CL 100 TRANSISTOR Search Results

IBMN364164

Abstract: IBMN364804 IBMN364164CT3C-68 IBMN364404 IBMN364164CT3C-360
Contextual Info: . IBMN364164 IBMN364804 IBMN364404 64Mb Synchronous DRAM - Die Revision C Features • Programmable Wrap: Sequential or Interleave • High Performance: -68 -75A, -260, -360, Units CL=3 CL=3 CL=2 CL=3 fCK Clock Frequency 150 133 100 100 MHz tCK Clock Cycle

QVE00118

Contextual Info: QVE00118 PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCH PACKAGE DIMENSIONS .551 14.00 + D E + CL .236 (6.00) .020 (.50) .197 (5.00) CL CL OPTICAL C.L. .100 (2.50) .394 (10.00) .295 (7.50) (2X) FEATURES SCHEMATIC • No contact switching .197 (5.00) MIN (4X)

OPTICAL INTERRUPTER

Contextual Info: QVE00118 PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCH PACKAGE DIMENSIONS .551 14.00 + D E + CL .236 (6.00) .020 (.50) .197 (5.00) CL CL OPTICAL C.L. .100 (2.50) .394 (10.00) .295 (7.50) (2X) FEATURES SCHEMATIC • No contact switching .197 (5.00) MIN (4X)

NT5SV32M4CT-75B

Abstract: NT5SV16M8CT NT5SV32M4CT NT5SV8M16CT
Contextual Info: NT5SV32M4CT NT5SV16M8CT NT5SV8M16CT 128Mb Synchronous DRAM Features • High Performance: -7K 3 CL=2 -75B, CL=3 -8B, CL=2 Units fCK Clock Frequency 133 133 100 MHz tCK Clock Cycle 7.5 7.5 10 ns tAC Clock Access Time1 — — — ns tAC Clock Access Time2 5.4

BL460

Abstract: 2001hi NT5SV16M16AT-75B transistor t20 nt5sv32m8at-75b NT5SV16M16AT NT5SV32M8AT NT5SV64M4AT
Contextual Info: NT5SV64M4AT L NT5SV32M8AT(L) NT5SV16M16AT(L) 256Mb Synchronous DRAM Features • • • • • • • • • • • • • High Performance: -7K 3 CL=2 -75B, CL=3 -8B, CL=2 Units fCK Clock Frequency 133 133 100 MHz tCK Clock Cycle 7.5 7.5 10 ns —

transistor cl100

Abstract: cdil CK100 CK100 CL100 CL100 pin configuration CK-100 CL100 transistor npn silicon ck100
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR TRANSISTORS CL 100, A, B CK 100, A, B TO-39 Metal Can Package CL100 And CK 100 Are Medium Power Transistors Suitable For Awide Range

Contextual Info: IBM0316409C IBM0316809C IBM0316169C 16Mb Synchronous DRAM Features • High Performance: fcK Clock Frequency • Multiple Burst Read with Single W rite Option -10 CL-3 -12 CL-3 Units ! • Automatic and Controlled Precharge Command 100 83 MHz ! • Data Mask for Read/Write control x4,x8

IBM vga registers

Abstract: PE-LD 22621 cirrus vga lg crt monitor rgb cable ERE9
Contextual Info: IC*- ' fl* CL-GD6340 Preliminary Data Sheet 'CIRRUS LOGIC FEATURES m 100% IBM VGA compatible at the display level • Supports SimulSCAN — displays on CRT and LCD simultaneously ■ Providesfull-colorVGAon8-or512-colorTFT Thin Film Transistor and other active-matrix or color

IRFD110

Abstract: D82BL2
Contextual Info: PUF IRFD110.111 P82BL2.K2 1.Cl AMPERES 100, 60 VOLTS RPS(ON = 0-6 A FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­

SMW45N10

Contextual Info: SMW45N10 erSiScanix ^LJP incorporated N-Channel Enhancement Mode Transistor TO-247 AD TOP VIEW PRODUCT SUMMARY V BR DSS 100 r DS(ON) •d (Cl) (A) 0.040 45 1 GATE 2 DRAIN 3 SOURCE 1 2 3 ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

IRFP152

Abstract: IRFP153
Contextual Info: [MMiRi-lMS [FUT FIELD EFFECT POWER TRANSISTOR IRFP152,153 33 AMPERES 100, 60 VOLTS RqS ON = 0-08 Cl This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­

FZJ 121

Contextual Info: rz j SGS-1H0MS0N Ä T # « » IL Iffir a « ! S TB 3 N A 80 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE V dss RDS on Id STB3NA80 800 V < 4.5 Cl 3.1 A . . . . . . . . TYPICAL RDS(on) = 3.5 Ü ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED

datasheet of the IC CD4013B

Abstract: of the IC CD4013B CD413B CD4019BMS IOH15 msi 7309
Contextual Info: CD4019BMS CMOS Quad AND/OR Select Gate November 1994 Features Pinout • High Voltage Type 20V Rating CD4019BMS TOP VIEW • Medium Speed Operation tPHL = tPLH = 60ns (typ.) at CL = 50pF, VDD = 10V • Standardized Symmetrical Output Characteristics • 100% Tested for Quiescent Current at 20V

CD4030BMS

Abstract: IOH15
Contextual Info: CD4030BMS CMOS Quad Exclusive-OR Gate December 1992 Features Pinout • High Voltage Type 20V Rating CD4030BMS TOP VIEW • Medium-Speed Operation - tPHL, tPLH = 65ns (typ) at VDD = 10V, CL = 50pF • 100% Tested for Quiescent Current at 20V A 1 14 VDD • Standardized Symmetrical Output Characteristics

Contextual Info: S G S - T H O M S O N ¿ 5 ¡m e ra « 7 S T D 3 N 30 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E STD 3N 30 . . • . . . . V dss RDS on Id 300 V < 1 . 4 Cl 3 A TYPICAL RDS(on) = 1.1 f t AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

CD4030BMS

Abstract: IOH15
Contextual Info: CD4030BMS S E M I C O N D U C T O R CMOS Quad Exclusive-OR Gate December 1992 Features Pinout • High Voltage Type 20V Rating CD4030BMS TOP VIEW • Medium-Speed Operation - tPHL, tPLH = 65ns (typ) at VDD = 10V, CL = 50pF • 100% Tested for Quiescent Current at 20V

N mosfet 100v 500A

Contextual Info: DE~1 cl B 4 7 citi3 OOIQSBM 1 UNITRODE. CORP 9347963 U N I T R O D E CORP 920 POWER MOSFET TRANSISTORS 100 Volt, 0.6 Ohm N-Ghannel 1Û5 2 4 D7"-J^-o7 JTX jtkvI K FEATURES DESCRIPTION • • • • • Th e Unltrode power M O SFET design u tilize s the m ost advanced technology available.

IRF140

Abstract: IRF142 IRF141 IRF143 IFIF141
Contextual Info: Standard Power MOSFETs- IRF140, IRF141, IRF142, IRF143 File N u m b e r Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors 24 A and 27 A, 60 V - 100 V rDsiom = 0.085 O and 0.11 Cl N -C H A N N E L E N H A N C E M E N T M O D E

LA 7814

Abstract: IC 7812 TV 7814 transistor
Contextual Info: ffJ HARRIS S E M I C O N D U C T O R CD4030BMS CMOS Quad Exclusive-OR Gate December 1992 Pinout Features • CD4030BMS TOP VIEW High Voltage Type 20V Rating • Medlum-Speed Operation - tPHL, tPLH = 65ns (typ) at VDD > 10V, CL - 50pF *E B[7 • 100% Tested (or Quiescent Current at 20V

2N698

Abstract: cd 4011 be 2n657 to39 2N1990
Contextual Info: JEDEC TRANSISTORS continued @ > 'S u u > u <J > a LLl 1< _E c Ë Ul u_ _c 60 100 (40) (40) 30/90 30/90 20/60 40/120 200 200 150 150 60 20/60 40/120 40/120 40/120 40/120 150 150 150 150 150 150 150 150 10 30 X CD u. > < j= _o CL X eg E </> UJ o > X CO S o

transistor c128

Abstract: 55FT
Contextual Info: C1-28/C1-28Z _ 1Watts "28 Volts’ Class C GHz TECHNOLOGY DsfCO Ill 400 IV lH Z »f-M IC »O W A V e SILICO N >OWE> « A H S IS T O H Î GENERAL DESCRIPTION CASE OUTLINE The Cl-28 / Z is a COMMON EMITTER transistor capable of providingl Watts of Class AB or C, RF output power in the band 100 - 400 MHz. This

XC6233

Contextual Info: XC6233 Series ETR03066-004 200mA High Speed LDO Voltage Regulator with Inrush Current Prevention •GENERAL DESCRIPTION The XC6233 series is a 200mA high speed LDO regulator that features high accurate high ripple rejection and low dropout. The series consists of a voltage reference, an error amplifier, a driver transistor, a current limiter, a phase compensation circuit and an

all ic data

Abstract: IC data book free download data sheet capacitor 22uF F-103 Z capacitor TK717xx TOKO ldo peak hold ic data sheet GRM36B104K10
Contextual Info: IC DATA SHEET LDO REGULATOR WITH ON/OFF SWITCH TK717xx MEETING YOUR NEEDS TOKO TOKO Inc. IC Data Sheet TK717xx TK717xx Features ・Built-in shunt circuit of output to GND. Charged energy of output capacitor is discharged quickly. ・Built-in PNP power transistor. Very small Dropout Voltage

XC6222B

Abstract: XC6222c XC6222D301 XC6222B301 xc6222A xc6222 6ce sot XC6222D XC6222A301 DIODE MARKING 9X
Contextual Info: XC6222 Series ETR0344-005 700mA High Speed LDO Regulator with Reverse Current Protection •GENERAL DESCRIPTION The XC6222 series is a highly accurate, low noise, high ripple rejection, low dropout, and low power consumption high speed CMOS voltage regulator. The series consists of a voltage reference, an error amplifier, a driver transistor, a current limiter, a