CI 2272 Search Results

Z8530H-8PC

Abstract: RT5522 tda 2282 am9517 WR10
Contextual Info: CI Final Z8530H Advanced Micro Devices Serial Communications Controller SCC DISTINCTIVE CHARACTERISTICS • Two 0- to 2- Mbps full duplex serial channels Each channel has independent oscillator, baud-rate generator, and PLL for clock recovery, dramatically

A1744

Abstract: ci 4565 ic 4565 FIN0243-G-E FIN0244-0 FIN0245-W marking code rdc
Contextual Info: EP 7 xDSL Applications ADSL Low Pass Filter B78417A1744A003 Application Dimensional drawing • Matched to Infineon IC Geminax 10 max. PEB 4565, 3558; PEF 22716, 22720 8 max. 9.4 max. in case 2-section 10.9 max. Features ■ Bobbin material and wire are UL listed

RVPX

Abstract: L7554 T7570 GXA Series resistor
Contextual Info: Data Sheet February 2002 T7570 Programmable PCM Codec with Hybrid-Balance Filter Features • Programmable internal hybrid-balance network ■ Programmable transmit gain — 19.4 dB range, 0.1 dB step size ■ Programmable receive gain — 19.4 dB range, 0.1 dB step size

pc1237h

Abstract: UPC1237H UPC1225H equivalent uPC1225H MR31 relay uPC1225 pc1225h Equivalent to transistor 2sc945 PC1237 2sc 945 p transistor
Contextual Info: N E C ELECTRONICS INC OSE D J b 4 5 7 S 2 S □ □ E E 7 Eh □ ELECT RO NI CS INC 05E 22726 D -BIPOLAR ANALOG INTEGRATED C IR C U IT S 642 752 5 N E C M PC1225H 3 0 - 5 0 W POWER AMPLIFIER DRIVER T-7V - O S C DESCRIPTION fjPC1225H is designed for use with a Hi-Fi power amplifier driver. It is composed of a differential amplifier, a pre driver, a

AM2940DC

Abstract: AM2940DC-B AM2940DM AM2940DM-B AM2940FM AM2940FM-B AM2940XC 2272 aq ZG20 am2940
Contextual Info: Am2940 DMA Address Generator DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION • DMA Address Generation Generates memory address, word count and DONE signal for DMA transfer operation. The Am2940, a 28-pin member of Advanced Micro Devices Am2900 family of Low-Power Schottky bipolar LSI chips, is a

Contextual Info: xDSL transformers ADSL filter chokes Core EP 13, GEMINAX PEB Ordering code: B78421A1639A003 Date: July 2007 Data Sheet  EPCOS AG 2007. Reproduction, publication and dissemination of this data sheet and the information contained therein without EPCOS’ prior express consent is prohibited.

FIN0245-W

Abstract: FIN0295-F FIN0296-N-E
Contextual Info: xDSL transformers ADSL low pass filter Core EP 7, GEMINAX PEB Ordering code: B78417A1744A003 Date: July 2007 Data Sheet  EPCOS AG 2007. Reproduction, publication and dissemination of this data sheet and the information contained therein without EPCOS’ prior express consent is prohibited.

Contextual Info: xDSL transformers ADSL filter choke Core EP 7, GEMINAX PEB Ordering code: B78417A1706A003 Date: July 2007 Data Sheet  EPCOS AG 2007. Reproduction, publication and dissemination of this data sheet and the information contained therein without EPCOS’ prior express consent is prohibited.

FIN0243-G-E

Abstract: FIN0244-0 FIN0245-W PEB22716 PEB4565 epcos peb4565 epcos peb22716 B78417A1838A003
Contextual Info: xDSL transformers ADSL filter choke Core EP 7, Infineon PEB Ordering code: B78417A1838A003 Date: July 2007 Data Sheet  EPCOS AG 2007. Reproduction, publication and dissemination of this data sheet and the information contained therein without EPCOS’ prior express consent is prohibited.

geminax-max

Contextual Info: xDSL transformers ADSL interface Core EP 7, GEMINAX PEB, GEMINAX-MAX Ordering code: B78417A1698A003 Date: July 2007 Data Sheet  EPCOS AG 2007. Reproduction, publication and dissemination of this data sheet and the information contained therein without EPCOS’ prior express consent is prohibited.

CI 2272 AN

Abstract: hp 5082* guide 5082-2831 hp 5082-2830 5082-2294
Contextual Info: • 4447564 HE WLETT-PACKARD/ GGCHb42 ^32 ■ H P A CMPNTS blE J g J HEWLETT D Schottky Barrier Diode Quads for Double Balanced Mixers 5082-2231 5082-2233 5082-2263 5082-2271/72 5082-2277 5082-2279/80 5082-2291/92 5082-2294 5082-2830/31 Technical Data F eatu res

TLC2262

Abstract: TLC2262A TLC2264 TLV2432 TLV2442
Contextual Info: TLC226x, TLC226xA, TLC226xY Advanced LinCMOS RAIL-TO-RAIL OPERATIONAL AMPLIFIERS SLOS177 – FEBRUARY 1997 D D D D D Output Swing includes Both Supply Rails Low Noise . . . 12 nV/√Hz Typ at f = 1 kHz Low Input Bias Current . . . 1 pA Typ Fully Specified for Both Single-Supply and

TLC2262

Abstract: TLC2262A TLC2264 TLV2432 TLV2442 chip resistor 49e9
Contextual Info: TLC226x, TLC226xA, TLC226xY Advanced LinCMOS RAIL-TO-RAIL OPERATIONAL AMPLIFIERS SLOS177 – FEBRUARY 1997 D D D D D Output Swing includes Both Supply Rails Low Noise . . . 12 nV/√Hz Typ at f = 1 kHz Low Input Bias Current . . . 1 pA Typ Fully Specified for Both Single-Supply and

RLS matlab

Abstract: lms 5161 MAGNETIC Moller Sound Design hearing LMS adaptive filter matlab Gardner audio sound signal HRTF adaptive filter matlab RLS ALGORITHM
Contextual Info: IMMERSIVE AUDIO RENDERING ALGORITHMS USING THE TI C62 EVM BOARD Alexei Ossadtchi, Athanasios Mouchtaris, and Chris Kyriakakis Integrated Media Systems Center University of Southern California 3740 McClintock Ave., EEB 432 Los Angeles, California 90089-2564, U.S.A.

AGR09090EF

Abstract: JESD22-C101A ZX18 grm40x7r103k100al
Contextual Info: Preliminary Data Sheet April 2004 AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution

100B120JW500X

Abstract: grm40x7r103k100al 100B470JW500X 100B100JW500X
Contextual Info: Preliminary Data Sheet December 2003 AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution

Contextual Info: Preliminary Data Sheet December 2003 AGR09090EF 90 W, 921 MHz—960 MHz, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution

TB 1226 BN

Abstract: TB GUA 5365 MATERIAL TB GUA 5365 MATERIAL NEOPRENE E-23018 tb 1229 bn sj 2258 emp 5523 ASTM A123 galvanized iron thermal conductivity UL514
Contextual Info: 412031.A01 FIT 3/12 3/20/03 3:02 PM Page 1 A Introduction. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . A2 Tables and Specifications . . . . . . . . . . . . . . . . . . . . . . A3 Rigid Metal Conduit/Intermediate Metal Conduit Fittings . . . . . . . . . . . . . . . . . . . A4-A38

a2682

Abstract: DA 2822 M 20SP 005 IL-123 2272a IC 2822 2273A 2183N
Contextual Info: T HIRD ANGLE P R OJE CT I ON A L T E R A T I ON a // fi n // il li il il H H a il a 2474KCV 2564KCZ 2684KCZ 2824KCZ 2105KCZ 0 .8 2 1 .0 8 24 ( 105) li il L i , L 2 0.3510.2 A E, li it il n il li Modification: II a li li (type Z -» Y ),{R e u sa b le reel}O

MOSFET J162

Abstract: J473 MOSFET J147
Contextual Info: Preliminary Data Sheet March 2004 AGRA10XM 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Performance Features The AGRA10 is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for Nordic Mobile Telephone (NMT) 460 MHz

AGRA10E

Abstract: AGR045010 AGRA10EU JESD22-C101A 2743019446 tns capacitors
Contextual Info: Preliminary Data Sheet January 2004 AGRA10E 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 865 MHz to 895 MHz The AGRA10E is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable

tns capacitors

Abstract: capacitor F3 037 02 100B120FW500X
Contextual Info: Preliminary Data Sheet June 2004 AGRA10E 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 865 MHz to 895 MHz The AGRA10E is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor

TLV2262

Abstract: TLV2262AID TLV2262CD TLV2264 TLV2432 TLV2442
Contextual Info: TLV226x, TLV226xA, TLV226xY Advanced LinCMOS RAIL-TO-RAIL OPERATIONAL AMPLIFIERS SLOS186 – FEBRUARY 1997 D D D D D Output Swing Includes Both Supply Rails Low Noise . . . 12 nV/√Hz Typ at f = 1 kHz Low Input Bias Current . . . 1 pA Typ Fully Specified for Both Single-Supply and

MOSFET J162

Abstract: j162 MOSFET J147
Contextual Info: Preliminary Data Sheet August 2004 AGRA10XM 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Performance Features The AGRA10 is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for Nordic Mobile Telephone (NMT) 460 MHz