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    HYM5361

    Abstract: HYM536100AMG hym536100
    Contextual Info: " H Y U N D A I SEMICONDUCTOR H Y M 5 3 6 1 0 0 A S e r ie s 1M x 36-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM536100Ais a 1M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board, 0.22 iFdecoupling


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    36-bithym536100aishy514400ahy531000a+8hym536100am/almhym536100amg/almg1cc04-00-maywhym536100a1cc04-00-may93hym5361hym536100amghym536100 PDF

    Contextual Info: •HYUNDAI HYM581000B Series SEMICONDUCTOR 1M x 8-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM581000B is a 1M x 8-brt Fast page mode CMOS DRAM module consisting of two HY514400A in 20/26 pin SOJ on a 30 pin giass-epoxy printed circuit board. 0.2^/F decoupling capacitor is mounted for each DRAM.


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    hym581000bhy514400ahym581000bm/blm1bb0fr40-m+21bb05-00-m1bb05-00-may93 PDF

    D0200

    Contextual Info: " H Y U N D A I SEMICONDUCTOR H Y M 5 8 1 6 1 0 S e r ie s 16M X 8-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM581610 is a 16M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY5117100 in 24/28 pin SOJ or TSOP-II on a 30 pin glass-epoxy printed circuit board. 0.22nF decoupling capacitor is mounted for


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    hym581610hy5117100hym581610m/lm/tm/ltmhym581610tm/ltm+6251max1bd02-00-mahym581610mhym581610lmhym581610tmd0200 PDF

    HYM536200AM

    Abstract: HYM536200A HYM536200AM/ALM WE005 HYM536200Aibm pc 700M/ALM
    Contextual Info: •HYUNDAI SEMICONDUCTOR HYM536200A Series 2M X 36-blt CM O S DRAM MODULE PRELIMINARY DESCRIPTION The HYM536200A is a 2M x 36-bit Fast page mode C M O S DRAM module consisting of sixteen HY514400A in 20/26 pin SO J and eight HY531000A in 20/26 pin SO J on a 72 pin glass-epoxy printed circuit board, 0.2^uF decoupling


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    hym536200a36-blt36-bithy514400a+8hy531000ahym536200am/almhym536200amg/almg11cd04-00-may9336200ahym536200amwe005hym536200aibm pc 700m/alm PDF

    Contextual Info: •HYUNDAI SEMICONDUCTOR HYM581600 Series 16M X 8-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM581600 is a 16M x 8-bit Fast page mode C M O S DRAM module consisting of eight HY5116100 in 24/28 pin SO J or TSOP-II on a 30 pin glass-epoxy printed circuit board. 0.22|iF decoupling capacitor is mounted for


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    hym581600hy5116100hym581600m/lm/tm/ltm1bd01-00-may93+4hym58160hym581600tm/ltm251max01-00-m PDF

    HYM591000AM

    Abstract: bb04 HY531000
    Contextual Info: •HYUNDAI SEMICONDUCTOR HYM591000A Series 1M x 9-bit CMOS DRAM MODULE DESCRIPTION The HYM591000A is a 1M x 9-bit Fast page mode CM O S DRAM module consisting of two HY514400 and one HY531000 in 20/26 pin SO J on a 30 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted


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    hym591000ahy514400hy531000hym591000am+4twchf31bb04-20-m04-20-mbb04 PDF

    Contextual Info: ‘H Y U N D A I SEMICONDUCTOR H Y M 536200 Series 2M X 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536200 is a 2M x 36-bit Fast page mode CMOS DRAM module consisting of sixteen HY514400 20/26 pin SOJ and eight HY531000 in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.2^«F decoupling


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    36-bithym536200hy514400hy531000+4hym536200mhym536200mg1cd02-20-may934b750 PDF

    Contextual Info: HYUNDAI HYM591000C Series SEMICONDUCTOR 1M x 9-blt CMOS DRAM MODULE DESCRIPTION The HYM591000C Is a 1M x 9-bit Fast page mode CMOS DRAM module consisting of nine HY531000A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22/iF decoupling capacitor is mounted for each DRAM.


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    hym591000chy531000a22/ifhym591ooocm/clm+31bb08-10-mayw4b75007iv7b1 PDF

    HYM591000

    Contextual Info: HYUNDAI H Y M 5 9 1 0 0 0 A SEMICONDUCTOR S e r ie s 1M x 9-bit CMOS DRAM MODULE DESCRIPTION The HYM591000A is a 1M x 9-bit Fast page mode CM O S DRAM module consisting of two HY514400 and one HY531000 in 20/26 pin SO J on a 30 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted


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    hym591000ahy514400hy531000hym591000am+40177g1bb04-20-m0qg1771hym591000 PDF

    PI-38

    Contextual Info: •HYUNDAI HYM594000B Series SEMICONDUCTOR 4M X 9-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM594000B is a 4M x 9-bit Fast page mode CM O S DRAM module consisting of two HY5117400 in 24/28 pin SO J and one HY514100A in 20/26 pin SO J on a 30 pin glass-epoxy printed circuit board. 0.22nF decoupling


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    hym594000bhy5117400hy514100ahym594000bm/blm+51bc0e-00may9353-before-h1bc06-00pi-38 PDF

    HYM532410M

    Abstract: HYM532410 HYM53241
    Contextual Info: •HYUNDAI SEMICONDUCTOR HYM532410 Series 4 M x 32-bit c m o s dram m o d u le PRELIMINARY DESCRIPTION The HYM532410 is a 4M x 32-blt Fast page mode C M O S DRAM module consisting of eight HY5117400 in 24/28 pin SO J on a 72 pin glass-epoxy printed circuit board. 0.2^uF decoupling capacitor is mounted for each DRAM.


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    hym53241032-bit32-blthy5117400+6hym53241om/lmhym53241omg/lmgoutp03-00-may931ce03-00-may93hym532410mhym53241 PDF

    HYM532200AM

    Abstract: L76 H hym532200A
    Contextual Info: •HYUNDAI SEMICONDUCTOR HYM532200A Series 2M X 32-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM532200A is a 2M x 32-bit Fast page mode CMOS DRAM module consisting of sixteen HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22ftF decoupling capacitor is mounted for each DRAM.


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    hym532200a32-bithy514400a22ftf+5hym532200am/almhym532200amg/almg1cd03-00-may93hym532200aml76 h PDF

    Contextual Info: 7 DRAWING THIS MADE IN DRAWING THIRD 15 ANGLE UNPUBLI5HED COPYRIGHT 19 6 5 4 7 3 PROJECTION RELEASED BY AMP FOR PUBLICATION INCORPORATED. ALL INTERNATIONAL RIGHTS DI ST LOC 19 AD RESERVED. 39 REV I 5 I0N5 ZONE LTR DESCRIPTION DATE K REV PER 0 G 2 1 - 0 0 4 8 - 9 9


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    0g21-0048-990g3c-53-0001may99006max-+650ale0b50leteunle5509-feb-00amp35397/home/amp35397/edmmod PDF

    Contextual Info: •HYUNDAI SEMICONDUCTOR HYM581000 Series 1M X 8-bit CMOS DRAM MODULE DESCRIPTION The HYM581000 is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY531000 In 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22pF decoupling capacitor is mounted for each DRAM.


    OCR Scan
    hym581000hy531000hym581000m1bb01-11-may93+34l750afl1bb01-11-mhym581000a PDF

    Contextual Info: HY U NDAI HYM594000B Series SEMICONDUCTOR 4M X 9-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM594000B is a 4M x 9-bit Fast page mode CMOS DRAM module consisting of two HY5117400 in 24/28 pin SOJ and one HY514100A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22|iF decoupling


    OCR Scan
    hym594000bhy5117400hy514100ahym594000bm/blm+4compa-may93dd16b24k750fla0q01flfl3 PDF