CHIPE ARRAY Search Results

SHH-1M1608-121

Abstract: 401J SHU-1H4516-500J 1m1005 1S1005 SHB-1M1005-400 SHB-1M1005-600 SHB-1M1005-800 chipe array 202J
Contextual Info: Chip Ferrite Beads. 1. Effective for suppressing noise at high frequency, form several MHz to several hundreds MHz. 2. Chip type is suited for preventing the abnormal oscillation from high frequency amplifying circuits. 3. Terminal electrode has excellent solder heat resistance for soldering.

f82c235

Abstract: a19t 82C765 82C235 1NTC0 LG lcd tv tuner 80286 microprocessor schematics 82C601 82c710 sues 1132
Contextual Info: 82C235 System Controller $ ' >"•' fipÉlI «V M M V // S A V A A >V * A * ^ÿV IV fWJ V ÿ . # v . . v K M ^ 0v . 4 v w v v W/ s Single CHIP 286 AT m fÊ P R E L I M I / N A R Y CH!PS* Copyright Nolle* Manual Copyright C 1991, CHIPS aad Technologies. Ine.

ITE 8721

Abstract: fnd 503 7-segment TAA 2761 A 486 motherboard schematic 3860S 486dx isa bios pin assignment RAS 0510 cxd 9897 tn ti77 k244
Contextual Info: ISA/486 C H |p g . CepyTlgtt N ette S o t t r a e C o p y ñ f tt O 1962, a * « * d T e d » a i e s i e * . l w x M t o n i I C o p y r i i h t O 1992 . Q ñ p » » d T c c t n o f a p B » , ! ^ . A B SIduR am i Poned ib UJ5A. Tw dw u U t h w lw lgim iil

746n

Contextual Info: TE XA S IN ST R {A S I C / M E M O R V > 77 De | 0 ^ 1 7 2 5 0040^3 Q TM S47C512 65,536-WORD BY 8-BIT READ-ONLY M EM O RY ADVANCE INFORMATION NOVEMBER 1 9 8 5 65,536 X 8 Organization • Fully Static No Clocks, No Refresh N PACKAGE {TOP VIEW) All Inputs and Outputs TTL and CMOS

METRIX

Abstract: MC29100LC MC821 MC82100LC MC82101LC IMRM
Contextual Info: MC29100/MC82100 MC29101/MC82101 M O TO R O LA D U A L M A R K ED Product Preview T TL F IE L D PROGRAM M ABLE LOGIC A R R A Y F IE L D PROG RAM M ABLE LOGIC A R R A Y (1 6 X 8 X 4 8 F P L A ) T h e M C 2 9 10 0 /M C 8 2 100 (th re e -s ta te o u tp u ts } and th e M C 2 9 1 0 1 /

TMS4732

Contextual Info: TMS4732 4096 W0RD BY 8-BIT READ-ONLY MEMORY M AY 1977 - 4 0 9 6 X 8 Organization R E V IS E D N O V E M B E R 1 9 8 5 N PAC KAG E ITOP VIEW All Inputs and Outputs TTL Compatible A7 H 1 v J 2 4 : A6 : 2 23 A5 c 3 22 A4 : 4 21 20 : A3 : 5 A2 c 6 19 A1 c 7 18

tms*1024

Abstract: 198S 74LS
Contextual Info: TMS47C1024 131.072-W0RD BY 8-BIT READ-ONLY MEMORY ADVANCE INFORMATION NOVEMBER 198S N PACKAGE • 13 1 ,0 7 2 X 8 Organization • Fully Static No Clocks. No Refresh} (TOP VIEW A15 C A12 C A7 E A6C A5 C A4 C A3 C A2C A1Ë AO C Q1 C All Inputs and Outputs TTL and CMOS

IS28F010

Abstract: IS28F010-45PL
Contextual Info: ISSI I S 2 8 F 0 1 0 131,072 x 8 CMOS FLASH MEMORY p r e l im in a r y NOVEMBER 1995 FEATURES • Flash electrica l bu lk chip-e ra se - O ne seco nd typica l chip-e ra se • C M O S low p o w e r con sum p tion - 30 m A m axim um active curre nt - 1 0 0 |iA m axim um sta n d b y curre nt

74LS

Contextual Info: TMS47C512 65,536-WORD BY 8-BIT READ-ONLY MEMORY ADVANCE INFORMATION NOVEMBER 1985 6 5 ,5 3 6 X 8 Organization N PACKAGE 1TOP VIEW Fully S tatic No Clocks, No Refresh) A15Ë 1 LJ28 INcc A12C 2 27 JA14 A7 C 3 26 ÏA13 A6 C 4 25 I] A8 A5 C 5 24 UA9 A4C 6 23 ] A11

Contextual Info: ISSI 262,144 x 8 CMOS FLASH MEMORY p r e l im in a r y SEPTEMBER 1995 FEATURES • High pe rfo rm an ce - 70 ns m axim um acce ss tim e • Flash electrical bulk chip-e ra se - O ne second typica l chip-e ra se • C M O S low p o w e r con sum p tion - 30 m A m axim um active curre nt

Contextual Info: ISSI I S 2 8 F 0 1 0 _ 131,072 x 8 CMOS FLASH MEMORY PRELIMINARY NOVEMBER 1995 FEATURES • Flash electrica l bu lk chip-e ra se - O ne seco nd typica l chip-e ra se H igh pe rfo rm an ce - 45 ns m axim um access tim e • C M O S low p o w e r con sum p tion

A21S

Abstract: ti 2732a s45d 409B 74LS 645q Bipolar PROM programming 74S A31s
Contextual Info: TMS2332 4096-W0RD BY 8-BIT READ-ONLY MEMORY SEPTEMBER 1 9 8 4 - 4 0 9 6 X 8 Organization REVISED NOVEMBER 1 9 8 5 N PAC KAG E TOP VIEW All Inputs and Outputs TTL Compatible A7C A6Q A5£ A4C A 3 [j A2C A id AOC Fully Static (No Clocks. No Refresh) Single 5 -V Power Supply

CA3300

Abstract: CA3306 Zen Research
Contextual Info: CA3306, CA3306A, CA3306C u A p p ie S E M I C O N D U C T O R 6-Bit, 15 MSPS, Flash A/D Converters A ug ust 1997 Description Features • CMOS Low Power with Video Speed T y p The GA3306 family are CMOS parallel (FLASH) analog-to-digital converters designed for applications dem anding both low power

TMS4732

Abstract: TMS2532 74LS si2120
Contextual Info: TMS4732 4096-WORD BY 8-BIT READ-ONLY MEMORY M AY 1977 - 4096 X 8 Organization N • All Inputs and Outputs TTL Compatible • Fully Static No Clocks, No Refresh • Single 5 -V Power Supply • Maxim um Access Tim e from Address T M S 4 7 3 2 -1 5 1 5 0 ns

A5 KNA

Contextual Info: W29C102 f t inbond V n iU/ Electronics Corp. 64K x 16 CMOS FLASH MEMORY GENERAL DESCRIPTION The W29C1Q2 is a 1-megabit, 5-volt only CMOS flash memory organized as 64K x 16 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt Vpp is

Contextual Info: M O S E L V IT E L IC V29C51001T/V29C51001B 1 MEGABIT 131,072 x 8 BIT 5 VOLT CMOS FLASH MEMORY PRELIMINARY Features Description • ■ ■ ■ ■ ■ The V29C51001T/V29C51001B is a high speed 131,072 x 8 bit CMOS flash memory. Programming or erasing the device is done with a single 5 Volt

Contextual Info: M O S E L V IT E L IC V29C51000T/V29C51000B 512K B IT 65,536 x 8 BIT 5 VOLT CMOS FLASH MEMORY PRELIMINARY Features Description • ■ ■ ■ ■ ■ The V29C51000T/V29C51000B is a high speed 65,536 x 8 bit CMOS flash memory. Programming or erasing the device is done with a single 5 Volt

toba

Abstract: CA324E W6022
Contextual Info: O A 'i'ilß HARRIS M M S E M I C O N D U C T O R CMOS Video Speed, 8-Bit, Flash A/D Converter A ug ust 1997 Features • Description CMOS Low Power with SOS Speed Typ . 150mW • Parallel Conversion Technique • 15MHz Sampling Rate (Conversion T im e ). 67ns

IC1232

Abstract: c4742 c1813 C4722 MC2212 C1B25 C2792 C-829 capacitor c829 capacitor 1C9
Contextual Info: KEMET CERAMIC CHIP/STANDARD FEATURES • • • • • Twelve chip sizes COG NPO , X7R, Z5U and Y5V Dielectrics 10, 16, 25, 50, 100 and 200 Volts Standard End Metalization-tin-plated nickel barrier Available Capacitance Tolerance: ±0.10 pF; ±0.25 pF; ±0.5 pF; ±1 %; ±2%; ±3%; ±5%; ±10%;

29F002T

Abstract: 29F002
Contextual Info: ADVANCED INFORMATION MX29F002/002N 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES • • • • • • • • 262,144x 8 only Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current 5MHz - 1uA typical standby current Programming and erasing voltage 5V ± 10%

Contextual Info: MX29F002/002N 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES • • • • • • • • 262,144x 8 only Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current 5MHz - 1uA typical standby current Programming and erasing voltage 5V ± 10%

29F002T

Contextual Info: MX29F002/002N 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES • • • • • • • • 262,144x 8 only Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current 5MHz - 1uA typical standby current Programming and erasing voltage 5V ± 10%

MX29F002BQC-70G

Abstract: 29F002T
Contextual Info: MX29F002/002N T/B 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES • • • • • • • • 262,144x 8 only Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current 5MHz - 1uA typical standby current Programming and erasing voltage 5V ± 10%

Contextual Info: MX29F002/002N 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES • • • • • • • • 262,144x 8 only Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current 5MHz - 1uA typical standby current Programming and erasing voltage 5V ± 10%