc ID Avail Speeds Pkgs Temp Volt Cache Other Data Doc ID Avail Support Chips for 32-bit CPUs

7M4048S35

Abstract: 7M4048L70N
Contextual Info: PRELIMINARY 7M4048 IDT7MB4048 512K x 8 CMOS STATIC RAM MODULE Integrated Device Technology, Inc. FEATURES: The ID T 7 M 4 0 4 8 /7 M B 4 0 4 8 Is a 4 m e gabit 5 1 2K x 8 static RAM m o dule c o n s tru c te d o n a c o -fire d ce ra m ic or multilayer epoxy laminate (FR-4) substrate using lour 1

Contextual Info: 512K x 8 CMOS STATIC RAM MODULE PRELIMINARY 7M4048 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High density 4 m eg ab it C M O S static R A M m odule T h e ID T 7 M 4 0 4 8 is a 4 m eg ab it 5 1 2 K x 8 C M O S static • Equivalent to the J E D E C stan dard for future monolithic