CASE125 Search Results

r2 137

Abstract: REDRESSEMENT Diodes de redressement AC1501
Contextual Info: C B 33 (C B 34) Silic on rectifier diodes — N o rm a l series D iodes de redressement au silic iu m — Séries norm ales Type Case V RRM T (vj) (°C) Boîtier (V) rnax if s m VF / if IR ! V R R M (V) (A) (mA) (A) l0 < A ) tp 10 ms 25 ° C 25 o c max max

Contextual Info: CGH27030 30 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27030 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030

ve60

Contextual Info: 8U 536 HIGH VOLTAGE SILICON DATA SHEET TO-3 HPK POWER SWITCHING 8A; TRANSISTOR 75« SWITCH NODE CTV POWER SUPPLY APPLICATION ABSOLUTE MAXIMUM RATINGS ; Ì 3=25deg C SYHBOL VALUE UNIT Collector Emitter Voltage vers 1LOO V Collector Emitter isus) Voltage

Contextual Info: HR DATA HIGH VOLTAGE SILICON BU 536 POWER S«ITCHING TO-3 NP« SHEET 8A; TRANSISTOR 75« SWITCH MODE CTV POWER SUPPLY APPLICATION ABSOLUTE MAXIMUM RATINGS ; Ta=25deg C SVHBÖL VALUE UNIT Collector Emitter Voltage VCES 1100 V Collector Emitter (sus) Voltage

CGH27030

Abstract: 3-500z
Contextual Info: CGH27030 30 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27030 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030