CK 77-1 3 Search Results

20D17

Abstract: 21d8
Contextual Info: TEXAS INSTR Ô9l>1725 T E X AS -CASIC/MEilORYD- I NSTR 77 D E| 0 ^ 1 7 5 5 <ASIC/MEMORY ADVANCE INFORMATION 262,144 DOMOöbl ^7C 4 0 86 1 D TM4256GP8, TM4256GV8 BY 8-BIT DYNAMIC RAM MODULES OCTOBER 1986 — REVISED NOVEMBER 1985 262,144 X 8 Organization V SINGLE-IN-LINE P A CK AG E*

compressor Sanyo

Abstract: compressor limiter ic tape head preamp circuit 7007S sanyo compressor luminance sensor 7005S
Contextual Info: SANYO SEMICONDUCTOR CÔRP 7b DËT| 7^101^ ODOlâTa □ |~ t 7997076 S ANYO SEMICONDUCTOR L A 7 0 0 5 ,7 0 0 5 S - CORP 76C 01872 D C IR C U IT D R A W IN G N o ,2 1 1 3 monolithic linear IC VTR LUMINANCE SIGNAL PLA YBA CK PRO CESSO R T‘ 77‘0 7~/3 3012A LÂ7005

br1941

Abstract: wd1943 BR194 COM5036 com8116
Contextual Info: NESTERN DIGITAL CORP 77 W E S T E C O R DE I c] 7 1 f l a 5 a 0 0 G 4 5 1 4 S É T P w m j i u i i M % r-JT0-23 l O N WD1943 8136 Dual Baud Rate C lo ck X TA L/EXT 1 + 5V • 16 SELECTABLE BAUD RATE CLOCK FREQUENCIES •OPERATES WITH CRYSTAL OSCILLATOR OR EX­

DSC 100-13

Abstract: S0244
Contextual Info: I N T E GR AT ED DEVICE SflE D 4Ö25 77 1 CMOS STATIC RAMS 16K 4Kx 4-BIT Separate Data Inputs and Outputs □0 11 5b 4 4TT IDT71681SA/LA IDT71682SA/LA T -m ,-z i - o g FEATURES: DESCRIPTION: • S eparate data inputs and outputs • ID T71681S A/LA: outputs tra ck inputs during w rite m ode

Contextual Info: DO N O T S C A L E □ DATE UT AU TH O RITY •» SIO N . OP AUTH REVISION RECORD SYM. DR. CK. 2-23-77 - R E L E R S E O TH R U REV. "F “ 1¿4005 % d f //û 93Z * s / h Z W E 86 — • P iC TU R E R E V IS E D 18SE02 F2 ADDED DELPHI LOGO & NOTES:1

F-ZTAT

Contextual Info: PD11/D11/AUDATA3*4 PD10/D10/AUDATA2*4 PD9/D9/AUDATA1*4 PD8/D8/AUDATA0*4 Vss PD7/D7 PD6/D6 PD5/D5 Vcc PD4/D4 PD3/D3 PD2/D2 PD1/D1 PD0/D0 Vss XTAL MD3 EXTAL MD2 Vcc FWP*1 NMI MD1 MD0 PLLVcc PLLCAP PLLVss PA15/CK Pin Arrangement RES 1.3 84 83 82 81 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57

Hitachi DSAUTAZ006

Abstract: 4PD15 SH7145 write read flash memory SH7144 SH7145
Contextual Info: PD11/D11/AUDATA3*4 PD10/D10/AUDATA2*4 PD9/D9/AUDATA1*4 PD8/D8/AUDATA0*4 Vss PD7/D7 PD6/D6 PD5/D5 Vcc PD4/D4 PD3/D3 PD2/D2 PD1/D1 PD0/D0 Vss XTAL MD3 EXTAL MD2 Vcc FWP*1 NMI MD1 MD0 PLLVcc PLLCAP PLLVss Pin Arrangement PA15/CK 1.3 84 83 82 81 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57

MAX177

Abstract: MAX177CNG MAX177CWG MAX177ENG MAX177EWG MAX177MRG D1904
Contextual Info: y n y j x i y n C M O S 1 0 -B it A / D C o n v e rte r w ith T rack-an d -H o td _ Features T h e M A X1 77 is a c o m p lete C M O S sa m p lin g 10-bit a n a lo g -to -d ig ita l converter A D C that co m b in e s an o n -c h ip tra ck -a n d -h o ld and voltage reference along

n057 B

Abstract: ALP 003 MH8S72DBFD-7 MH8S72DBFD-8 ao9 no3
Contextual Info: P relim inary Spec. MITSUBISHI LSls Some contents are subject to change w ith o u t notice. MH8S72DBFD-7.-8 6 0 3 ,9 7 9 ,77 6-B IT 8,388,608-W Q R D BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH8S72DBFD is 8388608 - word x 72-bit S ynchronous DRAM module. This consist of

MB89394

Contextual Info: MB89394-PF 1/3 IL00 * C-MOS ENCAPSULATED PERIPHERAL PROCESSOR VDD (+5V) 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 GND VDD (+5V) NC 64 63 62 61 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 —TOP VIEW— 40 39 38 37 36 35 34 33

mpc 1723

Abstract: stk ic 5.1 circuit diagram 74AS890 mpc+1723
Contextual Info: TEXAS INSTR -CL0GIC3- 77 DE 0^1723 003^30 û T 'S Z - 't t - O S SN54AS890, SN74AS890 MICROSEQUENCERS D 2 6 6 2 , NOVEM BER 1 9 8 2 -R E V IS E D A PRIL 1986 14 Bits Wide—Addresses up to 16,384 Words of Microcode with One Chip SN 74AS890 . . . GB PACKAGE

lk 0351

Contextual Info: P relim inary Spec. MITSUBISHI LSls Some contents are subject to change w ith o u t notice. MH8S72DBFD-7.-8 6 0 3 ,9 7 9 ,77 6-B IT 8,388,608-W Q R D BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH8S72DBFD is 8388608 - word x 72-bit S ynchronous DRAM module. This consist of

Contextual Info: Contents Panels & Adaptors Page 82 Ventilated Panels Page 84 Doors & Chassis - Panel Mount Page 86 Shelves & Slides Page 87 Keyboard Shelves Page 92 Drawers Page 93 80 Hammond Manufacturing Co. Ltd. 394 Edinburgh Rd. North Guelph, Ontario N1H 1E5 CANADA

Contextual Info: CONDENSATEURS CERAMIQUE MOULES CLASSE 1 MOLDED CERAMIC CAPACITORS CLASS 1 SOMMAIRE SUMMARY Généralités sur les condensateurs céramique moulés classe 1 Feuilles particulières sur les condensateurs céramique moulés et fluidisés classe 1 p. 30 p. 38

mlt 22

Abstract: star delta starter single line drawing LQFP144 "7 segment display" 3102 STR712FR2H6 ISO7816-3 LFBGA144 LFBGA64 LQFP64 STR710
Contextual Info: STR71xF ARM7TDMI 32-bit MCU with Flash, USB, CAN 5 timers, ADC, 10 communications interfaces Features • ■ ■ ■ Core – ARM7TDMI 32-bit RISC CPU – 59 MIPS @ 66 MHz from SRAM – 45 MIPS @ 50 MHz from Flash LQFP64 10 x 10 Memories – Up to 256 Kbytes Flash program memory

Contextual Info: HD6437021C02X 1/4 IL08D C-MOS 32-BIT MICROPROCESSOR GND VDD GND GND VDD GND GND VDD VDD GND GND GND VDD GND GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100

Contextual Info: CXD8056Q 1/4 IL00 * C-MOS NAM CROSS POINT GND VDD (+5 V) GND VDD (+5 V) GND 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 GND 64 63

Contextual Info: CXD8160Q 1/2 IL08D C-MOS CHROMA LINE CRAWL CANCELLER AND DIGITAL CLAMPER GND GND 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 VDD VDD GND GND GND CXD8160 : NC CXD8935 : GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 65 66 67 68 69

Contextual Info: HB526C264EN-10IN, HB526C464EN-10IN 1,048,576-word x 64-bit x 2-bank Synchronous Dynamic RAM Module HITACHI ADE-203-737C Z Rev. 3.0 May. 15,1997 Description The HB526C264EN, HB526C464EN belong to 8-byte DIMM (Dual In-line Memory Module) family, and have been developed as an optimized main memory solution for 8-byte processor applications. The

Contextual Info: 512Mb: x4, x8, x16 DDR SDRAM Features Double Data Rate DDR SDRAM MT46V128M4 – 32 Meg x 4 x 4 banks MT46V64M8 – 16 Meg x 8 x 4 banks MT46V32M16 – 8 Meg x 16 x 4 banks Features Options • VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V • VDD = +2.6V ±0.1V, VDDQ = +2.6V ±0.1V (DDR400)

MN3204

Abstract: MN3200 20B60 Echo Microphone
Contextual Info: M N3200 Series MN3204 M N 3204 512-STAGE LOW VOLTAGE OPERATION LOW NOISE BBD • General description Unit: mm T he M N 3 2 0 4 is a 512-stage lo w voltage o p e ra tio n V DD = 5V lo w noise B B D th a t provides a signal d ela y o f up to 3 .3 ± 0 .1

Contextual Info: CXD8062Q 1/2 IL08D WIPE MIXER VDD GND VDD GND VDD GND 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 VDD GND 64 63 62 61 60 59 58 57 56 55 54

Contextual Info: CXD2189AR 1/3 IL08 C-MOS CHANNEL ENCODER/DECODER(FOR DIGITAL VCR) GND VDD VDD GND GND GND GND VDD GND GND VDD 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 GND

Contextual Info: HB526C272EN-10IN, HB526C472EN -10IN 1.048.576-word x 72-bit x 2-bank Synchronous Dynamic RAM Module 1.048.576-word x 72-bit x 4-bank Synchronous Dynamic RAM Module HITACHI ADE-203-693C Z Rev. 3.0 May. 15,1997 Description The HB526C272EN, HB526C472EN belong to 8-byte DIMM (Dual In-line Memory Module) family, and