CL 100 HIE Search Results

Contextual Info: . . . m G ^ B O B flD M A IR V in te l ¡PLD22V10 FAST 10-MACROCELL CMOS PLD High-Speed Upgrade to Bipolar 22V10 and CMOS Equivalents • tpo 10 ns, 71.4 MHz with Feedback, 100 MHz with No Feedback ■ Typical Ice = 90 mA @15 MHz ■ 1-Micron CHMOS HIE EPROM

diode 5.1B3

Abstract: 74LVT16245DL sq 1b4 1 74LVT 74LVT16245 74LVT16245DGG LVT16245 51B3 Varo Semiconductor diode
Contextual Info: PHILIPS INTERNATIONAL bSE D • 711C A2b Q D b W a Philips Semiconductor* Low Voltage Products 3.3V ABT 16-b it transceiver with 3-state outputs 74LVT16245 This device is an 16-bit transceiver featuring non-inverting 3-State bus compatible outputs in both send and receive directions. Hie

U206

Contextual Info: HD74BC645A Octal Bus Transceivers With 3 State Outputs The HD74BC645A provides high drivability and operation equal to or better than high speed bipolar standard logic IC by using Bi-CMOS process, Hie device features low power dissipation that is about 1/5 of high speed bipolar logic IC. When

Contextual Info: in te i MILITARY ÍPLD22V10 FAST 10-MACROCELL CMOS PLD High-Speed Upgrade to Bipolar 22V10 and CMOS Equivalents 1-Micron CHMOS HIE EPROM Technology, UV-Erasable programmable “Security Bit” Allows Total Protection of Proprietary Designs 100% Generically Tested Logic Array

APT1001R1AN

Abstract: APT1001R3AN
Contextual Info: AT>VANCFT> POUFR TECHNOLOGY 0 2 5 7 1 0 1 O O O O M I b 424 M A V P HIE î ADVANCED P o w er Te c h n o l o g y APT1001R1AN 1000V 9.5A 1.10 £i APT901R1 AN 900V 9.5A 1.10 Q. APT1001R3AN 1000V 8.5A 1.30 £2 POWER MOS IV APT901R3AN 900V 8.5A 1.30 n N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

PLD22V10

Abstract: NPLD22V10
Contextual Info: intei . ¡PLD22V10-10, -15, -25 HIGH PERFORMANCE 10-MACROCELL CMOS PLD High-Speed Upgrade to Bipolar 22V10 and CMOS Equivalents • tpo 10 ns, 95.2 MHz with Feedback, 100 MHz with No Feedback ■ 1-Micron CHMOS HIE EPROM Technology ■ Typical Iqc = 90 mA @ 15 MHz

Contextual Info: W h p \ HEW LETT V J tiM P A C K A R D High CMR, High Speed TTL Compatible Optocoupler Technical Data 6N137 HCPL-2601 HCPL-2611 D escription • In tern al S hield for H igh C om m on M ode R ejection CMR HCPL-2601: 1000 V/ns at Vc„ = 5 0 V HCPL-2611: 5000 V/ns at

Contextual Info: SONY CORP/COMPONENT PRODS HIE T> 0302303 SONY. 0002103 6 »SONY SLD151U/V 7~~ y / - o y Visible Laser Diode Description SLD151U/V are AIGalnP visible laser diodes designed for optical disc, bar code reader and laser printer applications. Features • Visible radiation A.=670nm .

BLX92A

Abstract: BLX92 em 179 sfe 5,5 ma IEC134 transistor IR 944
Contextual Info: PHILIPS INTERNATIONAL HIE D E3 TllOfiEb 0027Ö37 G E3P HI N BLX92A M A IN T E N A N C E T Y P E U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B o r C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe

HIGH VOLTAGE DIODE 6kv

Abstract: ESJA58-06A DIODE 6kv
Contextual Info: DATE NAME CHECKED _ —" t DWG.NO. m a la ria l and Hie Inform ation herein Is Ihe prop erty ol TuJI Electric Co.,Lid. They shall be neither re p ro d u c e d , co p ie d , lent, or d isclo se d In any way w h a ts o e v e r lor the mo ot a n y third party nor used for the m u n tiln ch irin g p u rp o se s w ith o u t

HIGH VOLTAGE DIODE 6kv

Abstract: ESJA58-06A 5c 6kv DIODE 6kv 10ma 6kv diode IRz 24 N
Contextual Info: DATE NAME CHECKED _ —" t DWG.NO. m a la ria l and Hie Inform ation herein Is Ihe prop erty ol TuJI Electric Co.,Lid. They shall be neither re p ro d u c e d , co p ie d , lent, or d isclo se d In any way w h a ts o e v e r lor the mo ot a n y third party nor used for the m u n tiln ch irin g p u rp o se s w ith o u t

SCANPSC110F

Abstract: SCANPSC110FDMQB SCANPSC110FFMQB SCANPSC110FLMQB SCANPSC110FSC SCANPSC110FSCX
Contextual Info: General Description Features The SCANPSC110F Bridge extends the IEEE Std. 1149.1 test bus into a multidrop test bus environment. The advantage of a hierarchical approach over a single serial scan chain is improved test throughput and the ability to remove a

OC-106 94V0 C

Abstract: SR502 SR503 SR504 SR505 SR506
Contextual Info: HIED _SR502 - SR506 IIW IU HIGH CURRENT SCHOTTKY BARRIER RECTIFIER INCORPORATED Features • • • • • Plastic package has U n d e rw rite rs Lab fla m m a b ility C lassificatio n 94V-0 H igh c u rre n t c a p a b ility and lo w fo rw a rd d ro p

2sk2975

Abstract: 157-299 01 139706 transistor 16870 72477 17053 cetie
Contextual Info: MITSUBISHI RF POWER MOS FET 2SK2975 SILICON MOS FET TYPE DESCRIPTION 2SK2975 «S a MOS FET typ« transistor spcofically designed tor VHFrtJHF power air«>Hie<Siipp<»caUO<£ FEATU R ES • High power >*n:Gpcoa.4<Jß Ö Voo-9.6V .<-450M H / Rrv-30dBm • H Q fi e m c n !rc y :W % typ

Contextual Info: HARRIS SEMICOND SECTOR 37E D • 4302271 D0 2 1 4 Sb T * H A S 3875081 G E SOLID STATE 01E 13642 D • T-5Z-M-00 CD4049A, CD4050A Types CMOS Hex Buffer/Converters CD4049A—Inverting Type CD4050A—Non-Inverting Type Hie CD4049A and CD4050A are inverting and non-inverting hex buffers, respectively,

64 CERAMIC LEADLESS CHIP CARRIER LCC

Abstract: C1996 SCANPSC110F SCANPSC110FDMQB SCANPSC110FFMQB SCANPSC110FLMQB SCANPSC110FSC SCANPSC110FSCX
Contextual Info: SCANPSC110F SCAN Bridge Hierarchical and Multidrop Addressable JTAG Port IEEE1149 1 System Test Support General Description Features The SCANPSC110F Bridge extends the IEEE Std 1149 1 test bus into a multidrop test bus environment The advantage of a hierarchical approach over a single serial scan

AE 1600-S

Contextual Info: 2SK2165-01 FUJI P O W E R M O S - F E T N-CHANNEL SILICON POWER MOS-FET F A P -IIIA S E R IE S • Features ■ Outline Drawings • Hie|h current • Low on-resistance • No secondary breakdown • Low driving power • Hitjh forward Transconductance • Avulanche-proof

Contextual Info: HIE D TAIWAN LITON ELECTRONIC U T E H iH • flflBSb'iS D0QM23H 110 » T L I T KBPC3005 thru 310 SEMICONDUCTORS 'V ' i 'h - v s VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Ampere« PBPC-3 .445 111.3 FEATURES • • Rating to 1000V PRV Surge overload rating to 45 Amperes peak

x2210a

Contextual Info: 256 Bit Commercial X2210A Hier 64 x 4 Bit Nonvolatile Static RAM FEATURES • Single 5V Supply • Fully TTL Compatible • JEDEC Standard 18-Pin Package • Infinite E2PROM Array Recall, RAM Read and Write Cycles • Access Time of 250 ns Max. • Nonvolatile Store Inhibit: Vcc = 3V Typical

Contextual Info: NJM2745 QUAD OPERATIONAL AMPLIFIER GENERAL DESCRIPTION NJM2745 is quad operational amplifier with low voltage noise 5nV/ Hz @f=1kHz with high bandwidth and low distortion. These features may be used in audio signal processing by high-level audio usages such as hi-end car audio,

Contextual Info: NJM2745 QUAD OPERATIONAL AMPLIFIER • GENERAL DESCRIPTION NJM2745 is quad operational amplifier with low voltage noise 5nV/√Hz @f=1kHz with high bandwidth and low distortion. These features may be used in audio signal processing by high-level audio usages such as hi-end car audio,

DMP14

Abstract: EMP14 NJM2745 NJM2745D NJM2745E NJM2745M NJM2745V SSOP14
Contextual Info: NJM2745 QUAD OPERATIONAL AMPLIFIER • GENERAL DESCRIPTION NJM2745 is quad operational amplifier with low voltage noise 5nV/√Hz @f=1kHz with high bandwidth and low distortion. These features may be used in audio signal processing by high-level audio usages such as hi-end car audio,

Contextual Info: NJM2745 QUAD OPERATIONAL AMPLIFIER • GENERAL DESCRIPTION NJM2745 is quad operational amplifier with low voltage noise 5nV/√Hz @f=1kHz with high bandwidth and low distortion. These features may be used in audio signal processing by high-level audio usages such as hi-end car audio,

DMP14

Contextual Info: NJM2745 QUAD OPERATIONAL AMPLIFIER • GENERAL DESCRIPTION NJM2745 is quad operational amplifier with low voltage noise 5nV/√Hz @f=1kHz with high bandwidth and low distortion. These features may be used in audio signal processing by high-level audio usages such as hi-end car audio,