CL 100 TRANSISTOR Search Results

IBM0312404

Abstract: IBM03124B4 IBM0312804
Contextual Info: . IBM0312164 IBM0312804 IBM0312404 IBM03124B4 128Mb Synchronous DRAM - Die Revision B Advance 0.1 Features • High Performance: -75H3 -75D3 -75A, -260, -360, -10, Units CL=2 CL=3 CL=3 CL=2 CL=3 CL=3 fCK Clock Frequency 133 133 133 100 100 100 MHz tCK Clock Cycle

IBM03254K4

Abstract: IBM0325164 IBM DATE CODE
Contextual Info: . IBM0325164 IBM0325804 IBM0325404 IBM03254K4 256Mb Synchronous DRAM - Die Revision B Advance Rev 0.1 Features • High Performance: -75H3 -75D3 -75A, -260, -360, -10, Units CL=2 CL=3 CL=3 CL=2 CL=3 CL=3 fCK Clock Frequency 133 133 133 100 100 100 MHz tCK Clock Cycle

IBMN364164

Abstract: IBMN364804 IBMN364164CT3C-68 IBMN364404 IBMN364164CT3C-360
Contextual Info: . IBMN364164 IBMN364804 IBMN364404 64Mb Synchronous DRAM - Die Revision C Features • Programmable Wrap: Sequential or Interleave • High Performance: -68 -75A, -260, -360, Units CL=3 CL=3 CL=2 CL=3 fCK Clock Frequency 150 133 100 100 MHz tCK Clock Cycle

ibm0312804ct3a-260

Abstract: IBM0312804CT3A360 IBM0312404 IBM03124B4 IBM0312804 IBM0312404CT3A IBM0312804CT3A-75A ibm dram IBM0312804CT3A-360
Contextual Info: . IBM0312804 IBM0312164 IBM0312404 IBM03124B4 128Mb Synchronous DRAM - Die Revision A Features • High Performance: -75A, CL=3 -260, CL=2 fCK Clock Frequency 133 100 100 100 MHz tCK Clock Cycle 7.5 10 10 10 ns Time1 — — — 7 ns tAC Clock Access Time2

QVE00118

Contextual Info: QVE00118 PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCH PACKAGE DIMENSIONS .551 14.00 + D E + CL .236 (6.00) .020 (.50) .197 (5.00) CL CL OPTICAL C.L. .100 (2.50) .394 (10.00) .295 (7.50) (2X) FEATURES SCHEMATIC • No contact switching .197 (5.00) MIN (4X)

OPTICAL INTERRUPTER

Contextual Info: QVE00118 PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCH PACKAGE DIMENSIONS .551 14.00 + D E + CL .236 (6.00) .020 (.50) .197 (5.00) CL CL OPTICAL C.L. .100 (2.50) .394 (10.00) .295 (7.50) (2X) FEATURES SCHEMATIC • No contact switching .197 (5.00) MIN (4X)

NT5SV16M16AT

Abstract: NT5SV32M8AT NT5SV64M4AT
Contextual Info: NT5SV64M4AT NT5SV32M8AT NT5SV16M16AT NT5SV64M4AW NT5SV32M8AW NT5SV16M16AW 256Mb Synchronous DRAM Features • • • • • • • • • • • • • • • High Performance: -7K 3 CL=2 -75B, CL=3 -8B, CL=2 Units fCK Clock Frequency 133 133 100 MHz

NT5SV32M4CT-75B

Abstract: NT5SV16M8CT NT5SV32M4CT NT5SV8M16CT
Contextual Info: NT5SV32M4CT NT5SV16M8CT NT5SV8M16CT 128Mb Synchronous DRAM Features • High Performance: -7K 3 CL=2 -75B, CL=3 -8B, CL=2 Units fCK Clock Frequency 133 133 100 MHz tCK Clock Cycle 7.5 7.5 10 ns tAC Clock Access Time1 — — — ns tAC Clock Access Time2 5.4

NT5SV16M8CT

Contextual Info: NT5SV32M4CT NT5SV16M8CT NT5SV8M16CT 128Mb Synchronous DRAM Features • High Performance: -7K 3 CL=2 -75B, CL=3 -8B, CL=2 Units fCK Clock Frequency 133 133 100 MHz tCK Clock Cycle 7.5 7.5 10 ns tAC Clock Access Time1 — — — ns tAC Clock Access Time2 5.4

Contextual Info: NT5SV64M4AT NT5SV32M8AT NT5SV16M16AT 256Mb Synchronous DRAM Features • High Performance: -7K 3 CL=2 -75B, CL=3 -8B, CL=2 Units fCK Clock Frequency 133 133 100 MHz tCK Clock Cycle 7.5 7.5 10 ns tAC Clock Access Time 1 — — — ns tAC Clock Access Time 2

BL460

Abstract: 2001hi NT5SV16M16AT-75B transistor t20 nt5sv32m8at-75b NT5SV16M16AT NT5SV32M8AT NT5SV64M4AT
Contextual Info: NT5SV64M4AT L NT5SV32M8AT(L) NT5SV16M16AT(L) 256Mb Synchronous DRAM Features • • • • • • • • • • • • • High Performance: -7K 3 CL=2 -75B, CL=3 -8B, CL=2 Units fCK Clock Frequency 133 133 100 MHz tCK Clock Cycle 7.5 7.5 10 ns —

transistor cl100

Abstract: cdil CK100 CK100 CL100 CL100 pin configuration CK-100 CL100 transistor npn silicon ck100
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR TRANSISTORS CL 100, A, B CK 100, A, B TO-39 Metal Can Package CL100 And CK 100 Are Medium Power Transistors Suitable For Awide Range

Contextual Info: IBM0316409C IBM0316809C IBM0316169C 16Mb Synchronous DRAM Features • High Performance: fcK Clock Frequency • Multiple Burst Read with Single W rite Option -10 CL-3 -12 CL-3 Units ! • Automatic and Controlled Precharge Command 100 83 MHz ! • Data Mask for Read/Write control x4,x8

IBM vga registers

Abstract: PE-LD 22621 cirrus vga lg crt monitor rgb cable ERE9
Contextual Info: IC*- ' fl* CL-GD6340 Preliminary Data Sheet 'CIRRUS LOGIC FEATURES m 100% IBM VGA compatible at the display level • Supports SimulSCAN — displays on CRT and LCD simultaneously ■ Providesfull-colorVGAon8-or512-colorTFT Thin Film Transistor and other active-matrix or color

SMW45N10

Contextual Info: SMW45N10 erSiScanix ^LJP incorporated N-Channel Enhancement Mode Transistor TO-247 AD TOP VIEW PRODUCT SUMMARY V BR DSS 100 r DS(ON) •d (Cl) (A) 0.040 45 1 GATE 2 DRAIN 3 SOURCE 1 2 3 ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

IRFP152

Abstract: IRFP153
Contextual Info: [MMiRi-lMS [FUT FIELD EFFECT POWER TRANSISTOR IRFP152,153 33 AMPERES 100, 60 VOLTS RqS ON = 0-08 Cl This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­

FZJ 121

Contextual Info: rz j SGS-1H0MS0N Ä T # « » IL Iffir a « ! S TB 3 N A 80 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE V dss RDS on Id STB3NA80 800 V < 4.5 Cl 3.1 A . . . . . . . . TYPICAL RDS(on) = 3.5 Ü ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED

datasheet of the IC CD4013B

Abstract: of the IC CD4013B CD413B CD4019BMS IOH15 msi 7309
Contextual Info: CD4019BMS CMOS Quad AND/OR Select Gate November 1994 Features Pinout • High Voltage Type 20V Rating CD4019BMS TOP VIEW • Medium Speed Operation tPHL = tPLH = 60ns (typ.) at CL = 50pF, VDD = 10V • Standardized Symmetrical Output Characteristics • 100% Tested for Quiescent Current at 20V

CD4030BMS

Abstract: IOH15
Contextual Info: CD4030BMS CMOS Quad Exclusive-OR Gate December 1992 Features Pinout • High Voltage Type 20V Rating CD4030BMS TOP VIEW • Medium-Speed Operation - tPHL, tPLH = 65ns (typ) at VDD = 10V, CL = 50pF • 100% Tested for Quiescent Current at 20V A 1 14 VDD • Standardized Symmetrical Output Characteristics

Contextual Info: CD4030BMS CMOS Quad Exclusive-OR Gate December 1992 Pinout Features • High Voltage Type 20V Rating CD4030BMS TOP VIEW • Medium-Speed Operation - tPHL, tPLH = 65ns (typ) at VDD = 10V, CL = 50pF • 100% Tested for Quiescent Current at 20V A 1 14 VDD • Standardized Symmetrical Output Characteristics

p6020

Abstract: TIP664 TIP-663 TIP663 TIP-665
Contextual Info: TEXAS IN STR ~b2 -COPTO 8 9 6 1 7 2 6 TEXAS INS TR D l F | fl'iblTHL: □ □ 3 b cl ci0 1 <OPTO 62C 3 6 9 9 0 TIP663, TIP664, TIP665 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS REVISED OCTOBER 198 4 • 150 W at 100 ° C C ase Temperature T-33-29

Contextual Info: S G S - T H O M S O N ¿ 5 ¡m e ra « 7 S T D 3 N 30 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E STD 3N 30 . . • . . . . V dss RDS on Id 300 V < 1 . 4 Cl 3 A TYPICAL RDS(on) = 1.1 f t AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

CD4030BMS

Abstract: IOH15
Contextual Info: CD4030BMS S E M I C O N D U C T O R CMOS Quad Exclusive-OR Gate December 1992 Features Pinout • High Voltage Type 20V Rating CD4030BMS TOP VIEW • Medium-Speed Operation - tPHL, tPLH = 65ns (typ) at VDD = 10V, CL = 50pF • 100% Tested for Quiescent Current at 20V

N mosfet 100v 500A

Contextual Info: DE~1 cl B 4 7 citi3 OOIQSBM 1 UNITRODE. CORP 9347963 U N I T R O D E CORP 920 POWER MOSFET TRANSISTORS 100 Volt, 0.6 Ohm N-Ghannel 1Û5 2 4 D7"-J^-o7 JTX jtkvI K FEATURES DESCRIPTION • • • • • Th e Unltrode power M O SFET design u tilize s the m ost advanced technology available.