ST CHN 510
Abstract: chn 714 chn 725 CHN 725 diode CHN 520
Contextual Info: • Microsemi m m Santa Ana, CA m 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 Progress Powered b y Technology 1N6815 (MSASC25H45K) Features 1N6815R Tungsten/Platinum schottky barrier for very low VF Oxide passivated structure for very low leakage currents
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1n6815msasc25h45k1n6815rmsasc25h45kr+6msc1032ast chn 510chn 714chn 725chn 725 diodechn 520
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1N6815
Abstract: 1N6815R MSASC25H45K MSASC25H45KR PS11 MSASC25H45KS
Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 1N6815 (MSASC25H45K) 1N6815R Features • • • • • • • • • Tungsten/Platinum schottky barrier for very low VF Oxide passivated structure for very low leakage currents
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1n6815msasc25h45k1n6815rmsasc25h45kv+5msasc25h45ksmsasc25h45kretersmsc1458amsasc25h45krps11
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1N6815
Abstract: 1N6815R MSASC25H45K MSASC25H45KR MSC1032
Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 1N6815 (MSASC25H45K) Features • • • • • • Tungsten/Platinum schottky barrier for very low VF Oxide passivated structure for very low leakage currents Guard ring protection for increased reverse energy capability
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1n6815msasc25h45k1n6815rmsasc25h45kr+2msc1032amsc1032
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