CIRCLE OF CONSTANT NOISE Search Results

matching with smith chart

Abstract: AN-1852 chart AN1852 APP1852 MAX2320 MAX2720 MAX2721 lna 30MHz to 2214
Contextual Info: Maxim > App Notes > WIRELESS, RF, AND CABLE Keywords: lna, rf, rfic, amplifier, stability, power gain, transmission lines, rfics, theory, smith chart, rf ics, radio frequency, amplifiers, low noise amplifier, amps Jan 09, 2003 APPLICATION NOTE 1852 Low-Noise Amplifier Stability Concept to Practical Considerations,

circle surround 2 IC

Abstract: Using Linvill Techniques LS12 MAX2320 MAX2720 MAX2721 SS11 app abstract
Contextual Info: Maxim > App Notes > WIRELESS, RF, AND CABLE Keywords: lna, rf, rfic, amplifier, stability, power gain, transmission lines, rfics, theory, smith chart, rf ics, radio frequency, amplifiers, low noise amplifier, amps Jan 09, 2003 APPLICATION NOTE 1851 Low-Noise Amplifier Stability Concept to Practical Considerations,

APP1851

Abstract: LS12 MAX2320 SS11 s11s
Contextual Info: Maxim > App Notes > Wireless and RF Keywords: lna, rf, rfic, amplifier, stability, power gain, transmission lines, rfics, theory, smith chart, rf ics, radio frequency, amplifiers, low noise amplifier, amps Jan 09, 2003 APPLICATION NOTE 1851 Low-Noise Amplifier Stability Concept to Practical Considerations,

RF transistors with s-parameters

Abstract: MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor s11 s12 s21 s22 Hewlett-Packard transistor microwave
Contextual Info: High-Frequency Transistor Primer Part II Noise and S-parameter Characterization This is the second part of the Hewlett-Packard High Frequency Transistor Primer series. It is an introduction to the noise and S-parameter characterization of GaAs FET and silicon bipolar

high power FET transistor s-parameters

Abstract: transistor s11 s12 s21 s22 FET transistors with s-parameters transistor s parameters noise 2S12 circle of constant Noise MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT bipolar transistor ghz s-parameter s21a1
Contextual Info: High-Frequency Transistor Primer Part II Noise and S-parameter Characterization This is the second part of the Agilent Technologies High Frequency Transistor Primer series. It is an introduction to the noise and S-parameter characterization of GaAs FET and silicon bipolar

transistor s11 s12 s21 s22

Abstract: 5091-8350E MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT high power FET transistor s-parameters s11a1 s-parameter s11 s12 s21
Contextual Info: High-Frequency Transistor Primer Part II Noise and S-parameter Characterization This is the second part of the Hewlett-Packard High Frequency Transistor Primer series. It is an introduction to the noise and S-parameter characterization of GaAs FET and silicon bipolar

gummel

Abstract: small signal high frequency bipolar transistor IC sequential DATA BASE 60Ghz gex 96 a TRANSISTOR 30GHZ transistor RBV cbv2 Y parameters of transistors in high frequency
Contextual Info: IEEE BCTM 6.1 Im proved E xtraction o f B ase and E m itter R esistan ce from Sm all Signal H igh Frequency A d m itta n ce M easurem ents W.J: Kloosterm an, J.C.J. Paasschens and D.B.M . Klaassen Philips Research Laboratories, Prof. Holstlaan 4, 5656 A A Eindhoven, The Netherlands

APP742

Abstract: smith chart smith MAX2320 MAX2338 MAX2358 MAX2387 MAX2388 MAX2472 matching with smith chart
Contextual Info: Maxim > App Notes > WIRELESS, RF, AND CABLE Keywords: smith chart, RF, impedance matching, transmission line Jul 22, 2002 APPLICATION NOTE 742 Impedance Matching and the Smith Chart: The Fundamentals Abstract: Tutorial on RF impedance matching using the Smith Chart. Examples are shown plotting reflection

MAX2320

Abstract: MAX2338 MAX2358 MAX2472 SIEMENS saw filter Maxim Integrated MAX2640 28 27 app abstract
Contextual Info: Maxim > App Notes > Wireless, RF, and Cable Keywords: smith chart, RF, impedance matching, transmission line Jul 22, 2002 APPLICATION NOTE 742 Impedance Matching and the Smith Chart: The Fundamentals Abstract: Tutorial on RF impedance matching using the Smith chart. Examples are shown plotting reflection

smith chart

Abstract: max2640 smith smith MAX2320 MAX2338 MAX2387 MAX2388 MAX2640 MAX2641 MAX2642
Contextual Info: WIRELESS, RF, AND CABLE Application Note 742: Mar 23, 2001 Impedance Matching and the Smith Chart: The Fundamentals Tutorial on RF impedance matching using the Smith Chart. Examples are shown plotting reflection coefficients, impedances and admittances. A sample matching network is designed at 60 MHz using graphical methods.

ADL5521/23

Contextual Info: Preliminary Technical Data Sheet FEATURES 400 MHz to 4000 MHz Low Noise Amplifier ADL5523 FUNCTIONAL BLOCK DIAGRAM Operation from 400 MHz to 4000 MHz Noise figure of 0.9 dB at 900 MHz Including external input match Gain of 21.5 dB at 900 MHz OIP3 of 35.0 dBm at 900 MHz

Contextual Info: 400 MHz to 4000 MHz Low Noise Amplifier ADL5521 Preliminary Technical Data FEATURES Operation from 400 MHz to 4000 MHz Noise figure of 0.8 dB at 900 MHz Including external input match Gain of 20.0 dB at 900 MHz OIP3 of 37.7 dBm at 900 MHz P1dB of 22.0 dBm at 900 MHz

BLM21PG600SN1D

Abstract: ATF-50189 ATF50189 RO4350
Contextual Info: ATF-50189 2.4 GHz high-linearity second stage LNA/ driver using ATF-50189 Application Note 5106 Introduction EPHEMT biasing Avago Technologies’ATF-50189 is a high linearity, medium power, low noise E-pHEMT FET in a low cost surface mount SOT89 package. It is suitable for high output IP3 LNA Q2

matching circuit of atf 52189

Abstract: BLM21PG600SN1D 53189 ATF-52189 ATF-521P8 ATF-53189 RO4350 depletion mode PHEMT .s2p
Contextual Info: 2.0 GHz high-linearity second stage LNA/ driver using the ATF-52189 Application Note 5245 Introduction EPHEMT Biasing Avago Technologies’ ATF-52189 is a high linearity, medium power, low noise E-pHEMT FET in a low cost surface mount SOT89 package. It is suitable for high

Contextual Info: DETECTORS Opto Diode has developed the first commercially available GaAlAs detectors that can compete with standard silicon photodiodes in terms of size, cost, responsivity and noise. These detectors have the added benefit of a responsivity range that is nearly

si4432

Abstract: Si443x AN427 mathcad Si433X SI4432-V2
Contextual Info: AN427 EZRADIOPRO Si433X & Si443X RX LNA MATCHING 1. Introduction The purpose of this application note is to provide a description of the impedance matching of the RX differential low noise amplifier LNA on the Si433x and Si443x family of RFICs. We desire to simultaneously achieve two goals with the matching network:

AMPSA

Abstract: DS-AMPSA-MTCH-2014.2.5
Contextual Info: AWR Connected AMPSA OVERVIEW AWR Connected™ for AMPSA Impedance-Matching Wizard IMW provides a state-of-the-art synthesis solution for impedance-matching networks for/of RF and microwave circuits and devices such as amplifiers, antennas, etc. Integrating

RO4350B

Abstract: MGA-61563 GRM1555C1H330JZ01E isolator 2 2.1 GHz AN5012 RO4350 0603CS 0604HQ 4350B E4413A
Contextual Info: A 2.2-2.9 GHz Low Noise Amplifier Using Avago Technologies’ MGA-61563 Application Note 5237 MGA-61563 is the high performance GaAs MMIC amplifier fabricated with Avago Technologies’ E-pHEMT process and is targeted for commercial wireless application from 100 MHz to 6 GHz. The MGA-61563 uses

Rogers 4350B

Abstract: 4350B SKY67100 SKY67100-396LF SKY67101 Rogers 4350B substrate
Contextual Info: WHITE PAPER Designing Ultra Low Noise Amplifiers for Infrastructure Receiver Applications By Fikret Altunkilic, Alan Miller, Vivian Tzanakos and Michele Lewis Introduction Amplifiers used in wireless infrastructure receiver applications have the key requirements of low noise, high linearity, and

Contextual Info: DISCRETE SEMICONDUCTORS DAT BFS25A NPN 5 GHz wideband transistor Product specification December 1997 NXP Semiconductors Product specification NPN 5 GHz wideband transistor FEATURES BFS25A PINNING • Low current consumption PIN  Low noise figure DESCRIPTION

MRC034

Abstract: MRC036 MRC031 BFS25A RF NPN POWER TRANSISTOR 3 GHZ Replacement Handbook MRC053
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFS25A NPN 5 GHz wideband transistor Product specification December 1997 NXP Semiconductors Product specification NPN 5 GHz wideband transistor FEATURES BFS25A PINNING • Low current consumption PIN  Low noise figure

cavity resonator

Abstract: two cavity resonator design dielectric resonator oscillator
Contextual Info: TM Single Frequency Cavity Resonator Patent Pending DLI's Cavity Resonators set a new standard for high Q resonator performance across a broad spectrum of frequencies. High Q resonators play a critical role in system noise performance, and employing this advantage is

41ga

Contextual Info: 400 MHz – 4000 MHz Low Noise Amplifier ADL5521 Preliminary Technical Data FEATURES Operation from 400 MHz to 4000 MHz Noise figure of 0.8 dB at 900 MHz Gain of 20.0 dB at 900 MHz OIP3 of 37.7 dBm at 900 MHz P1dB of 22.0 dBm at 900 MHz Integrated bias control circuit

ADL5523

Abstract: ADL5521-EVALZ ADL5521 900MHZ
Contextual Info: 400 MHz – 4000 MHz Low Noise Amplifier ADL5521 Preliminary Technical Data FEATURES Operation from 400 MHz to 4000 MHz Noise figure of 0.8 dB at 900 MHz Including external input match Gain of 20.0 dB at 900 MHz OIP3 of 37.7 dBm at 900 MHz P1dB of 22.0 dBm at 900 MHz