CJC HV CAPACITOR Search Results
CJC HV CAPACITOR Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
---|---|---|---|---|---|
NFM15PC755R0G3D | Murata Manufacturing Co Ltd | Feed Through Capacitor, | |||
NFM15PC435R0G3D | Murata Manufacturing Co Ltd | Feed Through Capacitor, | |||
NFM15PC915R0G3D | Murata Manufacturing Co Ltd | Feed Through Capacitor, | |||
DE6B3KJ101KA4BE01J | Murata Manufacturing Co Ltd | Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive | |||
DE6B3KJ331KB4BE01J | Murata Manufacturing Co Ltd | Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive |
CJC HV CAPACITOR Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: ANALOG DEVICES Universal Multichannel Industrial Signal Conditioning ADC PRELIMINARY TECHNICAL DATA AD280 FEATURES Four Input Channels, w ith Protection and Switchable A ttenuation Provision for Cold Junction Sensor Programmable Excitation Sources for RTD M easure |
OCR Scan |
18-Bit 44-Lead | |
P113E
Abstract: OP413 equivalent ely 0325
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OCR Scan |
OP113/OP213/OP413 OP113 1805a-0-2/98 P113E OP413 equivalent ely 0325 | |
AD685
Abstract: cjc hv capacitor
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OCR Scan |
AD280 18-Bit 280-ED 44-Lead AD685 cjc hv capacitor | |
Contextual Info: 2N7638-GA Normally – OFF Silicon Carbide Junction Transistor VDS = 600 V RDS ON = 170 mΩ ID (Tc = 25°C) = 20 A hFE (Tc = 25°C) = Features Package • RoHS Compliant 225°C maximum operating temperature Electrically Isolated Base Plate |
Original |
2N7638-GA 2N7638 8338E-48 0733E-26 73E-10 86E-10 90E-2 2N7638-GA | |
Contextual Info: 2N7636-GA Normally – OFF Silicon Carbide Junction Transistor Features Package • RoHS Compliant 225°C maximum operating temperature Electrically Isolated Base Plate Gate Oxide Free SiC Switch Exceptional Safe Operating Area |
Original |
2N7636-GA 2N7636 8338E-48 0733E-26 37E-10 97E-10 50E-02 2N7636-GA | |
2n2222 spice modelContextual Info: 2N7637-GA Normally – OFF Silicon Carbide Junction Transistor VDS = 600 V RDS ON = 170 mΩ ID (Tc = 25°C) = 20 A hFE (Tc = 25°C) = Features Package • RoHS Compliant 225°C maximum operating temperature Electrically Isolated Base Plate |
Original |
2N7637-GA 2N7637 8338E-48 0733E-26 73E-10 86E-10 90E-2 2N7637-GA 2n2222 spice model | |
Contextual Info: 2N7635-GA Normally – OFF Silicon Carbide Junction Transistor Features Package • RoHS Compliant 225°C maximum operating temperature Electrically Isolated Base Plate Gate Oxide Free SiC Switch Exceptional Safe Operating Area |
Original |
2N7635-GA 2N7635 8338E-48 0733E-26 37E-10 97E-10 50E-02 2N7635-GA | |
Contextual Info: 2N7639-GA Normally – OFF Silicon Carbide Junction Transistor VDS = 600 V RDS ON = 60 mΩ ID (Tc = 25°C) = 32 A hFE (Tc = 25°C) = Features Package • RoHS Compliant 225°C maximum operating temperature Electrically Isolated Base Plate |
Original |
2N7639-GA 2N7639-GA 8338E-48 0733E-26 2281E-10 33957E-9 20E-03 | |
diode 0A70
Abstract: GA05JT01-46
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Original |
GA05JT01-46 GA05JT01 8338E-48 0733E-26 16E-10 021E-10 050E-2 diode 0A70 GA05JT01-46 | |
Contextual Info: 2N7640-GA Normally – OFF Silicon Carbide Junction Transistor VDS = 600 V RDS ON = 60 mΩ ID (Tc = 25°C) = 32 A hFE (Tc = 25°C) = Features Package • RoHS Compliant 225°C maximum operating temperature Gate Oxide Free SiC Switch |
Original |
2N7640-GA 2N7640 8338E-48 0733E-26 2281E-10 33957E-9 20E-03 2N7640-GA | |
Contextual Info: GA05JT03-46 Normally – OFF Silicon Carbide Junction Transistor Features Package • RoHS Compliant 225°C maximum operating temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity |
Original |
GA05JT03-46 GA05JT03 8338E-48 0733E-26 16E-10 021E-10 050E-2 | |
Contextual Info: GA50JT06-258 Normally – OFF Silicon Carbide Junction Transistor Features • VDS = 600 V RDS ON = 25 mΩ ID (Tc = 25°C) = 100 A hFE (Tc = 25°C) = 105 Package 225°C maximum operating temperature Gate Oxide Free SiC Switch |
Original |
GA50JT06-258 O-258 GA50JT06 00E-47 26E-26 3989E-9 026E-09 00E-3 | |
Contextual Info: GA50JT12-247 Normally – OFF Silicon Carbide Junction Transistor Features Package • RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity |
Original |
GA50JT12-247 O-247 GA50JT12 833E-48 073E-26 398E-9 026E-09 00E-3 | |
Contextual Info: GA20SICP12-263 Silicon Carbide Junction Transistor/Schottky Diode Co-Pack VDS RDS ON ID (Tc = 25°C) ID (Tc = 145°C) hFE (Tc = 25°C) Features Package • RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch |
Original |
GA20SICP12-263 O-263-7L) Applicatio0SICP12 GA20SICP12 833E-48 073E-26 752E-12 01E-09 50E-03 | |
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Contextual Info: GA10SICP12-247 Silicon Carbide Junction Transistor/Schottky Diode Co-Pack Features Package • RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier |
Original |
GA10SICP12-247 O-247AB 427E-12 1373E-12 0E-03 GA10SICP12 55E-15 71739E-05 40E-10 00E-10 | |
Contextual Info: GA20SICP12-247 Silicon Carbide Junction Transistor/Schottky Diode Co-Pack Features Package • RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier |
Original |
GA20SICP12-247 O-247AB 0SICP12 GA20SICP12 833E-48 073E-26 752E-12 01E-09 50E-03 | |
Contextual Info: GA05JT12-263 Normally – OFF Silicon Carbide Junction Transistor Features Package • RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity |
Original |
GA05JT12-263 O-263-7L) GA05JT12 8338E-48 0733E-26 254E-12 0E-1209 | |
Contextual Info: GA16JT17-247 Normally – OFF Silicon Carbide Junction Transistor Features Package • RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity |
Original |
GA16JT17-247 O-247 GA16JT17 833E-48 073E-26 4E-12 014E-09 500E-3 | |
Contextual Info: GA10JT12-263 Normally – OFF Silicon Carbide Junction Transistor Features Package • RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity |
Original |
GA10JT12-263 O-263-7L) GA10JT12 833E-48 073E-26 39E-12 1373E-12 | |
Contextual Info: GA20JT12-263 Normally – OFF Silicon Carbide Junction Transistor Features Package • RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity |
Original |
GA20JT12-263 O-263-7L) GA20JT12 833E-48 073E-26 4E-12 014E-09 500E-3 | |
Contextual Info: GA04JT17-247 Normally – OFF Silicon Carbide Junction Transistor Features Package • RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity |
Original |
GA04JT17-247 O-247 GA04JT17 8338E-48 0733E-26 254E-12 0E-1209 | |
ga10jt12Contextual Info: GA10JT12-247 Normally – OFF Silicon Carbide Junction Transistor Features Package • RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity |
Original |
GA10JT12-247 O-247 GA10JT12 833E-48 073E-26 39E-12 1373E-12 | |
Contextual Info: GA100JT12-227 Normally – OFF Silicon Carbide Junction Transistor Features Package • RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier |
Original |
GA100JT12-227 OT-227 GA100JT12-227 GA100JT12 833E-48 073E-26 398E-9 | |
Contextual Info: GA05JT12-247 Normally – OFF Silicon Carbide Junction Transistor Features Package • RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity |
Original |
GA05JT12-247 O-247 GA05JT12 8338E-48 0733E-26 254E-12 0E-1209 |