CERTIFICATE OF COMPLIANCE JANTX Search Results

JANTX1N5719

Abstract: 01038-1N5719TX C68001 1N5719 equivalent MA1N5719HX 1N4456 96341 HP JANTX1N5719 MA1N5719 C-68001
Contextual Info: REVISIONS LTR DESCRIPTION DATE Page 3, paragraph 3.5 marking. Page 9, added vendor part number reference to paragraph 6.5. Update lead finish, manufacturer information, editorial and format changes. A B APPROVED 8 April 2002 Thomas M. Hess 18 August 2008 Thomas M. Hess

ASTM-D3487

Abstract: 1N5597 1N5600 D1868 250-28UNF-2B 037Z3 1N5603 375-24UNF-2A
Contextual Info: REVISIONS LTR DESCRIPTION DATE APPROVED MIL-PRF-19500/404 has been cancelled. This drawing may be used as a substitute. Selected item drawing Prepared in accordance with ASME Y14.100 REV PAGE REV PAGE REV STATUS OF PAGES REV PAGES PMIC N/A 1 2 3 4 PREPARED BY

04029-01TX

Abstract: QML-19500 2N5927 NPN power switching transistor 32953 power tech 32953 ASME-14
Contextual Info: REVISIONS LTR DESCRIPTION DATE APPROVED MIL-S-19500/440 has been cancelled. This drawing may be used as a substitute. Prepared in accordance with ASME-14.100 Selected item drawing REV PAGE REV PAGE REV STATUS OF PAGES REV PAGES PMIC N/A Original date of drawing

90024-03TX

Abstract: pic646
Contextual Info: REVISIONS LTR DESCRIPTION DATE APPROVED A Revise drawing, update sources. 7 August 2000 Monica Poelking B Supplier/address/CAGE change; reformat document 23 May 2002 Thomas M. Hess C Correct figure 1 - header thickness, supplier name, editorial changes throughout - RK

Contextual Info: h a r r is S E M I C O N D U C T O R FSF9150D, FSF9150R 7 Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs June 1997 Features Package • 22A, -100V, rDS ON = 0.140£1 TO-254AA • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event

power tech 32953

Abstract: 2N5926 ASME-14 2N5926 JAN 2N5926 JANTX certificate of compliance jantx
Contextual Info: REVISIONS LTR DESCRIPTION DATE APPROVED MIL-S-19500/447 has been cancelled. This drawing may be used as a substitute. Prepared in accordance with ASME-14.100 Selected item drawing REV PAGE REV PAGE REV STATUS OF PAGES REV PAGES PMIC N/A 1 2 4 PREPARED BY Roger Kissel

Contextual Info: SUPPLIER REQUIREMENTS FOR QUALITY, DESIGN & MANUFACTURING 1.0 PURPOSE The purpose of this document is to define the requirements of Anaren Microwave, Anaren Ceramics and MS Kennedy collectively Anaren regarding the quality as well as the design and manufacture of purchased material. This requirement is not meant to discourage suppliers from

Contextual Info: FSTYC9055D, FSTYC9055R Data Sheet Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

Contextual Info: FSL430D, FSL430R 2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 2A, 500V, ros ON = 2.50£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space

Contextual Info: FSL234D, FSL234R 4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 4A, 250V, ros ON = 0-610£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space

1E14

Abstract: 2E12 FSF9250D FSF9250R
Contextual Info: S E M I C O N D U C T O R FSF9250D, FSF9250R Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs June 1997 Features Package • 15A, -200V, rDS ON = 0.290Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects

Contextual Info: FSGL230R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both

2E12

Abstract: FSGL033D1 FSGL033R3 FSGL033R4 Rad Hard in Fairchild for MOSFET
Contextual Info: FSGL033R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both

2E12

Abstract: FSYC9160D FSYC9160D1 FSYC9160D3 FSYC9160R FSYC9160R1 Rad hard MOSFETS in Harris
Contextual Info: FSYC9160D, FSYC9160R Semiconductor Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs July 1998 Features Description • 47A, -100V, rDS ON = 0.053Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

Contextual Info: FSGYE230R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both

Contextual Info: FSGYE033R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both

Contextual Info: FSYC260D, FSYC260R H A R R IS X S em iconductor Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs July 1998 Features Description • 46A, 200V, Tqs ^o N = 0.050£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

Contextual Info: S FSYA250D, FSYA250R Semiconductor y 27A, 200V, 0.100 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description . 27A, 200V, rDS 0 N = 0.100£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

Contextual Info: FSS230D, FSS230R S em iconductor 8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 8A, 200V, rQs^oN = 0.440£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

Contextual Info: FSGYC260R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both

2E12

Abstract: FSF9150D FSF9150R
Contextual Info: S E M I C O N D U C T O R FSF9150D, FSF9150R Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs June 1997 Features Package • 22A, -100V, rDS ON = 0.140Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects

2N6138

Abstract: 2N6116 JANTX2N6118 JANTX2N6137 JANTX2N6117 JANTX2N6116 037z3-01039 2N6118 JAN2N6116 2N6117
Contextual Info: REVISIONS LTR DESCRIPTION DATE Update lead finish paragraph to clarify prohibition of pure tin, update format A APPROVED 16 August 2007 Thomas M. Hess Devices on this drawing may be used as a substitute for MIL-S-19500/493 which has been inactivated for new design.

2E12

Abstract: FSL9130D FSL9130D1 FSL9130D3 FSL9130R FSL9130R1
Contextual Info: FSL9130D, FSL9130R 5A, -100V, 0.680 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 5A, -100V, rDS ON = 0.680Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

2E12

Abstract: FSL130D FSL130D1 FSL130D3 FSL130R FSL130R1 FSL130R3
Contextual Info: FSL130D, FSL130R 8A, 100V, 0.230 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 8A, 100V, rDS ON = 0.230Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event