GA50JT06 Search Results

GA50JT06 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
GA50JT06-258		GeneSiC Semiconductor	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - TRANS SJT 600V 100A	Original	PDF	1.15MB

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GeneSic Semiconductor Inc


GeneSic Semiconductor Inc GA50JT06-258 TRANS SJT 600V 100A TO258
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DigiKey	GA50JT06-258	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
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GA50JT06 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Die Datasheet Normally – OFF Silicon Carbide Junction Transistor GA50JT06-CAL VDS RDS ON ID (Tc = 25°C) hFE (Tc = 25°C) = = = = 600 V 25 mΩ 100 A 105 Features •        250°C maximum operating temperature Gate Oxide Free SiC switch	Original	GA50JT06-CAL GA50JT06 00E-47 26E-28 3989E-9 026E-09 00E-3 GA50JT06-CAL	PDF
GA50JT06-CAL SPICE Abstract: high-temperature-sic-bare-die Contextual Info: GA50JT06-CAL SPICE Model Parameters This is a secure document. Please copy this code from the SPICE model PDF file on our website into LTSPICE (version 4) software for simulation of the GA50JT06-CAL.	Original	GA50JT06-CAL sic/baredie/sjt/GA50JT06-CAL GA50JT06-CAL. 03-Mar-2014 GA50JT06 00E-47 26E-28 3989E-9 026E-09 00E-3 GA50JT06-CAL SPICE high-temperature-sic-bare-die	PDF
GA50JT06258_SPICE Contextual Info: GA50JT06-258 Section VII: SPICE Model Parameters Please copy this code from the SPICE model PDF file on our website into LTSPICE (version 4) software for simulation of the GA50JT06-258.	Original	GA50JT06-258 sic/sjt/GA50JT06258 GA50JT06-258. 12-DEC-2014 GA50JT06 00E-47 26E-26 3989E-9 026E-09 00E-3 GA50JT06258_SPICE	PDF
Contextual Info: GA50JT06-258 Normally – OFF Silicon Carbide Junction Transistor Features •         VDS = 600 V RDS ON = 25 mΩ ID (Tc = 25°C) = 100 A hFE (Tc = 25°C) = 105 Package 225°C maximum operating temperature Gate Oxide Free SiC Switch	Original	GA50JT06-258 O-258 GA50JT06 00E-47 26E-26 3989E-9 026E-09 00E-3	PDF