C4 MMIC Search Results

Rogers 4350

Abstract: HMC245QS16 HMC252QS24 sp8t rf switch PATH240
Contextual Info: v01.0404 HMC245QS16 GaAs MMIC SP3T NON-REFLECTIVE SWITCH, DC - 3.5 GHz Evaluation PCB List of Material Item Description J1 - J4 PC Mount SMA RF Connector J5 - J8 DC Pin C1 - C4 100 pF Capacitor, 0402 Pkg. C5 10k pF Capacitor, 0603 Pkg. U1 HMC245QS16 SP3T Switch

MLA-01122B-C4

Abstract: C4 MMIC schematic diagram receiver data circuit satellite
Contextual Info: MLA-01122B-C4 1 - 12 GHz Packaged Low-Noise MMIC Amplifier Data Sheet Rev A June 2010 FEATURES • • • • • • • • • • APPLICATIONS 1.0 to 12 GHz • Microwave Point-to-Point Radios 1.3 dB @ 2.0 GHz • Satellite and Telemetry Communications

MLA-01122B-C4

Abstract: mmic instrumentation amplifier PCB layout
Contextual Info: MLA-01122B-C4 1 - 12 GHz Packaged Low-Noise MMIC Amplifier Data Sheet Rev A June 2010 FEATURES • • • • • • • • • • APPLICATIONS 1.0 to 12 GHz • Microwave Point-to-Point Radios 1.3 dB @ 2.0 GHz • Satellite and Telemetry Communications

Capacitor 0.01 uF

Contextual Info: MAALSS0024 Broadband Low Noise Amplifier 1.7 - 2.1 GHz Features • • • • • V 1.00 Application Schematic High Gain: 20 dB Low Noise Figure: 1.0 dB High IP3: 26 dBm Single +3 V or +5 V Bias Small Package: SOT-26 VDD1 VDD2 C3 Description L2 GND VDD C4

capacitor 0.01 uF

Abstract: M513 MAALSS0024 MAALSS0024SMB-01 MAALSS0024SMB-02 MAALSS0024TR L2 sot26
Contextual Info: Broadband Low Noise Amplifier 1.7 - 2.1 GHz Features • • • • • MAALSS0024 V2 Application Schematic High Gain: 20 dB Low Noise Figure: 1.0 dB High IP3: 26 dBm Single +3 V or +5 V Bias Small Package: SOT-26 VDD1 VDD2 C3 L2 Description GND VDD C4 RFOUT

stripline filter

Abstract: BGA2012 TDK0603 TRANSISTOR SMD nf c4 High IP3 MMIC LNA at 1.8-2.4 GHz
Contextual Info: H High IP3 MMIC LNA at 1.8-2.4 GHz Application note for the BGA2012 The BGA2012 is a MMIC 50 Ω LNA block for cellular applications at 1.8 GHz to 2.4 GHz that require low noise, high gain and good linearity. Possible applications: • 1.8 GHz - DECT - gain 15 dB, low noise 1.7 dB, supply curent 4 mA

MIXER SCHEMATIC DIAGRAM

Abstract: c4 ic rf amplifier
Contextual Info: HPMX-2006 Demonstration Circuit Board rev AP060596A Applications Bulletin Introduction The circuit board described is designed for use with HPMX-2006 up converter / amplifier MMIC. The board can be set up to test the mixer alone or to test the mixer/amp combination. It allows testing the

MP0402

Abstract: MP0002 MP0010 MP0022 MP0033 C4 MMIC MP0004
Contextual Info: M-Pulse Microwave Inc. 576 Charcot Ave. San Jose, Ca, 95131 Tel: 408 432-1480 Fax:(408) 432-1480 www.mpulsemw.com MIS CHIP CAPACITORS Tolerance = +/- 10 % on singles; Binary = +/- 20%. Metallization options: "A" = AuSn Attach and wire bondable pad "B" = AuGe attach (backside) and AuSn topside for FET or MMIC Mounting (self bias)

MG271H

Abstract: marking s22 GRM1555C1H1R0BA01 mmic C5 sot 86 GRM1555C1H1R2BA01 GRM1555C1H1R8BA01
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG20271H9 Rev. 0, 12/2011 Enhancement Mode pHEMT Technology E-pHEMT MMG20271H9T1 High Linearity Amplifier The MMG20271H9 is a high dynamic range, single-stage, low noise amplifier MMIC, housed in a SOT-89 standard plastic package. With high OIP3 and low

Zener C212

Abstract: diode zener c71 zener ma 1150
Contextual Info: ASX621 250 ~ 3000 MHz MMIC Amplifier Description Features  18 dB Gain at 2000 MHz  32.5 dBm P1dB at 2000 MHz  49 dBm Output IP3 at 2000 MHz  MTTF > 100 Years  Two Power Supplies The ASX621, a power amplifier MMIC, has a high linearity, high gain, and high efficiency over a wide

Contextual Info:  AWT918 TX POWER MMIC Advanced Product Information Rev 0 CELLULAR/PCS Dual Band GaAs Power Amplifier IC DESCRIPTION: The AWT918 is a monolithic GaAs Power Amplifier. It can be used in the following dual band handset applications:GSM900/DCS1800, GSM900/GSM1900 and

AH03L

Abstract: TAJB104KLRH m 213 exposed pad 5v mmic A MCH18 SXA-3318B TAJB106K020R 99c4
Contextual Info: Preliminary Product Description SXA-3318B Sirenza Microdevices’ SXA-3318B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in a low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular

tk 1838

Abstract: h028 IC 7464 circuit 7492 IC CHIP UPC8128TB UPC8151TB UPC8152TB UPC8178TB UPC8178TK UPC8179TB
Contextual Info: SILICON MMIC LOW CURRENT AMPLIFIER UPC8179TK FOR MOBILE COMMUNICATIONS FEATURES OUTLINE DIMENSIONS Units in mm • HIGH DENSITY SURFACE MOUNTING: 6 Pin Leadless Minimold Package (1.5 x 1.1 x 0.55 mm) PACKAGE OUTLINE TK • SUPPLY VOLTAGE: VCC = 2.4 to 3.3 V

Contextual Info: Document Number: MMG20271H9 Rev. 0, 12/2011 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E-pHEMT MMG20271H9T1 High Linearity Amplifier The MMG20271H9 is a high dynamic range, single-stage, low noise amplifier MMIC, housed in a SOT-89 standard plastic package. With high OIP3 and low

Contextual Info: AWG3020 AWG3020 Data Sheet 50 ~ 4000 MHz Wide-band Gain Block Amplifier MMIC 1. Product Overview 1.1 General Description AWG3020, a gain block amplifier MMIC, has high linearity, low noise and high efficiency over a wide range of frequency from 50 MHz to 4000 MHz, being suitable for use in both receiver and transmitter of

SXA3318BZ

Abstract: TAJB104KLRH MCH18 SXA-3318B TAJB106K020R AM03M
Contextual Info: SXA-3318B SXA-3318BZ Product Description RoHS Compliant & Green Package Pb 400-2500 MHz Balanced ½ W Medium Power GaAs HBT Amplifier with Active Bias Sirenza Microdevices’ SXA-3318B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in a low-cost

zener diode c5

Abstract: Zener C422 zener diode c6 C2 6 zener diode 5-6V Zener Diode Zener Diode C3 5
Contextual Info: ASX401 100 ~ 3000 MHz MMIC Amplifier Features Description  19.5 dB Gain at 900 MHz  29.5 dBm P1dB at 900 MHz  47 dBm Output IP3 at 900 MHz  MTTF > 100 Years  Single Supply The ASX401, a power amplifier MMIC, has a high linearity, high gain, and high efficiency over a wide

mmic C4 sot 89

Contextual Info: MMIC AP209 Product Features Application • 50 ~ 3000MHz • GaAs MMIC • 43dBm Output IP3 • 13.7dB Gain • 24dBm P1 dB • Single +9V Supply • SOT-89 SMT Package • CDMA, W-CDMA Medium Power Amplifier • High Linearity Drive Amplifier Package Type: SOT-89

Contextual Info: Document Number: MMG15241H Rev. 1, 4/2011 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E-pHEMT MMG15241HT1 High Linearity Amplifier The MMG15241H is a high dynamic range, low noise amplifier MMIC, housed in a SOT - 89 standard plastic package. It is ideal for Cellular, PCS, LTE,

Contextual Info: MMIC AP209 Product Features Application • 50 ~ 3000MHz • GaAs MMIC • 43dBm Output IP3 • 13.7dB Gain • 24dBm P1 dB • Single +9V Supply • SOT-89 SMT Package • CDMA, W-CDMA Medium Power Amplifier • High Linearity Drive Amplifier Package Type: SOT-89

Contextual Info: AWG3020 AWG3020 Data Sheet 50 ~ 4000 MHz Wide-band Gain Block Amplifier MMIC 1. Product Overview 1.1 General Description AWG3020, a gain block amplifier MMIC, has high linearity, low noise and high efficiency over a wide range of frequency from 50 MHz to 4000 MHz, being suitable for use in both receiver and transmitter of

Contextual Info: AWG3023 AWG3023 Data Sheet 50 ~ 4000 MHz Wide-band Gain Block Amplifier MMIC 1. Product Overview 1.1 General Description AWG3023, a gain block amplifier MMIC, has high linearity, low noise and high efficiency over a wide range of frequency from 50 MHz to 4000 MHz, being suitable for use in both receiver and transmitter of

Contextual Info: Document Number: MMG20271H Rev. 0, 12/2010 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E-pHEMT MMG20271HT1 High Linearity Amplifier The MMG20271H is a high dynamic range, low noise amplifier MMIC, housed in a QFN 3x3 standard plastic package. It is ideal for Cellular, PCS, LTE,

ASL39D2

Contextual Info: ASL39D2 ASL39D2 Data Sheet 1.2 GHz CATV Push-pull Amplifier MMIC 1. Product Overview Features • 5 ~ 1200 MHz Bandwidth  18.5 dB High Gain at 1 GHz  High Output Power: 105 dBV  Robust under Hard Operating Conditions  +5 V, 300 mA Supply Applications