CL 100 TRANSISTOR Search Results

IBMN325164CT3

Abstract: IBMN325404CT3 IBMN325804CT3
Contextual Info: . IBMN325164CT3 IBMN325804CT3 IBMN325404CT3 256Mb Synchronous DRAM - Die Revision B Preliminary Features • High Performance: -75H3 -75D3 -75A, -260, -360, -10, Units CL=2 CL=3 CL=3 CL=2 CL=3 CL=3 fCK Clock Frequency 133 133 133 100 100 100 MHz tCK Clock Cycle

IBMN312404CT3

Abstract: IBMN312804CT3
Contextual Info: . IBMN312164CT3 IBMN312804CT3 IBMN312404CT3 128Mb Synchronous DRAM - Die Revision B Preliminary Features • High Performance: -75H3 -75D3 -75A, -260, -360, -10, Units CL=2 CL=3 CL=3 CL=2 CL=3 CL=3 fCK Clock Frequency 133 133 133 100 100 100 MHz tCK Clock Cycle

IBM0312404

Abstract: IBM03124B4 IBM0312804
Contextual Info: . IBM0312164 IBM0312804 IBM0312404 IBM03124B4 128Mb Synchronous DRAM - Die Revision B Advance 0.1 Features • High Performance: -75H3 -75D3 -75A, -260, -360, -10, Units CL=2 CL=3 CL=3 CL=2 CL=3 CL=3 fCK Clock Frequency 133 133 133 100 100 100 MHz tCK Clock Cycle

IBM03254K4

Abstract: IBM0325164 IBM DATE CODE
Contextual Info: . IBM0325164 IBM0325804 IBM0325404 IBM03254K4 256Mb Synchronous DRAM - Die Revision B Advance Rev 0.1 Features • High Performance: -75H3 -75D3 -75A, -260, -360, -10, Units CL=2 CL=3 CL=3 CL=2 CL=3 CL=3 fCK Clock Frequency 133 133 133 100 100 100 MHz tCK Clock Cycle

IBM0364804CT3C-360

Abstract: IBM0364404CT3C-10 IBM0364164CT3C360 IBM0364164 IBMN364804 ibm dram
Contextual Info: . IBM0364804 IBM0364164 IBM0364404 IBM03644B4 64Mb Synchronous DRAM - Die Revision C Features • High Performance: -68 -75A, -260, -360, -10, Units CL=3 CL=3 CL=2 CL=3 CL=3 fCK Clock Frequency 150 133 100 100 100 MHz tCK Clock Cycle 6.67 7.5 10 10 10 ns tAC Clock Access Time1

IBM03254B4CT3A-75A

Contextual Info: . IBM0325404 IBM0325804 IBM0325164 IBM03254B4 256Mb Synchronous DRAM - Die Revision A Features • High Performance: -75A -260, -360, -10, Units CL=3 CL=2 CL=3 CL=3 fCK Clock Frequency 133 100 100 100 MHz tCK Clock Cycle 7.5 10 10 10 ns tAC Clock Access Time1

IBMN364164

Abstract: IBMN364804 IBMN364164CT3C-68 IBMN364404 IBMN364164CT3C-360
Contextual Info: . IBMN364164 IBMN364804 IBMN364404 64Mb Synchronous DRAM - Die Revision C Features • Programmable Wrap: Sequential or Interleave • High Performance: -68 -75A, -260, -360, Units CL=3 CL=3 CL=2 CL=3 fCK Clock Frequency 150 133 100 100 MHz tCK Clock Cycle

IBMN364804

Abstract: IBMN364164 IBMN364164CT3C-68 IBMN364404 IBMN364804CT3C260 IBMN364804CT3C360
Contextual Info: . IBMN364164 IBMN364804 IBMN364404 64Mb Synchronous DRAM - Die Revision C Features • High Performance: -68 -75A, -260, -360, Units CL=3 CL=3 CL=2 CL=3 fCK Clock Frequency 150 133 100 100 MHz tCK Clock Cycle 6.67 7.5 10 10 ns tAC Clock Access Time1 6 —

IBMN364804

Contextual Info: . IBMN364164 IBMN364804 IBMN364404 64Mb Synchronous DRAM - Die Revision C Features • High Performance: -68 -75A, -260, -360, Units CL=3 CL=3 CL=2 CL=3 fCK Clock Frequency 150 133 100 100 MHz tCK Clock Cycle 6.67 7.5 10 10 ns tAC Clock Access Time1 6 —

ibm0312804ct3a-260

Abstract: IBM0312804CT3A360 IBM0312404 IBM03124B4 IBM0312804 IBM0312404CT3A IBM0312804CT3A-75A ibm dram IBM0312804CT3A-360
Contextual Info: . IBM0312804 IBM0312164 IBM0312404 IBM03124B4 128Mb Synchronous DRAM - Die Revision A Features • High Performance: -75A, CL=3 -260, CL=2 fCK Clock Frequency 133 100 100 100 MHz tCK Clock Cycle 7.5 10 10 10 ns Time1 — — — 7 ns tAC Clock Access Time2

QVE00118

Contextual Info: QVE00118 PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCH PACKAGE DIMENSIONS .551 14.00 + D E + CL .236 (6.00) .020 (.50) .197 (5.00) CL CL OPTICAL C.L. .100 (2.50) .394 (10.00) .295 (7.50) (2X) FEATURES SCHEMATIC • No contact switching .197 (5.00) MIN (4X)

OPTICAL INTERRUPTER

Contextual Info: QVE00118 PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCH PACKAGE DIMENSIONS .551 14.00 + D E + CL .236 (6.00) .020 (.50) .197 (5.00) CL CL OPTICAL C.L. .100 (2.50) .394 (10.00) .295 (7.50) (2X) FEATURES SCHEMATIC • No contact switching .197 (5.00) MIN (4X)

NT5SV16M16AT

Abstract: NT5SV32M8AT NT5SV64M4AT
Contextual Info: NT5SV64M4AT NT5SV32M8AT NT5SV16M16AT NT5SV64M4AW NT5SV32M8AW NT5SV16M16AW 256Mb Synchronous DRAM Features • • • • • • • • • • • • • • • High Performance: -7K 3 CL=2 -75B, CL=3 -8B, CL=2 Units fCK Clock Frequency 133 133 100 MHz

nt5sv32m8at-75b

Abstract: NT5SV16M16AT NT5SV32M8AT NT5SV64M4AT DRAMs
Contextual Info: NT5SV64M4AT NT5SV32M8AT NT5SV16M16AT NT5SV64M4AW NT5SV32M8AW NT5SV16M16AW 256Mb Synchronous DRAM Features • • • • • • • • • • • • • • • High Performance: -7K 3 CL=2 -75B, CL=3 -8B, CL=2 Units fCK Clock Frequency 133 133 100 MHz

NT5SV32M4CT-75B

Abstract: NT5SV16M8CT NT5SV32M4CT NT5SV8M16CT
Contextual Info: NT5SV32M4CT NT5SV16M8CT NT5SV8M16CT 128Mb Synchronous DRAM Features • High Performance: -7K 3 CL=2 -75B, CL=3 -8B, CL=2 Units fCK Clock Frequency 133 133 100 MHz tCK Clock Cycle 7.5 7.5 10 ns tAC Clock Access Time1 — — — ns tAC Clock Access Time2 5.4

NT5SV16M8CT

Contextual Info: NT5SV32M4CT NT5SV16M8CT NT5SV8M16CT 128Mb Synchronous DRAM Features • High Performance: -7K 3 CL=2 -75B, CL=3 -8B, CL=2 Units fCK Clock Frequency 133 133 100 MHz tCK Clock Cycle 7.5 7.5 10 ns tAC Clock Access Time1 — — — ns tAC Clock Access Time2 5.4

Contextual Info: NT5SV64M4AT NT5SV32M8AT NT5SV16M16AT 256Mb Synchronous DRAM Features • High Performance: -7K 3 CL=2 -75B, CL=3 -8B, CL=2 Units fCK Clock Frequency 133 133 100 MHz tCK Clock Cycle 7.5 7.5 10 ns tAC Clock Access Time 1 — — — ns tAC Clock Access Time 2

BL460

Abstract: 2001hi NT5SV16M16AT-75B transistor t20 nt5sv32m8at-75b NT5SV16M16AT NT5SV32M8AT NT5SV64M4AT
Contextual Info: NT5SV64M4AT L NT5SV32M8AT(L) NT5SV16M16AT(L) 256Mb Synchronous DRAM Features • • • • • • • • • • • • • High Performance: -7K 3 CL=2 -75B, CL=3 -8B, CL=2 Units fCK Clock Frequency 133 133 100 MHz tCK Clock Cycle 7.5 7.5 10 ns —

transistor cl100

Abstract: cdil CK100 CK100 CL100 CL100 pin configuration CK-100 CL100 transistor npn silicon ck100
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR TRANSISTORS CL 100, A, B CK 100, A, B TO-39 Metal Can Package CL100 And CK 100 Are Medium Power Transistors Suitable For Awide Range

IBM0316809C

Abstract: ibm T22 IBM0316169C cmos dram T20 96 diode
Contextual Info: . IBM0316169C IBM0316409C IBM0316809C 16Mb Synchronous DRAM Features • High Performance: • Multiple Burst Read with Single Write Option -10 CL=3 -12 CL=3 Units • Automatic and Controlled Precharge Command fCK Clock Frequency 100 83 MHz • Data Mask for Read/Write control x4,x8

Contextual Info: IBM0316409C IBM0316809C IBM0316169C 16Mb Synchronous DRAM Features • High Performance: fcK Clock Frequency • Multiple Burst Read with Single W rite Option -10 CL-3 -12 CL-3 Units ! • Automatic and Controlled Precharge Command 100 83 MHz ! • Data Mask for Read/Write control x4,x8

IBM0316169C

Abstract: IBM0316809C ibm t20
Contextual Info: . IBM0316409C IBM0316809C IBM0316169C 16Mb Synchronous DRAM Preliminary Features • High Performance: • Multiple Burst Read with Single Write Option -10 CL=3 -12 CL=3 Units • Automatic and Controlled Precharge Command fCK Clock Frequency 100 83 MHz • Data Mask for Read/Write control x4,x8

IBM vga registers

Abstract: PE-LD 22621 cirrus vga lg crt monitor rgb cable ERE9
Contextual Info: IC*- ' fl* CL-GD6340 Preliminary Data Sheet 'CIRRUS LOGIC FEATURES m 100% IBM VGA compatible at the display level • Supports SimulSCAN — displays on CRT and LCD simultaneously ■ Providesfull-colorVGAon8-or512-colorTFT Thin Film Transistor and other active-matrix or color

IRFD110

Abstract: D82BL2
Contextual Info: PUF IRFD110.111 P82BL2.K2 1.Cl AMPERES 100, 60 VOLTS RPS(ON = 0-6 A FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­