CK 77-1 3 Search Results

20D17

Abstract: 21d8
Contextual Info: TEXAS INSTR Ô9l>1725 T E X AS -CASIC/MEilORYD- I NSTR 77 D E| 0 ^ 1 7 5 5 <ASIC/MEMORY ADVANCE INFORMATION 262,144 DOMOöbl ^7C 4 0 86 1 D TM4256GP8, TM4256GV8 BY 8-BIT DYNAMIC RAM MODULES OCTOBER 1986 — REVISED NOVEMBER 1985 262,144 X 8 Organization V SINGLE-IN-LINE P A CK AG E*

F-ZTAT

Contextual Info: PD11/D11/AUDATA3*4 PD10/D10/AUDATA2*4 PD9/D9/AUDATA1*4 PD8/D8/AUDATA0*4 Vss PD7/D7 PD6/D6 PD5/D5 Vcc PD4/D4 PD3/D3 PD2/D2 PD1/D1 PD0/D0 Vss XTAL MD3 EXTAL MD2 Vcc FWP*1 NMI MD1 MD0 PLLVcc PLLCAP PLLVss PA15/CK Pin Arrangement RES 1.3 84 83 82 81 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57

MAX177

Abstract: MAX177CNG MAX177CWG MAX177ENG MAX177EWG MAX177MRG D1904
Contextual Info: y n y j x i y n C M O S 1 0 -B it A / D C o n v e rte r w ith T rack-an d -H o td _ Features T h e M A X1 77 is a c o m p lete C M O S sa m p lin g 10-bit a n a lo g -to -d ig ita l converter A D C that co m b in e s an o n -c h ip tra ck -a n d -h o ld and voltage reference along

MB89394

Contextual Info: MB89394-PF 1/3 IL00 * C-MOS ENCAPSULATED PERIPHERAL PROCESSOR VDD (+5V) 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 GND VDD (+5V) NC 64 63 62 61 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 —TOP VIEW— 40 39 38 37 36 35 34 33

mpc 1723

Abstract: stk ic 5.1 circuit diagram 74AS890 mpc+1723
Contextual Info: TEXAS INSTR -CL0GIC3- 77 DE 0^1723 003^30 û T 'S Z - 't t - O S SN54AS890, SN74AS890 MICROSEQUENCERS D 2 6 6 2 , NOVEM BER 1 9 8 2 -R E V IS E D A PRIL 1986 14 Bits Wide—Addresses up to 16,384 Words of Microcode with One Chip SN 74AS890 . . . GB PACKAGE

SEG61

Contextual Info: MSM6660-01GS-V1K 1/2 IL08 * C-MOS LCD DRIVER 41 45 50 55 60 64 - TOP VIEW - 65 40 70 35 V DD (+4V to 6V) 75 30 GND 80 NOTE ; V DD VLC1 VLC2 VLC3 24 20 15 10 5 1 25 GND PIN No. I/O SIGNAL PIN No. I/O SIGNAL PIN No. I/O SIGNAL PIN No. I/O SIGNAL 1

mlt 22

Abstract: star delta starter single line drawing LQFP144 "7 segment display" 3102 STR712FR2H6 ISO7816-3 LFBGA144 LFBGA64 LQFP64 STR710
Contextual Info: STR71xF ARM7TDMI 32-bit MCU with Flash, USB, CAN 5 timers, ADC, 10 communications interfaces Features • ■ ■ ■ Core – ARM7TDMI 32-bit RISC CPU – 59 MIPS @ 66 MHz from SRAM – 45 MIPS @ 50 MHz from Flash LQFP64 10 x 10 Memories – Up to 256 Kbytes Flash program memory

Contextual Info: HD6437021C02X 1/4 IL08D C-MOS 32-BIT MICROPROCESSOR GND VDD GND GND VDD GND GND VDD VDD GND GND GND VDD GND GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100

Contextual Info: CXD8056Q 1/4 IL00 * C-MOS NAM CROSS POINT GND VDD (+5 V) GND VDD (+5 V) GND 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 GND 64 63

Contextual Info: CXD8160Q 1/2 IL08D C-MOS CHROMA LINE CRAWL CANCELLER AND DIGITAL CLAMPER GND GND 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 VDD VDD GND GND GND CXD8160 : NC CXD8935 : GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 65 66 67 68 69

Contextual Info: HB526C264EN-10IN, HB526C464EN-10IN 1,048,576-word x 64-bit x 2-bank Synchronous Dynamic RAM Module HITACHI ADE-203-737C Z Rev. 3.0 May. 15,1997 Description The HB526C264EN, HB526C464EN belong to 8-byte DIMM (Dual In-line Memory Module) family, and have been developed as an optimized main memory solution for 8-byte processor applications. The

Contextual Info: 512Mb: x4, x8, x16 DDR SDRAM Features Double Data Rate DDR SDRAM MT46V128M4 – 32 Meg x 4 x 4 banks MT46V64M8 – 16 Meg x 8 x 4 banks MT46V32M16 – 8 Meg x 16 x 4 banks Features Options • VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V • VDD = +2.6V ±0.1V, VDDQ = +2.6V ±0.1V (DDR400)

Contextual Info: CXD8062Q 1/2 IL08D WIPE MIXER VDD GND VDD GND VDD GND 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 VDD GND 64 63 62 61 60 59 58 57 56 55 54

Contextual Info: CXD2189AR 1/3 IL08 C-MOS CHANNEL ENCODER/DECODER(FOR DIGITAL VCR) GND VDD VDD GND GND GND GND VDD GND GND VDD 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 GND

Contextual Info: CXD8060Q 1/4 IL00D C-MOS POLAR COORDINATE GND GND VDD GND VDD GND GND VDD VDD GND GND GND VDD GND GND VDD GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 91 92 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 128K x 36 and 256K x 18 Bit Pipelined ZBT RAM Synchronous Fast Static RAM Order this document by MCM63Z736/D MCM63Z736 MCM63Z818 The ZBT RAM is a 4M–bit synchronous fast static RAM designed to provide Zero Bus Turnaround. The ZBT RAM allows 100% use of bus cycles during

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 128K x 36 and 256K x 18 Bit Pipelined ZBT RAM Synchronous Fast Static RAM Order this document by MCM63Z736/D MCM63Z736 MCM63Z818 The ZBT RAM is a 4M–bit synchronous fast static RAM designed to provide Zero Bus Turnaround. The ZBT RAM allows 100% use of bus cycles during

MCM63Z736

Abstract: MCM63Z736TQ143 MCM63Z818
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 128K x 36 and 256K x 18 Bit Pipelined ZBT RAM Synchronous Fast Static RAM Order this document by MCM63Z736/D MCM63Z736 MCM63Z818 The ZBT RAM is a 4M–bit synchronous fast static RAM designed to provide Zero Bus Turnaround. The ZBT RAM allows 100% use of bus cycles during

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 128K x 36 and 256K x 18 Bit Pipelined ZBT RAM Synchronous Fast Static RAM Order this document by MCM63Z736/D MCM63Z736 MCM63Z818 The ZBT RAM is a 4M–bit synchronous fast static RAM designed to provide Zero Bus Turnaround. The ZBT RAM allows 100% use of bus cycles during

HDD32M64F8K

Abstract: HSD32M64F8K
Contextual Info: HANBit HDD32M64F8K DDR SDRAM Module 256Mbyte 32Mx64bit , based on16Mx8,4Banks, 4K Ref., SMM, Part No. HDD32M64F8K GENERAL DESCRIPTION The HDD32M64F8K is a 32M x 64 bit Double Data Rate(DDR) Synchronous Dynamic RAM high-density memory module. The module consists of sixteen CMOS 16M x 8 bit with 4banks DDR SDRAMs in 66pin TSOP-II 400mil packages and 2K

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 128K x 36 and 256K x 18 Bit Flow–Through ZBT RAM Synchronous Fast Static RAM Order this document by MCM63Z737/D MCM63Z737 MCM63Z819 The ZBT RAM is a 4M–bit synchronous fast static RAM designed to provide Zero Bus Turnaround. The ZBT RAM allows 100% use of bus cycles during

MCM63Z737

Abstract: MCM63Z737TQ10 MCM63Z819
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 128K x 36 and 256K x 18 Bit Flow–Through ZBT RAM Synchronous Fast Static RAM Order this document by MCM63Z737/D MCM63Z737 MCM63Z819 The ZBT RAM is a 4M–bit synchronous fast static RAM designed to provide Zero Bus Turnaround. The ZBT RAM allows 100% use of bus cycles during

Contextual Info: HB52RF1289E2U-75B EO 1 GB Registered SDRAM DIMM 128-Mword x 72-bit, 133 MHz Memory Bus, 2-Bank Module 36 pcs of 64 M × 4 Components PC133 SDRAM L E0019H10 (1st edition) (Previous ADE-203-1195A (Z) Preliminary Jan. 30, 2000 Description Pr uc od The HB52RF1289E2U belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been

Contextual Info: HB52R649E1U-A6B/B6B Description L EO 512 MB Registered SDRAM DIMM 64-Mword x 72-bit, 100 MHz Memory Bus, 1-Bank Module 18 pcs of 64 M × 4 Components PC100 SDRAM E0022H10 (1st edition) (Previous ADE-203-1192A (Z) Preliminary Jan. 31, 2001 uc od Pr The HB52R649E1U belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been developed