AM99CL16 Search Results

UE 40 F 6470

Abstract: pid u 13t
Contextual Info: OY i Am99C16 4 /Am99CL164 Am99C16 5 /Am99CL165 16,384x4 Static R /W Random-Access Memory PRELIMINARY DISTINCTIVE CHARACTERISTICS F ast a ccess tim e - 3 5 /4 5 /5 5 /7 0 ns maxim um 16K x 4 organization O utput Enable ÜE control to a lleviate bus-contention

PD3024

Abstract: pid u 13t CD3022 alc221 CERAMIC LEADLESS CHIP CARRIER AM99C164-35 alc 266
Contextual Info: O y < s -1 Am99C16 4 / Am99CL16 4 Am99C16 5 / Am99CL16 5 1 6 ,3 8 4 x 4 Static R /W Random-Access Memory PRELIMINARY DISTINCTIVE CHARACTERISTICS Low pow er dissipation - 550 m W operating pow er - 200 fiW d a ta retention 2-V data-retention capability 22-pin 0.300-inch DIP <Am99C164

pid u 13t

Abstract: AM99C164-35 AM99C164-70 CD3022 99C164 L165 ST
Contextual Info: O y < s -1 Am99C16 4 / Am99CL16 4 Am99C16 5 / Am99CL16 5 1 6 ,3 8 4 x 4 Static R /W Random-Access Memory PRELIM IN ARY D IS T IN C T IV E C H A R A C T E R IS T IC S Low pow er dissipation - 550 m W operating pow er - 200 fiW d a ta retention 2-V data-retention capability

pid u 13t

Contextual Info: AD V MICRO {MEMORY]- 0 e! 0257528 ADV MICRO A m DEj D2S7S2Ö DOESbHM MEMORY 89D 9 9 C 1 6 4 /A m 7 j~ 25634 D r T -4 6 -2 3 -1 0 9 9 C L 1 6 4 A m 9 @ C 1 6 5 /A m 9 9 C L 1 6 5 1 6 ,3 8 4 x 4 Static R /W Randoiïi-Access Memory PRELIMINARY > > 33 D ISTINCTIVE CHARACTERISTICS

Contextual Info: ADV MICRO {MEMORY} 'it I Am99C164/Am99C165 1 1 6 ,3 8 4 x 4 S ta tic R /W R A M D2S7S2Û OOEbflMM 1 | D ’ DATA SHEET AMENDMENT Increased Standby Current TTL input levels for all speed grades of the Am99C164 and Am99C165, commercial temperature grade. *