CHN 927 Search Results
CHN 927 Datasheets Context Search
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Contextual Info: V ishay I n t e r t e chn o l o g y, I nc . Capacitors - High Reliability and Life Expectancy AND TEC I INNOVAT O L OGY HDMKP N HN VISHAY ESTA POWER CAPACITORS O 19 62-2012 Capacitors for Power Electronics Key Benefits • • • • • • High RMS current rating: up to 150 A |
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17-mar-10vmn-pt9067-1201 | |
ST CHN 510
Abstract: chn 714 chn 725 CHN 725 diode CHN 520
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1n6815msasc25h45k1n6815rmsasc25h45kr+6 | |
CHN 920
Abstract: chn 924 chn 923 CHN 936 CHN 943 CHN 950 CHN 932 chn 947 sport syscon
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de000465f132-bitadsp-21065lchn 920+9 | |
chn 714Contextual Info: Microsemi m m m Santa Ana, CA Progress Powered b y Technology m 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAFX40N30A Features 300 Volts 40 Amps Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability |
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msafx40n30achn 714 | |
chn 714Contextual Info: Microsemi m m m Santa Ana, CA Progress Powered b y Technology m 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAFX11P50A Features 500 Volts 11 Amps High voltage p-channel power mosfet; complements MSAFX24N50A Ultrafast body diode |
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msafx11p50amsafx24n50amsc0308a20voc+1 | |
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Contextual Info: Microsemi r n m m Santa Ana, CA Progress Powered b y Technology m 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAFX76N07A Features 70 Volts 76 Amps Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability |
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msafx76n07a | |
chn 714Contextual Info: Microsemi m m m S a n ta A n a , C A m Progress Powered b y Technology 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAEZ50N10A MSAFZ50N10A Features 100 Volts 50 Amps Ultrafast rectifier in parallel with the body diode (MSAE type only) |
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msaez50n10amsafz50n10achn 714 | |
chn 714Contextual Info: Microsemi m m m Santa Ana, CA Progress Powered b y Technology m 2830 S. F a irvie w St. Santa Ana, C A 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAFX20N60A Features 600 Volts 20 Amps Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability |
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msafx20n60achn 714 | |
chn 714Contextual Info: Microsemi m m m Santa Ana, CA m Progress Powered b y Technology 2830 S. F a irvie w St. Santa Ana, C A 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAFX75N10A Features 100 Volts 75 Amps Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability |
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msafx75n10achn 714 | |
CHN 950
Abstract: chn 714
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msaer30n20amsafr30n20achn 950chn 714 | |
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Contextual Info: Microsemi r n m m Santa Ana, CA m Progress Powered b y Technology 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAEX8P50A Features • 500 Volts 8 Amps High voltage p-channel power mosfet with parallel fast switching, soft |
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msaex8p50amsafx24n50abreak0020voc | |
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Contextual Info: Microsemi m m m Santa Ana, CA m 2830 S. F a irvie w St. Santa Ana, C A 92704 PH: 714 979-8220 FAX: (714) 966-5256 Progress Powered b y Technology MSAER38N10A MSAFR38N10A Features 100 Volts 38 Amps Ultrafast rectifier in parallel with the body diode (MSAE type only) |
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msaer38n10amsafr38n10a | |
CHN b42
Abstract: chn 743 pin of chn 743 chn 529 CHN 524 chn 729 CHN 849 CHN 616 CHN 847 RYM 17-18
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adsp-21065li-127i-12816-bit+10 | |
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Contextual Info: Microsemi m m m Santa Ana, CA m 2830 S. F a irvie w St. Santa Ana, C A 92704 PH: 714 979-8220 FAX: (714) 966-5256 Progress Powered b y Technology MSAEZ33N20A MSAFZ33N20A Features 200 Volts 33 Amps Ultrafast rectifier in parallel with the body diode (M SAE type only) |
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msaez33n20amsafz33n20a | |
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CHN 714Contextual Info: Microsemi m m m S a n ta A n a , C A m Progress Powered b y Technology 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAGZ52F120A MSAHZ52F120A Features 1200 Volts 52 Amps Rugged polysilicon gate cell structure high current handling capability, latch-proof |
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msagz52f120amsahz52f120az52f120bchn 714 | |
chn 547
Abstract: chn 832 chn+547 CHN 927
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10/sfs04404180-yyy-113ryy1chn 547chn 832+2 | |
TRANSISTOR chn 814
Abstract: transistor CHN 946 chn 548 chn 839 q -chn 752 transistor chn 547 chn 809 CHN 507 CHN 741 chn 529
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bfp92a18-mar-97ar-97transistor chn 814+9 | |
TDA 8375 pin voltageContextual Info: VLSI T ec h n o lo g y , in c . VL85C30 ENHANCED SERIAL COMMUNICATIONS CONTROLLER ESCC FEATURES DESCRIPTION • Enhanced SCC functions support DMA - 14-bit byte counter - 19-bit wide FIFO • Low power consuming CMOS The VL85C30 CMOS Enhanced Serial Communications Controller (ESCC) is a |
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vl85c3014-bit19-bittda 8375 pin voltage | |
rx1a 1244
Abstract: CHN 616 ice 8040 ADSP-21065L h 945 p 4000 CMOS texas instruments 0x200014 F15-F8 PM48 multi timer Chn 835
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adsp-21065li-127i-12816-bit+9 | |
chn 734
Abstract: FM3316 CHN 545 interface 8KB ROM and 16KB RAM to 8051 fm23mld16 FM25L04 MLF68 FM24C16A FM22L16 FM28V020 MATERIALS
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300-millionchn 734fm3316chn 545+7 | |
VL82C331-FC
Abstract: VL82c311 VL82C332-FC 386DX motherboard scamp VLB2C386-SET laptop MOTHERBOARD Chip Level MANUAL VL82C331FC topcat 386sX Single Board Computer
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386dx80386dxpb-001bvl82c331-fc+9 | |
mdd 2605
Abstract: HCPL 1458 8 pin opto KS0108 128X64 graphical LCD mdd 2601 transistor chn 952 hitachi INVC 618 Data Vision P135 H4 led smd headlight bulb transistor CHN 64 946 transistor chn 943
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element-14element14mdd 2605hcpl 1458 8 pin opto+8 | |
R/CHN 041 diodeContextual Info: V L S I Te c h n o l o g y in c . VGT300 SERIES 1.0-MICRON GATE ARRAY SERIES FEATURES ^ s • Advanced f.O microij/idrawn silicon gate'technutbgy • Seven array sizes from 30,300 to 246,500 available gates • Continuous Gate architecture for maximum layout efficiency |
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vgt300r/chn 041 diode | |
88356
Abstract: LTC3718 LTC-3710 LTC3710G LTC-3710G LTC-3718P
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b88mwbltc-371088356ltc3718+3 | |