CAPACITOR 1.8GHZ 100PF Search Results

LT5503

Abstract: LT5500 LT5500EGN LT5502 LTC5505 LTC5505-1 LTC5505-2
Contextual Info: Final Electrical Specifications LT5500 1.8GHz to 2.7GHz Receiver Front End December 2001 U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ The LT 5500 is a receiver front end IC designed for low voltage operation and is compatible with the LTC family of

LT5503

Contextual Info: Final Electrical Specifications LT5500 1.8GHz to 2.7GHz Receiver Front End December 2001 U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ The LT 5500 is a receiver front end IC designed for low voltage operation and is compatible with the LTC family of

LT5503

Contextual Info: LT5500 1.8GHz to 2.7GHz Receiver Front End DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ The LT 5500 is a receiver front end IC designed for low voltage operation. The chip contains a low noise amplifier LNA , a Mixer and an LO buffer. The IC is designed to

Contextual Info: FMS2028 FMS2028 SP6T GAAS MULTI-BAND GSM ANTENNA SWITCH Package Style: Bare Die NOT FOR NEW DESIGNS Product Description Features The FMS2028 is a low loss, high isolation, broadband single-pole six-throw Gallium Arsenide antenna switch. The die is fabricated using the FL05 0.5m switch process from RFMD that offers leading edge performance optimized for switch applications.

LT5503

Abstract: LT5500 LT5500EGN LT5502 LT5504 LTC5505 LTC5507 mixer diode L9
Contextual Info: LT5500 1.8GHz to 2.7GHz Receiver Front End U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ The LT 5500 is a receiver front end IC designed for low voltage operation. The chip contains a low noise amplifier LNA , a Mixer and an LO buffer. The IC is designed to

7474 truth table

Abstract: 7474 applications capacitor 1.8ghz 100pF 0402 gsm antenna switch
Contextual Info: FMS2028 FMS2028 SP6T GAAS MULTI-BAND GSM ANTENNA SWITCH Package Style: Bare Die NOT FOR NEW DESIGNS Product Description Features The FMS2028 is a low loss, high isolation, broadband single-pole six-throw Gallium Arsenide antenna switch. The die is fabricated using the FL05 0.5m switch process from RFMD that offers leading edge performance optimized for switch applications.

7474 truth table

Abstract: 65X65 MIL-HDBK-263 MICRO TX1 capacitor 1.8ghz 100pF 0402
Contextual Info: FMS2028 FMS2028 SP6T GAAS MULTI-BAND GSM ANTENNA SWITCH Package Style: Bare Die Product Description Features The FMS2028 is a low loss, high isolation, broadband single-pole six-throw Gallium Arsenide antenna switch. The die is fabricated using the FL05 0.5 m switch process from RFMD that offers leading edge performance optimized for switch applications.

rx 3152

Abstract: A1306 2Q394 IC LP7 A-1306 500R BFP405 BGC405 Q62702-G0091 RX82 equivalent
Contextual Info: BGC405 Self-Biased BFP405 l l l l l SIEGET25- Technology Small SCT598-Package Control Pin For Switching The Device Off Current Easy Adjustable By An External Resistor Voltage Independent Current 2V – 4.5V 8 7 6 5 2 1 3 4 VPW05982 ESD: Electrostatic discharge sensitive device, observe

2.1Ghz oscillator

Contextual Info: 19-1667; Rev 0; 4/00 1.8GHz to 2.5GHz Direct Downconversion Receivers ♦ Baseband Gain Offset Correction Loop ♦ +2.7V to +3.3V Single-Supply Operation ♦ Small 48-pin TQFP-EP Package Ordering Information PART MAX2700ECM TEMP. RANGE -40°C to 85°C MAX2701ECM

MAX2700

Abstract: MAX2700ECM MAX2701 MAX2701ECM
Contextual Info: 19-1667; Rev 0; 4/00 1.8GHz to 2.5GHz Direct Downconversion Receivers ♦ Baseband Gain Offset Correction Loop ♦ +2.7V to +3.3V Single-Supply Operation ♦ Small 48-pin TQFP-EP Package Ordering Information PART MAX2700ECM TEMP. RANGE -40°C to 85°C MAX2701ECM

MAX2700

Abstract: MAX2700ECM MAX2701 MAX2701ECM
Contextual Info: 19-1667; Rev 0; 4/00 1.8GHz to 2.5GHz Direct Downconversion Receivers ♦ Baseband Gain Offset Correction Loop ♦ +2.7V to +3.3V Single-Supply Operation ♦ Small 48-pin TQFP-EP Package Ordering Information PART MAX2700ECM TEMP. RANGE -40°C to 85°C MAX2701ECM

Contextual Info: 19-1667; Rev 0; 4/00 1.8GHz to 2.5GHz Direct Downconversion Receivers ♦ Baseband Gain Offset Correction Loop ♦ +2.7V to +3.3V Single-Supply Operation ♦ Small 48-pin TQFP-EP Package Ordering Information PART MAX2700ECM TEMP. RANGE -40°C to 85°C MAX2701ECM

BFP420 application notes 900MHz

Abstract: SCT598-Package BFP420 application notes BFP420 BGC420 Q62702-G0092 500R 134fF IC LP7 3770E-01
Contextual Info: BGC420 Self-Biased BFP420 l l l l l SIEGET25- Technology Small SCT598-Package Control Pin For Switching The Device Off Current Easy Adjustable By An External Resistor Voltage Independent Current 2V – 4.5V 8 7 6 5 2 1 3 4 VPW05982 ESD: Electrostatic discharge sensitive device, observe

2Q394

Abstract: rx 3152 BGC405 A12 marking ikr 251 50W rf power transistor 100MHz 500R BFP405 Q62702-G0091 TL18
Contextual Info: BGC405 Self-Biased BFP405 l l l l l SIEGET25- Technology Small SCT598-Package Control Pin For Switching The Device Off Current Easy Adjustable By An External Resistor Voltage Independent Current 2V – 4.5V 8 7 6 5 2 1 3 4 VPW05982 ESD: Electrostatic discharge sensitive device, observe

Contextual Info: RF1450 BROADBAND HIGH POWER SP4T SWITCH ̈ ̈ ̈ ̈ Applications ̈ ̈ ̈ ̈ Cellular Handset Applications Multi-Mode GSM, WCDMA Applications GSM/GPRS/EDGE Switch Applications Cellular Infrastructure Applications GND RF1 pHEMT Switch GND 1 Low Frequency - 2.5GHz

Contextual Info: RF1450 BROADBAND HIGH POWER SP4T SWITCH „ „ „ „ High Linearity: IMD <-115dBm Excellent Harmonic Performance: -80dBc at 1GHz GaAs pHEMT Process Applications „ „ „ „ Cellular Handset Applications Multi-Mode GSM, WCDMA Applications GSM/GPRS/EDGE Switch

Contextual Info: RF1450 BROADBAND HIGH POWER SP4T SWITCH „ „ „ „ High Linearity: IMD <-115dBm Excellent Harmonic Performance: -80dBc at 1GHz GaAs pHEMT Process Applications „ „ „ „ Cellular Handset Applications Multi-Mode GSM, WCDMA Applications GSM/GPRS/EDGE Switch

Contextual Info: RF1450 SP4T SWITCH „ „ GND RF1 13 pHEMT Switch GND 1 12 GND VDD 2 11 ANT CTRL2 3 10 GND CMOS Decoder CTRL1 4 5 6 9 GND 7 8 RF3 „ 14 GND „ 15 RF4 „ Low Insertion Loss 0.4dB @ 1GHz High Isolation 29dB @ 1GHz VDD =2.5V to 2.85V, Down to 1.8V with Reduced Specifications

RF1450

Abstract: RF1450PCBA-410
Contextual Info: RF1450 BROADBAND HIGH POWER SP4T SWITCH „ „ „ „ High Linearity: IMD <-115dBm Excellent Harmonic Performance: -80dBc at 1GHz GaAs pHEMT Process Applications „ „ „ „ Cellular Handset Applications Multi-Mode GSM, WCDMA Applications GSM/GPRS/EDGE Switch

Contextual Info: CSY210 GaAs MMIC P r e l i m i n ar y D a t a s h e e t *TX/RX- and diversity switch for mobile communications *High input power capability 36dBm P_1dB @ 3V

RT4350

Contextual Info: FMS2014QFN Preliminary Data Sheet 2.2 High Power GaAs SPDT Switch Features: ♦ ♦ ♦ ♦ ♦ ♦ Functional Schematic 3x3x0.9mm Packaged pHEMT Switch Excellent low control voltage performance Excellent harmonic performance under GSM/DCS/PCS/EDGE power levels

Contextual Info: FMS2014-001 Data Sheet 4.0 High Power GaAs SPDT Switch Features: ♦ ♦ ♦ ♦ ♦ ♦ Functional Schematic 3x3x0.9mm Packaged pHEMT Switch Excellent low control voltage performance Excellent harmonic performance under GSM/DCS/PCS/EDGE power levels Very high Tx-Rx isolation: >28dB typ. at

FMS2014-001

Abstract: FMS2014-001-EB FMS2014QFN MIL-HDBK-263
Contextual Info: FMS2014QFN Preliminary Data Sheet 2.1 High Power GaAs SPDT Switch Features: ♦ ♦ ♦ ♦ ♦ ♦ Functional Schematic 3x3x0.9mm Packaged pHEMT Switch Excellent low control voltage performance Excellent harmonic performance under GSM/DCS/PCS/EDGE power levels

FMS2014QFN

Contextual Info: FMS2014-001 FMS2014-001 High Power GaAs SPDT Switch HIGH POWER GaAs SPDT SWITCH NOT FOR NEW DESIGNS Package: 3mmx3mm QFN Product Description Features Optimum Technology Matching Applied „ „ „ ANT GaAs HBT GaAs MESFET „ InGaP HBT V2 DE V1 SiGe BiCMOS