siemens gaas fet
Abstract: TMS 1600 marking S221
Contextual Info: SIEMENS GaAs FET CLY 2 Datasheet * Power amplifier for mobile phones * For frequencies up to 3 GHz * Operating voltage range: 2 to 6 V * P at V0=3V, f=1.8GHz typ. 23.5 dBm * High efficiency better 55 % out ESD: Type CLY 2 Electrostatic discharge sensitive device,
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q62702-l96siemens gaas fettms 1600marking s221 |
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Q62702-L96
Contextual Info: CLY 2 GaAs FET Datasheet 4 * Power amplifier for mobile phones * For frequencies up to 3 GHz * Operating voltage range: 2 to 6 V * POUT at VD=3V, f=1.8GHz typ. 23.5 dBm * High efficiency better 55 % 5 6 3 2 ESD: Type CLY 2 Electrostatic discharge sensitive device,
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gaas fet marking a
Abstract: cly 2 GaAs FET marking code 5 Q62702-L96 SIEMENS MAG 6000 siemens gaas fet
Contextual Info: CLY 2 GaAs FET Datasheet 4 * Power amplifier for mobile phones * For frequencies up to 3 GHz * Operating voltage range: 2 to 6 V * POUT at VD=3V, f=1.8GHz typ. 23.5 dBm
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q62702-l96gaas fet marking acly 2 gaas fetmarking code 5+2siemens mag 6000siemens gaas fet
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CLY10
Abstract: gaas fet marking a CLY 10 04917 07096 FET marking code marking code 5 small signal GaAs FET Q62702-L94 siemens gaas fet
Contextual Info: CLY 10 GaAs FET Datasheet * Power amplifier for mobile phones * For frequencies from 400 MHz to 2.5 GHz * Wide operating voltage range: 2.7 to 6 V * POUT at VD=3V, f=1.8GHz 28.5 dBm typ.
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q62702-l94cly10gaas fet marking acly 10+60491707096fet marking codemarking code 5small signal gaas fetsiemens gaas fet
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siemens 30 090
Abstract: Siemens A 1458 gaas fet marking a Q62702-L99 440 485 hl 1606
Contextual Info: CLY 15 GaAs FET Datasheet * Power amplifier for mobile phones * For frequencies from 400 MHz to 2.5 GHz * Operating voltage range: 2.7 to 6 V * POUT at VD=3V, f=1.8 GHz typ. 31.5 dBm
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q62702-l99siemens 30 090siemens a 1458gaas fet marking a+2440 485hl 1606
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gaas fet marking a
Abstract: siemens gaas fet FET marking code Q62702-L90 cly5 cly 10 pd21
Contextual Info: CLY 5 GaAs FET Datasheet * Power amplifier for mobile phones * For frequencies from 400 MHz to 2.5 GHz * Wide operating voltage range: 2.7 to 6 V * POUT at VD=3V, f=1.8GHz typ. 26.5 dBm
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q62702-l90615msgaas fet marking asiemens gaas fet+4fet marking codecly5cly 10pd21
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Q62702-L94
Contextual Info: CLY 10 GaAs FET Datasheet * Power amplifier for mobile phones * For frequencies from 400 MHz to 2.5 GHz * Wide operating voltage range: 2.7 to 6 V * POUT at VD=3V, f=1.8GHz 28.5 dBm typ.
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q62702-l94 |
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Q62702-L90
Abstract: marking K gaas fet gaas fet marking a gaas fet marking C
Contextual Info: CLY 5 GaAs FET Datasheet * Power amplifier for mobile phones * For frequencies from 400 MHz to 2.5 GHz * Wide operating voltage range: 2.7 to 6 V * POUT at VD=3V, f=1.8GHz typ. 26.5 dBm * High efficiency better 55 % ESD: Electrostatic discharge sensitive device,
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q62702-l90marking k gaas fetgaas fet marking agaas fet marking c |
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cly 10
Abstract: Q62702-L94 CLY 70 GPS05560 SMD MARKING CODE TRANSISTOR 501
Contextual Info: GaAs FET CLY 10 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Wide operating voltage range: 2.7 to 6 V VD = 3 V, f = 1.8 GHz, POUT = 28.5 dBm typ. High efficiency better 55% ESD: Electrostatic discharge sensitive device,
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q62702-l94ot-223p-sot223-4-2gps05560+3cly 10cly 70smd marking code transistor 501
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transistor smd code marking 561
Abstract: sot-223 MARKING CODE 718 smd marking 271 Sot
Contextual Info: GaAs FET CLY 15 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Operating voltage range: 2.7 to 6 V POUT at VD = 3 V, f = 1.8 GHz typ. 31.5 dBm Efficiency better 50% ESD: Electrostatic discharge sensitive device,
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ot-223q62702-l99p-sot223-4-2eht08941+4gps05560transistor smd code marking 561sot-223 marking code 718smd marking 271 sot
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WL431003667
Abstract: TRANSISTOR SMD MARKING CODE 703 TRANSISTOR SMD MARKING CODE 723 smd transistor marking p1 TRANSISTOR SMD MARKING CODE 512
Contextual Info: GaAs FET CLY 10 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Wide operating voltage range: 2.7 to 6 V VD = 3 V, f = 1.8 GHz, POUT = 28.5 dBm typ. High efficiency better 55% ESD: Electrostatic discharge sensitive device,
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ot-223q62702-l94p-sot223-4-2gps05560+5wl431003667transistor smd marking code 703transistor smd marking code 723smd transistor marking p1transistor smd marking code 512
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TRANSISTOR SMD MARKING CODE 703
Abstract: TRANSISTOR SMD MARKING CODE 723 GPS05560 Q62702-L94 smd transistor marking 329 book SMD MARKING CODE TRANSISTOR 501
Contextual Info: GaAs FET CLY 10 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Wide operating voltage range: 2.7 to 6 V VD = 3 V, f = 1.8 GHz, POUT = 28.5 dBm typ. High efficiency better 55% ESD: Electrostatic discharge sensitive device,
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q62702-l94ot-223p-sot223-4-2gps05560+5transistor smd marking code 703transistor smd marking code 723smd transistor marking 329booksmd marking code transistor 501
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transistor smd code marking 561
Abstract: GPS05560 Q62702-L99 s-parameter s11 s12 s21
Contextual Info: GaAs FET CLY 15 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Operating voltage range: 2.7 to 6 V POUT at VD = 3 V, f = 1.8 GHz typ. 31.5 dBm Efficiency better 50% ESD: Electrostatic discharge sensitive device,
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q62702-l99ot-223p-sot223-4-2eht08941+3gps05560transistor smd code marking 561s-parameter s11 s12 s21
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Q62702-L96
Contextual Info: GaAs FET CLY 2 Data Sheet • • • • • Power amplifier for mobile phones For frequencies up to 3 GHz Operating voltage range: 2 to 6 V POUT at VD = 3 V, f = 1.8 GHz typ. 23.5 dBm High efficiency better 55% MW-6 ESD: Electrostatic discharge sensitive device,
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q62702-l96gpw05794 |
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RN-134 RN-134
Contextual Info: GaAs FET CLY 2 Data Sheet • • • • • Power amplifier for mobile phones For frequencies up to 3 GHz Operating voltage range: 2 to 6 V POUT at VD = 3 V, f = 1.8 GHz typ. 23.5 dBm High efficiency better 55% MW-6 ESD: Electrostatic discharge sensitive device,
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transistor smd 661 752
Abstract: GPS05560 Q62702-L90 high power FET transistor s-parameters TRANSISTOR SMD MARKING CODE p1 smd transistor code 621 marking code 933 SMD Transistor SMD transistor marking P
Contextual Info: GaAs FET CLY 5 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Wide operating voltage range: 2.7 to 6 V POUT at VD = 3 V, f = 1.8 GHz typ. 26.5 dBm High efficiency better 55% ESD: Electrostatic discharge sensitive device,
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ot-223q62702-l90p-sot223-4-2eht08956+7gps05560transistor smd 661 752high power fet transistor s-parameterstransistor smd marking code p1smd transistor code 621marking code 933 smd transistorsmd transistor marking p
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transistor smd 661 752
Abstract: CLY 30 marking code 933 SMD Transistor TRANSISTOR SMD MARKING CODE p1 GPS05560 Q62702-L90 CLY 5 809 code Marking SOT-223 marking code s21 SMD Transistor
Contextual Info: GaAs FET CLY 5 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Wide operating voltage range: 2.7 to 6 V POUT at VD = 3 V, f = 1.8 GHz typ. 26.5 dBm High efficiency better 55% ESD: Electrostatic discharge sensitive device,
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ot-223q62702-l90p-sot223-4-2eht08956+8gps05560transistor smd 661 752cly 30marking code 933 smd transistortransistor smd marking code p1cly 5809 code marking sot-223marking code s21 smd transistor
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transistor smd code marking 561
Abstract: smd marking 271 Sot GPS05560 Q62702-L99 GAAS FET AMPLIFIER 3400 Mhz TRANSISTOR SMD MARKING CODE 352 smd transistor 718
Contextual Info: GaAs FET CLY 15 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Operating voltage range: 2.7 to 6 V POUT at VD = 3 V, f = 1.8 GHz typ. 31.5 dBm Efficiency better 50% ESD: Electrostatic discharge sensitive device, observe handling precautions!
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ot-223q62702-l99p-sot223-4-2eht08941+6gps05560transistor smd code marking 561smd marking 271 sotgaas fet amplifier 3400 mhztransistor smd marking code 352smd transistor 718
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t z 1037 519
Contextual Info: Infineon !«£hnc!03iä& GaAs FET CLY 15 Data Sheet • Power amplifier for mobile phones • For frequencies from 400 MHz to 2.5 GHz • Operating voltage range: 2.7 to 6 V • • ^ out Vq = 3 V, / = 1.8 GHz typ. 31.5 dBm Efficiency better 50% ESD: Electrostatic discharge sensitive device,
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q62702-l99p-sot223-4-2cly15t z 1037 519 |
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marking code 933 SMD Transistor
Abstract: transistor smd 661 752 CLY5 high power FET transistor s-parameters
Contextual Info: GaAs FET CLY 5 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Wide operating voltage range: 2.7 to 6 V POUT at VD = 3 V, f = 1.8 GHz typ. 26.5 dBm High efficiency better 55% ESD: Electrostatic discharge sensitive device,
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ot-223q62702-l90p-sot223-4-2eht08956+5gps05560marking code 933 smd transistortransistor smd 661 752cly5high power fet transistor s-parameters
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Contextual Info: In fineon »«ihn cicjiss GaAs FET CLY 2 Data Sheet • Power amplifier for mobile phones • • • • For frequencies up to 3 GHz Operating voltage range: 2 to 6 V POUT at VD= 3 V , / = 1.8 GHz typ. 23.5 dBm High efficiency better 55% ESD: Electrostatic discharge sensitive device,
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q62702-l96eht08944 |
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Contextual Info: Infineon ?achnc!ugies GaAs FET CLY 5 Data Sheet • Power amplifier for mobile phones • For frequencies from 400 MHz to 2.5 GHz • Wide operating voltage range: 2.7 to 6 V • POUJ at VD = 3 V , / = 1.8 GHz typ. 26.5 dBm • High efficiency better 55% ESD: Etectrostatic discharge sensitive device,
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q62702-l90p-sot223-4-2eht08952 |
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siemens gaas fet
Abstract: gaas fet marking J
Contextual Info: SIEMENS CLY 5 GaAs FET D a t a s h e e t * Pow er amplifier for mobile phones * For frequencies from 400 M H z to 2.5 G H z * W ide operating voltage range: 2.7 to 6 V * at V 0=3V, f=1.8GHz typ. 26.5 dBm * High efficiency better 55 % X 2 1 ESD: V P S0S163
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s0s163q62702-l90615msi77ms-+3417pssiemens gaas fetgaas fet marking j
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2520P
Abstract: schottky diode 43t BFY193 5613 CFY 19 CFY 18 micro-x 420
Contextual Info: GaAs Components HiRel Discretes and Microwave Semiconductors 11.4.1 Table 2 HiRel Silicon Diodes General Purpose Silicon Schottky Diodes Tj,max = 150 °C Max. Ratings Component type variant BAS 40-T1 VR IF Characteristics VBR VF Package RF CD Detail Spec. Type Variant
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40-t170-t170b-hphpac140+72520pschottky diode 43tbfy1935613cfy 19cfy 18micro-x 420
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