CMOS 40 Search Results

lh57257

Abstract: IR2E31 IR2E01 IR2C07 IR2E27 IR2E24 IR2E19 IR2E31A IR3n06 IR2E02
Contextual Info: Index Model No. ARM7D CPU Core Bi-CMOS 1 27 40,42 _ _ CMOS CMOS CMOS CMOS CMOS 4A 5A 8 A AH D ID1 Series ID2 Series 40,42 40.42 40,42 40,42 40 B ü.’1*"! 14,15 14 m IR2339 IR2403 IR2406 IR2406G IR2410 IR2411 IR2415 IR2419 IR2420 IR2422 IR2425 IR2429

V62C3161024L

Contextual Info: V62C3161024L L Ultra Low Power 64K x 16 CMOS SRAM Features Functional Description • Ultra Low-power consumption - Active: 40mA ICC at 55ns - Stand-by: 5 µA (CMOS input/output) 1 µA (CMOS input/output, L version) TheV62C3161024L is a Low Power CMOS Static RAM

Contextual Info: PACKAGE DIMENSIONS CMOS DRAM PLASTIC DUAL IN-LINE PACKAGE 407 ELECTRONICS PACKAGE DIMENSIONS CMOS DRAM PLASTIC ZIGZAG IN-LINE PACKAGE 408 ELECTRONICS PACKAGE DIMENSIONS CMOS DRAM PLASTIC SMALL OUT-LINE J-LEAD 409 ELECTRONICS PACKAGE DIMENSIONS CMOS DRAM PLASTIC SMALL OUT-LINE J-LEAD

Contextual Info: Hitachi Bi-CMOS/CMOS Logic HD74BC/AC/HC/UH Series DATA BOOK HITACHI ADE-405-008

FM93C66

Abstract: FM93C66E FM93C66V M08A MTC08
Contextual Info: SEM ICONDUCTOR TM 4K-Bit Serial CMOS EEPROM FM93C66 4K-Bit Serial CMOS EEPROM MICROWIRE Bus Interface Features The FM93C66 device is 4096 bits of CMOS non-volatile electri­ cally erasable memory organized as 256x16 bit array. They are fabricated using Fairchild Semiconductor's floating-gate CMOS

d 65632

Abstract: 65612 nec L302 CMOS Transmission gate Specifications nec cmos CMOS-5 NEC OPENCAD CMOS Block library 700-207
Contextual Info: CMOS-6/ 6A/6V/6X 1.0-MICRON CMOS GATE ARRAYS NEC NEC Electronics Inc. February 1995 Description Figure 1. Sample CMOS-6/6A/6 V/6X Packages NEC’s CMOS-6 gate array families CMOS-6, CMOS6A, CMOS-6V and CMOS-6X are high performance, sub-micron effective channel length CMOS products

VG264265

Abstract: VG264265B VG264260SJ-50 VG264265BJ CAC10 VG264 DOUT20
Contextual Info: V G 264260BJ 262,144 x 16-Bit CMOS Dynamic RAM Description The device is CMOS Dynamic RAM organized as 262,144-word x 16 bits. It is fabricated with an advanced submicron CMOS technology and advanced CMOS circuit design technologies. It is packaged in JEDEC standard 40-pin plastic SOJ package.

VG264265BJ

Abstract: VG264265BJ-4 VG26V4265CJ
Contextual Info: Preiminary VIS VG26V4265CJ 262,144x16-Bit CMOS Dynamic RAM Description The device is CMOS Dynamic RAM organized as 262,144 words x 16 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and advanced CMOS circuit designtechnologies it is packaged in JEDEC standard 40 - pin plastic SOJ package.

VG264265BJ

Abstract: VG264265 VG264265BJ-4 vg264265bj-35 1G5-0017 VG3617801AT VG3617801AT-10 vg264265b
Contextual Info: VG264265BJ 262,144x16-Bit CMOS Dynamic RAM VIS Description The device is CMOS Dynamic RAM organized as 262,144 - words x 16 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and advanced CMOS circuit design technology. It is packaged in JEDEC standard 40 - pin plastic SOJ package.

hpcl 7721

Abstract: 82c250 Application Note
Contextual Info: 40 ns Propagation Delay, CMOS Optocoupler HCPL-7720 HCPL-7721 HCPL-0720 HCPL-0721 Features Basic building blocks of the HCPL-772X/072X are a CMOS LED driver IC, a high speed LED and a CMOS detector IC. A CMOS logic input signal controls the LED driver IC which supplies current to the LED. The

Contextual Info: abêê . * * - * * » static CMOS _ Family ol ROMs March 1992 Table 2 continued : AMI HIGH DENSITY FAMILY OF ROMS COMMERCIAL TEMPERATURE 0° to 70°C Device Name S63312 S63302 S63414 S63434 Process CMOS CMOS CMOS CMOS CMOS Capacity 2 Meg

S634000

Abstract: S63512 S63256
Contextual Info: Static CMOS Family ol ROMs AIM!•Semiconductors March 1992 Table 1 continued : AMI LOW DENSITY FAMILY OF ROMS S63256 S63512 S631000/S631001 S632000 S634000 Process CMOS CMOS CMOS CMOS CMOS Capacity 256K/128K 512K 1 Meg 2 Meg 4 Meg Organization 32Kx8 64Kx8

Contextual Info: static CMOS _ Family of ROMs March 1992 III AMI LOW DENSITY FAMILY OF ROMS Table 1: S6316 S6333/S63332 S63364 S6364 S63128 Process CMOS CMOS CMOS CMOS CMOS Capacity 16K 32K 64K 64K 128K Organization 2Kx 8 4Kx8 8Kx8 8Kx8 16Kx8 Compatible EPROM

Contextual Info: FOD0708 Single Channel CMOS Optocoupler, FOD0738 Dual Channel CMOS Optocoupler Features • ■ ■ ■ ■ ■ ■ ■ ■ General Description +5V CMOS compatibility 15ns typical pulse width distortion 30ns max. pulse width distortion 40ns max. propagation delay skew

Contextual Info: 37E J> INTERNATIONAL C M O S 40 40707 0000347 7 T-46-19-07 INTERNATIONAL CMOS TECHNOLOGY, INC. PEEL 18CV8-15/PEEL™18CV8-20 CMOS Programmable Electrically Erasable Logic Devic6 Features • Architectural Flexibility Advanced CMOS EEPROM Technology — —

Contextual Info: KM64258C CMOS SRAM 65,536 WORDx4 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 12,15, 20ns Max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS) : 2mA(max.) Operating : KM64258C-12 : 150mA (max.) KM64258C-15: 140mA (max.)

Contextual Info: PRELIMINARY KM681002 CMOS SRAM 131,072 WORD x 8 Bit Highspeed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 17, 20ns Max. • Low Power Dissipation Standby (TTL) : 40mA (Max.) (CMOS): 10mA (Max.) Operating : KM681002J-15:170mA (Max.)

KM641003J

Contextual Info: PRELIMINARY KM641003 CMOS SRAM 262,144 WORD x 4 Bit Highspeed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 17, 20ns Max. • Low Power Dissipation Standby (TTL) : 40mA (Max.) (CMOS): 10mA (Max.) Operating : KM641003J-15: 170mA (Max.)

Contextual Info: FM93C66 4K-Bit Serial CMOS EEPROM MICROWIRE Bus Interface General Description Features The FM93C66 device is 4096 bits of CMOS non-volatile electrically erasable memory organized as 256x16 bit array. They are fabricated using Fairchild Semiconductor's floating-gate CMOS

Contextual Info: CMOS SRAM KM64258C 65,536 WORDx4 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 12,15, 20ns Max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS) : 2mA(max.) Operating : KM64258C-12 : 150mA (max.) KM64258C-15 : 140mA (max.)

MC145043

Abstract: level shifter . CMOS to TTL
Contextual Info: MOTOROLA CMOS SSI LO W -POW ER C O M P L E M E N T A R Y MO S HEX LEVEL SHIFTER FOR TTL to CMOS or CMOS to CMOS TTL or CMOS to CMOS HEX LEVEL SHIFTER The MC145043 is a hex non-inverting level shifter using CMOS technology. The level shifter w ill sh ift a T T L signal to CMOS logic

14504BG

Abstract: MC14504B MC14504BDG MC1450*B
Contextual Info: MC14504B Hex Level Shifter for TTL to CMOS or CMOS to CMOS The MC14504B is a hex non−inverting level shifter using CMOS technology. The level shifter will shift a TTL signal to CMOS logic levels for any CMOS supply voltage between 5 and 15 volts. A control

14504BG

Abstract: 14504B MC14504BCP MC14504 504B 948F MC14504B MC14504BCPG MC14504BD MC14504BDG
Contextual Info: MC14504B Hex Level Shifter for TTL to CMOS or CMOS to CMOS The MC14504B is a hex non−inverting level shifter using CMOS technology. The level shifter will shift a TTL signal to CMOS logic levels for any CMOS supply voltage between 5 and 15 volts. A control

14504B

Abstract: MC14504bcp MC14504B 504B 948F MC14504BD MC14504BDR2 MC14504BDT MC14504BF
Contextual Info: MC14504B Hex Level Shifter for TTL to CMOS or CMOS to CMOS The MC14504B is a hex non–inverting level shifter using CMOS technology. The level shifter will shift a TTL signal to CMOS logic levels for any CMOS supply voltage between 5 and 15 volts. A control