CGY SO Search Results

MDR 68 pin configuration

Abstract: CGY MW cgy180 pae1
Contextual Info: CGY 180 - 3 V 500 mW RF Power Amplifier Solution for DECT Application Note No. 004 Abstract In the following content a high efficiency GaAs MMIC power amplifier application for DECT is presented. The CGY 180 is characterized on a cost effective and easy to

amplifier 900mhz

Abstract: amplifier siemens marking RF 98 CGY93P
Contextual Info: CGY 93P GaAs MMIC Preliminary Data l l l Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code taped Package CGY 93P

93 ab chip

Contextual Info: GaAs MMIC CGY 93 Data Sheet • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% MW-16 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code taped Package CGY 93

PAE1

Contextual Info: Infineon N c h n c lo g ie i CGY 180 - 3 V 500 mW RF Power Amplifier Solution for DECT Application Note No. 004 Abstract In the following content a high efficiency GaAs MMIC power amplifier application for DECT is presented. The CGY 180 is characterized on a cost effective and easy to

GSM vco

Abstract: gsm 900 amplifier BFP420 Transistor BFR 98 BAS40-04 BFR93AW LQG21N Dual Band Power Amplifier 1 Schematic of the CGY K 3264 transistor IC210
Contextual Info: CGY 98 GSM/PCN Dual Band Power Amplifier 1 Schematic of the CGY 98 PA Application 1.1 Application Board V1.2 Application Note No. 053 Two independent amplifier chains are implemented on the dual band amplifier board V1.2. Each one uses a BFP 420 SIEGET transistor for first-stage amplification, and the

IH33

Abstract: 1AP 164 gsm 900 amplifier d 317 transistor
Contextual Info: Infineon fechnoiogies CGY 98 GSM/PCN Dual Band Power Amplifier 1 Schematic of the CGY 98 PA Application 1.1 Application Board V1.2 Application Note No. 053 Two independent amplifier chains are implemented on the dual band amplifier board V1.2. Each one uses a BFP 420 SIEGET transistor for first-stage amplification, and the

gsm vco

Abstract: bfr93aw schematic gsm 900 amplifier k 3531 transistor
Contextual Info: CGY 98 GSM/PCN Dual Band Power Amplifier 1 Schematic of the CGY 98 PA Application 1.1 Application Board V1.2 Application Note No. 053 Two independent amplifier chains are implemented on the dual band amplifier board V1.2. Each one uses a BFP 420 SIEGET transistor for first-stage amplification, and the

BZW 55 DIODE ZENER

Abstract: diode bzw CGY 8 pin DIODE ZENER BZW 03 S11 zener diode 22C6V2 S22 zener diode Q68000-A5953
Contextual Info: CGY 21 GaAs MMIC ● ● ● ● ● ● ● ● ● CGY 21 Two-stage monolithic microwave IC MMIC amplifier All gold metallization Chip fully passivated Operating voltage range: 3 to 6 V 50 Ω input/output; RLIN RLOUT > 10 dB Gain: 21 dB at 500 MHz Low noise figure: 3.9 dB at 500 MHz

Contextual Info: GaAs Components Application Notes 8 Application Notes CGY 180 - 3 V 500 mW RF Power Amplifier Solution for DECT . . . . . . . . . . . . . . . . .81 15 GHz GaAs-FET Buffered Oscillator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .85

CGY180

Abstract: Q68000-A8882 MMIC marking 81 Siemens MMIC DECT siemens F1189
Contextual Info: GaAs MMIC CGY 180 Datasheet * Power amplifier for DECT and PCS application * Fully integrated 3 stage amplifier * Operating voltage range: 2.7 to 6 V

smd marking AAAA

Abstract: AAAA mmic HL 30 MMIC marking 81 CGY94 Q68000-A9124 Siemens MMIC marking aaa marking AAAA
Contextual Info: GaAs MMIC CGY 94 Preliminary Datasheet * Power amplifier for GSM or AMPS application * Fully integrated 2 stage amplifier * Operating voltage range: 2.7 to 6 V

siemens capacitors

Abstract: marking code 22nh sot23 0805CS-220XMBC MMIC marking code 101 capacitor 27pf marking code 10 sot23 marking ud MW-6 Y5 sot23 CGY59
Contextual Info: CGY 59 GaAs MMIC Preliminary data * Low noise preamplifier for mobile communication PCN, DECT, GSM in 2.7V to 6V systems * Biased monolithic microwave IC (MMIC)

st 9548

Abstract: p0603 CGY99 DCS1800 Q62702-G0128 C4 MMIC INFINEON PART MARKING MMIC marking CODE c4
Contextual Info: GaAs MMIC CGY 99 Preliminary Datasheet * Broadband 3-stage Power Amplifier [ 800.2400 Mhz ] * GSM, AMPS, PCN, PCS * Operating voltage range: 2.7 to 6.0 V

MMIC SOT 143 marking CODE 77

Abstract: cgy50 Q68000-A8370 SIEMENS MMIC mmic marking L mmic HL 30 MARKING SOT-143 C5 siemens rs 806
Contextual Info: CGY 50 GaAs MMIC Datasheet * Single-stage monolithic microwave IC MMICamplifier * Cascadable 50 Ω gain block * Application range: 100 MHz to 3 GHz

CGY52

Abstract: Q68000-A8615 MMIC marking code 52 23/MMIC marking code 52
Contextual Info: CGY 52 GaAs MMIC Datasheet * Two stages monolithic microwave IC MMICAmplifier * All gold metallisation * Chip fully passivated * Operating voltage range: 2.7 to 5 V

IPC-9501

Abstract: p0603 CGY98 DCS1800 Q62702-G0079 SCT595 infenion
Contextual Info: GaAs MMIC CGY 98 Datasheet * Broadband Power Amplifier [ 800.2000 Mhz ] * GSM,AMPS or PCN * Operating voltage range: 2.7 to 5.0 V * Pout = 35.0dBm at Vd=3.5V

CGY196

Abstract: ISM2400 ISM900 Q62702-G0080 IPC-9501 infineon reflow
Contextual Info: GaAs MMIC CGY 196 Datasheet * Multiband Power Amplifier [ 800.3500 Mhz ] * DECT,PHS,PWT,Bluetooth,ISM900,ISM2400,WLL * Single Voltage Supply * Operating voltage range: 2V to 6 V

IPC-9501

Abstract: IPC-4202 infineon databook CGY197 ISM2400 ISM900 Q62702-G0116 Siemens Halbleiter
Contextual Info: GaAs MMIC CGY 197 Preliminary Datasheet • • • • • • • • • • ESD: Multiband Power Amplifier [ 800.3500 Mhz ] DECT,PHS,PWT,Bluetooth,ISM900,ISM2400

IPC-9501

Abstract: SCT595 CGY196 marking D6s Q62702-G0080 SCT-598 soldering voids
Contextual Info: GaAs MMIC CGY 196 Datasheet * Broadband Power Amplifier [ 800.3500 Mhz ] * DECT,PHS,PCS,GSM,AMPS,WLAN,WLL * Single Voltage Supply * Operating voltage range: 2.0to 6 V

mmic marking L

Abstract: mmic amplifier marking code l CGY195 Siemens MMIC TS81 CGY 8 pin MMIC marking 81
Contextual Info: GaAs MMIC CGY 195 Tentative Data l l l l l RF_out / VD2 Power amplifier for DECT application, single voltage supply Operating voltage range: 2.7 to 6 V

CMY210

Abstract: CF750 upconverter cmy 210 L band upconverter
Contextual Info: GaAs Components Infineon ♦e c f i n c l o g i a ï Application Notes 8 Application Notes CGY 180 - 3 V 500 mW RF Power Amplifier Solution for DECT.81 15 GHz GaAs-FET Buffered

marking code 016 MMIC

Abstract: RS 302 440 40 mmic marking L A444 CGY40 Q68000-A4444 mmic code marking P 18 MMIC marking code 132 MMIC marking CODE c4 MMIC marking CODE 06
Contextual Info: CGY 40 GaAs MMIC Datasheet * Single-stage monolithic microwave IC MMICamplifier * Application range: 100 MHz to 3 GHz * Gain: 9 dB typ. @ 1.6 GHz * Low noise figure: 2.7 dB typ. @ 1.6 GHz

smd MARKING CODE G72

Contextual Info: GaAs MMIC CGY 93P Data Sheet • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% MW-16 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code taped Package

Contextual Info: SIEMENS CGY 93P GaAs MMIC Preliminary Data • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code taped