C4D20120A Search Results
C4D20120A Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| C4D20120A | Cree | Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 1.2KV 20A TO220-2 | Original | 6 |
C4D20120A Price and Stock
Wolfspeed C4D20120ADiode Schottky SiC 1.2KV 54.5A 2-Pin(2+Tab) TO-220 Tube |
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C4D20120A | 94 | 1 |
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C4D20120A | 94 | 15 Weeks | 1 |
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C4D20120A | 3 | 1 |
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C4D20120A | 1,000 |
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C4D20120A | 5,000 |
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Cree, Inc. C4D20120ADiode Schottky SiC 1.2KV 54.5A 2-Pin(2+Tab) TO-220 Tube |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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C4D20120A | 9 |
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C4D20120A | 7 |
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C4D20120A Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: C4D20120A VRRM = 1200 V Silicon Carbide Schottky Diode IF TC=135˚C = 25.5 A Z-Rec Rectifier Qc Features • • • • • Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching |
Original |
c4d20120ao-220-2 | |
C4D20120
Abstract: C4D20120A
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Original |
c4d20120ao-220-2c4d20120 | |
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Contextual Info: VDS 1200 V ID @ 25˚C 60 A C2M0040120D Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS on 40 mΩ N-Channel Enhancement Mode Features • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive |
Original |
c2m0040120do-247-3c2m0040mplanted | |
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Contextual Info: VDS 1200 V ID @ 25˚C 90 A C2M0025120D Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS on 25 mΩ N-Channel Enhancement Mode Features • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive |
Original |
c2m0025120do-247-3c2m0025mplanted | |
C4D05120
Abstract: CMF10120 CSD01060E c4d02120e c4d02120 C3D02060 C4D02120A C3D02060A C2D20120 c3d0606
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csd01060acsd01060ec3d02060ac3d02060e+14 |