CD0008 Search Results

SV372

Contextual Info: VCO 1.APPLICATION W-CDMA specification preliminary 1/2 IF 2.PART No. CD0008 3.DIMENSIONS NC G OUT SV372 CD0008 ● SE 371 G VB max3.5 VC SIDE VIEW 10.0 OUT : RF OUTPUT VB : POWER SUPPLY VC : CONTROL VOLT. G : GROUND NC : GROUND NOTE : There is no mark of

27LS00

Abstract: 27LS01 27LS00 RAM Am27LS
Contextual Info: Am27LS00/01 Series 256-Bit Low-Power Schottky Bipolar RAM > 3 DISTINCTIVE CHARACTERISTICS • • High Internal ECL circuitry for optimum speed/power perfor­ mance over voltage and temperature • Output preconditioned during write to eliminate the write

SSSB

Contextual Info: HO» Pago 0001 01/16/89 11:19:17 Tx: AM27S07 - Ft: AMO FMT Am27S07 E 64-Bit Noninverting-Output Bipolar RAM DISTINCTIVE CHARACTERISTICS • • Fully decoded 16-word x 4-bit tow power Schottky RAMs Internal ECL circuitry for optimum speed/power perfor­ mance over voltage and temperature

Contextual Info: ADV MICRO {MEMORY} fli 0257528 ADV MICRO MEMORY D E § 0557520 0055515 1 89D f-4 6 -2 3 -0 8 üf 25595 Am27S07 64-Bit Noninverting-Output Bipolar RAM > 3 PO DISTINCTIVE CHARACTERISTICS • • • Fully decoded 16-word x 4-bit low power Schottky RAMs Internal ECL circuitry for optimum speed/power perfor­

74S189

Abstract: 74S289 AM27S02 AM27S02PC CD000831 27S03
Contextual Info: A m 2 7 S 0 2 /2 7 S 0 3 64-Bit Inverting-Output Bipolar RAM • • Fully decoded 16 word x 4-bit low-power Schottky RAMS Ultra-Fast "A " Version: Address access time 25ns Internal ECL circuitry for optimum speed/power perfor­ mance over voltage and temperature

am27s07

Contextual Info: Am27LS06/27LS07 64-Bit Low-Power Noninvsrting-Output Bipolar RAM DISTINCTIVE CHARACTERISTICS • • • • Fully decoded 16-word x 4-bit low power Schottky RAMs Internal ECL circuitry for optimum speed/power perfor­ mance over voltage and temperature Output preconditioned during write to eliminate the write

DGM181-191

Abstract: DG181
Contextual Info: DGM181-191 DGM181-191 High-Speed CMOS Analog Switch GENERAL DESCRIPTION FEATURES The DGM181 family of CMOS monolithic switches utilizes intersii’s latch-free junction isolated processing to combine the speed of the hybrid DG181 family with the reliability and

AM27S03

Abstract: A35CS AM27S02 20D3 74S189 74S289 fmuml
Contextual Info: Page 0001 11/23/88 15:06:24 Tx: AM27S02 TED • Ft: AMD FMT twforiwtfcm S< rv ie> fc Inc. Am 27S02/Am 27S03 64-Sit Inverting-Output Bipolar RAM > a DISTINCTIVE CH A R A C T E R IST IC S Fully 16 word x 4-bit low-power Schottky RAM S Ultra-Fast Version; Address access time 25 ns

AM27S03

Contextual Info: ADV MICRO {MEMORY} 0257528 0ES7S5ä D05SSti3 Q T|~ ADV M ICRO MEMORY 89D 25563 D ^ T -4 6 -2 3 -0 8 Am27S02/Am27S03 P 64-Bit Inverting-Output Bipolar RAM DISTINCTIVE CHARACTERISTICS • • • Fully decoded 16 word x 4-bit low-power Schottky RAMS Ultra-Fast Version: Address access time 15 ns

27ls06

Contextual Info: Am27LS06/27LS07 64-Bit Low-Power Noninverting-Output Bipolar RAM DISTINCTIVE CHARACTERISTICS • • • Fully decoded 16-word x 4-bit low power Schottky RAMs Internal ECL circuitry for optimum speed/power perfor­ mance over voltage and temperature Output preconditioned during write to eliminate the write

Contextual Info: Am3101/3101-1 64-Bit Write Transparent, Inverting Output, Bipolar RAM DISTINCTIVE CHARACTERISTICS • • • Standard version; Address access time 50 ns Low power: Ice typically 75 mA Internal ECL circuitry for optimum speed/power perfor­ mance over voltage and temperature

AM27S06A

Abstract: 27S07A 27s07 Am27S06/27S07
Contextual Info: Am27S06/27S07 64-Bit Noninverting-Output Bipolar RAM • Available with three-state outputs Am27S07/07A or with open collector outputs (Am27S06/06A) Electrically tested and optically inspected die for the assemblers of hybrid products • GENERAL DESCRIPTION

27lS03

Abstract: 74ls189 ram 74LS189 74LS289
Contextual Info: A m 27LS 02/27L S 03 64-Bit Low-Power Inverting-Output Bipolar RAM • • Fully decoded 16 word x 4-bit low-power Schottky RAMs Low Power Internal ECL circuitry for optimum speed/power perfor­ mance over voltage and temperature • • • Output preconditioned during write to eliminate write

74S189

Abstract: 74S289 AM27S02
Contextual Info: Page 0001 11/23/88 15:06:24 Tx: AM27S02 TED • Ft: AMD FMT twforiwtfcm S< rv ie> fc Inc. Am 27S02/Am 27S03 64-Sit Inverting-Output Bipolar RAM > a DISTINCTIVE CHARACTERISTICS Fully 16 w ord x 4-b it low -pow er S chottky RAMS Ultra-Fast Version; Address access time 25 ns

Encad

Contextual Info: flQM % 's. ' Pago 0001 0 1 /1 6 /8 9 11:19:17 Tx: A M 27S 07 - Ft: AM O F M T Am27S07 64-Bit Noninverting-Output Bipolar RAM > 3 M DISTINCTIVE CHARACTERISTICS • • F ully decoded 16-w ord x 4-bit tow pow er S chottky RAMS Internal ECL circuitry fo r optimum speed/pow er perfor­

Am27ls00

Abstract: AM27LS01 27LS01 Am27LS01-1
Contextual Info: Am 27LS00/01 Series 256-Bit Low-Power Schottky Bipolar RAM Output preconditioned during write to eliminate the write recovery glitch Available with three-state outputs or with open-collector outputs High speed Internal ECL circuitry for optimum speed/power perfor­

16-TX

Abstract: AM27S07
Contextual Info: flQM % 's. ' Pago 0001 0 1 /1 6 /8 9 11:19:17 Tx: A M 27S 07 - Ft: AM O F M T Am 27S07 64-Bit Noninverting-Output Bipolar RAM > 3 M DISTINCTIVE CHARACTERISTICS • • Fully decoded 16-word x 4-bit tow power Schottky RAMS Internal ECL circuitry for optimum speed/power perfor­

27S03

Contextual Info: Am27S02/27S03 64-Bit Inverting-Output Bipolar RAM • • • Fully decoded 16 word x 4-bit low-power Schottky RAMS Ultra-Fast " A " Version: Address access time 25ns Internal E C l circuitry for optimum speed/power perfor­ mance over voltage and temperature

Contextual Info: ]>i| 02S7S2Ö OOSSSÖS T ADV MICRO -CMEMORY} 0257528 ADV M I C R O MEMORY 89D 25 585 T dfi q S" Am27LS07 flft T462308 64-Bit Low-Power Noninverting-Output Bipolar RAM Ï DISTINCTIVE CHARACTERISTICS • • Fully decoded 16-word x 4-bit low-power Schottky

27S06

Abstract: 27S07A M 3101
Contextual Info: Am27S06/27S07 64-Bit Noninverting-Output Bipolar RAM DISTINCTIVE CHARACTERISTICS • • • Fully decoded 16-word x 4-bit low power Schottky RAM s Internal E C L circuitry for optimum speed/power perfor­ mance over voltage and temperature Output preconditioned during write to eliminate the write

AM27S06A

Contextual Info: Am27S06/27S07 64-Bit Noninverting-Output Bipolar RAM DISTINCTIVE CHARACTERISTICS • • • Fully decoded 16-word x 4-bit low power Schottky RAMs Internal ECL circuitry for optimum speed/power perfor­ mance over voltage and temperature Output preconditioned during write to eliminate the write

27S181A

Abstract: 27S180 27S181 lta9 L81A pcb diagram of mini ups system RPS18 27ps181 AM27S 7S180
Contextual Info: Am27S180/27S181/PS181 Am27S280/27S281/PS281 Am27S180/27S181/PS181 Am27S280/27S281/PS281 8,192-Bit 1 024x8 Bipolar PROM DISTINCTIVE CHARACTERISTICS Fast access time allows high system speed 50% power savings on deselected parts — enhances reliability through total system heat reduction

interfacing of 8257 devices with 8085

Abstract: IC 7430 IC-7430 BPK-72 Bubble Memory 8085 microprocessor BPK72 7430E IC7406 8085 Manual 6116 interface 8085
Contextual Info: in tJ APPLICATION NOTE AP-150 O ctober 1983 IN T E L C O RPO RATIO N, 1982 6-86 O C TO B E R 1983 O R D ER N U M B ER : 210849-002 AP-150 8085 TO BPK 72 INTERFACE INTRODUCTION Bubble Memory is quickly emerging as the preferred high density storage medium for a variety of microprocessor

Contextual Info: ADV MI CR O -CMEMORY} ai dËJ D5S7S5Ö 0035574 0 2 5 7 5 2 8 ADV MICRO MEMORY 4 :89D 2 5 5 7 4 D ^ T^ 4 6-23-08 Am 3101 64-Bit Write Transparent, Inverting Output, Bipolar RAM > i DISTINCTIVE CHARACTERISTICS • • • CP High speed Fully decoded 16-word x 4-bit Schottky RAMs