CMOS 40 Search Results

V62C3161024L

Contextual Info: V62C3161024L L Ultra Low Power 64K x 16 CMOS SRAM Features Functional Description • Ultra Low-power consumption - Active: 40mA ICC at 55ns - Stand-by: 5 µA (CMOS input/output) 1 µA (CMOS input/output, L version) TheV62C3161024L is a Low Power CMOS Static RAM

Contextual Info: PACKAGE DIMENSIONS CMOS DRAM PLASTIC DUAL IN-LINE PACKAGE 407 ELECTRONICS PACKAGE DIMENSIONS CMOS DRAM PLASTIC ZIGZAG IN-LINE PACKAGE 408 ELECTRONICS PACKAGE DIMENSIONS CMOS DRAM PLASTIC SMALL OUT-LINE J-LEAD 409 ELECTRONICS PACKAGE DIMENSIONS CMOS DRAM PLASTIC SMALL OUT-LINE J-LEAD

Contextual Info: Hitachi Bi-CMOS/CMOS Logic HD74BC/AC/HC/UH Series DATA BOOK HITACHI ADE-405-008

Contextual Info: FOD0708 Single Channel CMOS Optocoupler, FOD0738 Dual Channel CMOS Optocoupler Features • ■ ■ ■ ■ ■ ■ ■ ■ General Description +5V CMOS compatibility 15ns typical pulse width distortion 30ns max. pulse width distortion 40ns max. propagation delay skew

Contextual Info: • IDT 70S DG127M0 >402.5771 ■ D bbE Integrated Device Technology, Inc. FAST CMOS 16-BIT REGISTERED TRANSCEIVER FEATURES: > Common features: - 0.5 MICRON CMOS Technology - High-speed, low-power CMOS replacement for ABT functions Typical tsK o (Output Skew) < 250ps

Contextual Info: 37E J> INTERNATIONAL C M O S 40 40707 0000347 7 T-46-19-07 INTERNATIONAL CMOS TECHNOLOGY, INC. PEEL 18CV8-15/PEEL™18CV8-20 CMOS Programmable Electrically Erasable Logic Devic6 Features • Architectural Flexibility Advanced CMOS EEPROM Technology — —

Contextual Info: FM93C66 4K-Bit Serial CMOS EEPROM MICROWIRE Bus Interface General Description Features The FM93C66 device is 4096 bits of CMOS non-volatile electrically erasable memory organized as 256x16 bit array. They are fabricated using Fairchild Semiconductor's floating-gate CMOS

Contextual Info: CMOS SRAM KM64258C 65,536 WORDx4 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 12,15, 20ns Max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS) : 2mA(max.) Operating : KM64258C-12 : 150mA (max.) KM64258C-15 : 140mA (max.)

14504BG

Abstract: MC14504B MC14504BDG MC1450*B
Contextual Info: MC14504B Hex Level Shifter for TTL to CMOS or CMOS to CMOS The MC14504B is a hex non−inverting level shifter using CMOS technology. The level shifter will shift a TTL signal to CMOS logic levels for any CMOS supply voltage between 5 and 15 volts. A control

14504BG

Abstract: 14504B MC14504BCP MC14504 504B 948F MC14504B MC14504BCPG MC14504BD MC14504BDG
Contextual Info: MC14504B Hex Level Shifter for TTL to CMOS or CMOS to CMOS The MC14504B is a hex non−inverting level shifter using CMOS technology. The level shifter will shift a TTL signal to CMOS logic levels for any CMOS supply voltage between 5 and 15 volts. A control

14504B

Abstract: MC14504bcp MC14504B 504B 948F MC14504BD MC14504BDR2 MC14504BDT MC14504BF
Contextual Info: MC14504B Hex Level Shifter for TTL to CMOS or CMOS to CMOS The MC14504B is a hex non–inverting level shifter using CMOS technology. The level shifter will shift a TTL signal to CMOS logic levels for any CMOS supply voltage between 5 and 15 volts. A control

14504B

Abstract: 504B 948F MC14504B MC14504BCP MC14504BD MC14504BDR2 MC14504BDT MC14504BF
Contextual Info: MC14504B Hex Level Shifter for TTL to CMOS or CMOS to CMOS The MC14504B is a hex non–inverting level shifter using CMOS technology. The level shifter will shift a TTL signal to CMOS logic levels for any CMOS supply voltage between 5 and 15 volts. A control

5962-06203

Abstract: 5962-07210 "rad" sram
Contextual Info: Aeroflex 4M SRAM Industry Comparison 0.18µm CMOS Aeroflex 0.25µm Bulk CMOS 0.35µm CMOS SOI 0.25µm CMOS 0.18µm 0.25µm 0.35µm 0.25µm 66 MHz @ 15ns 512K x 8 15 ns -55° to 125°C 28MHz @ 30 ns 512K x 8 30ns(-550 to 1250C) 40 MHz @20ns 512K x 8 < 20 ns (-550 to 1250C)

Contextual Info: MC14504B Hex Level Shifter for TTL to CMOS or CMOS to CMOS The MC14504B is a hex non−inverting level shifter using CMOS technology. The level shifter will shift a TTL signal to CMOS logic levels for any CMOS supply voltage between 5 and 15 volts. A control

14504B

Abstract: MC14504B MC14504BCP
Contextual Info: MC14504B Hex Level Shifter for TTL to CMOS or CMOS to CMOS The MC14504B is a hex non−inverting level shifter using CMOS technology. The level shifter will shift a TTL signal to CMOS logic levels for any CMOS supply voltage between 5 and 15 volts. A control

MC14504

Abstract: 14504B MC14504BCP 504B MC14504B MC14504BD MC14504BDR2 MC14504BDT MC14504BF 948F
Contextual Info: MC14504B Hex Level Shifter for TTL to CMOS or CMOS to CMOS The MC14504B is a hex non–inverting level shifter using CMOS technology. The level shifter will shift a TTL signal to CMOS logic levels for any CMOS supply voltage between 5 and 15 volts. A control

14504BG

Abstract: MC14504BCP 14504B MC14504BD MC14504BDG 504B 948F MC14504B MC14504BCPG
Contextual Info: MC14504B Hex Level Shifter for TTL to CMOS or CMOS to CMOS The MC14504B is a hex non−inverting level shifter using CMOS technology. The level shifter will shift a TTL signal to CMOS logic levels for any CMOS supply voltage between 5 and 15 volts. A control

Contextual Info: & PIC16C64 Microchip 40 Pin EPROM-Based 8-Bit CMOS Microcontroller FEATURES CMOS technology • Low power, high speed CMOS EPROM technology • Fully static design • Wide operating voltage range: - Commercial: 2.5V to 6.0V - Industrial: 2.5V to 6.0V - Automotive: 2.5V to 6.0V

Contextual Info: KM6161002 CMOS SRAM 65,536 WORDx 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 17, 20ns Max. • Low Power Dissipation Standby (TTL) : 40mA (Max.) (CMOS) : 10mA (Max.) Operating : KM6161002-15 : 230mA (Max.) KM6161002-17 : 220mA (Max.)

Contextual Info: White Electronic Designs EDI8F8512C 512Kx8 STATIC RAM CMOS, MODULE FEATURES DESCRIPTION „ 512Kx8 bit CMOS Static The EDI8F8512C is a 4096K bit CMOS Static RAM based on four 128Kx8 or 256Kx4 high speed Static RAMs mounted on a multilayered epoxy laminate (FR4) substrate.

ROJ-20

Contextual Info: PRELIMINARY HY61C68 HYUNDAI SEMICONDUCTOR 4096x4-Bit CMOS Static RAM OCTOBER 1986 DESCRIPTION The HY61C68 is a high speed, low power, 4096-word by 4-bit static CMOS RAM fabricated using highperformance CMOS process technology. This high reliability process coupled with innovative circuit

Contextual Info: KM6161002 CMOS SRAM 65,536 WORDx 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 17, 20ns Max. • Low Power Dissipation Standby (TTL) : 40mA (Max.) (CMOS) : 10mA (Max.) Operating : KM6161002-15 : 230mA (Max.) KM6161002-17 : 220mA (Max.)

KM616V4002C

Abstract: KM616V4002
Contextual Info: KM616V4002C/CL, KM616V4002CI/CLI CMOS SRAM 256K x 16 Bit High-Speed CMOS Static RAM • Fast Access Time 10,12,15,20ns Max. • Low Power Dissipation Standby (TTL) : 40mA(Max.) (CMOS) : 10mA(Max.) 0.5mA(Max.) L-ver.only Operating KM616V4002C/CL - 10 : 170mA(Max.)

Contextual Info: W D EDI8F8512C I ELECTRONIC DESIGNS INC. Commercial Four Megabit SRAM Module 512Kx8 Static RAM Features CMOS, Module The EDI8F8512C is a 4096K bit CMOS Static RAM based on four 128Kx8 or256Kx4 high speed Static RAMs 512Kx8 bit CMOS Static Random Access Memory