CDQ2 Search Results

D-P5DW

Abstract: 10 35L W1 double acting cylinder 10 35L CAP CDQ2B63 D-J79W ya10 THREAD ROD 11-CQ2 CQ2B16-PS
Contextual Info: Compact Cylinder: Standard Type Double Acting, Single Rod Series CQ2 ø12, ø16, ø20, ø25, ø32, ø40, ø50, ø63, ø80, ø100 How to Order Without auto switch With auto switch CQ2 B 20 30 D CDQ2 B 20 30 D J79W S Built-in magnet Ȝ Ȝ Mounting style Ȝ B Through-hole Standard F Rod side flange style

Contextual Info: WTELEDYNE COMPONENTS CDQ2269 DUAL SPDT CMOS/DMOS ANALOG SWITCH WITH DATA LATCH FEATURES GENERAL DESCRIPTION • ■ ■ • ■ Teledyne Components' CMOS/DMOS analog switches feature high-speed, low-power CMOS input logic and level translation circuitry, and high-speed, low-capacitance, lat­

D-A93Z

Abstract: D-A93-M8 D-Z73L d-j79l smc d-a73c D-J79C D-Y59B smc d-j79 D-A93VL SMC D-A93
Contextual Info: MGG CDG1 MX CDM2 CRB2BW Z MY1 Z CDU Z MGQ Z CXS Z CQM Z MK X Z Z Z RSQ X X Z C55 Z Z CDJP Z Z X CJP Z Z CDQ2 X CDJ2 X CJ1 Z CG1 Z CP95 Z CDJ5 X X CDJ2 RS Stock No. 726459/1834832 6862558 2508661432 2508661381 2508661404 2509544433 2508661426 2508661410 2508661397

K557

Abstract: TC511000Aj THM361020S-80 THM361020S thm361020
Contextual Info: W\ Ut -IKUWH'i1!'11-iJHii - - - : — THM361020S-80, 10 THM361020SG-80, 10 1,048,576 W O R D S X 36 BIT D Y N A M IC RAM M O DULE DESCRIPTION The THM36102CS is a 1,048,576 words by 36 bits dynamic RAM module which assembled 8 pcs of TC514400J and 4 pcs of TC511000AJ on the printed circuit board. The THM361020S can be as well

THM365120AS80

Abstract: tc51256t THM365120 TC51256
Contextual Info: TOSHIBA MOS MEMORY PRODUCTS THM365120AS-70, 80, 10 description] The TKM365120AS is a 524,288 words by 36 bits dynamic RAM module which assembled 16 pcs of TC514256AJ and 8 pcs of TC51256T on both sides the printed circuit board. The THM365120AS is optimized for application to the system which are required

CHIP SM 4108

Abstract: SM 4108 sm 4109 un 5111 IC
Contextual Info: TELEDYNE COMPONENTS 2flE D m öWbQE 0Ü0L.3Q7 7 M CDG2214 S E M IC O N D U C T O R HIGH SPEED ANALOG SWITCH ORDERING INFORMATION 8-Pin Ceramic Dip Package 13 :• — ■- 8-Pin Plastic Dip (Package 8) One SPST Switch Industrial Temperature Range C0G2214BJ

DS12

Contextual Info: O K I Semiconductor MSC23436 A-xxBS 12 /DS 12 4,194,304-Word x 36-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23436A-xxBS12/DS12 is a fully decoded 4,194,304-word x 36-bit CMOS Dynamic Random Access M emory M odule com posed of eight 16-Mb DRAMs 4M x 4 in SOJ packages

DS24

Contextual Info: O K I Semiconductor MSC238361A-xxBS24/PS24 8,388,608-Word x 36-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI M SC238361A-xxBS24/ DS24 is a fully decoded 8,388,608-word x 36-bit CMOS Dynamic Random Access Memory Module composed of sixteen 16-Mb DRAMs 4M x 4 in SOJ packages

cc 052

Contextual Info: TO SH IBA THMD51E30B70,75,80 TENTATIVE TO SHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 67,108,864-WORD BY 72-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THMD51E30B is a 67,108,864-word by 72-bit Double Data Rate synchronous dynamic RAM module consisting of 18 TC59SM803BFT DRAMs and PLL/Registers on a printed circuit board.

MO-23

Abstract: THM362040ASG-60 MO23 CDQ2 THM362040ASG
Contextual Info: TOSHIBA 'IHM36204QAS/ASG-60/70/80 2,097,152 WORD X 36 BIT DYNAMIC RAM MODULE DESCRIPTION The THM362040A is a 2,097,152 word by 36 bit dynamic RAM module which is assembled with 18 TC514400ASJ devices and 8 TC511000BFT devices on the printed circuit board. This module can be used as

HYM536410MG

Contextual Info: HYM536410 M -Series •HYUN DAI 4M X 36-blt CMOS DRAM MODULE DESCRIPTION The HYM536410 is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY5117400 in 24/28 pin SOJ and four HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22pF decoupling

HYM536100M

Contextual Info: 'HYUNDAI SEMICONDUCTOR HYM536100 Series 1M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536100 Is a 1M x 36-bit Fast page mode CMOS ORAM module consisting of eight HY514400 and four HY531000 in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22fiF decoupling capacitor is mounted

DD 127 D

Contextual Info: TOSHIBA THMD12N11 B70#75#80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THMD12N11B is a 16,777,216-word by 64-bit Double Data Rate synchronous dynamic RAM module consisting of 4 TC59WM815BFT DRAMs on a printed circuit board.

Contextual Info: December 1993 Edition 1.0 FUpSU DATA SHEET M B 9 8 B 7 5 14-80 DRAM MEMORY CARD DYNAMIC RANDOM ACCESS MEMORY CARD 4M x 18 bits / 2M x 36 bits The Fujitsu MB98B7514 is a Dynamic Random Access Memory DRAM card consisting of sixteen MB814400AL devices and eight MB81C1000AL devices.

MB85323A-70

Contextual Info: September 1993 Edition 1.0 FUJITSU DATA SHEET MB85323A-60/-70/-80 CMOS 1 M x 36 Fast Page Mode DRAM Module CMOS 1,024,576 x 36 Bit Fast Page Mode DRAM Module «ft* * * 11 The Fujitsu MB85323A is a fully decoded, CMOS dynamic random access memory DRAM module consisting of eight MB814400A devices and four MB81C1000A

Contextual Info: TOSHIBA THLD25N01 B70#75#80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 64-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THLD25N01B is a 33,554,432-word by 64-bit Double Data Rate synchronous dynamic RAM module consisting of 8 TC59WM815BFT DRAMs on a printed circuit board.

AN 7580

Abstract: TC59WM815BFT
Contextual Info: TOSHIBA THMD12E11 B70#75#80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 16,777,216-WORD BY 72-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THMD12E11B is a 16,777,216-word by 72-bit Double Data Rate synchronous dynamic RAM module consisting of 5 TC59WM815BFT DRAMs on a printed circuit board.

DQSO

Abstract: TC59WM807BFT
Contextual Info: TOSHIBA THMD25N11B70#75#80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 64-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THMD25N11B is a 33,554,432-word by 64-bit Double Data Rate synchronous dynamic RAM module consisting of 8 TC59WM807BFT DRAMs on a printed circuit board.

ite 8892

Abstract: MB8532 MB85323A-70
Contextual Info: September 1993 Edition 2.0 FUJITSU DATA SHEET'- M B 85323A -60/-70/-80 CMOS 1Mx 36 Fast Page Mode DRAM Module CMOS 1,024,576 x 32 Bit Fast Page Mode DRAM Module The Fujitsu MB85323-A is a fully decoded, CMOS dynamic random access memory DRAM module consisting of eight MB814400A devices and four

hym536810

Abstract: HYM53
Contextual Info: HYM536810 M-Series •HYUNDAI 8M x 36-blt CMOS DRAM MODULE DESCRIPTION The HYM536810 is a 8M x 36-bit Fast page mode CMOS DRAM module consisting of sixteen HY5117400 in 24/28 pin SOJ orTSOP and eight HY514100A in 20/26 pin SOJ orTSOP II on a 72 pin glass-epoxy printed circuit board.

thm365120

Contextual Info: 524,288 W O RDS x 36 BIT DYNAMIC RAM MODULE DESCRIPTION The THM365120BS/BSG/AS/ASG is a 524,288 words by 36 bits dynamic RAM module which assembled 16 pcs of TC514256AJ/BJ and 8 pcs of TC51256T on the printed circuit board. These modules can be as well used as 1,048,576 words by 18 bits dynamic RAM module, by m eans of

Contextual Info: SAMSUNG ELECTRONICS INC b4E D • 7^4142 KMM5361000A/AG Q014Sh4 SfiS « S M G K DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION The Samsung KM M 5361000A is a 1M bitsX36 Dynamic RAM high density memory module. The Samsung KM M 5361000A consist of eight CMOS 1 M X 4 bit

KMM5361000/A

Contextual Info: SAMSUNG E LECTRONI CS INC b4E T> • TTbMlMS G 01 4 57 5 KMM5361OOOA1/A1G DhD DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module GENERAL DESCRIPTION FEATURES The Samsung KMM5361000A1 is a 1M bits x 36 Dynamic RAM high density memory module. The Samsung KMM5361000A1 consist of eight CMOS 1M x4 bit

Contextual Info: SAMSUNG ELECTRONICS INC b 4E D • 7T b 4142 G a m b a s KMM5362000A1/A1G 41b ■ SMGK DRAM MODULES 2M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5362000A1 is a 2M bitsX36 Dynamic RAM high density memory module. The Samsung