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    CLT4160 Search Results

    CLT4160 Datasheets (4)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    CLT4160
    Clairex Electronics 40 V, silicon NPN planar expitaxial phototransistor Scan PDF 76.02KB 2
    CLT4160
    Clairex Electronics Silicon NPN Planar Epitaxial Phototransistors Scan PDF 79.48KB 2
    CLT4160
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 119.37KB 1
    CLT4160
    Unknown Discontinued Transistor Data Book 1975 Scan PDF 191.79KB 2

    CLT4160 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Transistor 3TY

    Abstract: CLED400 CLT4140 CLT4150 CLT4160
    Contextual Info: CLT4140 CLT4150 CLT4160 Silicon NPN Planar Epitaxial Phototransistors GENERAL DESCRIPTION — The CLT4000 series are phototransistors molded in a clear epoxy package. Lead frame construction allows direct soldering into circuit board or socket mounting. All 3 types have guaranteed


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    clt4140clt4150clt4160clt4000+5cled400300jusec214e71170-c/itransistor 3ty PDF

    CLED400

    Abstract: CLT4140 CLT4150 CLT4160 CLT400
    Contextual Info: CLAIREX ELECTRONICS DIV ITE D • 21457^ GQ007LG 5 T - ^ l - <ol CLT4140 CLT4150 CLT4160 Silicon NPN Planar Epitaxial Phototransistors GENERAL DESCRIPTION — The CLT4000 series are phototransistors molded in a clear epoxy package. Lead frame construction allows direct soldering into circuit


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    gq007lgclt4140clt4150clt4160+6clt4000cled40020mw/cm228544k300psecclt400 PDF

    LT414

    Abstract: LT4140 LT416
    Contextual Info: HOE 1> BHT'lTBfi 0001007 H O S E N I FASCO INDS/ SENISYS CLT4140 CLT4150 CLT4160 Silicon NPN Planar Epitaxial Phototransistors 4 'l GENERAL DESCRIPTION — The CLT4000 series are phototransistors molded in a clear epoxy package. Lead frame construction allows direct soldering into circuit


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    clt4140clt4150clt4160clt4000+4cled400lt414lt4140lt416 PDF

    CLED400

    Abstract: CLT4140 CLT4150 CLT4160
    Contextual Info: 4DE D B 3 4 =^ 73 6 0D Q 1 0 D 7 4 OSENI FASCO INDS/ SE NI SY S CLT4140 CLT4150 CLT4160 Silicon NPN Planar Epitaxial Phototransistors G E N E R A L D E SC R IP T IO N — The CLT4000 series are photo tran sisto rs molded in a clear epoxy package. Lead fram e construction allows direct soldering into circuit


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    0dq10q7clt4140clt4150clt4160+4clt4000cled400300hsecclt41 PDF

    CLT4160

    Contextual Info: CLT4140 CLT4150 CLT4160 Silicon NPN Planar Epitaxial Phototransistors GENERAL DESCRIPTION — The CLT4000 series are phototransistors molded in a clear epoxy package. Lead frame construction allows direct soldering into circuit board or socket mounting. All 3 types have guaranteed


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    clt4140clt4150clt4160clt4000+4cled400-25ma300jusecem57t PDF

    TIL78

    Abstract: photo transistor til78 til78 phototransistor FPT100 phototransistor ft06 MRD100 OS13 phototransistor OCP71
    Contextual Info: S Y M B O L S & C O D E S E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE


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    til78photo transistor til78til78 phototransistorfpt100 phototransistor+4ft06mrd100os13phototransistor ocp71 PDF

    TIL78

    Abstract: til78 phototransistor L44A BFX82 K1504 MT101B P1028 phototransistor OCP71 transistor k1502
    Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


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    til78til78 phototransistorl44abfx82+5k1504mt101bp1028phototransistor ocp71transistor k1502 PDF

    TIL78

    Abstract: SA2739 phototransistor OCP71 cm601 JAN2N491 photo transistor til78 til78 phototransistor CM602 FPN100 ft06
    Contextual Info: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C


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    TIL78

    Abstract: photo transistor til78 K1202 phototransistor OCP71 photo TIL78 til78 phototransistor 2n318 2SK19GR 2SK19Y C682A
    Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C


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    TIL78

    Abstract: photo transistor til78 OCP71 sp8309 sp8311 3n57 2N577 TIL-78 photo TIL78 1N4378
    Contextual Info: SYMBOLS & CODES EXPLAINED S YMBOL S & CODES C O M M O N TO MO RE T H A N ONE T E C H N I C A L SECTI ON LINE No. TYPE No. ▼ — New Type + — Revised S p ecificatio ns # N o n-JE D E C ty p e m a n u fa ctu re d outsid e u :s . a . t S w itc h in g ty p e , also lis te d in S e c tio n 12


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    fab-100mcbvcb0-30vpc-125mwlc-10ma+13fab-150mcfab-200mcbvcbo-15vtil78photo transistor til78ocp71sp8309sp83113n572n577til-78photo til781n4378 PDF

    TIL78

    Abstract: photo transistor til 78 photo transistor til78 sk 110 19 20n 2sc640 transistor 2SC286 2SC287 2SC430 400M PMT222
    Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    fab-100mcbvcb0-30vpc-125mwlc-10ma+13fab-150mcfab-200mcbvcbo-15vtil78photo transistor til 78photo transistor til78sk 110 19 20n2sc640 transistor2sc2862sc2872sc430400mpmt222 PDF

    TIL78

    Abstract: photo transistor til78 TIL78 em
    Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan
    til78photo transistor til78til78 em PDF

    TIL78

    Abstract: MRD100 FSP165 BSW11 rt930 2N577 BC198A BFY47 10G1051 D10B1055
    Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    fab-100mcbvcb0-30vpc-125mwlc-10ma+13fab-150mcfab-200mcbvcbo-15vtil78mrd100fsp165bsw11rt9302n577bc198abfy4710g1051d10b1055 PDF

    Contextual Info: 4QE D Hi 3 4 ^ ^ 7 3 S D0Q1Q33 5 E3SENI FASCO INDS/ SENISYS CLED400 Gallium Arsenide Infrared Emitting Diode •*.092 - GENERAL DESCRIPTION — The CLED400 is a high intensity infrared emitting diode molded m a clear epoxy package. It has a molded lends to provide a controlled angular irradiance pattern.


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    d0q1q33cled400clt4140clt4160+1clr4180 PDF

    H0A0872-n55

    Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
    Contextual Info: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1


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    1n57221n57231n57241n5725+161n62641n62651n62662004-90xx2600-70xx2n5777-80h0a0872-n55h0a1405-1h0a0865-l51h0a1405hoa708-1hoa9til78 phototransistormoc70t3ir diode til38h0a1874-12 PDF

    TIL149

    Abstract: HOA708-1 S-180-a55 SPX2862 HS-230-40W HOA708 SLOTTED OPTICAL SWITCH HOA1160 h0a2001 A11W
    Contextual Info: ¿£i^±=<.-=is=a. L FASCO INDS/ Part Number SENISYS Replaced By 40E D 3411736 ^ Part Number Replaces ÜQQ1 3 3 Ô By CLI800 . S-870-T55 C L I8 0 0 A . S-875-T55 C L I8 0 0 M . S-870-N55 C L I8 0 0 M A .S-875-N55


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    gq133cla60c-101-ccla60aa+16c-101-bcla60abc-101-acla65c-102cla65aatil149hoa708-1s-180-a55spx2862hs-230-40whoa708slotted optical switchhoa1160h0a2001a11w PDF

    CLED400

    Abstract: CLR4180 CLT4140 CLT4160 DDD1033 DIODE s04 a
    Contextual Info: MOE D H 34^730 F AS C O INDS/ DD D1 0 3 3 S HISENI SENISYS CLED400 1 Gallium Arsenide Infrared Emitting Diode GENERAL DESCRIPTION — The CLED400 is a high intensity infrared em itting diode molded in a clear epoxy package. It has a molded lends to provide a controlled angular irradiance pattern.


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    ddd1033cled400clt4140clt4160+2clr4180diode s04 a PDF

    MAL100

    Abstract: CLED400 CLR4180 CLT4140 CLT4160
    Contextual Info: 1TE D CLAIREX ELECTRONICS DIV • 2 1 4 a 7 T ï □ Q O a ? f it . 1 1- q i - l l CLED400 Gallium Arsenide Infrared Emitting Diode GENERAL DESCRIPTION — The CLED400 is a high intensity infrared emitting diode molded in a clear epoxy package. It has a molded lends to provide a controlled angular irradiance pattern.


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    cled400clt4140clt4160clr4180+2ips20mamal100 PDF

    Contextual Info: CLED400 Gallium Arsenide Infrared Emitting Diode GENERAL DESCRIPTION — The CLED400 is a high intensity infrared emitting diode molded in a clear epoxy package. It has a molded lends to provide a controlled angular irradiance pattern. The CLED400 is spectrally compatible with Clairex CLT4140,


    OCR Scan
    cled400clt4140clt4160clr4180 PDF

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


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    D1302

    Abstract: TIL78 d1302 transistor TIXS79 D1178 D1185 til78 phototransistor 2n318 D1202 DNX4
    Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE I I MIN. MAX Pc T6TT


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    d1302til78d1302 transistortixs79+6d1178d1185til78 phototransistor2n318d1202dnx4 PDF

    Bvn 10k

    Abstract: CLED400 CLR4180 CLT4140 CLT4160
    Contextual Info: CLED400 Gallium Arsenide Infrared Em itting Diode GENERAL DESCRIPTION — The CLED400 is a high intensity infrared em itting diode molded in a clear epoxy package. It has a molded lends to provide a controlled angular irradiance pattern. The CLED400 is spectrally compatible with Clairex CLT4140,


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    cled400clt4140clt4160clr4180+1bvn 10k PDF

    TIL78

    Abstract: 2SA124 SMT102 2sa123 2sa155 AF101 2N534 MA520 maa 550 TF65
    Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    fab-100mcbvcb0-30vpc-125mwlc-10ma+13fab-150mcfab-200mcbvcbo-15vtil782sa124smt1022sa1232sa155af1012n534ma520maa 550tf65 PDF