C55B Search Results

Contextual Info: BRIGHT LED ELECTRONICS CORP. BS-C55BJRI SINCE 1981 ● Features : 1. 0.56 inch 14.20mm Digit Height. 2. Continuous uniform segments. 3. Low power requirement. 4. Excellent characters appearance. 5. Solid state reliability. 6. Categorized for luminous intensity.

Contextual Info: BRIGHT LED ELECTRONICS CORP. BS-C55BJRI-B SINCE 1981 ● Features : 1. 0.56 inch 14.20mm Digit Height. 2. Continuous uniform segments. 3. Low power requirement. 4. Excellent characters appearance. 5. Solid state reliability. 6. Categorized for luminous intensity.

Contextual Info: •HYUNDAI SEMICONDUCTOR H Y M 5 8 1 O O O A S e rie s 1M x 8-bit CMOS DRAM MODULE DESCRIPTION The HYM581000A is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of two HY514400 in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.2^uF decoupling capacitor Is mounted for each DRAM.

Contextual Info: •HYUNDAI HYM536400B Series SEMICONDUCTOR 4M X 36-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM536400B is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of nine HY5116400 in 24/28 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0 .2 2ftF decoupling capacitor is mounted for each DRAM.

siemens 6XV1-830-0AH10

Abstract: clifton resolver thermocouple type K krupp PIC900 A52 opto sensor inductosyn 11brw-300 Siemens 9-pin sub-D pinout RD2 earth leakage relay Balluff absolute encoder
Contextual Info: PiC900 Hardware Manual Version 13.0 Giddings & Lewis Controls, Measurement and Sensing NOTE Progress is an ongoing commitment at Giddings & Lewis. We continually strive to offer the most advanced products in the industry; therefore, information in this document is subject to change without

Contextual Info: KM44C4003A, KM44C4103A CMOS DRAM 4 M x 4 Bit CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode Quad C 5 5 DRAMs. Fast Page Mode offers high speed random access of memory cells within the. same row. Refresh cycle 2K Ref. or 4K Ref. , access

kmm366f410b

Contextual Info: KMM366F400BK KMM366F410BK DRAM MODULE KMM366F400BK & KMM366F410BK EDO Mode without buffer 4Mx64 DRAM DIMM based on 4Mx4, 4K & 2K Refresh, 3.3V G EN ERA L D ESCRIPTIO N FEATURES The Samsung KMM366F40 1 OBK is a 4M bit x 64 Dynamic RAM high density memory module. The

uPD23C4000

Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A

Contextual Info: SwitchcrafY 1 / 4 ” SHIELDED PHONE JACKS, SF-Jacks SHORT FRAME JACKS, MINIATURE PHONE JACKS SWITCHCRAFT, INC. 5555 N. Elston Ave, • C hicago, II 60630 • 773 792-2700 • FAX: 773 792-2129 • www.switchcraft.com 1/ 4 " SHIELDED PHONE JACKS V - V 6 - 5 2 THREAD

MT339

Abstract: T13631 IPC-D-275 Design standard for Rigid Printed Boards and Rigid Printed Board Assemblies
Contextual Info: * Please visit the product pages on our website for the most up-to-date product information ABOUT SWITCHCRAFT, INC. Switchcraft, Inc. was established in 1946 to manufacture jacks, plugs and switches, from its original plant located on West Diversey Street in Chicago. The company moved

CN12B

Abstract: CN12A Phone Jack - O
Contextual Info: IDS 1/4" SHIELDED PHONE JACKS 3/ 8 -3 2 TH REA D 3 / 8 - 3 2 HEX. LOCXNUT C IS .M ] OliLW ASHER 7. I 4 [ 6 J 51 CN12A Shield is assembled as part of the jack; cover “snaps” into place. Shield is designed for Hi Z circuits. Mounting is through a 3/8" diameter hole in chassis/panel up to

hy5118164b

Contextual Info: “H Y U N D A I HY5118164B Series 1M x 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY5118164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HV5118164B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

DM9 normally closed

Abstract: SMC D-A93 smc - d-m9p d-f9pwv D-F9nW CD-P11 A96V SMC D-M9nWl D-M9PL CD-P12
Contextual Info: CAT.EUS20-184 A -UK ISO Standard [ISO 21287] Compact Cylinder Series C55 ISO Standard [ISO 21287] Compact Cylinder Series C55 ø20, ø25, ø32, ø40, ø50, ø63 How to Order Without auto switch C55 B 20 10 With auto switch CD55 B 20 10 M9B S Number of auto switches

Contextual Info: HYUNDAI HY 514400 B S eries 1Mx4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY514400B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. "Hie HY514400B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

SP 1191

Abstract: MT4C4256 TNC 24 mk 2 US Electric 45 U-RAI MT42C4064 TE55
Contextual Info: JAM 2 8 M IC R O N • MT42C4255 IICHNOKX.Y »NC VRAM 256K X 4 DRAM with 512 X 4 SAM FEATURES Industry standard pin out, timing and functions High performance CMOS silicon gate process Single +5V ±10% power supply Inputs and outputs are fully TTL and CMOS

RCA SK CROSS-REFERENCE

Abstract: LED Clock Display 94hb JP012S34B EHCAT62 WIRING diagram USB to rca CABLE MARKING C7F MIL-P-642 RF BASED HOME security SYSTEM ppt TT8642 mil spec relay catalog
Contextual Info: ABOUT SWITCHCRAFT, INC. Switchcraft, Inc. was established in 1946 to manufacture jacks, plugs and switches, from its original plant located on West Diversey Street in Chicago. The company moved to a larger facility at 1328 North Halsted Street in 1948, and

Contextual Info: ‘H Y U N D A I SEMICONDUCTOR H Y M 536200 Series 2M X 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536200 is a 2M x 36-bit Fast page mode CMOS DRAM module consisting of sixteen HY514400 20/26 pin SOJ and eight HY531000 in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.2^«F decoupling

Contextual Info: ><M y i l u n fi i H Y 5 1 V 4 4 1 O B S e r ie s 1M x 4-bit CMOS DRAM with Write-Per-Bit PREUMINARY DESCRIPTION The HY51V4410B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit with function of Write-Per-Bit. The HY51V4410B utilizes Hyundai's CMOS silicon gate process technology as well as advanced

Contextual Info: •HYUNDAI H Y 51V 18160B S eries 1M x 16-bit CM OS DRAM with 2CAS DESCRIPTION The HY51V18160B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY51V18160B utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques

pw3sd

Contextual Info: - H Y U N D A HY514403B Series I 1M x 4-bit CMOS DRAM with 4CAS DESCRIPTION The HY514403B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514403B has four CASs CAS0-3 which control corresponding data I/O port in conjunction with OE(eg. CASO) controls DQO,

circuit diagram of ic 7493

Abstract: ic 7493 block diagram pin diagram of ic 7493 HY531000 HY531000S of IC 7493
Contextual Info: HY531000 S e rie s »H YUND AI IM X 1-bit CMOS DRAM DESCRIPTION The HY531000 is the new generation and fast dynamic RAM organized 1,048,576 x 1-bit. The HY531000 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

PI-38

Contextual Info: •HYUNDAI HYM594000B Series SEMICONDUCTOR 4M X 9-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM594000B is a 4M x 9-bit Fast page mode CM O S DRAM module consisting of two HY5117400 in 24/28 pin SO J and one HY514100A in 20/26 pin SO J on a 30 pin glass-epoxy printed circuit board. 0.22nF decoupling

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

KMM5321000CV-7

Abstract: e5c5 KMM5321000
Contextual Info: DRAM MODULE 4 Mega Byte KMM5321OOOCV/CVG Fast Page Mode 1Mx32 DRAM SIMM, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5321000CV is a 1M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5321000CV consists of eight CMOS 1Mx4bit DRAMs in 20-pin SOJ packages mounted on