CE 65 M Search Results

Contextual Info: 2N5818 SILICON NPN TRANSISTOR DESCRIPTION: The 2N5818 is an NPN Small Signal Transistor for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS lc 750 mA V ce 40 V P diss 500 mW @ TA = 25 °C Tj -65 °C t o +135 °C T stg -65 °C t o +150 °C

Contextual Info: 2N3227 m \\ SILICON NPN TRANSISTOR DESCRIPTION: The 2N3227 is Designed for General Purpose Low Current Switching Applications MAXIMUM RATINGS 200 mA lc 20 V ce P diss 1.2 W @ Tc = 25 °C Tj -65 °C to +200 °C T -65 °C to +200 °C stg 145 °C/W 0JC STATIC CHARACTERISTICS

Contextual Info: 2N5819 SILICON PNP TRANSISTOR DESCRIPTION: The 2N5819 is an PNP Small Signal Transistor for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS 750 mA lc V -40 V ce P diss 500 mW @ Ta = 25 °C Tj -65 °C t o +135 °C T -65 °C t o +150 °C

Silicon Zener Diodes melf

Abstract: 1N5225 1N5262 DL5225B DL5262B
Contextual Info: DL5225B thru DL5262B SILICON PLANAR ZENER DIODES Cathode Mark S tandard Z e n e r v o lta g e to e ra n ce is 620% . A d d s u ffix “A" fo r 610% to le ra n ce and su ffix “ B" fo r 65% tole ran ce. O th er tole ran ce, non sta n d a rd and h ig h e r Z e n e r vo lta g e s

2N3253

Contextual Info: ÀSII 2N3253 SILICON NPN TRANSISTOR DESCRIPTION: PACKAGE STYLE TO- 39 The 2N3253 is Designed as a Core Driver, and Saturated Switch. MAXIMUM RATINGS Ie 1.0 A V ce 40 V Pdiss 5.0 W @ Te = 25 0C Pdiss 1.0 W @ Ta = 25 0C Tj -65 0C to #200 0C T stg -65 0C to #200 0C

Contextual Info: m 2N6497 \ \ SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N6497 is Designed for High Voltage, High Speed, Power Switching Applications. MAXIMUM RATINGS 5.0 A 10 A PEAK 2.0 A lc Ib 250 V V ce 80 W @ Tc = 25 °C Tj -65 °C t o +150 °C T stg -65 °C t o +150 °C

Contextual Info: m 2N6132 \ \ SILICON PNP POWER TRANSISTOR DESCRIPTION: The 2N6132 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS 7.0 A lc 3.0 A Ib V 10 A PEAK -40 V ce 50 W @ Tc = 25 °C P diss Tj -65 °C t o +150 °C T -65 °C t o +150 °C

Contextual Info: m 2N3253 \ \ SILICON NPN TRANSISTOR DESCRIPTION: The 2N3253 is Designed as a Core Driver, and Saturated Switch. MAXIMUM RATINGS lc 1.0 A V ce 40 V P diss 5.0 W @ Tc = 25 °C P diss 1.0 W @ T a=25 °C Tj -65 °C to +200 °C T stg -65 °C to +200 °C 0JC 35 °C/W

FMMT415

Abstract: VHF Transistors BC856A BC856B BC857A BC857B BCW69 BCW70 BCW89 FMMT3905
Contextual Info: SOT-23 TRANSISTORS & DIODES GENERAL PURPOSE TRANSISTORS PNP Type BC856A P,o, V ^E(sat) Hf min./max. Eat Ir/V CE max at Iç/I b m A/volts Volts mA typ. MHz 150 yc,B° V CEO 'c mA mW 80 65 100 350 11 0/22 0 Volts Volts 2/5 0 .3 10/0.5 BC856B 80 65 100 350

2N2222n

Abstract: 2n3053A complementary 2N2017 2N2102 2N2102A 2N2192 2N2192A 2N2192B 2N2897 2N2193A
Contextual Info: TYPE NO. P O LA R ITY Medium Power Amplifiers and Switches CASE H MAXIMUM RATINGS Pd mW •c V CEO (A) (V) 1000 800 1000 1000 1 0.5 1 11 FE V CE(SAT) max 'c VC E (V) (V) 'c Cob COM PLE­ max M ENTARY (MHz) (pF) T YPE fT mki min max ImAI 60 50 65 65 50 100

C106B

Abstract: CY7C1006B CY7C106B 7C106B-12
Contextual Info: CY7C106B CY7C1006B 256K x 4 Static RAM Features Enable CE , an active LOW Output Enable (OE), and three-state drivers. These devices have an automatic power-down feature that reduces power consumption by more than 65% when the devices are deselected. • High speed

Contextual Info: MMBT5551 NPN HIGH VOLTAGE TRANSISTOR POWER 160 Volts 250 mWatts FEATURES 0.006 0.15 MIN. VOLTAGE 0.120(3.04) 0.110(2.80) • NPN Silicon, planar design • Collector-emitter voltage V CE = 160V • Collector current I C = 300mA • Lead free in compliance with EU RoHS 2011/65/EU directive

Contextual Info: m 2N3584 \ \ SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N3584 is Designed for General Purpose High Voltage Amplifier and Switching Applications PACKAGE STYLE T O -66 MAXIMUM RATINGS INCHES lc 2.0 A V ce 250 V P diss 35 W @ Tc = 25 °C Tj -65 °C to +200 °C

Contextual Info: m 2N3740A \ \ SILICON PNP MEDIUM POWER TRANSISTOR DESCRIPTION: The 2N3740A is a Medium Power Transistor for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO-66 MAXIMUM RATINGS INCHES lc 4.0 A V ce -60 V P diss 25 W @ Tc = 25 °C Tj -65 to +200 °C

Contextual Info: m 2N689 \ \ SILICON CONTROLLED RECTIFIER SCR DESCRIPTION: The 2N689 is Designed for General Purpose Industrial Power Control Applications. PACKAGE STYLE T O -48 MAXIMUM RATINGS lc 25 A (RMS) 16 A (avo @ Tc = 65 ° C V ce 500 V P diss PGM = 5.0 W P g(avg) = 0.5 W

Contextual Info: 2N6059 m \\ SILICON NPN-DARLINGTON POWER TRANSISTOR DESCRIPTION: The ASI 2N6059 is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE T O - 3 k. I MAX. I MAXIMUM RATINGS 12 A lc 100 V ce 150 W @ T C = 25 °C P diss -65 °C to +200 °C

Contextual Info: m 2N6213 \ \ SILICON PNP POWER TRANSISTOR DESCRIPTION: The 2N6213 is Designed for General Purpose High Voltage Amplifier and Switching Applications. MAXIMUM RATINGS lc INCHES A 6 C D E F G H J K L M -350 V ce 35 W @ Tc = 25 °C P diss Tj -65 °C to +200 °C

Contextual Info: m 2N1487 \ \ SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N1487 is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE T O - 3 MAXIMUM RATINGS V lc 6.0 A Ib 3.0 A ce SE A T N G PLAN t 40 V P diss 75 W @ Tc = 25 °C Tj -65 °C to +200 °C

CA016M0022REB-0405

Abstract: CB016M0010RSB-0405 CA050M0010RE CB035M0010RSC-0505 CA025M0220REF-0810 CA016M0470REG-1010 CB050M0R10RSB-0405 3r30 CA025M0010REB CA025M4R70REB-0405
Contextual Info: SURFACE MOUNT ALUMINUM ELECTROLYTIC CAPACITORS 67 CA Series 2,000 hrs. at 85°C 74 CB Series 1,000 hrs. at 105°C 81 CE Series 2,000 hrs. at 105°C 65 REEL DIMENSIONS Unit : mm 2±0.2 ø50 Min. ø13±0.5 ø21±0.5 ø380±2 W±1 SIZE CODE A B C D E F G W 14

Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. ^ .19 OIST IOC CE RIGHTS ^SERVED. REVISIONS 16 DESCRIPTION LTR D APVO DATE REVISE PER 0A 00-0661 - 0 0 CK KC O8AUGOO D D 1. DIM ENSIO NS IN 2. 0 .5 INSERTION 3. 65 dB dB

2n3054a

Contextual Info: m 2N3054A \ \ SILICON NPN POWER TRANSISTOR D E SC R IP T IO N : The 2N3054A is a Medium Power Transistor for General Purpose Switching and Amplifier Applications M A XIM U M R A T IN G S 4.0 A 10 A PEAK lc V INCHES 55 V ce 75 W @ Tc = 25 °C P diss -65 °C to +200 °C

Contextual Info: M ic r o c h ip 3 7 L V 3 6 /6 5 / 1 2 8 36K, 64K and 128K Serial EPROM Family PACKAGE TYPE FEATURES • Operationally equivalent to Xilinx XC1700 family • • • • • • • • PDIP "W DATA C 8 1 CLK C RESET/OE C 3 u IID lo • • • • • •

Contextual Info: 37LV36/65/128 M ic r o c h ip 36K, 64K and 128K Serial EPROM Family FEATURES PACKAGETYPE Operationally equivalent to Xilinx XC1700 family PDIP Wide voltage range 3.0 V to 6.0 V Maximum read current 10 mA at 5.0 V Standby current 100 iA typical Industry standard Synchronous Serial Interface/

Contextual Info: M7E D INTECRATED DEVICE • 4Ô25771 D 0 Q c17bQ 1 * I D T CMOS DUAL-PORT RAM 16K 2K x 8-BIT WITH INTERRUPTS In te g ra te d Device Technology, In c. FEATURES: IDT71321SA/LA IDT71421SA/LA DESCRIPTION: • High-speed access T h e 1D T71321/ID T71421 are high-speed 2 K x 8 dual­