CED3 Search Results

NS51

Contextual Info: CED3060/CEU3060 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 75A , RDS ON = 6.6mΩ @VGS = 10V. RDS(ON) = 9.5mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.

Contextual Info: CED3423/CEU3423 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -18A, RDS ON = 45mΩ @VGS = -10V. RDS(ON) = 80mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.

Contextual Info: CED3423/CEU3423 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -18A, RDS ON = 45mΩ @VGS = -10V. RDS(ON) = 80mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.

Contextual Info: CED3120/CEU3120 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 36A , RDS ON = 15mΩ @VGS = 10V. RDS(ON) = 22mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.

CED3120

Abstract: IDM144
Contextual Info: CED3120/CEU3120 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 36A , RDS ON = 15mΩ @VGS = 10V. RDS(ON) = 22mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.

Contextual Info: CED3055LA/CEU3055LA Nov. 2002 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 6 30V , 12A , RDS ON =60m Ω @VGS=10V. RDS(ON)=90m Ω @VGS=5V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability.

CEU3055LA

Contextual Info: CED3055LA/CEU3055LA N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 12A, RDS ON = 60mΩ @VGS = 10V. RDS(ON) = 90mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.

D3055

Abstract: U3055L 18-0IT D3055L
Contextual Info: CED3055L/CEU3055L P R E L IM IN A R Y N-Channel Enhancement Mode Field Effect Transistor FEATURES • 6 0 V , 8 A , R d s o n =1 50m Q @ Vgs=1 0V. R d s (o n )=1 80m Q D @Vgs=5V. • Super high dense cell design for extremely low Rds(on). • High power and current handling capability.

Contextual Info: CED3700/CEU3700 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 12A, RDS ON = 95mΩ @VGS = 10V. RDS(ON) = 130mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.

Contextual Info: CED3301/CEU3301 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -28A, RDS ON = 32mΩ @VGS = -10V. RDS(ON) = 50mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.

Contextual Info: CED30P10/CEU30P10 P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -30A, RDS ON = 76mΩ @VGS = -10V. RDS(ON) = 92mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.

Contextual Info: CED3301/CEU3301 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -28A, RDS ON = 32mΩ @VGS = -10V. RDS(ON) = 50mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.

Contextual Info: CED3070/CEU3070 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 62A, RDS ON = 9.5mΩ @VGS = 10V. RDS(ON) = 13.5mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.

d3055

Abstract: u3055 18-0IT
Contextual Info: CED3055L5/CEU3055L5 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES • 5 5 V , 8 A , R d s on =1 50m Q @ Vgs=1 0V. R d s (on )=1 80m Q @ Vgs=5V. • Super high dense cell design for extremely low Rds(on). • High power and current handling capability.

Contextual Info: CED3080/CEU3080 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 57A, RDS ON = 10mΩ @VGS = 10V. RDS(ON) = 14mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability.

TF410

Contextual Info: CED3252/CEU3252 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 25A, RDS ON = 28mΩ @VGS = 10V. RDS(ON) = 39mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.

251 36A

Contextual Info: CED3172/CEU3172 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 36A, RDS ON = 20mΩ @VGS = 10V. RDS(ON) = 28mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead free product is acquired.

Contextual Info: User’s Manual V850E/ME2 32-Bit Single-Chip Microcontroller Hardware µPD703111A Document No. U16031EJ3V0UD00 3rd edition Date Published June 2004 N CP(K) Printed in Japan [MEMO] 2 User’s Manual U16031EJ3V0UD NOTES FOR CMOS DEVICES 1 VOLTAGE APPLICATION WAVEFORM AT INPUT PIN

Contextual Info: Integrated Digital CCIR-601 to PAL/NTSC Video Encoder ADV7177/ADV7178 ANALOG DEVICES FEATURES ITU-R B T601/656 YCrCb to PAL/NTSC Video Encoder High Quality 9-Bit Video DACs Integral N onlinearity <1 LSB at 9 Bits NTSC-M, P A L-M /N , P A L -B /D /G /H /I Single 27 MHz Crystal/Clock Required x 2 Oversampling

Contextual Info: Altera Software Installation and Licensing Subscribe Send Feedback MNL-1065 2013.11.04 101 Innovation Drive San Jose, CA 95134 www.altera.com TOC-2 Altera Software Installation and Licensing Contents Altera Software Installation and

Contextual Info: a Video Encoder with Six 10-Bit DACs, 54 MHz Oversampling and Progressive Scan Inputs ADV7192 APPLICATIONS DVD Playback Systems PC Video/Multimedia Playback Systems Progressive Scan Playback Systems FEATURES Six High-Quality 10-Bit Video DACs 10-Bit Internal Digital Video Processing

F487 transistor

Abstract: 2A86 transistor D889 65e9 4B71 65e9 transistor ix 2933 F487 529B 0674
Contextual Info: Altera Software Installation and Licensing Version 10.0 Altera Software Installation and Licensing Version 10.0 Altera Corporation 101 Innovation Drive San Jose, CA 95134 408 544-7000 www.altera.com Altera Software Installation and Licensing Version 10.0

ADV7170

Abstract: EVAL-ADV7171EBM CED13 CCIR-656 PAL60 TC07 section18 euroscart
Contextual Info: Digital PAL/NTSC Video Encoder with 10-Bit SSAF and Advanced Power Management ADV7170/ADV7171 Programmable LUMA delay Individual on/off control of each DAC CCIR and square pixel operation Integrated subcarrier locking to external video source Color signal control/burst signal control

euroscart

Abstract: ADV7174 CCIR-656 TC07 w04c mr4000
Contextual Info: Chip Scale PAL/NTSC Video Encoder with Advanced Power Management ADV7174/ADV7179 FEATURES Programmable subcarrier frequency and phase ITU-R1 BT601/BT656 YCrCb to PAL/NTSC video encoder Programmable LUMA delay High quality 10-bit video DACs Individual on/off control of each DAC