CGH0912 Search Results

CGH0912 Datasheets (1)

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Cree/Wolfspeed

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
CGH09120F		Cree/Wolfspeed	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF MOSFET HEMT 28V 440095	Original	PDF	1.59MB

CGH0912 Price and Stock

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MACOM


MACOM CGH09120F Trans RF MOSFET N-CH 120V 12A 3-Pin Case 440095
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Richardson RFPD	CGH09120F		40		40	1 - 10 - 100 $321.42 1000 $321.42 10000 $321.42	Buy Now

CGH0912 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
cgh09120f Abstract: ATC 600F lk 3058 3019 Transistor LTE AMPLIFIER Contextual Info: CGH09120F 120 W, UHF - 2.5 GHz, GaN HEMT for WCDMA, LTE, MC-GSM Cree’s CGH09120F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH09120F ideal for MC-GSM, WCDMA and LTE	Original	cgh09120f cgh0912 cgh09120f-tb atc 600f +3lk 3058 3019 transistor lte amplifier	PDF
ATC600S Abstract: RO4003 CAP 0805 ATC 600F ATC 600F CGH0912 CGH09120F CGH09120F-TB JESD22 68-pF j 182 Contextual Info: CGH09120F 120 W, UHF - 2.5 GHz, GaN HEMT for WCDMA, LTE, MC-GSM Cree’s CGH09120F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH09120F ideal for MC-GSM, WCDMA and LTE	Original	cgh09120f cgh0912 atc600s ro4003 +6cap 0805 atc 600f atc 600f cgh09120f-tb jesd22 68-pf j 182	PDF
cgh09120f Abstract: 3019 Transistor Ro4003 Contextual Info: CGH09120F 120 W, UHF - 2.5 GHz, GaN HEMT for WCDMA, LTE, MC-GSM Cree’s CGH09120F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH09120F ideal for MC-GSM, WCDMA and LTE	Original	cgh09120f cgh0912 cgh09120f-tb 3019 transistor +1ro4003	PDF
Contextual Info: CGH09120F 120 W, UHF - 2.5 GHz, GaN HEMT for WCDMA, LTE, MC-GSM Cree’s CGH09120F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH09120F ideal for MC-GSM, WCDMA and LTE	Original	cgh09120f cgh0912	PDF
ATC600S Abstract: 8029 l2 circuit CAP 0805 ATC 600F 8029 l2 CGH0912 CGH09120F CGH09120F-TB RO4003 amplifier TRANSISTOR 12 GHZ Contextual Info: PRELIMINARY CGH09120F 120 W, UHF - 2.5 GHz, GaN HEMT for WCDMA, LTE, MC-GSM Cree’s CGH09120F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH09120F ideal for MC-GSM, WCDMA and LTE	Original	cgh09120f cgh0912 atc600s 8029 l2 circuit +5cap 0805 atc 600f 8029 l2 cgh09120f-tb ro4003 amplifier transistor 12 ghz	PDF
CGH09120F Abstract: CGH25120F CDPA21480 CGH27060F ofdm predistortion CGH55030F 440117 CGH21120F CGH21240F CGH27015F Contextual Info: Gallium Nitride GaN HEMT Transistors for BTS Applications Cree’s Doherty CDPA21480, performance. CGH21240F demonstration provides amplifier innovative The amplifier devices with uses digital two CDPA21480 Spectrum at 2.11, 2.14 & 2.17 GHz PAVE = 49 dBm, 2-Carrier WCDMA, PAR = 7.5 dB with CFR	Original	cdpa21480 cgh21240f cgh09120f cgh25120f +6cgh27060f ofdm predistortion cgh55030f 440117 cgh21120f cgh27015f	PDF