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C4D20120 Datasheets (3)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
C4D20120A		Cree	Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 1.2KV 20A TO220-2	Original	PDF		6
C4D20120D		Cree	Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE SCHOTTKY 1200V 16A TO247	Original	PDF		6
C4D20120H		Cree/Wolfspeed	Discrete Semiconductor Products - Diodes - Rectifiers - Single - ZRECTM 20A 1200V SIC SCHOTTKY DI	Original	PDF	603.99KB

C4D20120 Price and Stock

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Wolfspeed C4D20120A SiC Schottky Diodes SIC SCHOTTKY DIODE 1200V, 20A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	C4D20120A		813			1 $22.66 10 $14.39 100 $13.23 1000 $13.15 10000 $13.15	Buy Now
Wolfspeed C4D20120H SiC Schottky Diodes 20A 1200V SiC Schottky Diode
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	C4D20120H		504			1 $16.99 10 $10.50 100 $10.50 1000 $10.02 10000 $10.02	Buy Now
Wolfspeed C4D20120D SiC Schottky Diodes SIC SCHOTTKY DIODE 1200V, 2x10A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	C4D20120D		88			1 $16.45 10 $10.13 100 $10.13 1000 $9.60 10000 $9.60	Buy Now
Verical ()	C4D20120D		39,480		30	1 - 10 - 100 $8.30 1000 $8.30 10000 $8.07	Buy Now
	C4D20120D		390		30	1 - 10 - 100 $10.00 1000 $10.00 10000 $10.00	Buy Now
Arrow Electronics ()	C4D20120D		39,480	62 Weeks	30	1 - 10 - 100 $8.30 1000 $8.30 10000 $8.07	Buy Now
	C4D20120D		810		450	1 - 10 - 100 - 1000 $8.20 10000 $7.87	Buy Now
Cree, Inc. C4D20120A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	C4D20120A		7			1 $24.99 10 $24.99 100 $24.99 1000 $24.99 10000 $24.99	Buy Now

C4D20120 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
C4D20120D Contextual Info: C4D20120D VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 33 A* Z-Rec Rectifier Qc Features • • • • • = 104 nC* Package 1.2-KVolt Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior	Original	C4D20120D O-247-3 C4D20120D	PDF
Contextual Info: C4D20120A VRRM = 1200 V Silicon Carbide Schottky Diode IF TC=135˚C = 25.5 A Z-Rec Rectifier Qc Features • • • • • Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching	Original	C4D20120A O-220-2 C4D20120A	PDF
C4D20120D Abstract: C4D20120 D20120 CSD04060 A1818 Contextual Info: C4D20120D VRRM = 1200 V Silicon Carbide Schottky Diode IF = 20 A Z-Rec Rectifier Qc = 132 nC Features • • • • • 1.2-KVolt Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior Positive Temperature Coefficient on VF	Original	C4D20120D O-247-3 C4D20120 C4D20120D C4D20120 D20120 CSD04060 A1818	PDF
C4D20120 Abstract: C4D20120A Contextual Info: C4D20120A–Silicon Carbide Schottky Diode VRRM = 1200 V Z-Rec Rectifier IF = 20 A Qc =130 nC Features • • • • • Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Swtitching	Original	C4D20120A O-220-2 C4D20120A C4D20120 C4D20120	PDF
c4d20120 Contextual Info: C4D20120D Silicon Carbide Schottky Diode Z-Rec Rectifier VRRM = 1200 V IF; = 32 A TC<135˚C Qc = 132 nC Features • • • • • 1.2-KVolt Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior	Original	C4D20120D O-247-3 C4D20120 C4D20120D c4d20120	PDF
Contextual Info: C4D20120D VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 33 A* Z-Rec Rectifier Qc Features • • • • • = 104 nC* Package 1.2-KVolt Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior	Original	C4D20120D O-247-3 C4D20120D	PDF
c4d20120 Abstract: C4D20120D Contextual Info: C4D20120D Silicon Carbide Schottky Diode Z-Rec Rectifier VRRM = 1200 V IF; = 32 A TC<135˚C Qc = 132 nC Features • • • • • 1.2-KVolt Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior	Original	C4D20120D O-247-3 C4D20120 C4D20120D c4d20120	PDF
Contextual Info: VDS 1200 V ID @ 25˚C 60 A C2M0040120D Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS on 40 mΩ N-Channel Enhancement Mode Features • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive	Original	C2M0040120D O-247-3 C2M0040mplanted C2M0040120D	PDF
Contextual Info: VDS 1200 V ID @ 25˚C 90 A C2M0025120D Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS on 25 mΩ N-Channel Enhancement Mode Features • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive	Original	C2M0025120D O-247-3 C2M0025mplanted C2M0025120D	PDF
C4D05120 Abstract: CMF10120 CSD01060E c4d02120e c4d02120 C3D02060 C4D02120A C3D02060A C2D20120 c3d0606 Contextual Info: Power Product Line Z-RecTM Rectifiers DALL, Rev. G Datasheet: C3 VRRM V IF(AVG) (A) IF(AVG) (A) (Tc=150°C) (Tc=100°C) Zero-Recovery Rectifiers and VF(T VF(T TJ(Max) Max Typ Max (°C) Package Type Recommended for new designs? J=25°C) Typ J=175°C) CSD01060A	Original	CSD01060A CSD01060E C3D02060A C3D02060E C3D02060F C3D03060A C3D03060E C3D03060F C3D04060A C3D04060E C4D05120 CMF10120 c4d02120e c4d02120 C3D02060 C4D02120A C2D20120 c3d0606	PDF