CAJ 15 Search Results

Contextual Info: SDR623CTJ, CAJ, DJ, DRJ thru SDR626CTJ, CAJ, DJ, DRJ Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 40 AMPS 300 - 600 VOLTS 35 nsec HYPER FAST CENTERTAP RECTIFIER

Contextual Info: SDR623CTJ & CAJ thru SDR625CTJ & CAJ SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Designer's Data Sheet FEATURES: • Hyper Fast Recovery: 35nsec Maximum

SDR623CTJ

Abstract: SDR623CTJDB SDR624CTJ SDR624CTJDB SDR624CTJUB SDR625CTJ SDR625CTJUB common anode 600v
Contextual Info: SDR623CTJ, CAJ, DJ, DRJ thru SDR626CTJ, CAJ, DJ, DRJ Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 40 AMPS 300 - 600 VOLTS 35 nsec HYPER FAST CENTERTAP RECTIFIER

anode common fast recovery diode

Abstract: Rectifier 6 amp 200 volt 1N5816 SDR620CTJ SDR621CTJ SDR622CTJ DOUBLER Diode 200v hyper fast diode
Contextual Info: SDR620CTJ, CAJ, DJ, DRJ thru SDR622CTJ, CAJ, DJ, DRJ Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 40 AMPS 100 - 200 VOLTS 35 nsec HYPER FAST CENTERTAP RECTIFIER

anode common fast recovery diode

Abstract: common anode 600v SDR624CTJ SDR623CTJ SDR623CTJDB SDR624CTJDB SDR624CTJUB SDR625CTJ SDR625CTJUB
Contextual Info: SDR623CTJ, CAJ, DJ, DRJ thru SDR626CTJ, CAJ, DJ, DRJ Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 40 AMPS 300 - 600 VOLTS 35 nsec HYPER FAST CENTERTAP RECTIFIER

Contextual Info: R EV ISIO N S GSD ER 34274 KH 11/20/92 C*i CO o CN 34662 C JCA 05/25/93 1^0 cn <r> CN 35318 C KH 02/08/94 l CaJ O O CO NOTES: 1. FOR USE WITH M17/28-RG058, /60-RG142, /84-RG223, /155-00001, /158-00001 k /1 67-00001 CABLES. 2. FOR CABLING INSTRUCTIONS SEE 3-519.

Contextual Info: S P E C I F I C A T I O N T E N T A T I VE DEVICE NAME : TYPE NAME : SPEC. No. : Power MOSFET 2 S K 2 7 5 8 - 0 1 L. S F u j i E l e c t r i c Co., Ltd. This Specification is subject to change without notice. DATE NAME APPROVED 1 ' . . 5 Fuji Electric CaJ-td

Contextual Info: S P E C I F I C A T I O N T E N T A T IVE DEVICE NAME : TYPE NAME : Power MOSFET 2 S K 2 7 5 5 - 0 1 SPEC. No. Fuji E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DATE NAME APPROVED Fuji Electric CaJ-td. DRAWN CHECKED o

Contextual Info: EDP NO. DIMENSIONS IN METRIC DO NOT SCALE DRAWING ENG. NO S D -5 10 1 0 -* * 1* CJl ft3-r *hr 3£ 2ft i* 5 jC. S* r+i g c5 vi m - vj - a TIM SM z3 SM 22.4 ~n 85 12.4 v*_,SC 7 J- a i iv> t i l gm s mLf ; m 3*1 zo an m zdM S5 E# sa 0 -c^ cn ro CaJ i# ^3 UKe

cd 7404

Abstract: CD 4039 AE BERG 65801 7912 ic CD 4039 e
Contextual Info: r M rights strictly reserved. Reproduction or issue to third porties in any form whatever is not permitted without written authority from the proprietor. Property of BERG ELECTRONICS B _ .E _R G ic •LICTHONICS Copyright BERG ELECIROMCS INC. Tous droits strictement reserves.

Contextual Info: KM4216C/V256 CMOS VIDEO RAM 256K X 16 Bit CMOS Video RAM The RAM array consists of 512 bit rows of 8192 bits. It operates like a conventional 256K x 16 CMOS DRAM. The RAM port has a write per bit mask capability. Data may be written with New and Old Mask. The RAM port

a473

Abstract: MA020 A-473 ESAC87-009 SC-65 esac87 CC180
Contextual Info: ESAC87-009H6A i Outline Drawings SC H O TTKY B A R R IE R DIODE ^3.2±o ' 15 . 5 maj i 5iC * 13.0 , JU / r" H S f- -2.0 ! T.Zto 1 ' m CD GÌ) 0.5- ' Features JEDEC • te V F EIAJ Low VF SC-65 • x -r Super high speed sw itch in g . • R tt Connection Diagram

Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 3 8 I HIGH PO W ER SW ITCH IN G APPLICATIONS. U n it in mm H A M M E R DRIVE, PULSE M O T O R DRIVE APPLICATIONS. # 3 -2 ±0 .2 • w - High DC C urren t Gain : hpE = 1500 Min. (Vc e = - 3V, I c = - 2 .5 A ) • Low S aturation Voltage : V C E (sat)= —1.5V (Max.) ( I c = —2.5A)

6K4P

Contextual Info: 8 7 6 5 4 DWG NO. 3 C—4 7 3 —5 1 0 0 —500 ▼ ZONE REV -z SCR NO. 40534 5.41 B 03.00 > 00.20 D® n U A K X 2 .0 0 1 = L « REV J SH 0.55 D SEE TABLE 1 H DATE APPROVED NEW RELEASE SG 11/20/02 K.LEBLANC ADDED DIM P TO TABLE 1 SG 4 0 88 2 ADD NOTE 6 & TABLE 4

Contextual Info: ESAD95-04 20A f l Outline Drawing lo w lo s s s u p e r high speed r e c t i f i e r • Connection Diagram ■ Features • Lo w V f • Super high speed switching • High reliability by planer design ■ Applications • High speed power switching H Maximum Ratings & Characteristics

ERC35

Contextual Info: ERC35 2 .5A Outline Drawings FAST RECOVERY DIODE : Features : Marking Soft recovery, low noise • iftflfS te A5 —3 —K : t& High reliability Color code ‘ Silver & : Applications Abridged type name 'ŒEi' 5* AV-K-?-? Voltage class a y Ufa High speed sw itch in g .

rcj60

Abstract: A-494 ESAC83-004 H125 SC-65 esac83 A494
Contextual Info: ESAC83-004 2oa SCHOTTKY BARRIER DIODE • t t J t : Features • 1&VF Low VF Super high speed switching. •7u-*-«HR=«»flmit Connection Diagram High reliability by planer design. w\ I A p p lic a tio n s c3 High speed power switching. CD cD M a x im u m Ratings and C h a ra c te ris tics

Contextual Info: ; A¥S FOLC-120-02-S-Q 6 *0 « 1.27mm x 1,27mm} .050" x .050" micro pilch L e w Insertion S P E C IF IC A T IO N S contacts available Mates wr High reliability Materials: Tiger-Eye contacts In su lator M aterial: Black Liquid Crystal Polym er C ontact M aterial: Be

sc802

Contextual Info: I' SC802-06 i < ' 7 Ÿ 4 *-\r • W i» : Outline Drawings S C H O T T K Y B A R R IE R D IO D E * iS a Ü 135la* Z HW. => (as J~Ï35* 135’ m J 12" 5.1-OJ : Features JEDEC Surface mount device EIAJ • <ftVF Low V F : Marking Super high speed switching.

A309

Abstract: ESAD92M-03 st a309
Contextual Info: ESAD92M-03 2oa x±>ì'wnt4*-v : Outline Drawings LOW LOSS SUPER HIGH SPEED RECTIFIER ; Features • t t W W iB A 'I f t lii In su la ted packa g e by fu lly m o ld in g . • te V F Low V K Connection Diagram S u p e r h ig h speed s w itc h in g . • 7V —

911S2

Abstract: g911s
Contextual Info: Y G 9 1 1 S 2 e a LOW LOSS SUPER HIGH SPEED RECTIFIER ; F e a tu re s Insulated package by fully m o ld in g . • V„ Low V K m m m m C onnection D iagram S u p e r h igh speed s w itc h in g , High reliability by planer d e sig n . *. A p p lica tio n s

A445

Abstract: PM 4A
Contextual Info: YG802C06HOA SCHOTTKY BARRIER DIODE : Features Insulated p ac ka g e b y fully m o ld in g . • te V F m m & m L ow V k Connection Diagram S u p e r h ig h speed s w it c h in g . • •fi'-i—mmz'thMiztote H ig h reliability by planer d es ig n. : Applications

12OG

Abstract: 2-21A1A
Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA T b <D IS C R E T E / O P T O ' ‘ SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS) DE J t U H T S S O T 2SC1195 5òC 07442 rrH HIGH VOLTAGE SWITCHING APPLICATIONS. 1 - CO h - i- 4 - -+ 0.09

IMU gy 80

Contextual Info: 6MBI15L-060 15A ; ± / n° 9 : Outline Drawings \ G & T = E > d. - ) V IGBT MODULE ! Features • • tefi&inWJl High Speed Switching Low Saturation Voltage • f t A i3 *f— H£iit(M OS'>1— h fllifi) High Input Impedance • ¿> Module Packaging : Applications