CGR RESISTOR Search Results

cgr0118z

Abstract: 100C
Contextual Info: CGR-0118Z Dual CATV 5MHz to 120MHz CATV Amp IC CGR-0118Z Preliminary DUAL CATV 5MHz to 120MHz CATV AMP IC RFMD Green, RoHS Compliant, and Pb-Free Product Package: SOIC 8 Product Description Features RFMD’s CGR-0118Z is a high performance 75Ω push-pull GaAs HBT

Contextual Info: CGR-0118Z CGR-0118Z Dual CATV 5MHz to 65MHz CATV Amp IC DUAL CATV 5MHz to 65MHz CATV AMP IC Package: SOIC 8 Product Description Features RFMD’s CGR-0118Z is a high performance 75 push-pull InGaP HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias netwrok provides stable current over temperature

CGR0118Z

Contextual Info: CGR-0118Z CGR-0118Z Dual CATV 5MHz to 65MHz CATV Amp IC DUAL CATV 5MHz to 65MHz CATV AMP IC Package: SOIC 8 Product Description Features RFMD’s CGR-0118Z is a high performance 75Ω push-pull InGaP HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias netwrok provides stable current over temperature

CGR-0118Z

Abstract: rf micro device catv line amplifier
Contextual Info: CGR-0118Z Dual CATV 5 MHz to 65 MHz CATV Amp IC CGR-0118Z Preliminary DUAL CATV 5 MHz to 65 MHz CATV AMP IC Package: SOIC 8 Product Description Features RFMD’s CGR-0118Z is a high performance 75 Ω push-pull InGaP HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias netwrok provides stable current over temperature

cgr01

Abstract: XFM-0201-1WH XFM-0201-WH
Contextual Info: CGR-0118Z CGR-0118Z Dual CATV 5MHz to 65MHz CATV Amp IC DUAL CATV 5MHz to 65MHz CATV AMP IC Package: SOIC 8 Product Description Features RFMD’s CGR-0118Z is a high performance 75 push-pull InGaP HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias netwrok provides stable current over temperature

Contextual Info: TYPE CGR Computer Grade Aluminum Electrolytic Capacitor FEATURES: m O 33 t> L / Z t> n •Very Low ESR • High Reliability • Very High Ripple Current • -55°C to +105°C Operation The CGR capacitor manufactured by Aero M is specifically designed as a very low ESR, high

MALLORY CAPACITORS cgs series

Abstract: CG SERIES MALLORY CAPACITOR 450 VDC MALLORY CAPACITOR MALLORY CAPACITORS MALLORY CAPACITOR CATALOG MALLORY CAPACITORS cgs Mallory Type CG MALLORY CAPACITORS cgr MALLORY TYPE CGS Mallory Capacitor cg
Contextual Info: Types CGS, CG, CGR, CGO, CGH, HES Part Number Information NACC Catalog Number: CGS 184 U ̄ 010 X3L t P 3 H TYPE: Identifies the basic type CGS, CG, CGR, CGO, CGH, HES CAPACITANCE: Expressed in microfarads The first two digits are significant figures The third digit is the number of zeros

CGR322U

Contextual Info: TYPE CGR Computer Grade Aluminum Electrolytic Capacitor FEATURES: • Very Low ESR • High Reliability •Very High Ripple Current • -55°C to +105°C Operation PERFORMANCE CHARACTERISTICS: • VOLTAGE: 6.3 to 250 VDC • OPERATING TEMPERATURE: -55°C to + 1 05°C

Contextual Info: iniXYS MWI 35-12 A! IGBT Modules Sixpack = 45 A = 1200 V VCE 8atlw.= 2.2V v ces Symbol Conditions VCES Tj = 25°C to 150°C v CGR Tj = 25°C to 150°C; Rqe = 20 k£2 vGES v GEM Continuous Transient *C25 ^CSO ' cm *sc (SCSOA Maximum Ratings V V ±20 ±30 V

Contextual Info: IGBT Modules Sixpack ^C25 VCES VCE sat typ. 90 A 1200 V 2.2 V Short Circuit SOA Capability Square RBSOA E 72873 Preliminary data Symbol Conditions Maximum Ratings v CES v CGR T j = 25°C to 150°C 1200 V T,J = 2 5 ° C to 150°C;} FL = 2 0 k ft 1200 V VeES

T 3512 H diode

Abstract: diode T 3512 H A5140 ds 35-12 e
Contextual Info: IGBT Modules Sixpack ^C25 V CES V CE sat typ. 45 A 1200 V 2.2 V Short Circuit SOA Capability Square RBSOA E 72873 Preliminary data Symbol Conditions v CES v CGR Tj = 25°C to 150°C T,J = 2 5 °C to 150°C;} FL = 2 0 kft VeES v GEM Continuous ±20 V Transient

LU250

Contextual Info: □IXYS MWI 25-12 A7 Advanced Technical Information IGBT Modules Sixpack IC25 v ces = 50 A = 1200 V V C E sat typ. = 2 . 2 V Symbol Conditions V CES Tj = 25°C to 150°C Tj = 25°C to 150°C; RGE = 20 k£i V CGR Maximum Ratings 1200 1200 V V ±20 ±30 V V

Contextual Info: □IXYS MWI 50-12 A7 Advanced Technical Information IGBT Modules Sixpack IC25 v ces = 85 A = 1200 V V C E s a t ty p . = 2 . 2 V Features Symbol Conditions Maximum Ratings V CES Tj = 25°C to 150°C 1200 V V CGR Tj = 25°C to 150°C; RGE = 20 k£i 1200 V

T 3512 H diode

Abstract: diode T 3512 H ds 35-12 e 35-12A7
Contextual Info: □IXYS MWI 35-12 A7 Advanced Technical Information IGBT Modules Sixpack IC25 v ces = 62 A = 1200 V V C E s a t ty p . = 2 . 2 V Symbol Conditions Maximum Ratings V CES Tj = 25°C to 150°C 1200 V V CGR Tj = 25°C to 150°C; RGE = 20 k£i 1200 V V GES Continuous

Diode RJ 4B

Contextual Info: B iX Y S MW! 50-12 A IGBT Modules iC25 S ix p a c k VCES ces CE sat typ. S ym bol C o n d itio n s V CES V CGR T j = 25°C to 150°C 1200 V T j = 25°C to 150°C; RGE = 20 kQ 1200 V M axim um R atings v"GES Continuous ±20 V VGEH Transient ±30 V 'c * Tc = 25°C

Contextual Info: MII 300-12 A4 IGBT Modules ^C 25 Short Circuit SOA Capability VCES V C E sa t typ. MID 300-12 A4 330 A 1200 V 2.2 V Square RBSOA MID MDI P relim inary data E 72873 S ym bo l C o n d itio n s M axim um R atings V qeS T j = 25°C to 150°C 1200 V V CGR T j = 25°C to 150°C ; RGE = 20 k il

MA 7824

Abstract: datasheet ic 7824 by national semiconductor st 7815 1000U 100N 150N 220N U4050B
Contextual Info: U4050B Speech Circuit with Line-Powered Loudspeaker Amplifier Description The electronic speech circuit U4050B is a linear integrated circuit for use in telephone sets. It replaces the hybrid transformer, side tone equivalent and ear protection rectifiers.

ic 7824 by national semiconductor

Abstract: clim U4050B st 7815 C600 S028 U4050B-AFL U4050B-AFLG3 s14 package RthJA CK 7815
Contextual Info: U4050B Speech Circuit with Line-Powered Loudspeaker Amplifier Description The electronic speech circuit U4050B is a linear integrated circuit for use in telephone sets. It replaces the hybrid transformer, sidetone equivalent and ear protection rectifiers.

1000U

Abstract: 100N 150N 220N U4050B s14 package RthJA CgR resistor
Contextual Info: U4050B TELEFUNKEN Semiconductors Speech Circuit with Line-Powered Loudspeaker Amplifier Description The electronic speech circuit U4050B is a linear integrated circuit for use in telephone sets. It replaces the hybrid transformer, side tone equivalent and ear protection rectifiers.

MA 7824

Abstract: datasheet ic 7815 data sheet ic 7818 "Microphone Preamplifier" 1.5V transistor 7824 ic data book ic 7815 datasheet "Microphone Preamplifier" 1.5V 7824 vc transistor 7815 vm200
Contextual Info: U4050B Speech Circuit with Line-Powered Loudspeaker Amplifier Description The electronic speech circuit U4050B is a linear integrated circuit for use in telephone sets. It replaces the hybrid transformer, side tone equivalent and ear protection rectifiers.

Contextual Info: HT16525 5x8 Dot Character VFD Controller & Driver Feature Applications • Logic voltage : 2.7V~5.5V • Consumer products panel function control • High voltage: 60V max. • 3-line serial interface • Industrial measuring instrument panel function control

ST20P18

Abstract: ST2016 Sitronix lcd driver working of crystal 8mHZ oscillator Sitronix Technology digital watch lcd circuit
Contextual Info: ST ST20P18 16K 8-bit Single Chip Microcontroller Notice: Sitronix Technology Corp. reserves the right to change the contents in this document without prior notice. This is not a final specification. Some parameters are subject to change. 1. FEATURES - One option bit is selectable to reset or not in WAI1 and

MALLORY CAPACITORS type HES

Abstract: MALLORY CAPACITORS cgs series MIL-C-39018
Contextual Info: Selector Guide & Performance Specifications Computer Grade Capacitors • Type r ; i T e m p e ra tu re R ange CGS/ CGH -40°C to +85°C | Range VDC j Hours r Low > ■ Life Test @°C| Cap j 10 to 500 1000 +85 Good 10 to 450 2000 +85 Best HES -40°C to +105°C 350 to 400

D947F

Abstract: 2SD947F transistor d 947f TRANSISTOR 2sd947f
Contextual Info: 2SB1183 / 2SB1239 / 2SB786F 2SD1759 / 2SD1861 / 2SD947F Transistors I Power Transistor —40V, —2A 2 S B 1 183 / 2S B 12 39 / 2S B 78 6F •F e a tu re s 1 ) Darlington connection for high D C current gain. 2 } Built-in 4 k Q resistor between b a se a n d emitter.