88356 Search Results
88356 Price and Stock
Amphenol Corporation M24308/8-356- Bulk (Alt: M24308/8-356) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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M24308/8-356 | Bulk | 9 Weeks | 25 |
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Amphenol Corporation M12883/56-01 WCRSE116797 - Bulk (Alt: RSE116797) |
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M12883/56-01 WC | Bulk | 23 Weeks | 25 |
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Molex 120108-8356- Bulk (Alt: 1201088356) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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120108-8356 | Bulk | 14 Weeks | 12 |
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Amphenol Corporation SF8835-6000- Trays (Alt: SF8835-6000) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SF8835-6000 | Tray | 12 Weeks | 25 |
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SF8835-6000 | 15 Weeks | 25 |
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NI 788356-01Interface Module Gmsl Pxie-1489 12 Gbps; |Ni/emerson 788356-01 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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788356-01 | Bulk | 1 |
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88356 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: ICTE5 thru ICTE18C, 1N6373 thru 1N6386 Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a 10/1000 s waveform, repetitive |
Original |
icte18c1n63731n638622-b106+4 | |
XD 105 94V-0
Abstract: BFM 41A Zener diode smd marking code 39c transistor 1BW GENERAL SEMICONDUCTOR TVS CJ 53B 30 097 transistor 110 3CG
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vse-db0002-1102xd 105 94v-0bfm 41azener diode smd marking code 39c+4 | |
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Contextual Info: ICTE5.0 thru ICTE18C 1N6373 thru 1N6386 Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors Major Ratings and Characteristics VWM 5.0 V to 18 V PPPM 1500 W PD 6.5 W IFSM 200 A Tj max. 175 °C Case Style 1.5KE Features Mechanical Data • Glass passivated chip junction |
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icte18c1n63731n63862002/95/ec+2 | |
TRANSISTOR SMD MARKING CODE 1BW
Abstract: SmD TRANSISTOR 1bw transistor SMD 5BW TRANSISTOR SMD MARKING CODE 1AM 5bw smd smd code marking 5bw KL SN 102 94v-0 smd transistor marking 3bw smd transistor 1AM yx 801
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vse-db0002-0710transistor smd marking code 1bwsmd transistor 1bwtransistor smd 5bw+7 | |
88356
Abstract: 1N6373 1N6374 1N6386 ICTE18C ICTE-18C JESD22-B102 J-STD-002
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icte18c1n63731n63862002/95/ec+7 | |
1N6373
Abstract: 1N6374 ICTE18C ICTE-18C JESD22-B102D J-STD-002B 1N637 ICTE18
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icte18c2002/95/ec2002/96/ec08-apr-05+7 | |
28 volt transzorbContextual Info: ICTE5.0 thru ICTE18C, 1N6373 thru 1N6378 & 1N6382 thru 1N6386 Vishay Semiconductors formerly General Semiconductor TRANSZORB Transient Voltage Suppressors Case Style 1.5KE d e d n nge e t x E e Ra Features g a t l Vo 1.0 25.4 MIN. 0.210 (5.3) 0.190 (4.8) |
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icte18c1n63731n63781n6382+4 | |
1N6373
Abstract: 1N6374 1N6386 ICTE18C J-STD-002
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icte18c1n63731n638622-b106+7 | |
88356
Abstract: 1N6373 1N6374 1N6386 ICTE18C ICTE-18C JESD22-B102 J-STD-002
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icte18c1n63731n63862002/95/ec+7 | |
1N6373
Abstract: 1N6374 1N6386 ICTE18C J-STD-002
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icte18c1n63731n638622-b106+6 | |
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Contextual Info: 23456784539A6BCDEF7C699345674F976BCDEF7C6 A2C 3 A2EC 38 11 4C6C!"#$%9C 9E792D364538C&&9A29 69E73D9'C6DC39!7C39 69 2' 4C6C!"#$%9EC ' '( *6+6,%' |
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23456784539a6bcdef345674f976bcdef92d3645+6 | |
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Contextual Info: 23456784539A6BCDEF7C699345674F976BCDEF7C6 A2C 3 A2EC 38 11 4C6C!"#$%&9C 9E792D364538C''9A29 69E73D9 C6DC39!7C39 69 D388A299*2( 4C6C!"#$%&9EC ( |
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23456784539a6bcdef345674f976bcdef92d3645+6 | |
C5362Contextual Info: 23456784539A6BCDEF7C699345674F976BCDEF7C6 A2C 3 A2EC 38 11 4C6C!"#$%&9C 9E792D364538C''9A29 69E73D9 C6DC39!7C39 69 D388A299*2( 4C6C!"#$%&9EC ( |
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23456784539a6bcdef345674f976bcdef92d3645+7 | |
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Contextual Info: ICTE5 thru ICTE18C, 1N6373 thru 1N6386 www.vishay.com Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a |
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icte18c1n63731n638622-b106+4 | |
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Contextual Info: ICTE5.0 thru ICTE18C, 1N6373 thru 1N6386 Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate duty cycle : |
Original |
icte18c1n63731n63862002/95/ec+2 | |
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Contextual Info: ICTE5.0 thru ICTE18C, 1N6373 thru 1N6386 Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate duty cycle : |
Original |
icte18c1n63731n63862002/95/ec+2 | |
1N6373
Abstract: 1N6374 ICTE18C ICTE-18C JESD22-B102D J-STD-002B
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Original |
icte18c2002/95/ec2002/96/ec08-apr-05+5 | |
l6544Contextual Info: 23456784539A6BCDEF7C699345674F976BCDEF7C6 A2 C!"3 A2EC!"38 1 F8#$%&'9 & & 1 ' *6+6' |
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23456784539a6bcdef345674f976bcdef92d3645+7 | |
diode 1n6376 data sheet
Abstract: 1N6377 88356 1N6382 3 Volt transzorb ICTE ICTE-15 Transient Voltage Suppressors transzorb symbol 1N6373
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icte15c1n63731n63771n6382+10 | |