CAS 316 Search Results

LTS 6-NP

Abstract: LTS 15-NP CAS 6-NP LTSR 15-NP LTSR 6-NP ch-1228 cksr6-np LTSR 25-NP CASR50-NP 743 LEM
Contextual Info: Technical Information CAS / CASR / CKSR series Current Transducers Insulated Highly Accurate Measurements from 1.5 to 50 ARMS CAS / CASR / CKSR series Current Transducers Future precision. Future performances. Now available. CAS / CASR / CKSR series Current Transducers

Contextual Info: K M 4 4 C 4 1 05B S ELECTRONICS CMOS D R A M 4 M x 4 Bit CMOS Quad CAS DRAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4bit Quad CAS with Extended Data Out Mode DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode.

400J

Contextual Info: SIEMENS 16M X 4-Bit Dynamic RAM 4k & 8k Refresh hYB 3164400J/T -50/-60 HYB 3165400J/T -50/-60 Prelim inary Inform ation 7.2 mW standby (TTL) 720 nW standby (MOS) _ Read, write, read-modify-write, CAS-beforeRAS refresh (CBR), RAS-only refresh, hidden refresh and self

Contextual Info: SIEM ENS 16 MBit Synchronous DRAM second generation HYB 39S16400/800/160AT-8/-10 Advanced Information • High Performance: CAS latency = 3 Multiple Burst Read with Single Write Operation -8 -10 Units 125 100 MHz Automatic and Controlled Precharge Command

GG12

Contextual Info: DALLAS SEMICONDUCTOR DS2181A CEPT Primary Rate Transceiver PIN ASSIGNMENT FEATURES • Single-chip primary rate transceiver meets CCITT standards G.704, G.706 and G.732 • Supports new CRC4-based framing standards and CAS and CCS signalling standards TMSYNC

Contextual Info: Product: XRT83VSH316IB-F Package: 316L L‐fpBGA 21x21 Material Declaration Statement of Materials, Construction Material Component Material Weight % Name Weight (g) Element/Compound CAS No. 1 Die 0.0360 Silicon 7440‐21‐3 0.0360

NT1GC64B88A0NF-CG

Abstract: JESD51-2 DDR3 85 ddr3 connector PCB footprint NT1GC64B88A0NF 240 unbuffered DDR3
Contextual Info: NT1GC64B88A0NF / NT2GC64B8HA0NF 1GB: 128M x 64 / 2GB: 256M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SDRAM DIMM Based on DDR3-1066/1333 128Mx8 SDRAM A-Die Features •Performance: Speed Sort DIMM CAS Latency fck – Clock Freqency PC3-8500 PC3-8500 PC3-10600

Contextual Info: Introduction MODELE Raccordements MODE D’EMPLOI Installation PG-F312X PG-F262X PG-F212X Mise en route rapide PROJECTEUR DE DONNEES Opération de base Fonctions pratiques Appendice REMARQUE IMPORTANTE • Pour vous aider à retrouver votre projecteur en cas de perte ou de vol,

RR 113001

Abstract: 1M16E5
Contextual Info: Advance information •■ AS4VC1M16E5 A 2.5V lM x 16 CMOS lntelliwatt,v DRAM EDO Features 1 1024 refresh cycles, 16 ms refresh interval • Organization: 1,048,576 words x 16 bits • High speed - RAS-only or CAS-before-RAS refresh or self refresh 1Read-modify-write

Silicon Magic

Abstract: SM81L256K32AL-35S
Contextual Info: Silicon SM81L256K32A MAGIC 256K x 32 EDO DRAM 256K x 32 EDO DRAM 3.3 Volt, 66 / 83 MHz Features < 262,144-Word by 32-Bit organization < Single +3.3V ± 0.3V power supply < 512 refresh cycles / 8 ms < Refresh modes: RAS-only, CAS-before-RAS CBR and Hidden

Contextual Info: WOM Material Safety Data Sheet Material Content Declaration Material name Lead Wire 59.11% Substance name e.g. Copper Cu , Gold (Au) CAS no., if known Copper (Cu) 7440-50-8 Phosphorus (P) 7723-14-0 Arsenic (As) 7440-38-2 Tin (Sn) 7440-31-5 Oxygen (O) 7782-44-7

Contextual Info: DS2143/DS2143Q DALLAS SEMICONDUCTOR D S 2 1 4 3 /D S 2 1 4 3 Q E1 Controller FEATURES PIN ASSIGNMENT • E1/ISDN-PRI framing transceiver TCLK [ • Frames to CAS, CCS, and CRC4 formats • Parallel Control Port • Onboard two frame elastic store slip buffer

IN5334B

Abstract: a8wg
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM54260B MCM5L4260B MCM5V4260B Product Preview 256K x 16 CMOS Dynamic RAM Fast Page Mode - 2 CAS, 1 Write Enable The MCM54260B is a 0.6n CMOS high-speed dynamic random access memory. It is organized as 262,144 sixteen-bit words and fabricated with CMOS siiicon-gate

F245

Abstract: an6161 16L8D DP8422A an-6161 components combinational logic circuit AN61-61 AN-616 C1995 DP8420A
Contextual Info: National Semiconductor Application Note 616 Lawson H C Chang March 1989 INTRODUCTION This application note describes interfacing the DP8422A DRAM controller also applicable to DP8420A 21A to the 68020 with slower memories This design is based upon burst mode access by holding RAS low and toggling CAS It

V52C8128

Abstract: V52C8128-80
Contextual Info: MOSEL- VITELIC V52C8128 MULTIPORT VIDEO RAM WITH 128K X 8 DRAM AND 256 X 8 SAM HIGH PERFORMANCE V52C8128 70 PRELIMINARY 80 10 Max. RAS Access Time, tRAc 70 ns 80 ns 100 ns Max. CAS Access Time, (tcAc) 20 ns 25 ns 25 ns Max. Column Address Access Time, ( t ^ )

INTEL 450NX

Abstract: intel 8042 8042 intel kbc intel G31 circuit diagram LXG Series DIODE C04 06 intel 8042 port 64h pciset datasheet transistor w04 450GX
Contextual Info: intel  Intel 450NX PCIset 82454NX PCI Expander Bridge PXB 82453NX Data Path Multiplexor (MUX) 82452NX RAS/CAS Generator (RCG) 82451NX Memory & I/O Controller (MIOC) Revision 1.3 March 1999 Intel Corporation 1998, 1999 Information in this document is provided in connection with Intel products. No license, express or

Contextual Info: Advance information •■ AS4SC1M 16E5 A 1,8V 1M x 16 C M O S Intelliwatt1'' DRAM EDO Features • Organization: 1,048,576 words x 16 bits • High speed • 1 0 2 4 refresh cycles, 16 m s refresh interval - RAS-only or CAS-before-RAS refresh or self refresh

13001 LZ

Abstract: SR 13001 PA 13001
Contextual Info: Advance information •■ II AS4VC1M16E5 2.5V 1Mx 16 CMOS lntelliwatt,v DRAM EDO Features • Organization: 1 ,0 4 8 ,5 7 6 w ords • H igh speed X • 10 24 refresh cycles, 16 m s refresh interval 16 bits - RAS-only or CAS-before-RAS refresh or self refresh

Contextual Info: SIEMENS 4M X 4-Bit Dynamic RAM HYB 5116400BJ -50/-60/-70 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 "C operating temperature • Performance: -50 -60 -70 50 60 70 ns ns Í rac RAS access time fcAC CAS access time 13 15 20 tpA

CY7C960

Abstract: CY7C964 MC68020
Contextual Info: 3.3 PREN* SWDEN* RAS*/CS4 CAS*/CS5 AM2 ROW/CS2 COL/CS3 AM1 GND DBE0 AM0 Vcc DBE1 DBE2 DBE3 R/W* Pin Description Pin 1 CY7C960 TQFP Top View LA7 LA6 LA5 LA4 IRQ* LA3 Gnd AM5 LA2 Vcc LA1 DS1* LA0 LDS DENIN1* LAEN DENO* IACKOUT* IACKIN* IACK* AS* LADI STROBE

Contextual Info: SIEMENS 1M X 32-Bit Dynamic RAM Module 2M X 16-Bit Dynamic RAM Module HYM 321160S/GS-60/-70 Advanced Information 1 048 576 words by 32-bit organization (alternative 2 097 152 words by 16-bit) CAS-before-RAS refresh, RAS-only-refresh, Hidden refresh Fast access and cycle time

Contextual Info: 1 M x 1 DRAM m olaic MDM11000-80/10/12/15 Issue 3.1 : October 1991 Pin Definitions Package Type: T.V 1,048,576 x 1 CMOS High Speed Dynamic RAM Features Row Access Times of 80,100/120/150 ns 5 Volt Supply ± 10% 512 Refresh Cycles 8 ms CAS before RAS Refresh

intel 8042

Abstract: 450GX 450NX 82451NX 82452NX 82453NX 82454NX CL-CK L10
Contextual Info: intel  Intel 450NX PCIset 82454NX PCI Expander Bridge PXB 82453NX Data Path Multiplexor (MUX) 82452NX RAS/CAS Generator (RCG) 82451NX Memory & I/O Controller (MIOC) Order Number: 243771-004 June 1998 Intel Corporation 1998 Information in this document is provided in connection with Intel products. No license, express or

Contextual Info: intoT 21256 262,144 x 1-BIT DYNAMIC RAM WITH PAGE MODE Parameter 21256-06 21256-07 21256-08 21256-10 Units tRAC Symbol Access Time from RAS 60 70 80 100 ns tCAC Access Time from CAS 20 20 20 50 ns tRC Read Cycle Time 110 130 150 190 ns • Page Mode Capability