CHARACTERIZATION Search Results

IRFP250

Contextual Info: PD-20380B HFA45HI60C Ultrafast, Soft Recovery Diode FRED Features • • • • • • Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Electrically Isolated Ceramic Eyelets VR = 600V VF = 1.7V Qrr = 375nC

Contextual Info: STDID5B N - CHANNEL 55V - 0.1 Ω - 12A TO-252 STripFET POWER MOSFET PRELIMINARY DATA TYPE STDID5B • ■ ■ VDSS R DS on ID 55 V < 0.12 Ω 12 A TYPICAL RDS(on) = 0.1 Ω APPLICATION ORIENTED CHARACTERIZATION ADD SUFFIX "T4" FOR ORDERING IN TAPE

Contextual Info: Evaluates: MAX14970 MAX14970 Evaluation Kit General Description The MAX14970 evaluation kit EV kit provides a proven design to evaluate the MAX14970 dual-channel buffer. The EV kit contains four sections: an application circuit, characterization circuit, and two sets of calibration traces.

P40NF10

Abstract: JESD97 STP40NF10 p40nf
Contextual Info: STP40NF10 N-channel 100V - 0.025Ω - 50A TO-220 Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID STP40NF10 100V <0.028Ω 50A • Exceptional dv/dt capability ■ Low gate charge at 100°C 3 ■ Application oriented characterization

GCBZ670

Abstract: STB75NE75 25c016
Contextual Info: STB75NE75 N - CHANNEL 75V - 0.01 Q. - 75A - D^PAK STripFET POWER MOSFET TYPE STB75NE75 V dss R d S o i i Id 75 V < 0 . 0 1 3 Q. 75 A • . . . TYPICAL R D S (o n ) =0.01 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION

dm 465

Abstract: HFA135NH40 IRFP250 NC4000
Contextual Info: PD -2.465 rev. B 03/99 HFA135NH40 HEXFRED Ultrafast, Soft Recovery Diode TM LUG TERMINAL ANODE Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters a d BASE CATHODE V R = 400V VF typ. ƒ = 1V IF(AV) = 135A

HFA140NJ60D

Abstract: IRFP250
Contextual Info: PD -2.514 rev. A 02/99 HFA140NJ60D HEXFRED Ultrafast, Soft Recovery Diode TM Anode 1 Features Cathode 2 • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters Base AC VR = 600V VF typ. ƒ = 1.2V IF(AV) = 140A Qrr (typ.) = 340nC

DS16F95QML

Abstract: ETS500 5962R0923561VZA LM4050WG2 LM4050WG2.5RLQV texas ldr LDR SPECIFICATION TM1019 Radiation Assured Devices LM4050Q
Contextual Info: 1 Single Event Transient and ELDRS Characterization Test Results for LM4050QML 2.5V Precision Reference Kirby Kruckmeyer, Member, IEEE, Elisa Morozumi, Member, IEEE, Robert Eddy, Thang Trinh, Tom Santiago and Pierre Maillard, Student Member, IEEE Abstract—National Semiconductor’s 100 krad Si low dose

PD245

Contextual Info: PD -2.453 rev. B 02/99 HFA240NJ40C HEXFRED Ultrafast, Soft Recovery Diode TM Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters LUG TERMINAL ANODE 1 LUG TERMINAL ANODE 2 BASE COMMON CATHODE V R = 400V VF typ. ƒ = 1V

STD20NF10

Contextual Info: STD20NF10 N-CHANNEL 100V - 0.038 Ω - 30A IPAK/DPAK LOW GATE CHARGE STripFET II POWER MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STD20NF10 100 V <0.045 Ω 30 A TYPICAL RDS(on) = 0.038 Ω EXCEPTIONAL dv/dt CAPABILITY APPLICATION ORIENTED CHARACTERIZATION

HFA160MD40C

Abstract: IRFP250
Contextual Info: PD-2.454 rev. B 12/98 HFA160MD40C HEXFRED Ultrafast, Soft Recovery Diode TM Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters LUG LUG LUG TERMINAL TERMINAL TERMINAL CATHODE ANODE 1 ANODE 2 Isolated Base

4200-PA

Abstract: 4200-SCS 4210-SMU 7078-TRX-BNC 4200-CAB-20UX 3m 4200 Keithley 236 4200 PA 4200-SMU 4200-MTRX-3
Contextual Info: Semiconductor Characterization System 4200-SCS The powerful test library management tools included allow standardizing test methods and extractions to ensure consistent test results. The 4200-SCS offers tremendous flexibility, with hardware options that include four different

HFA70NK60C

Abstract: IRFP250 017t
Contextual Info: PD -2.460A HFA70NK60C HEXFRED Ultrafast, Soft Recovery Diode TM BASE COMMON CATHODE Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters 1 ANODE 1 2 COMMON CATHODE 3 ANODE 2 VR = 600V VF typ. ƒ = 1.2V IF(AV) = 70A

HFA240NJ40C

Abstract: IRFP250 2453
Contextual Info: PD -2.453 rev. B 02/99 HFA240NJ40C HEXFRED Ultrafast, Soft Recovery Diode TM Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters LUG TERMINAL ANODE 1 LUG TERMINAL ANODE 2 BASE COMMON CATHODE V R = 400V VF typ. ƒ = 1V

HFA210NJ60D

Abstract: IRFP250 PD-2515
Contextual Info: PD -2.515 rev. A 02/99 HFA210NJ60D HEXFRED Ultrafast, Soft Recovery Diode TM Anode 1 Features Cathode 2 • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters Base AC V R = 600V V F typ. ƒ = 1.2V IF(AV) = 210A Qrr (typ.) = 450nC

HFA70NH60R

Abstract: IRFP250
Contextual Info: PD -2.456 rev. B 02/99 HFA70NH60R HEXFRED Ultrafast, Soft Recovery Diode TM LUG TERMINAL CATHODE Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters a d BASE ANODE V R = 600V V F typ. ƒ = 1.2V IF(AV) = 70A

STS2NF100

Contextual Info: STS2NF100 N-CHANNEL 100V - 0.23 Ω - 6A SO-8 STripFET II POWER MOSFET • ■ ■ ■ TYPE VDSS RDS on ID STS2NF100 100 V <0.26 Ω 6A TYPICAL RDS(on) = 0.23 Ω EXCEPTIONAL dv/dt CAPABILITY 100 % AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION

HFA140NH60

Abstract: IRFP250
Contextual Info: PD -2.447 rev. B 03/99 HFA140NH60 HEXFRED Ultrafast, Soft Recovery Diode TM LUG TERMINAL ANODE Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters a d BASE CATHODE V R = 600V V F typ. ƒ = 1.3V IF(AV) = 140A

HFB50HC20C

Contextual Info: PD - 94238A HFB50HC20C Ultrafast, Soft Recovery Diode FRED Features • • • • VR = 200V Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic IF AV = 50A trr = 35ns Description These Ultrafast, soft recovery diodes are optimized to reduce losses and EMI/RFI in high frequency power

D-60

Abstract: HFA60MB60C IRFP250
Contextual Info: PD -2.462 rev. A 03/99 HFA60MB60C Ultrafast, Soft Recovery Diode HEXFRED TM Features ISOLATED BASE • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters (1-3) ANODE 1 (4-6) COMMON CATHODE (7-9) ANODE 2 VR = 600V

13010-01HYC

Abstract: 13010-01HYA 13010-01KYC SVRTR28
Contextual Info: SVRMC28 Series SPACE QUALIFIED HYBRID EMI FILTERS Models Available Input: 28 V nominal 4 A output Qualified to MIL-PRF-38534 Class H and Class K, TOR Compliant SVRMC Series EMI Filter 1.0 DESCRIPTION 1.2 SPACE LEVEL CHARACTERIZATIONS The SVRMC is specifically designed for use with the SVR series

SVRMH28

Abstract: TM2001 DC Line Filters
Contextual Info: SVRMH28 Series SPACE QUALIFIED HYBRID EMI FILTERS Models Available Input: 28 V nominal 2 A output Qualified to MIL-PRF-38534 Class H and Class K, TOR Compliant SVRMH Series EMI Filter 1.0 DESCRIPTION 1.2 SPACE LEVEL CHARACTERIZATIONS The SVRMH is specifically designed for use with the SVR series

Thermal resistance characterization of Power MOSFETs

Abstract: MOSFETs thermal resistance of low power semiconductor
Contextual Info: Thermal resistance characterization of Power MOSFETs Anup Bhalla Alpha & Omega Semiconductor January 2003. I. Introduction Power MOSFET junction temperature influences many operational parameters and device lifetime. To estimate device junction temperature in a circuit, or to compare

ADC16DV160

Abstract: LMH6517EVAL AN1942 AN-1942
Contextual Info: LMH6517 Evaluation Board LMH6517 Evaluation Board National Semiconductor Application Note 1942 Loren Siebert December 1, 2009 30090011 FIGURE 1. LMH6517EVAL Evaluation Board General Description The LMH6517EVAL evaluation board is designed to aid in the characterization of National Semiconductor’s High Speed