T462308 Search Results

Contextual Info: ]>i| 02S7S2Ö OOSSSÖS T ADV MICRO -CMEMORY} 0257528 ADV M I C R O MEMORY 89D 25 585 T dfi q S" Am27LS07 flft T462308 64-Bit Low-Power Noninverting-Output Bipolar RAM Ï DISTINCTIVE CHARACTERISTICS • • Fully decoded 16-word x 4-bit low-power Schottky

C1663

Abstract: ci685 7C168 CY7C169 016A6 CY7C168 c16s1 cypress jib 4096X4
Contextual Info: MbE D ssfl^bbs Doobso? a cacYP CY7C168 CY7C169 ^ L / 4- i V O â •*î ^ Features a ’c y pr e ss SEMICONDUCTOR Functional Description Automatic power-down when dese­ lected 7C168 CMOS for optimum speed/power High speed — tAA = 25 ns — tACE = lSns(7C169)

0148-t

Abstract: CY7C148 CY7C149 CY7C148-25DC up c1482 0148t L5045 CY7C148-35PC CY7C148-35DC MU 350
Contextual Info: CYPRESS SEMICONDUCTOR MbE D B DODbMll 2 5 0 ^ 2 b EÏCYP CY7C148 CY7C149 CYPRESS SEMICONDUCTOR Automatic power-down when dese­ lected 7C148 CMOS for optimum speed/power 25-ns access time Low active power — 440 mW (commercial) — 60S m\V (military) Low standby power (7C148)

TP 152N

Abstract: CI23 k7315 2A mosfet igbt driver stage as256words CY7C123
Contextual Info: MbE D CYPRESS SEMICONDUCTOR E3 2 S 0 ciL.iJ2 D D O b B I R 7 C l C Y P CY7C123 CYPRESS SEMICONDUCTOR Functional Description 256 x 4 static RAM for control store in high-speed computers CMOS foroptimum speed/power High speed — 7 ns commercial — 10 ns (military)

27LS02

Abstract: AM27LS03 AM27LS03-30/BEA
Contextual Info: ADV M I C R O {MEflORY} &*\ D e 05 5 7 5 2 0 00BS553 7 0257528 ADV MICRO (MEMORY 890 25553 D T-46-23-08 Am 27LS02/Am 27LS03 H 64-Bit Low-Power Inverting-Output Bipolar RAM > 3 DISTINCTIVE CHARACTERISTICS Fully decoded 16 word x 4-bit low-power Schottky

CY7C171-45VC

Abstract: 7C172-35 CY7C171-35PC CY7C171-45DMB A10C CY7C171 CY7C172 7C171-25 CY7C172-35PC 2272 aq
Contextual Info: 4 bE D • 23 3 *^ 2 QDOtSBB =5 E ICYP *0VH <O -V?<y& s? CYPRESS SEMICONDUCTOR CY7C171 CY7C172 4096 x 4 Static R/W RAM Separate I/O R eading th e device is accom plishedby tak­ ing chip enable CE LOW, while write en­ able (W E) remains H IG H . U nder these con­

7C168A

Abstract: CY7C168A CY7C169A 7C168 CY7C168A-25LMB
Contextual Info: CYPRESS SEM ICOND UC TO R MhE D ^ B 250^2 GODbSlM 5 O C V P ,7 ^ CY7C168A CY7C169A <VH 'V? -O 2> CYPRESS SEMICONDUCTOR Features Automatic pow er-dow n when dese­ lected 7C168A CMOS for optimum speed/power High speed — U a = 15 n s — tACE = 10ns(7C169A)

A10C

Abstract: CY7C170 C1702 7C170 SA78
Contextual Info: 4bE » n QDGbSS3 b • ICYP 256^2 CY7C170 *»■> sÆ CYPRESS _ g SEMICONDUCTOR 4096 x 4 Static R/W RAM Features Functional Description • CMOS for optimum speed/power • H ighspeed The CY7C170 is a high-performance CMOS static RAM organized as 4096

Contextual Info: ADV MICRO {MEMORY} fli 0257528 ADV MICRO MEMORY D E § 0557520 0055515 1 89D f-4 6 -2 3 -0 8 üf 25595 Am27S07 64-Bit Noninverting-Output Bipolar RAM > 3 PO DISTINCTIVE CHARACTERISTICS • • • Fully decoded 16-word x 4-bit low power Schottky RAMs Internal ECL circuitry for optimum speed/power perfor­

Contextual Info: FUJITSU M I C R O E L EC TR ON IC S 23E D • 374T7b2 ODOflltl 3 ■ E C ^ 1 0 2 4 IB IT » FUJITSU BIPOEEAR RANDÖI ACCESS MEMOR MBM 100422A-5 MBM 100422A-7 T-<4t>-ZVOg April 1987 Edition 3.Ô 1024-BIT BIPOLAR ECL RANDOM ACCESS MEMORY The Fujitsu MBM 100422A Is fully decoded 1024-bit EC L read/write random

Contextual Info: FUJITSU M I CR OELE CT RO NI CS 23E D F U JIT S U 374T7fa2 0QQÖ3S5 S M B M 1 0 0 4 8 4 A -8 —r - » / / / T ^ h ? " 2 .3 > - 0 8 August 1988 Edition 2.0 16384-BIT BIPPOLAR ECL RANDOM ACCESS MEMORY The Fujitsu MBM 100484A is fully decoded 16384-bit E C L read/write random

Contextual Info: FUJITSU MICROELECTRONICS F U JIT S U B3E D • 3 7 4 ì 7 bS O O P ä l S S ñ ■ ECfel024 -BIH ^S: M BM 10422A-5 BIPOLARRANDOIU» M BM 10422A-7 T -% -Z 3 -0 S ApriT 1986 Edition 3.0 1024-BIT BIPOLAR ECL RANDOM ACCESS M EM O RY The Fujitsu M B M 10422A is fully decoded 1024-bit E C L read/write random

Contextual Info: LO GI C D E V I C E S INC EbE D • S S b S iO S O Q O C H T t - a ' B _ 4K x 4 Static RAM FEATURES □ 4K x 4 Static RAM with Common I/O, Output Enable L7C170 only □ Auto-Powerdown Design Q Advanced CMOS Technology □ Highspeed — to 8 ns maximum

HM-6514-9

Contextual Info: MbE ì> HARRIS SEMICOND SECTOR f f t H U U SEMICONDUCTOR A R R m *4305571 003^110 3 « H A S HM-6514 I S 10 24 x 4 CMOS RAM February 1992 Features Description • The HM-6514 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes

Contextual Info: ADV MICRO I 0ES7S2Ô 14E D MEMORY 0 G2 7 SL . 3 . *i | a Am9150 Advanced Micro Devices 1024x4 High-Speed Static R/W RAM DISTINCTIVE CHARACTERISTICS • • • • • • • • 1024 x 4 organization High speed- 2 0 ns Max. access time Separate data inputs and outputs

marking A4t 95

Abstract: A7417
Contextual Info: EÜÉMMk&fcAC 3flE D MICRON TECHNOLOGY INC • b lllS M T GGOSTtH ^ ■P IR N T - ü L - lX - n Q 4K X 4 SRAM SRAM FEATURES PIN ASSIGNMENT Top View • H igh speed: 12,15,20,25,30 and 35ns • High-performance, low-power, CMOS double metal process • Single +5V (±10%) pow er supply

Contextual Info: MICRON TECHNOLOGY INC V SSE D ic in a r s i SRAM blllSMT DGG33bM ITS B U R N MT5C1604 4K X 4 S R A M 4K X 4 SRAM • High speed: 8*, 10,12,15,20 and 25ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply_ • Easy memory expansion with CE option

Contextual Info: FUJITSU MIC RO E L E C T R ON I C S 23E D • 374m2 0D0ñ255 1 ■ 000201230201010201010201020101020201 FU JITSU tBIPOEÀRsRANDOIVt 000001000201004801000123020100020102 ACGESSM EM ÖR^ M B M 1 0 0 4 7 4 A - 1 0 M B M 1 0 0 4 7 4 A -1 5 A u g u st 1986 E d itio n 2 .0

24cc02

Abstract: 100474A-5 Fujitsu b-1100
Contextual Info: FU JITSU MI CRO E L E C T R ON I C S 3 7 4=i7fciE 0000235 b 23E D n ~ -*4 fe -Z 3 > -0 8 FU JIT SU EC0Ç4O96-BlllfëÇf BIPOËAR/ RANDOMí ACCES£|MEMOF@É MBM 100474A-5 MBM 100474A-7 June 1987 Edition 1.Û 4096-BIT BIPOLAR ECL RANDOM ACCESS MEMORY The Fujitsu MBM 100474A is fu lly decoded 4096-bit ECL read/write random

BT35F

Abstract: dfig
Contextual Info: PANASONIC INDL/ELEK -CIO 72 DEI b c1 3 2 ü 5 2 □ 0 0 t i 2 7 c] B . \ 6932852 PANASONIC I N D L . E L E C T R O N IC ~ . .— 72C C $ 2 7 9 • JDf. T -4 6 -2 3 -0 8 MÑ2Í48H-5rMÑTÍ48H-7j~MÑ2148H-8 M N2148H-5, MN2148H-7, MN2148H-8 Ä Ä H -yh

u3844

Abstract: 166Q P4C168 P4C169 P4C170
Contextual Info: PERFORMANCE SEMICONDUCTOR SOE D • TObeS^? ÜD01fl2fl Qfl3 « P S C P4C168, P4C169, P4C170 ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS SCRAMS FEATURES Three Options - P4C168 Low Power Standby Mode - P4C169 Fast Chip Select Control - P4C170 Fast Chip Select, Output Enable

1S21

Abstract: P4C150
Contextual Info: PERFORMANCE SEMICONDUCTOR 5 DE D • TDbESI? □ □ □ 1 Ô G 4 b^T « P S C P4C150 ULTRA HIGH SPEED 1K x 4 RESETTABLE STATIC CMOS RAM SCRAM FEATURES ■ Full CMOS, 6T Cell Three-State Outputs ■ High Speed (Equal Access and Cycle Times) -10/12/15/20/25 ns (Commercial)

93L422

Abstract: P93U422 QQQ177S p4c422 data
Contextual Info: PERFORMANCE SEMICONDUCTOR 5ÜE 7Gb£?5T7 D 0 0 1 7 7 4 0Ô5 « P S C P93U422 HIGH SPEED 256 x 4 CMOS STATIC RAM FEATURES CMOS for Low Power — 440 mW Commercial — 495 mW (Military) • Universal 256 x 4 Static RAM ■ One part, the 93U422, replaces the following

r1329i1

Abstract: CY7C150 HW* 2308
Contextual Info: GOGbMia R cacYP MtiE D CYPRESS SEMICONDUCTOR T - % '- L V 0 & _CY7C150 WÆ CYPRESS SEMICONDUCTOR 1024 x 4 Static R/W RAM Features Functional Description • Memory reset function • 1024 x 4 static RAM for control store In high-speed computers