C4D20120A Search Results

C4D20120A Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
C4D20120A		Cree	Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 1.2KV 20A TO220-2	Original	PDF		6

C4D20120A Price and Stock

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Wolfspeed


Wolfspeed C4D20120A DIODE SIL CARB 1200V 54.5A TO220
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	C4D20120A	Tube	4,659		1	1 $26.12 10 $26.12 100 $14.83 1000 $14.06 10000 $14.06	Buy Now
Verical	C4D20120A		444		5	1 - 10 $11.90 100 $9.99 1000 $9.16 10000 $9.16	Buy Now
TME	C4D20120A		68		1	1 $16.06 10 $14.38 100 $11.50 1000 $11.17 10000 $11.17	Buy Now
Richardson RFPD	C4D20120A				1	1 $11.58 10 $11.58 100 $10.98 1000 $10.98 10000 $10.98	Buy Now
Chip One Stop	C4D20120A	Bulk	444	0 Weeks, 1 Days	1	1 $15.30 10 $11.30 100 $9.16 1000 $7.77 10000 $7.33	Buy Now

C4D20120A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: C4D20120A VRRM = 1200 V Silicon Carbide Schottky Diode IF TC=135˚C = 25.5 A Z-Rec Rectifier Qc Features • • • • • Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching	Original	C4D20120A O-220-2 C4D20120A	PDF
C4D20120 Abstract: C4D20120A Contextual Info: C4D20120A–Silicon Carbide Schottky Diode VRRM = 1200 V Z-Rec Rectifier IF = 20 A Qc =130 nC Features • • • • • Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Swtitching	Original	C4D20120A O-220-2 C4D20120A C4D20120 C4D20120	PDF
Contextual Info: VDS 1200 V ID @ 25˚C 60 A C2M0040120D Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS on 40 mΩ N-Channel Enhancement Mode Features • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive	Original	C2M0040120D O-247-3 C2M0040mplanted C2M0040120D	PDF
Contextual Info: VDS 1200 V ID @ 25˚C 90 A C2M0025120D Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS on 25 mΩ N-Channel Enhancement Mode Features • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive	Original	C2M0025120D O-247-3 C2M0025mplanted C2M0025120D	PDF
C4D05120 Abstract: CMF10120 CSD01060E c4d02120e c4d02120 C3D02060 C4D02120A C3D02060A C2D20120 c3d0606 Contextual Info: Power Product Line Z-RecTM Rectifiers DALL, Rev. G Datasheet: C3 VRRM V IF(AVG) (A) IF(AVG) (A) (Tc=150°C) (Tc=100°C) Zero-Recovery Rectifiers and VF(T VF(T TJ(Max) Max Typ Max (°C) Package Type Recommended for new designs? J=25°C) Typ J=175°C) CSD01060A	Original	CSD01060A CSD01060E C3D02060A C3D02060E C3D02060F C3D03060A C3D03060E C3D03060F C3D04060A C3D04060E C4D05120 CMF10120 c4d02120e c4d02120 C3D02060 C4D02120A C2D20120 c3d0606	PDF