am27s07
Contextual Info: Am27LS06/27LS07 64-Bit Low-Power Noninvsrting-Output Bipolar RAM DISTINCTIVE CHARACTERISTICS • • • • Fully decoded 16-word x 4-bit low power Schottky RAMs Internal ECL circuitry for optimum speed/power perfor mance over voltage and temperature Output preconditioned during write to eliminate the write
|
OCR Scan
|
am27ls06/27ls0764-bit16-wordam27ls07+4am27ls06wf001110am27s07a/07am27s07
|
PDF
|
27ls06
Contextual Info: Am27LS06/27LS07 64-Bit Low-Power Noninverting-Output Bipolar RAM DISTINCTIVE CHARACTERISTICS • • • Fully decoded 16-word x 4-bit low power Schottky RAMs Internal ECL circuitry for optimum speed/power perfor mance over voltage and temperature Output preconditioned during write to eliminate the write
|
OCR Scan
|
am27ls06/27ls0764-bit16-wordam27ls07+3am27ls06mil-std-88327ls06
|
PDF
|
27ls07
Abstract: 27ls06
Contextual Info: Am 27LS06/27LS07 64-Bit Low-Power Noninverting-Output Bipolar RAM • Available with three-state outputs Am27LS07 or with open collector outputs (Am27LS06) Electrically tested and optically inspected die for the assemblers of hybrid products • GENERAL DESCRIPTION
|
OCR Scan
|
am27ls06/27ls0764-bit16-wordam27ls07+4am27ls06mil-std-88327ls0727ls06
|
PDF
|
16x4
Abstract: 16384x1 ram
Contextual Info: Bipolar Memory Bipolar Memory RAM Functional Index and Selection Guide Part Number RAM B IP O L A R E C L R A M A c c e s s Tim e Iee C O M ’ L/M IL C O M ’L/M IL O rganization Max Max ECL Serie« Number o f P in s Packages -1 5 0 /-1 6 5 10K 16 d ,p ,f ,l
|
OCR Scan
|
am10415saam10415a104l5am100415a+8am100415am10470sa0470aam10470100470sam100470a16x416384x1 ram
|
PDF
|
cq 721
Abstract: am26ls31 27LS00 TRANSISTOR SUBSTITUTION Amdasm am2911pc 25S558 STK 025 power amplifier GE semiconductor data handbook am29811adc-b
Contextual Info: í i í i í i n z ta a a a a a a a a a a a r n a a a a a a a a a a a a a i: 33a a a a a a n a a a a a ; a a a a a a a a n a a iia a r r ia a a a a a n a a iia a a r l a n g a s í i í i í i * i¿ w n r w a s a jn sü n n a n a n n n n íiíi íiíiíi n n s n n n
|
OCR Scan
|
f-28-2f-42-1f-48-2cq 721+9am26ls3127ls00transistor substitutionamdasmam2911pc25s558stk 025 power amplifierge semiconductor data handbookam29811adc-b
|
PDF
|
74LS189 equivalent
Abstract: 74LS200 AmZ8036 Z8104 74LS300 AM9511 Am2505 27s13 54S244 27LS00
Contextual Info: Advanced Micro Devices Condensed Catalog 1981 Advanced Micro Devices, Inc. Advanced Micro Devices reserves the right to make changes in its products without notice in order to improve design or performance characteristics. The company assumes no responsibility for the use of any circuits described herein.
|
OCR Scan
|
amd-599lm101sn54ls01132nd+1074ls189 equivalent74ls200amz8036z810474ls300am9511am250527s1354s24427ls00
|
PDF
|
TCA965 equivalent
Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
Contextual Info: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated
|
OCR Scan
|
dg211dg300dg308tca965 equivalent+9uln2283capacitor 473j 100nuaf771transistor gdv 65apbd352303cm2716taa2761taa4761uln2401
|
PDF
|