Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    CHARACTERISTICS05 Search Results

    CHARACTERISTICS05 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: CMOS STATIC RAM 1 MEG 256K x 4-BIT ADVANCE INFORMATION IDT71028 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 256K x 4 advanced high-speed CMOS static RAM • Equal access and cycle times — Military: 20/25ns — Commercial: 15/17ns • One Chip Select plus one Output Enable pin


    OCR Scan
    idt7102820/25ns15/17ns28-pin+3mil-std-883576-bit200mv PDF

    LV25616

    Abstract: Z639 IS61LV25616 LV2561 IZ21
    Contextual Info: IS61LV25616 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES • High-speed access time: 10, 12, and 15 ns • CMOS low power operation — 60 mW typical operating — 6 |^W (typical) CMOS standby • TTL compatible interface levels


    OCR Scan
    is61lv2561644-pinissiis61lv25616304-bit+5sr040-0alv25616z639lv2561iz21 PDF

    100E111

    Abstract: MC100LVE111
    Contextual Info: 5V/3.3V 1:9 DIFFERENTIAL CLOCK DRIVER w /o ENABLE SYNERGY C'°<' ^ ork SY100E111A/L SEMICONDUCTOR DESCRIPTION FEATURES 3.3V and 5V power supply options 200ps part-to-part skew 50ps output-to-output skew Differential design V bb output Voltage and temperature compensated outputs


    OCR Scan
    200psmc100lve111j28-1sy100e111ajctr+4sy10e111sy10e111ajitrsy100e111100e111 PDF

    Contextual Info: AT29LV010 Features • • • • • • • • • • • • Single 3.3 V + 10% Supply Three-Volt-Only Read and W rite Operation Software Protected Programming Low Power Dissipation 15 mA Active Current 20 iA CMOS Standby Current Fast Read Access Time - 200 ns


    OCR Scan
    at29lv01010-yearat29lv010-20diat29lv010-20ji+6at29lv010-20piat29lv010-25dcat29lv010-25jcat29lv010-25at29lv010-25tcat29lv010-25di PDF

    AT28C64

    Abstract: 28C64 AT28C64-15 AT28C64-20 AT28C64X 5962-87514
    Contextual Info: ATMEL CORP 43E D • h i UÊ l D ? m ? 7 D0G1SS4 2 [ATM AT28C64 ii T - V 6 -/3 - 2 7 Features • Fast Bead A c ce ss Tim e -150ns • Fast Byte Write - 200ns or 1 m s • Self-Timed Byte Write Cycle Internal Address and Data Latches Internal Control Timer


    OCR Scan
    00g1s54at28c64time-150ns200ns+9t-v6-/3-27military/883cmilltary/883cat28c64/x28c64at28c64-15at28c64-20at28c64x5962-87514 PDF

    C6416

    Abstract: IS61C6416 MAJJ IS61C ISSI
    Contextual Info: ISSI IS 6 1 C 6 4 1 6 64K x 16 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: 10, 12,15, and 20 ns • CMOS low power operation — 450 mW typical operating — 250 jjA/V (typical) standby • TTL compatible interface levels • Single 5V ± 10% power supply


    OCR Scan
    is61c641644-pin576-bitsr005-1a+3c6416majjis61c issi PDF

    IS61LV12824

    Contextual Info: ISSI’ IS61LV12824 128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY a d v a n c e in f o r m a t io n S E P T E M B E R 1998 FEATURES DESCRIPTION • The lS S I IS61LV12824 is a high-speed, static RAM organized as 131,072 words by 24 bits. It is fabricated usingISSI's high­


    OCR Scan
    is61lv12824119-pin100-pinsyis61+5lv12824is61lv12824-1is61lv12824-12bis61lv12824-12tqis61lv12824-15b PDF