220N Search Results

FSLU TOKO

Contextual Info: 'TYPE 52 FSLU Series TYPE FSLU2520 Inductance Range: 10nH ~ 220nH Temperature Range: -4 0 CC +85°C 1.4 Inductance Marking i I r Tolerance: ±0.2 Unit: mm Features • Typical max Q: 40 ~ 50 • Proprietary wire-wound structure with welded terminations offers high reliability

Contextual Info: IECQ-CECC and MIL grade ranges IECQ-CECC and MIL grade ranges Maximum capacitance values. 1812 2220 2225 33nF 100nF 150nF 220nF X7R 100nF 330nF 1.0µF 1.5µF 1.5µF 3.3µF 5.6µF 6.8µF C0G/NP0 1.0nF 4.7nF 15nF 22nF 27nF 68nF 100nF 150nF X7R 56nF 220nF 820nF

Contextual Info: S02A and S05 Space ranges S02A and S05 Space ranges Capacitance values. 1pF - 22nF 10pF - 33nF 220pF - 100nF 470pF - 150nF 560pF - 220nF 330pF - 100nF 100pF - 330nF 680pF - 1.0µF 1.0nF - 1.5µF 25V C0G/NP0 390pF - 1.0nF X7R 1pF - 4.7nF 1pF - 15nF 2225 1pF - 6.8nF

Contextual Info: 2 . Schem atic: 1. Dimensions: o- O - A 7.30 Max 3. Electrical Specs:@25°C OCL: 220nH± 15% @1MHz 0.1V x o Isat: 20.8Adc Based on 15% drop in OCL Irms: 15.3A (Based on 40'C Temp Rise) DCR: 1.88 mOhms Max O •<" rO B 6.48 Max 0.25A 2x1.65 2.54 1. Solderability: Leads shall meet MIL-STD-202G,

PA2982

Abstract: P712A
Contextual Info: Pulse Jack SMT Power Inductors Power Beads - PA2982.XXXHL Series Electronics Current Rating: Over 81Apk Inductance Range: 100nH to 220nH Height: 5.0 and 5.1 mm Max Footprint: 11.0mm x 8.0mm Max Halogen Free Inductance1 @ 0ADC nH +/- 10% 100 120 150 190 220

Contextual Info: MECHANICAL DIMENSIONS Unit:mm SMD POWER CHOKE CSS0316P ELECTRICAL SPECIFICATIONS: PART Number. CSS0316P-1R5N-LFR CSS0316P-2R2N-LFR CSS0316P-3R3N-LFR CSS0316P-4R7N-LFR CSS0316P-6R8N-LFR CSS0316P-100N-LFR CSS0316P-150N-LFR CSS0316P-220N-LFR CSS0316P-330N-LFR

Contextual Info: Multi Layer Ceramic Capacitor MLCC 1. Model : CL31F224MBCNNNC 2. Description Part no. Size (inch(mm) Thickness (mm) Temperature charateristics Capacitance value(uF) Capacitance tolerance(%) Voltage (V) CL31F224MBCNNNC 1206/3216 0.85mm Y5V 220nF ± 20 %

Contextual Info: Multi Layer Ceramic Capacitor MLCC 1. Model : CL21B224KAFNNWG 2. Description Part no. Size (inch(mm) Thickness (mm) Temperature charateristics Capacitance value(uF) Capacitance tolerance(%) Voltage (V) CL21B224KAFNNWG 0805/2012 1.25mm X7R 220nF ± 10 %

Contextual Info: Multi Layer Ceramic Capacitor MLCC 1. Model : CL31B224KACNNWC 2. Description Part no. Size (inch(mm) Thickness (mm) Temperature charateristics Capacitance value(uF) Capacitance tolerance(%) Voltage (V) CL31B224KACNNWC 1206/3216 0.85mm X7R 220nF ± 10 %

Contextual Info: Multi Layer Ceramic Capacitor MLCC 1. Model : CL32B224KCHNNWE 2. Description Part no. Size (inch(mm) Thickness (mm) Temperature charateristics Capacitance value(uF) Capacitance tolerance(%) Voltage (V) CL32B224KCHNNWE 1210/3225 1.6mm X7R 220nF ± 10 % 100

Contextual Info: Multi Layer Ceramic Capacitor MLCC 1. Model : CL21B224KOCNNNC 2. Description Part no. Size (inch(mm) Thickness (mm) Temperature charateristics Capacitance value(uF) Capacitance tolerance(%) Voltage (V) CL21B224KOCNNNC 0805/2012 0.85mm X7R 220nF ± 10 %

Contextual Info: Multi Layer Ceramic Capacitor MLCC 1. Model : CL21F224ZOANNND 2. Description Part no. Size (inch(mm) Thickness (mm) Temperature charateristics Capacitance value(uF) Capacitance tolerance(%) Voltage (V) CL21F224ZOANNND 0805/2012 0.65mm Y5V 220nF 80 % / -20 %

Contextual Info: Multi Layer Ceramic Capacitor MLCC 1. Model : CL21B224KAFNNNS 2. Description Part no. Size (inch(mm) Thickness (mm) Temperature charateristics Capacitance value(uF) Capacitance tolerance(%) Voltage (V) CL21B224KAFNNNS 0805/2012 1.25mm X7R 220nF ± 10 %

Contextual Info: Multi Layer Ceramic Capacitor MLCC 1. Model : CL31B224KBFNFNE 2. Description Part no. Size (inch(mm) Thickness (mm) Temperature charateristics Capacitance value(uF) Capacitance tolerance(%) Voltage (V) CL31B224KBFNFNE 1206/3216 1.25mm X7R 220nF ± 10 %

Contextual Info: BYS459-1500S, BYS459F-1500S, BYS459B-1500S Vishay Semiconductors New Product formerly General Semiconductor High Voltage Damper Diodes Reverse Voltage 1500V Forward Current 10A Reverse Recovery Time 220ns ITO-220AC BYS459F 0.188 (4.77) 0.172 (4.36) 0.405 (10.27)

CL31B224KB

Contextual Info: Multi Layer Ceramic Capacitor MLCC 1. Model : CL31B224KBFNNNE 2. Description Part no. Size (inch(mm) Thickness (mm) Temperature charateristics Capacitance value(uF) Capacitance tolerance(%) Voltage (V) CL31B224KBFNNNE 1206/3216 1.25mm X7R 220nF ± 10 %

NC-73

Abstract: 4300M3 SILVER TELECOM PEB2466 2.2UF 51k1 600R AN2410 LSC microcontroller 1V20
Contextual Info: +5V +5V 2.2uF 100nF 100nF 1 to 10uF + + 100nF 5 5 220nF 1 75 36k GNDD 1 0R Microcontroller Interface Zb 6 DMB 33R, 2W PCM Interface DMA 270k2 Phone Socket V REF V DDD GND V DDREF V CC 5 10uF + 1 TIP TISP 4300M3 Silver Telecom Ag2410 51k1 47pF1 +5V 76 V IN

CTR-21

Abstract: CTR21 680r AG2130 150nf 820pF 220R 115nF 310nF 150R
Contextual Info: AG2130 PROGRAMMABLE TERMINATION IMPEDANCES 2-wire Impedance ZT ZC Network Balance Impedance Zb1 Zb2 Zb3 C3 Notes 1 600Ω 300Ω 47K 600Ω 100K 0R - - USA Short Line, Far East, Middle East 2 CTR21 750R// 220nF 68K// 680pF CTR21 220K// 680p 5.1K - -

datasheet of transistor sl 100

Abstract: 1N4004 BZT03C82 T8533
Contextual Info: Interfacing Ag1460 to Legerity T8533 +5V 100uF 10R + + 100nF 220uF +5V A GND A To other lines D1 TIP +5V PWR Ag1460 VFXI V OUT DXO D2 DRO 100nF TIP DRI RING RING 100nF D4 VFRON VFROP V IN FS BCLK PGND CAP 220nF D1 - D4 = 1N4004 or equivalent D5 = BZT03C82 only one needed per linecard

74HC244

Abstract: 74HC374 MSM7570-01 AN1160 CAP 220UF CAP 220uF/10V ZL Rubycon 1N4004 BZT03C82 MSM7570
Contextual Info: Silver Ag1160 Application Sept 2001 TELECOM +5V 100uF + 10Ω + C1 + 100nF VDD +5VA GNDA VCLAMP TIP RING RING SG VIN VFRO PWI AOUT- VOUT AIN1- D4 OKI OKI OKI GSX1 PGND CAP GNDPWR 220nF +5V MSM7570 Ag1160 TIP D3 +5VPWR D2 D5 100nF 10uF 10uF 100nF D1 + F/R

220NF

Abstract: 100UF 1N4007 470nF C10B ferrite C5A data sheet 1N4007 diode diode 1n4007 datasheets diode 1n5818 STPS130A
Contextual Info: D3a 1N4007 19 C4a 470nF C3a 100µF L2a C6a C5a 100µF 470nF 20 36 EXTM-A VCTRL-A 22 35 C9a 10µF EXTM-B VCTRL-B Vup-A VoTX-A 25 Ferrite Bead D4a 1N5818 D1a STPS130A L3a 11 LX-A 21 ISEL-A 34 ISEL-B 22µH Rsel-A 11KOhm C1 100µF C2 100nF C13a 10nF C10a 220nF

ixgh40n30

Contextual Info: □ IXYS VCES HiPerFAST IGBT IXGH40N30/S IXGH40N30A/S IXGH40N30B/S ^C25 600 V 60 A 600 V 60 A 600 V 60 A V CE sat 1.8 V 2.1 V 2.4 V t. 220ns 120ns 75 ns Preliminary data TO-247 SMD* Maximum Ratings Symbol Test Conditions V CES Td = 25°C to 150°C 300

tp181

Abstract: toshiba hdd schematic board cbf 493 TP223 mt2 tEac CBF 423 diode ba39 toshiba 1,8 hdd schematic board TP182 keyboard and touchpad schematic
Contextual Info: 4-148 KBC3_SUSPWR 1% R11 10K 1% R18 6.65K P1.5V_AUX VDC C20 10nF TP192 TP193 R7 TP? 2.5V AL C6 330uF 7 6 5 TP194 Q57 SI4816DY IHLP-2525CZ-01 L1 4.7uH 25V C14 4700nF 3 8 2 D1 4 G2 1 G1 TP217 TP216 R1 1K TP196 25V C15 220nF TP191 5% TP190 R17 6.8K 1% R15 330K

montevina

Contextual Info: R410+ SENS XIAN-MVI NP-R410+xx/xx SERVICE Manual 제품특징 SAMSUNG R410-Plus 1. 간단하고 편리한 Note PC -. 새로운Intel Montevina Platform기술. -. Internal 1.3M 카메라 -. 14.1'' WXGA+ 220nit Glare 액정화면 -. Windows Vista Home/Premium