CFES Search Results

sma5106

Abstract: SLA5006
Contextual Info: IMOSFET Arrays Absolute Maximum Ratings • Type Mo. sfa#}/' C as fV A) (W) <mJ) fVGS x tov> (0 > Cfes m) Equivalent circUt No (pF) N-Channel 100 5 35 30 03 350 A S LA5002 N-Channe! 100 5 35 30 0.3 350 B SLA5003 N-Channel 200 5 35 60 0.9 260 B S LA 5004

irf1740

Abstract: IRL244 IRF1740A ks 0550 IRL244A IRFZ34A SSH6N80A IRF634A irfs750 IRFS640
Contextual Info: PRODUCT GUIDE D/I- PAK N-Channel Standard FET Part Number SSR3055A BV DSS (V) (A) (0» cfes (pF) I D R DSM Q Po (nC) fC/W) (W) Page 8 0.150 280 17 7.04 18 Vol.1 IRFR014A 8.2 0.140 280 17 7.04 18 Vol.1 IRFR024A 15 0.070 600 32 4.14 30 Vol.1 IRFR034A 23 0.040

Contextual Info: " K BH Electronics INDUCTORS Toroid Inductors for Switching Power Supplies ELECTRICAL CHARACTERISTICS AT 25° C Current Range, 1 Amp to 50 Amps Cast Effective Cfesign RATED DC CURRENT AMPS BH PART NUMBER Wide F&rge of Inductance MINIMUM INDUCTANCE AT RATED DC (|iH)

1SS139

Abstract: 1ss140 1SS14
Contextual Info: — K /D iod es 1SS139/1SS140/1SS141 1SS13 9 /1 SS14 0 /1 SS141 Silicon Epitaxial Planar Low-Leakage Switching Diodes • \ f ; i E l/D im e n s io n s Unit : mm 1) aiSIM T-cfeSo 2) H ' y T . i i i k T & Z (JEDEC : DO- 35)o • Features 1) High reliability.

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

2000 watts audio amplifier schematics

Abstract: P channel MOSFET 10A schematic OM9323SC OM9324SC OM9325SC OM9326SC CFES
Contextual Info: T M3E D 1= 70 ^0 73 GGDQT^Ö Ö IOMNI OM9323SC OM9325SC OM9324SC OM9326SC " T S 2 - - \3 > - Z S POWER MOSFETS IN 5 PIN HERMETIC SIP PACKAGE OMNIREL CORP Complementary N-Channel And P-Channel Power MOSFETs In 5 Pin Hermetic SIP Package FEATURES • LOW Rps on

BUK104-50L

Abstract: BUK104-50S BUK104-50US
Contextual Info: PHILIPS bSE INTERNATIONAL D • 711002b D 0 b 3 f l43 Monolithic temperature and overloadprotected logic level power MOSFET in a 5 pin plastic envelope, intended as a general purpose switch for automotive systems and other applications. APPLICATIONS General controller for driving

Contextual Info: r a iO M O G O M V Military ì860tm 64-Bit M icro p ro cesso r • Compatible with Industry Standards — ANSI/IEEE Standard 754-1985 for Binary Floating-Point Arithmetic — 386 /j 486TM Microprocessor Data Formats and Page Table Entries ■ Parallel Architecture that Supports Up

Contextual Info: 3.3 VOLT CMOS SUPERSYNC FIFO 16,384x9, 32,768x9 IDT72V261 IDT72V271 In teg ra ted D e v ic e T e c h n o lo g y , l i e . FEATURES: • 3.3 Volt operation saves 60 percent of power compared to the functionally compatible 5 Volt IDT72261/72271 family 16,384 x 9-bit storage capacity IDT72V261

24c16 eeprom resetting only circuit diagram and d

Abstract: a180, transformer atmel 24c16 SAA7322 intel core i3 MOTHERBOARD CIRCUIT diagram mba mini projects SB82371SB TriMedia TM-1000 ATMEL 220 24C16 trimedia tm1300
Contextual Info: INTEGRATED CIRCUITS TM-1300 Media Processor Product Specification Supersedes data of 2000 May 30 File under INTEGRATED CIRCUITS, TR1 2000 Sep 30 Terms and Conditions TERMS AND CONDITIONS Philips Semiconductors and Philips Electronics North America Corporation reserve the right to make changes,

information applikation mikroelektronik

Abstract: information applikation Mikroelektronik Information Applikation applikation heft mikroelektronik applikation VEB mikroelektronik "Mikroelektronik" Heft mikroelektronik DDR radio fernsehen elektronik "information applikation"
Contextual Info: m o lk ^ o e le l-c ts n a r iik c Information Applikation 31/2 DIGIT CMOS Analog-DigitalWandler G O Q . i m f l k i n i o e l B l H c f a p a r T B Inform ation Applikation Heft C 47: 7 13 6 A / D - W a n d l e r I 1 * *• vm b u w t L frrinkfu r f c / o d f

MT 1198 AE

Abstract: 4bob M5Y4
Contextual Info: I X Y S IDE CORP D | HbflbÈSb 00003ÔT fl ~ r- 3 s r ^ J IXYS ADVANCED TECHNICAL DATA SHEET* „TM MOSBLOC DATA SHEET NO. 41006C IGBT MODULE IXGQ75N60Y4 MAXIMUM RATINGS Te = 25 °C unless otherwise Indicated Conditions Rating Collector-Emitter Voltage Symbol

BT diode

Contextual Info: 2MBI400L-060 IG B T 3 . — JU IG B T M ODULE : Features High Speed Sw itching • W E S E tb V oltage Drive : A p p licatio n s Inverter for M otor D rive • A C , D C "tf — i $ T > " ? AC-DC Servo Drive Amplifier U n in terru p tib le P o w e r S u p p ly

Contextual Info: HM51W17800B Series 2,097,152-word x 8-bit Dynamic Random Access Memory HITACHI ADE-203-275C Z Rev. 3.0 Jul. 5, 1996 Description The Hitachi HM51W17800B is a CMOS dynamic RAM organized 2,097,152-word x 8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM51W17800B offers

APT45G100BN

Abstract: i287
Contextual Info: ADVANCED POUER TECHNOLOGY blE D • GSST'lD'l GOGGfl'î'î flb? ■ AVP ADVANCED PO W ER Te c h n o l o g y APT45G100BN P O W E R M O S 1000V 45A IV IG B T N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS

Irf7314

Contextual Info: P D - 9.1436B International l R Rectifier IRF7314 PRELIMINARY HEXFET Power MOSFET Generation V T echnology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Fully Avalanche Rated V dss = ^D S o n = -20V 0.058Î2 Description Fifth Generation HEXFETs from International Rectifier

Contextual Info: PD- 9.1577A International Rectifier IGR IRG4PH40KD PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc=10MS, V c c = 720V , T j = 125°C,

ps2 CIRCUIT diagram

Abstract: TCA 965 BP CMT58 CMT57 Hitachi DSA002730 k 1413
Contextual Info: Hitachi 16-Bit Single-Chip Microcomputer H8S/2194 Series, H8S/2194C Series, H8S/2194 F-ZTAT , H8S/2194C F-ZTAT™ H8S/2194, HD6432194, HD64F2194, H8S/2193, HD6432193 H8S/2192, HD6432192 H8S/2191, HD6432191 H8S/2194C, HD6432194C, HD64F2194C, H8S/2194B, HD6432194B

ps2 CIRCUIT diagram

Abstract: hd102 167 1 CMT54 HD12D TCA 785 IC ta222 TA023 CMT57 Hitachi DSA002714 HD100
Contextual Info: Hitachi Single-Chip Microcomputer H8S/2194 Series, H8S/2194F-ZTAT H8S/2194, HD6432194, HD64F2194, H8S/2193, HD6432193 H8S/2192, HD6432192 H8S/2191, HD6432191 Hardware Manual ADE-602-160 Ver 0.1 11/20/98 Hitachi, Ltd. Notice When using this document, keep the following in mind:

PQ-32/9060

Contextual Info: PCI9080 l20 bmpatibleFCI BusMast# I/O Activator Chip Features Flexible l20 Connection to the PCI Bus • PC I V ersion 2 1 com p l a n t BusM a s te r interfaae chip fo r ad a p te rs a n d an b ed d e d system s F o r a d d -in c a rd a n d a n b e d d e d sy stan d esig n ers a n d in te g ra to rs alike, th e m is -

Contextual Info: N AMER PHILIPS/DISCRETE bRE D • bbS3R31 0D3QSbS 3fi0 * A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

Contextual Info: |U |IC R O N lEG X 1 MEG DRAM MODULE MT6D118 18 DRAM MODULE X 18 DRAM FAST-PAGE-MODE FEATURES PIN ASSIGNMENT Top View • Industry-standard pinout in a 72-pin single-in-line package • High-performance CM OS silicon-gate process • Single 5V ±10% power supply

BH Re transistor

Abstract: MMT3823 BH Rf transistor
Contextual Info: M OT OR OL A SC 6367255 34 {DIODES/OPTO} MOTOROLA SC MICRO-T continued Lj3b7255 0 0 3 0 2 2 5 4 34C <D I O D E S / O P T O ) 38225 7-" 31-O MMT3823 — N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR • depletion mode (Type A) Field-Effect Transistor designed for

Contextual Info: User’s M anual, V1.1, Apr. 2002 TC11IB System Units 3 2 -B i t S i n g l e - C h i p M ic r o co n t ro l l e r M i c r o c o n t ro l le r s N e v e r s t o p t h i n k i n g . Edition 2002-04 Published by Infineon Technologies AG, St.-Martin-Strasse 53,