CASE14 Search Results

VTB5050J

Abstract: VTB5051J 5051j
Contextual Info: 5bE D 3 D 3 D b O cl 0 0 0 1 0 M 2 VTB Process Photodiodes E G 8> 6 521 VCT VTB5050J, 5051J VACTEC PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE14A Planarsilicon photodiode in a “flat" win­ dow, three lead TO-5 package. Chip is isolated from the case. The third lead

Contextual Info: 303Db 0T 0 0 0 1 0 4 4 3T4 • VCT SbE D VTB5050UVJ, 1UVJ VTB Process Photodiodes 4 1 -S I E G & 6 VACTEC PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE14A Planarsilicon photodiode in a three lead TO-5 package with a UV transmitting "flat" window. Chip is isolated from

VTB5050J

Abstract: VTB5051J VTB505U 5051J PIR 320 Vactec 25 PIR 148
Contextual Info: BQBQbO'î 0001042 521 « V C T 5bE » VTB Process Photodiodes V T B 5 0 5 0 J , 5 0 51 J E 6 & 6 VACTEC PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE14A Planarsilicon photodiode in a “fla f win­ dow, three lead TO-5 package. Chip is isolated from the case. The third lead

powec rm 1110

Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor

IVA14208ST

Contextual Info: • 4447504 D01D332 T23 H H P A HEWLETT-PACKARD/ CMPNTS blE D W A ffi H E W LETT 1 "H A P A CK A R D Silicon Bipolar MMIC 2.5 GHz Variable Gain Amplifier Technical Data IVA-14208 IVA-14228 Features • Differential Input and Output Capability • DC to 2.5 GHz Bandwidth;

MLED96

Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
Contextual Info: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B

Contextual Info: f J B l HEW LETT WSEM P A C K A R D Silicon Bipolar MMIC 2.5 GHz Variable Gain Amplifier Technical Data IVA-14208 IVA-14228 Features Description • Differential Input and Output Capability • DC to 2.5 GHz Bandwidth; 3.4 Gbits/s Data Sates • High Gain: 24 dB Typical

2N5641

Contextual Info: JBe-tnl-donduoioi Lpioducti, Una. fc/ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2N5641 The RF Line 7.0 W - 175MHz RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR . designed primarily for wideband large-signal amplifier stages in