CAC P60 Search Results

428169

Abstract: Texas Instrument 4203
Contextual Info: TMS416169, TMS416169P, TMS418169, TMS418169P TMS426169, TMS426169P, TMS428169, TMS428169P 1048576-WORD BY 16-BIT EXTENDED DATA OUT HIGH-SPEED DRAMS SMKS888A - APRIL 1995 - REVISED JUNE 1995 ACCESS ACCESS ACCESS READ OR TIME TIME TIME EDO CYCLE «BAC *CAC ‘AA

Contextual Info: Features Preliminary Datasheet Specifications in this document are tentative and subject to change. RX64M Group Renesas MCUs R01DS0173EJ0090 Rev.0.90 Feb 28, 2014 120-MHz 32-bit RX MCU, on-chip FPU, 240 DMIPS, up to 4-MB flash memory, 512-KB SRAM, various communications interfaces including IEEE 1588-compliant Ethernet MAC,

Contextual Info: Features Datasheet RX64M Group Renesas MCUs R01DS0173EJ0100 Rev.1.00 Jul 31, 2014 120-MHz 32-bit RX MCU, on-chip FPU, 240 DMIPS, up to 4-MB flash memory, 512-KB SRAM, various communications interfaces including IEEE 1588-compliant Ethernet MAC, full-speed USB 2.0 with battery charging, SD host interface optional , quad SPI, and CAN, 12-bit A/D

TP-128

Contextual Info: Features DATASHEET RX63T Group Renesas MCUs R01DS0087EJ0200 Rev.2.00 Mar 11, 2013 100-MHz 32-bit RX MCU, on-chip FPU, 165 DMIPS, Two 12-bit ADCs three S/H circuits, double data registers, amplifier, comparator , one 10-bit ADC, simultaneous sampling on 7 channels using three ADCs, 100 MHz PWM (2 three-phase complementary channels + 4 single-phase

R5F563T6EGFM

Contextual Info: Features DATASHEET RX63T Group Renesas MCUs R01DS0087EJ0210 Rev.2.10 Sep 26, 2013 100-MHz 32-bit RX MCU, on-chip FPU, 165 DMIPS, Two 12-bit ADCs three S/H circuits, double data registers, amplifier, comparator , one 10-bit ADC, simultaneous sampling on 7 channels using three ADCs, 100 MHz PWM (2 three-phase complementary channels + 4 single-phase

21D8

Contextual Info: TMS416800, TMS416800P 2 097152 WORD BY 8-BIT DYNAMIC RANDOM-ACCESS MEMORIES S M K S 6 8 0 -D E C E M B E R 1 9 9 2 Performance Ranges: ACCESS ACCESS ACCESS READ TIME TIME TIME OR WRITE <‘ RAC MAX) («CAC) (MAX) (*AA) (MAX) 15 ns 30 ns CYCLE (MIN) '416800/P-60

Hitachi "J suffix"

Contextual Info: TMS464400/P 16777216-WORD BY 4-BIT TMS464800/P 8388608-WORD BY 8-BIT TMS464160/P 4194304-WORD BY 16-BIT DYNAMIC RANDOM-ACCESS MEMORIES SMWS003A - MARCH 199S - REVISED JUNE 1995 All Inputs, Outputs, and Clocks Are LVTTL Compatible This data sheet is applicable to all

CAC P60

Contextual Info: TMS427400, TMS427400P 4194 304-WORD BY 4-BIT LOW-VOLTAGE DYNAMIC RANDOM-ACCESS MEMORIES SMKS274-JANUARY1993 DJ PACKAGEt TOP VIEW Organization . . . 4194 304 x 4 Single 3.3-V Power Supply (± 0.3 V Tolerance) V CC c 1 DQ1 : 2 DQ2 : 3 Low Power Dissipation (TMS427400P)

tcs-f

Contextual Info: TMS426100, TMS426100P 16777 216-BIT LOW-VOLTAGE DYNAMIC RANDOM-ACCESS MEMORY SMKS261-JANUARY1993 Organization . . . 16 777 216 x 1 DJ PA C K A G E t TOP VIEW Single 3.3-V Power Supply (±0.3-V Tolerance) 1 V CC [ Low Power Dissipation (TMS426100P Only) - 100 nA CMOS Standby

Contextual Info: TMS417809A, TMS427809A, TMS427809AP 2097152 BY 8-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES _ SMKSB94B - AUGUST 1996 - REVISED NOVEMBER 1997 This data sheet is applicable to a ll TMS417809As and TMS427809A/PS sym bolized by Revision “E " and subsequent

A11t

Contextual Info: TMS416400, TMS416400P, TMS417400, TMS417400P TMS426400, TMS426400P, TMS427400, TMS427400P 4194304-WORD BY 4-BIT HIGH-SPEED DRAMS SMKS881 A - MAY 1995 - REVISEDJUNE1995 Electrical characteristics for TM S416400/P and TM S417400/P is Production Data. Electrical

R5F5210BBDFP

Abstract: PTLG0145KA-A R5F5210BBGFP R5F5210ABDFP R5F52108BDFB CAC P60 R5F5210BBDLK SCK12 87P51 R5F5210BBGFB
Contextual Info: Preliminary Datasheet Specifications in this document are tentative and subject to change. RX210 Group 768-KB/1-MB flash memory or 144/145-pin packages Renesas MCUs 50-MHz 32-bit RX MCUs, 78 DMIPS, up to 1-MB flash memory, 12-bit A/D, 10-bit D/A, ELC, MPC, RTC, up to 15 comms channels;

R5F52108CGFP

Abstract: R5F52106BDLJ R5F52108CGFN R5F52106BDFM#30 R5F52108CDFP R5F52107CDFN#30
Contextual Info: Datasheet RX210 Group R01DS0041EJ0150 Rev.1.50 Oct 18, 2013 Renesas MCUs 50-MHz 32-bit RX MCUs, 78 DMIPS, up to 1-MB flash memory, 12-bit A/D, 10-bit D/A, ELC, MPC, RTC, up to 15 comms channels; incorporating functions for IEC60730 compliance Features PLQP0144KA-A 20 x 20 mm, 0.5-mm pitch

R5F5210BBDLK

Abstract: R5F52108CGFP PTLG0145KA-A rx210 R5F52108BDFB R5F52106ADFP SCI12 813Ah R5F5210BBGFB R5F52105BGFP
Contextual Info: Datasheet RX210 Group Renesas MCUs 50-MHz 32-bit RX MCUs, 78 DMIPS, up to 1-MB flash memory, 12-bit A/D, 10-bit D/A, ELC, MPC, RTC, up to 15 comms channels; incorporating functions for IEC60730 compliance Features R01DS0041EJ0140 Rev.1.40 Feb 19, 2013 PLQP0144KA-A 20 x 20 mm, 0.5-mm pitch

8W dynamo

Contextual Info: TMS417809A, TMS427809Â, TMS427809AP 2097152 BY 8-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES _ SMKS694B-AUGUST 1996 - REVISED NOVEMBER 1997 This data sheet is applicable to all TMS417809As and TMS427809A/Ps symbolized by Revision “E” and subsequent

20D17

Contextual Info: TMS416160A, TMS418160A TMS426160A, TMS426160AP, TMS428160A, TMS428160AP 1048576-WORD BY 16-BIT HIGH-SPEED DRAMS SMKS891B - AUGUST 1996 - REVISED MARCH 1997 DGE PACKAGE TOP VIEW This data sheet is applicable to all TMS41x 160As and TMS42x160A/Ps symbolized by Revision ‘E ” and subsequent

Contextual Info: TMS426400, TMS426400P 4194 304-WORD BY 4-BIT LOW-VOLTAGE DYNAMIC RANDOM-ACCESS MEMORIES SMKS264-JANUARY 1993 DJ PACKAGEt TOP VIEW Single 3.3-V Power Supply (± 0.3 V Tolerance) V CC [ DQ1 [ Low Power Dissipation (TMS426400P) - 100 pA CMOS Standby - 100 pA Self-Refresh

CHIP SM 4108

Contextual Info: I | TMS45160, TMS45160P 262144-WORD BY 16-BIT HIGH-SPEED DYNAMIC RAND0M-ACCESS MEMORIES SMHS1 SOD - AUGUST 1992 - REVISED JUNE 1995 This data sheet is applicable to all TMS45160/Ps symbolized with Revision “D" and subsequent revisions as described on page 4-113.

Contextual Info: TMS418160, TMS418160P 1 048 576-WORD BY 16-BIT HIGH-SPEED DYNAMIC RANDOM-ACCESS MEMORIES SMKS86O-OECEMBER 1992 Organization . . . 1 048 576 * Single 5-V Supply 10% Tolerance x 16 Performance Ranges: ACCESS ACCESS ACCESS READ OR TIME TIME TIME WRITE CYCLE

Contextual Info: TMS416160, TMS416160P 1 048 576-WORD BY 16-BIT HIGH-SPEED DYNAMIC RANDOM-ACCESS MEMORIES SMKS660-DECEMBER 1992 Organization. . . 1 048 576 x 16 RE P A C K A G E t DC P A C K AG E t TOP VIEW (TOP VIEW) Single 5-V Supply (10% Tolerance) '416160/P-60 '416160/P-70

s561a

Contextual Info: TMS44100, TMS441 OOP, TMS46100, TMS46100P 4194304-WORD BY 1-BIT DYNAMIC RANDOM-ACCESS MEMORIES SMHS561A - MARCH 1995 - REVISED JUNE 1995 Organization . . . 4194304 x 1 Single 5 V Power Supply, for TM S44100/P ±10% Tolerance Single 3.3 V Power Supply, for TM S46100/P

S566A

Abstract: tms45169 TMS45169DZ
Contextual Info: TMS45169, TMS45169P 262144-WORD BY 16-BIT HIGH-SPEED DYNAMIC RANDOM-ACCESS MEMORIES _ S M H S566A -JU LY 1 9 9 6 - REVISED JANUARY 1997 DZ PACKAGE TOP VIEW Organization . . . 262144 x 16 5-V Supply (±10% Tolerance) Performance Ranges: '45169/P-50

Contextual Info: K4S161622D-TI/P CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Industrial Temperature Revision 1.0 June 1999 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.0 Jun . 1999 K4S161622D-TI/P

Contextual Info: TMS416160, TMS416160P, TMS418160, TMS418160P TMS426160, TMS426160P, TMS428160, TMS428160P 1048576-WORD BY 16-BIT HIGH-SPEED DRAMS SMKS1BOA- MAY 1995 - REVISED JUNE 1995 D G EPAC KA G E ‘4xx160/P-60 ’4 0 160/P-70 '4xx160/P-80 A C C ESS A C C ESS A C C ESS READ OR