CE 65 M Search Results

Contextual Info: m 2N5781 \ \ SILICON PNP TRANSISTOR DESCRIPTION: The 2N5781 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS lc 3.5 A Ib 1.0 A V -65 V ce P diss 10 W @ T C = 25 °C Tj -65 °C to +200 °C T -65 °C to +200 °C stg 17.5 °C/W

Contextual Info: m 2N5784 \ \ SILICON NPN TRANSISTOR DESCRIPTION: The 2N5784 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS V lc 3.5 A Ib 1.0 A 65 V ce P diss 10 W @ T C = 25 °C Tj -65 °C to +200 °C T -65 °C to +200 °C stg 17.5 °C/W

TO1C

Abstract: 2N2188 IN404 2N2482 IN392 2N4040/A 2N994 INTEX 2NB642 2N3866
Contextual Info: discrete devices SEMICONDUCTORS j e m it r o n • Semitronics Corp. silicon transistors T '31'û l 4äbTS4b 00002^1 7 I INTEX/ SE MITRONICS CORP 27E D UHF/VHF power transistors 7 ~ - 3 7 - o / NPN type -7H ÌÌK 65 « V CE 5.ÍÍÍ3553 6b :'*K3 6« 65 ZN3T33 65

Contextual Info: 57 C4500-40/50/65/80 High Density First-in First-out FIFO 256x9 CMOS Memory A d van ce Inform ation DISTINCTIVE CHARACTERISTICS RAM based FIFO 256x9 organization Cycle times of 50/65/80/100 nanoseconds Asynchronous and simultaneous writes and reads Low power consumption - 80 mA maximum

Contextual Info: m 2N3499 \ \ SILICON NPN TRANSISTOR DESCRIPTION: The 2N3499 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS lc 300 mA V ce 100 V P diss 5.0 W @ Tc = 25 °C Tj -65 °C to +200 °C T stg -65 °C to +200 °C 0JC 35 °C/W

Contextual Info: 2N5818 SILICON NPN TRANSISTOR DESCRIPTION: The 2N5818 is an NPN Small Signal Transistor for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS lc 750 mA V ce 40 V P diss 500 mW @ TA = 25 °C Tj -65 °C t o +135 °C T stg -65 °C t o +150 °C

Contextual Info: 2N3227 m \\ SILICON NPN TRANSISTOR DESCRIPTION: The 2N3227 is Designed for General Purpose Low Current Switching Applications MAXIMUM RATINGS 200 mA lc 20 V ce P diss 1.2 W @ Tc = 25 °C Tj -65 °C to +200 °C T -65 °C to +200 °C stg 145 °C/W 0JC STATIC CHARACTERISTICS

Contextual Info: 2N5819 SILICON PNP TRANSISTOR DESCRIPTION: The 2N5819 is an PNP Small Signal Transistor for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS 750 mA lc V -40 V ce P diss 500 mW @ Ta = 25 °C Tj -65 °C t o +135 °C T -65 °C t o +150 °C

Contextual Info: m 2N2193A \ \ SILICON NPN TRANSISTOR DESCRIPTION: The 2N2193A is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS lc 1.0 A V ce 50 V V cb 80 V P diss 2.8 W @ Tc = 25 °C Tj -65 °C to +200 °C T stg -65 °C to +200 °C 0JC

Contextual Info: m 2N2219A \ \ SILICON NPN TRANSISTOR DESCRIPTION: The 2N2219A is Designed for General Purpose Switching and Amplifier Applications. MAXIMUM RATINGS lc 800 mA V ce 40 V 3.0 W @ Tc = 25 °C P diss Tj -65 °C to +200 °C T stg -65 °C to +200 °C 0JC 58.3 °C /W

Contextual Info: m 2N3019 \ \ SILICON NPN TRANSISTOR DESCRIPTION: The 2N3019 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS 1.0 A lc V 80 V ce 5.0 W @ Tc = 25 °C P diss Tj -65 °C to +200 °C T -65 °C to +200 °C stg 16.5 °C/W 0JC

Contextual Info: m 2N3020 \ \ SILICON NPN TRANSISTOR DESCRIPTION: The 2N3020 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS 1.0 A lc V 80 V ce P diss 5.0 W @ Tc = 25 °C Tj -65 °C to +200 °C stg -65 °C to +200 °C T 16.5 °C/W 0JC

Contextual Info: 2N3501 m \\ SILICON NPN TRANSISTOR DESCRIPTION: The 2N3501 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS 300 mA lc V 150 V ce P diss 5.0 W @ T C= 2 5 °C Tj -65 °C to +200 °C T -65 °C to +200 °C stg 35 °C/W 0JC

Contextual Info: m 2N6190 \ \ SILICON PNP MEDIUM POWER TRANSISTOR DESCRIPTION: The 2N6190 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS 5.0 A lc V -80 V ce P diss 10 W @ T C = 25 °C Tj -65 °C to +200 °C stg -65 °C to +200 °C T 17.5 °C/W

Contextual Info: m 2N3635 \ \ SILICON PNP TRANSISTOR DESCRIPTION: The 2N3635 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS 300 mA lc V -140 V ce P diss 5.0 W @ T C= 2 5 °C Tj -65 °C to +200 °C T -65 °C to +200 °C stg 35 °C/W 0JC

Contextual Info: m 2N6292 \ \ SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N6292 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS 7.0 A lc 3.0 A Ib V 10 A PEAK 70 V ce 40 W @ Tc = 25 °C P diss Tj -65 °C to +200 °C T -65 °C to +200 °C

Contextual Info: m 2N2243A \ \ SILICON NPN TRANSISTOR DESCRIPTION: The 2N2243A is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS 1.0 A lc PEAK ce 80 V P d is s 2.8 W @ Tc = 25 °C T j -65 °C to +200 °C T stg -65 °C to +200 °C V 62.5 °C/W

C2N2222A

Contextual Info: 2N2222A SILICON NPN TRANSISTOR DESCRIPTION: PACKAGE STYLE TO-18 The 2N2222A is Designed for General Purpose Switching and Amplifier Applications. MAXIMUM RATINGS Ie 800 mA V ce 40 V P d iss 1.8 W @ Te " 25 0C Tj -65 0C to +200 0C Ts tg -65 0C to +200 0C 0 jc

2n2243 transistor

Contextual Info: m 2N2243 \ \ SILICON NPN TRANSISTOR DESCRIPTION: The 2N2243 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS 1.0 A lc PEAK ce 80 V P d is s 2.8 W @ Tc = 25 °C T j -65 °C to +200 °C T stg -65 °C to +200 °C V 62.5 °C/W

Silicon Zener Diodes melf

Abstract: 1N5225 1N5262 DL5225B DL5262B
Contextual Info: DL5225B thru DL5262B SILICON PLANAR ZENER DIODES Cathode Mark S tandard Z e n e r v o lta g e to e ra n ce is 620% . A d d s u ffix “A" fo r 610% to le ra n ce and su ffix “ B" fo r 65% tole ran ce. O th er tole ran ce, non sta n d a rd and h ig h e r Z e n e r vo lta g e s

2N3253

Contextual Info: ÀSII 2N3253 SILICON NPN TRANSISTOR DESCRIPTION: PACKAGE STYLE TO- 39 The 2N3253 is Designed as a Core Driver, and Saturated Switch. MAXIMUM RATINGS Ie 1.0 A V ce 40 V Pdiss 5.0 W @ Te = 25 0C Pdiss 1.0 W @ Ta = 25 0C Tj -65 0C to #200 0C T stg -65 0C to #200 0C

Contextual Info: DL5225B thru DL5262B SILICON PLANAR ZENER DIODES Cathode Mark S tandard Z e n e r v o lta g e to e ra n ce is 620% . A d d s u ffix “A" fo r 610% to le ra n ce and su ffix “ B" fo r 65% tole ran ce. O th er tole ran ce, non sta n d a rd and h ig h e r Z e n e r vo lta g e s

Contextual Info: m 2N6497 \ \ SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N6497 is Designed for High Voltage, High Speed, Power Switching Applications. MAXIMUM RATINGS 5.0 A 10 A PEAK 2.0 A lc Ib 250 V V ce 80 W @ Tc = 25 °C Tj -65 °C t o +150 °C T stg -65 °C t o +150 °C

Contextual Info: m 2N6132 \ \ SILICON PNP POWER TRANSISTOR DESCRIPTION: The 2N6132 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS 7.0 A lc 3.0 A Ib V 10 A PEAK -40 V ce 50 W @ Tc = 25 °C P diss Tj -65 °C t o +150 °C T -65 °C t o +150 °C