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    C2M0025120D Search Results

    C2M0025120D Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    C2M0025120D
    		Cree FETs - Single, Discrete Semiconductor Products, SIC MOSFET N-CH 1200V 90A TO-247 Original PDF 10
    SF Impression Pixel

    C2M0025120D Price and Stock

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    Wolfspeed C2M0025120D

    SICFET N-CH 1200V 90A TO247-3
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    DigiKey C2M0025120D Tube 160 1
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    Verical () C2M0025120D 52,200 450
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    C2M0025120D 206 4
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    C2M0025120D 109 1
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    Arrow Electronics C2M0025120D 206 34 Weeks 4
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    Newark C2M0025120D Bulk 109 1
    • 1 $70.75
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    TME C2M0025120D 1
    • 1 $101.27
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    Richardson RFPD C2M0025120D 486 1
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    Chip One Stop C2M0025120D Tube 370 0 Weeks, 1 Days 1
    • 1 $83.80
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    Chip Stock C2M0025120D 6,550
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    Vyrian C2M0025120D 5,356
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    Win Source Electronics C2M0025120D 5,050
    • 1 $63.71
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    AP SEMI AC2M0025120D

    SIC MOSFET N-CH 1200V 94A TO247-
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    DigiKey AC2M0025120D Tube 1
    • 1 $12.43
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    Analog Power AMC2M0025120D

    SICFET N-CH 1200V 20A TO-247
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    DigiKey AMC2M0025120D Bulk 1
    • 1 $95.43
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    Cree, Inc. C2M0025120D

    POWER FIELD-EFFECT TRANSISTOR, 90A I(D), 1200V, 0.034OHM, 1-ELEMENT, N-CHANNEL, SILICON CARBIDE, METAL-OXIDE SEMICONDUCTOR FET, TO-247
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    Quest Components () C2M0025120D 236
    • 1 $149.56
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    C2M0025120D 20
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    Wolfsspeed/Cree C2M0025120D

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    Chip-Germany GmbH C2M0025120D 2,800
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    C2M0025120D Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: VDS 1200 V ID @ 25˚C 90 A C2M0025120D Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS on 25 mΩ N-Channel Enhancement Mode Features • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive


    Original     		C2M0025120D O-247-3 C2M0025mplanted C2M0025120D PDF

    Contextual Info: VDS 1200 V ID @ 25˚C 90 A CPM2-1200-0025B Silicon Carbide Power MOSFET TM C2M MOSFET Technology RDS on 25 mΩ N-Channel Enhancement Mode Features • • • • • • • Chip Outline New C2M SiC MOSFET technlogy High Blocking Voltage with Low On-Resistance


    Original     		CPM2-1200-0025B CPM2-1200-0025B PDF

    Contextual Info: VDS 1200 V ID @ 25˚C 90 A CPM2-1200-0025B Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS on 25 mΩ N-Channel Enhancement Mode Features • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive


    Original     		CPM2-1200-0025B CPM2-1200-0025B PDF