CLR022 Search Results

UE 40 F 6470

Abstract: pid u 13t
Contextual Info: OY i Am99C16 4 /Am99CL164 Am99C16 5 /Am99CL165 16,384x4 Static R /W Random-Access Memory PRELIMINARY DISTINCTIVE CHARACTERISTICS F ast a ccess tim e - 3 5 /4 5 /5 5 /7 0 ns maxim um 16K x 4 organization O utput Enable ÜE control to a lleviate bus-contention

7207 irc

Abstract: AM99C641 AM99C641-25 AM99C641-35 AM99CL641 CD3022
Contextual Info: Am99C641 / Am99CL641 £1 65,536 x 1 Static Read/Write Random-Access Memory DISTINCTIVE CHARACTERISTICS H igh-perform ance C M O S circuit design and p rocess High Speed - a ccess tim es a s fa st as 25 ns S ingle 5-V ± 1 0 % pow er-supply operation Low pow e r - 550 m W active

pid u 13t

Contextual Info: AD V MICRO {MEMORY]- 0 e! 0257528 ADV MICRO A m DEj D2S7S2Ö DOESbHM MEMORY 89D 9 9 C 1 6 4 /A m 7 j~ 25634 D r T -4 6 -2 3 -1 0 9 9 C L 1 6 4 A m 9 @ C 1 6 5 /A m 9 9 C L 1 6 5 1 6 ,3 8 4 x 4 Static R /W Randoiïi-Access Memory PRELIMINARY > > 33 D ISTINCTIVE CHARACTERISTICS

PD3024

Abstract: pid u 13t CD3022 alc221 CERAMIC LEADLESS CHIP CARRIER AM99C164-35 alc 266
Contextual Info: O y < s -1 Am99C16 4 / Am99CL16 4 Am99C16 5 / Am99CL16 5 1 6 ,3 8 4 x 4 Static R /W Random-Access Memory PRELIMINARY DISTINCTIVE CHARACTERISTICS Low pow er dissipation - 550 m W operating pow er - 200 fiW d a ta retention 2-V data-retention capability 22-pin 0.300-inch DIP <Am99C164

Contextual Info: ADV MICRO {MEMORY} 'it I Am99C164/Am99C165 1 1 6 ,3 8 4 x 4 S ta tic R /W R A M D2S7S2Û OOEbflMM 1 | D ’ DATA SHEET AMENDMENT Increased Standby Current TTL input levels for all speed grades of the Am99C164 and Am99C165, commercial temperature grade. *

7207 irc

Abstract: AM99C641 AM99C641-25 AM99C641-35 AM99CL641 CD3022
Contextual Info: Am99C641 / Am99CL641 £1 65,536 x 1 Static Read/Write Random-Access Memory > DISTINCTIVE CHARACTERISTICS H igh-perform ance C M O S circuit design and p rocess High Speed - a ccess tim es a s fa st as 25 ns S ingle 5-V ± 1 0 % pow er-supply operation Low pow e r - 550 m W active

pid u 13t

Abstract: AM99C164-35 AM99C164-70 CD3022 99C164 L165 ST
Contextual Info: O y < s -1 Am99C16 4 / Am99CL16 4 Am99C16 5 / Am99CL16 5 1 6 ,3 8 4 x 4 Static R /W Random-Access Memory PRELIM IN ARY D IS T IN C T IV E C H A R A C T E R IS T IC S Low pow er dissipation - 550 m W operating pow er - 200 fiW d a ta retention 2-V data-retention capability

Contextual Info: Am99C641 65,536 x 1 Static Read/W rite Random-Access Memory PRELIMINARY High-performance CMOS circuit High Speed - access times as Single 5-V ±10% power-supply Low power - 715 mW active 110 mW TTL - Standby design fast as operation and •process 2 V data retention for battery back up applications

KS000010

Contextual Info: ADV M C R O {MEtlORYJ f i l S e 025 75 2Ö OÜ2Sfa54 2 | ~ Am99C641 / Am99CL641 65,536x1 Static Read/Write Random-Access Memory 0257528 ADV M IC R O M E M O R Y ) 89D 25654 ü T - Ÿ ê 'Z l - o s > 3 DISTINCTIVE CHARACTERISTICS <o <0 • • • • High-performance CMOS circuit design and process

99C641

Contextual Info: Am99C641/Am99CL641 LÌ 65,536 x 1 Static Read/Write Random-Access Memory DISTINCTIVE CHARACTERISTICS • • • • H igh-perform ance C M O S circuit High Speed - a ccess tim es a s Single 5-V ± 1 0 % pow er-supply Low pow e r - 550 m W active 110 m W T T L - Standby