mos 3021
Abstract: IT715 rs 3021 cj marking 133I tes 3012 22-PIN 32-PIN D-10 test ping vdr
Contextual Info: M IL -M -3Ò5 1 0 /2 9 2 30 SEPTEMBER 1987 MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, CMOS, ACCESS MEMORY S R A M , This sp e c ific a tio n is ments and Agencies 1. 65 ,53 6-BIT STATIC RANDOM MONOLITHIC S I L I C O N a p p r o v e d f o r u s e by a l l D e p a r t
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s10/292536-bitmil-m-38510mil-m-jds10/2t+9mos 3021it715rs 3021 cjmarking 133ites 301222-pin32-pind-10test ping vdr
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7207 irc
Abstract: AM99C641 AM99C641-25 AM99C641-35 AM99CL641 CD3022
Contextual Info: 99C641 / Am99CL641 £1 65,536 x 1 Static Read/Write Random-Access Memory DISTINCTIVE CHARACTERISTICS H igh-perform ance C M O S circuit design and p rocess High Speed - a ccess tim es a s fa st as 25 ns S ingle 5-V ± 1 0 % pow er-supply operation Low pow e r - 550 m W active
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am99c641am99cl64122-pinais-wcp-10m-7/87-0+47207 ircam99c641-25am99c641-35cd3022
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7805CT
Abstract: MOC5010 ip1717 UA741CN op amp TL081P LM3524N LM13080N 7824ct LM7915CK LM7905CK
Contextual Info: Master Designer Version 8.5 Component Library Reference Volume 2 October 1995 All rights reserved. No part of this publication may be reproduced, stored in a retrieval system, or transmitted, in any form or by any means-electronic, mechanical, photocopying, recording, or otherwise-without the prior
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7805ctmoc5010ip1717ua741cn op amp+6tl081plm3524nlm13080n7824ctlm7915cklm7905ck
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HM6287HLJP-35
Abstract: AKM6287P-55 HM6287HLJP-25 98C64 AKM6287CG-45 AKM6287CG-55 AKM6287LP-55 AKM6287LP-70 AKM6287P-45 AKM6287P-70
Contextual Info: - 64 4 K m fi tt fi iältlEIS CC> A 4 TAAC max ns TCAC max (ns) TOE max (ns) CMOS ••/ * TOH sin (ns) > S t a t i c RAM (6 5 5 3 6 x 1 ) TOH max (ns) TWP (ns) TDS min (ns) TDH min (ns) TWD «in (ns) TV'R max (ns.) V D D or V C C (V) 2 2 P I N M It ?" Í# ft
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65536x122pin6287akm6287cg-45akm6287cg-55+14287cg-70hm6287lp-55hm6287lp-70hm6287p-30hm6287p-4shm6287p/cg-55hm6287hljp-35akm6287p-55hm6287hljp-2598c64akm6287lp-55akm6287lp-70akm6287p-45akm6287p-70
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7207 irc
Abstract: AM99C641 AM99C641-25 AM99C641-35 AM99CL641 CD3022
Contextual Info: 99C641 / Am99CL641 £1 65,536 x 1 Static Read/Write Random-Access Memory > DISTINCTIVE CHARACTERISTICS H igh-perform ance C M O S circuit design and p rocess High Speed - a ccess tim es a s fa st as 25 ns S ingle 5-V ± 1 0 % pow er-supply operation Low pow e r - 550 m W active
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am99c641am99cl64122-pinais-wcp-10m-7/87-0+47207 ircam99c641-25am99c641-35cd3022
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KS000010
Contextual Info: ADV M C R O {MEtlORYJ f i l S e 025 75 2Ö OÜ2Sfa54 2 | ~ 99C641 / Am99CL641 65,536x1 Static Read/Write Random-Access Memory 0257528 ADV M IC R O M E M O R Y ) 89D 25654 ü T - Ÿ ê 'Z l - o s > 3 DISTINCTIVE CHARACTERISTICS <o <0 • • • • High-performance CMOS circuit design and process
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2sfa54am99c641am99cl641536x1+622-pinop002570op002580002sb71clr022ks000010
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99C641
Contextual Info: 99C641/Am99CL641 LÌ 65,536 x 1 Static Read/Write Random-Access Memory DISTINCTIVE CHARACTERISTICS • • • • H igh-perform ance C M O S circuit High Speed - a ccess tim es a s Single 5-V ± 1 0 % pow er-supply Low pow e r - 550 m W active 110 m W T T L - Standby
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am99c641/am99cl64122-pinam99c641ais-wcp-10m-7/87-0+199c641
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