|
40T1
|
|
Unknown
|
Semiconductor Devices, Diode, and SCR Datasheet Catalog |
Scan |
PDF
|
70.63KB |
1 |
|
40T10
|
|
Unknown
|
Semiconductor Devices, Diode, and SCR Datasheet Catalog |
Scan |
PDF
|
70.63KB |
1 |
|
40T11
|
|
Unknown
|
Semiconductor Devices, Diode, and SCR Datasheet Catalog |
Scan |
PDF
|
70.63KB |
1 |
|
40T12
|
|
Unknown
|
Semiconductor Devices, Diode, and SCR Datasheet Catalog |
Scan |
PDF
|
70.63KB |
1 |
|
40T13
|
|
Unknown
|
Semiconductor Devices, Diode, and SCR Datasheet Catalog |
Scan |
PDF
|
70.63KB |
1 |
|
40T14
|
|
Unknown
|
Semiconductor Devices, Diode, and SCR Datasheet Catalog |
Scan |
PDF
|
70.63KB |
1 |
|
40T15
|
|
Unknown
|
Semiconductor Devices, Diode, and SCR Datasheet Catalog |
Scan |
PDF
|
70.63KB |
1 |
NCEAP40T17AD
|
|
NCEPOWER
|
NCE AP40T17AD is an Automotive N-Channel Super Trench Power MOSFET with 40 V drain-source voltage, 275 A continuous drain current, 1.4 mΩ typical RDS(on) at 10 V VGS, and 175 °C operating temperature, suitable for high-frequency switching and synchronous rectification. |
Original |
PDF
|
|
|
|
NCEAP40T13AGU
|
|
NCEPOWER
|
NCEAP40T13AGU is an N-channel Super Trench power MOSFET with 40V drain-source voltage, 165A continuous drain current, 2.0mΩ typical RDS(ON) at VGS=10V, suitable for automotive applications, DC/DC converters, and high-frequency switching. |
Original |
PDF
|
|
|
|
AK40T11A
|
|
AK Semiconductor
|
N-Channel Super Trench Power MOSFET AKP40T11A with 40V drain-source voltage, 110A continuous drain current, 2.5mΩ typical RDS(on) at VGS=10V, 30.4nC total gate charge, suitable for high-frequency switching and synchronous rectification. |
Original |
PDF
|
|
|
|
NCE40T120VT
|
|
NCEPOWER
|
1200V, 40A Trench FSII Fast IGBT with low VCE(sat), high-speed switching, positive temperature coefficient, and tight parameter distribution in a TO-247 package. |
Original |
PDF
|
|
|
|
AKP40T11A
|
|
AK Semiconductor
|
N-Channel Super Trench Power MOSFET AKP40T11A with 40V drain-source voltage, 110A continuous drain current, 2.5mΩ typical RDS(ON) at VGS=10V, low gate charge, suitable for high-frequency switching and synchronous rectification applications. |
Original |
PDF
|
|
|
|
NCEAP40T11AG
|
|
NCEPOWER
|
NCEAP40T11AG is an Automotive N-Channel Super Trench Power MOSFET with 40V VDS, 150A ID, 2.5mΩ RDS(ON) at VGS=10V, featuring low gate charge and high-frequency switching performance in a PDFN5x6-8L package. |
Original |
PDF
|
|
|
|
NCEAP40T11K
|
|
NCEPOWER
|
NCEAP40T11K is a 40V, 150A N-channel Super Trench power MOSFET with 2.4 mΩ typical RDS(ON) at VGS = 10V, optimized for high-frequency switching and synchronous rectification in automotive and DC/DC converter applications. |
Original |
PDF
|
|
|
|
|
|
AKP40T11K
|
|
AK Semiconductor
|
AKP40T11K N-Channel Super Trench MOSFET with 40V drain-source voltage, 110A continuous drain current, 2.4mΩ typical RDS(on) at VGS=10V, optimized for high-frequency switching and synchronous rectification applications. |
Original |
PDF
|
|
|
|
NCEAP40T14AK
|
|
NCEPOWER
|
NCE AP40T14AK is an automotive-grade N-channel Super Trench Power MOSFET with 40V drain-source voltage, 190A continuous drain current, 1.95mΩ typical RDS(on) at 10V VGS, and low gate charge for high-frequency switching applications. |
Original |
PDF
|
|
|
|
NCEAP40T15GU
|
|
NCEPOWER
|
NCEAP40T15GU is an automotive N-channel Super Trench power MOSFET with 40V drain-source voltage, 240A continuous drain current, and low on-resistance of 1.1mΩ typical at VGS=10V, optimized for high-frequency switching and synchronous rectification. |
Original |
PDF
|
|
|
|
SL40T120FL
|
|
SLKOR
|
Low gate charge, Trench FS Tech, VCE(sat)=1.8V@IC=40A, RoHS, VCES=1200V, VGES=±20V, IC=80A@TC=25°C. |
Original |
PDF
|
|
|
|
NCEAP40T14G
|
|
NCEPOWER
|
NCEAP40T14G is an automotive-grade N-channel Super Trench power MOSFET with 40V drain-source voltage, 210A continuous drain current, and low on-resistance of 1.6mΩ typical at VGS=10V, suitable for high-frequency switching and synchronous rectification applications. |
Original |
PDF
|
|
|
|
AKP40T11
|
|
AK Semiconductor
|
AKP40T11 N-Channel Super Trench Power MOSFET with 40V drain-source voltage, 110A continuous drain current, 2.3mΩ typical RDS(on) at VGS=10V, and 3.3mΩ at VGS=4.5V, optimized for high-frequency switching and synchronous rectification. |
Original |
PDF
|
|
|
NCEAP40T17AD
