AD8561
Abstract: c3219a AD8564 AD8564AN AD8564AR AD8598 MAX901 N-16 DXV1
Contextual Info: a FEATURES +5 V Single-Supply Operation 7 ns Propagation Delay Low Power Separate Input and Output Sections TTL and CMOS Logic Compatible Outputs Wide Output Swing TSSOP, SOIC and PDIP Packages APPLICATIONS High Speed Timing Line Receivers Data Communications
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max901ad85641e-141e-15+816-leadc3219aad8561ad8564anad8564arad8598n-16dxv1
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r9824
Abstract: R9825 HT 1200-4 smd L9707 HT 1200-4 r9810 L9708 U5400 r2561 C3523
Contextual Info: 8 6 7 2 3 4 5 CK APPD GILA 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN DATE ? ? ? EVT1 D C B PAGE PDF 1 2 3 4 6 7 8 9 10 11 13* 14 16
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RTL8211E
Abstract: ISL6258A 88E1116R Marvell 88E1116R ISL6258 RTL8211 L6703 u9701 MCP79-B01 Q7055
Contextual Info: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV SCHEM,MBP 15"MLB ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ?
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isl10isl11rtl8211eisl6258a+888e1116rmarvell 88e1116risl6258rtl8211l6703u9701mcp79-b01q7055
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IRF5505
Abstract: C3427 SN7002DW LD1807 343S0284 apple AirPort Extreme h11m r3361 HC17051 1n914 onsemi
Contextual Info: 6 7 B A 1 2 3 4 5 6 7 8 9 10 11 13* 14 16 17 18 21* 22 23 24 25* 26 27 28 29 30 31 32 33 34 35 36 37 38 40 44 45 46 48 49 50 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 REV 08/03/04 CIRCUIT
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test10test11cs8406ra300+12ra3021/16wirf5505c3427sn7002dwld1807343s0284apple airport extremeh11mr3361hc170511n914 onsemi
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MAX8770
Abstract: ICS954310 motherboard samsung ba41 MDB41 PC87541 QUANTA C3229 C3198 PC87541 sil3512 quanta
Contextual Info: 1 2 3 4 5 CPU Yonah/Merom 478 PIN micro FC-PGA 1 RJ9 Block Diagram P3,4 14.318MHz FSB 667 MHz(166X4) A LVDS LCD A LVDS P7 CLOCK GEN DDRII 400/533/667 Calistoga DVI M56 UNBUFFERED DDRII SODIMM CRT P11 P2 P12 945GM/PM R/G/B ICS954310 R/G/B 1466 PIN (micro FCBGA)
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318mhz166x4ics954310945gm/pm+15p5-1016lanesp36-4088e8053alc260ti-tpa6011a4max8770motherboard samsung ba41mdb41pc87541 quantac3229c3198pc87541sil3512quanta
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ISL9504
Abstract: b6886 PP3V42G3H NVIDIA G84m ISL9504BCRZ C8050 12v p66 apple k50 apple M75 MLB 820-2101 PP3V42
Contextual Info: 8 6 7 2 3 4 5 CK APPD OROYA 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ? 03/20/2007 - DVT
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isl10isl11isl9504b6886+8pp3v42g3hnvidia g84misl9504bcrzc8050 12vp66 applek50 applem75 mlb 820-2101pp3v42
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AD8561
Abstract: AD8564 AD8564AN AD8564AR AD8598 MAX901 N-16 C3219
Contextual Info: a FEATURES +5 V Single-Supply Operation 7 ns Propagation Delay Low Power Separate Input and Output Sections Compatible with TTL and CMOS Logic Wide Output Swing TSSOP Package APPLICATIONS High Speed Timing Line Receivers Data Communications High Speed V-to-F Converters
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d7810
Abstract: L9141 MXM pinout U4900 J9002 K40 fet MARK G4 SOT363 Apple j9002 k50 apple ISL6269
Contextual Info: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. M78-DVT REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE 33 503047 ENGINEERING RELEASED
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m78-dvtd7810l9141mxm pinout+7u4900j9002k40 fetmark g4 sot363apple j9002k50 appleisl6269
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MCP79MXT-B3
Abstract: ISL6258A ti c3931 u9701 rtl8211* Reference design L6703 C3931 88E1116R FW643E CS4206A
Contextual Info: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV SCHEM,CORNHOLE,K19 ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE
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isl10isl11mcp79mxt-b3isl6258a+8ti c3931u9701rtl8211* reference designl6703c393188e1116rfw643ecs4206a
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SMC1602
Abstract: SN7002DW c3231 Q2576 r2561 C3239 C3303 C2651 C5060 U4900
Contextual Info: 8 6 7 C B A PAGE PDF 1 2 3 4 5 6 7 8 9 10 11 13* 14 16 17 18 21* 22 23 24 25* 26 27 28 29 30 31 32 33 34 35 36 37 38 40 44 45 46 48 49 50 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 2 3
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cs8406ra300ra3021/16w+10smc1602sn7002dwc3231q2576r2561c3239c3303c2651c5060u4900
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ISL9504
Abstract: j4310 BD9828 ISL9504B NVIDIA G84m RN5VD30A-F SLG2AP101 Q7080 88E8058 PP3V42G3H
Contextual Info: 8 6 7 04/02/2007 Contents D Page TABLE_TABLEOFCONTENTS_HEAD TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM
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03/19/m100-ohm95-ohmsisl10+11isl11isl9504j4310bd9828isl9504bnvidia g84mrn5vd30a-fslg2ap101q708088e8058pp3v42g3h
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ISL9504
Abstract: ISL9504B M75 MLB 820-2101 PP3V42G3H C8550 c7381 N8242 c5855 ISL9504 U7500 c3334 schematic diagram
Contextual Info: 8 6 7 2 3 4 5 CK APPD OROYA 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ? 03/20/2007 - DVT
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e3 sot363 8pin
Abstract: ISL9504 PP3V42G3H C8050 R5370 "cross reference" k50 apple NVIDIA G84m p66 apple M75 MLB 820-2101 051-7225
Contextual Info: 8 6 7 2 3 4 5 CK APPD OROYA 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ? 03/20/2007 - DVT
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01/17/2007erisl10isl11e3 sot363 8pin+9isl9504pp3v42g3hc8050r5370 "cross referencek50 applenvidia g84mp66 applem75 mlb 820-2101051-7225
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88SA8052
Abstract: south bridge SIS 968 SIS671DX c3229 ic 4407A M671DX 88SA8052A1 sis 968 C3228 IT8511
Contextual Info: 5 4 3 2 1 F70SL Main BD. R1.0 BLOCK DIAGRAM CPU Merom2-3 D LVDS Thermal 5 D FSB 533/667/800 LCD Clock GEN 4 17 CRT RGB NV NB9M-GS PCIE 0-15 North Bridge Sis 671DX 53 18 HDMI TMDS DDR2 533/667 Mhz DDR2 SO-DIMM X2 12-14 6-11 MuTIOL 1G 16 C Debug CON C South
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f70sl671dxite851288sa8052+15alc66310/100/1000mrtl8211bmax8632apl5913si4800bdysouth bridge sis 968sis671dxc3229ic 4407am671dx88sa8052a1sis 968c3228it8511
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r4363
Abstract: L9141 NTC 16D-7 MXM pinout C4253 PP2102 d7810 imac MLB ntc 10d-7 PP1013
Contextual Info: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. M72-DVT REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE 34 503014 ENGINEERING RELEASED
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sil3512
Abstract: C3088 CMOS Camera G966-25 C3198 PC87541 ICS9lpr310 7336A 915GM c3197 VT6212
Contextual Info: 1 2 3 4 5 478 PIN micro FC-PGA 1 RJ6 Block Diagram CPU Yonah/Merom P3,4 14.318MHz FSB 667 MHz(166X4) A LVDS LCD A LVDS P7 CLOCK GEN DDRII 400/533/667 Calistoga DVI M56 UNBUFFERED DDRII SODIMM 945GM/PM R/G/B CRT P11 R/G/B 1466 PIN (micro FCBGA) 37.5mm x 37.5mm
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ISPSD coolmos
Abstract: bup400d mosfet nepi
Contextual Info: Properties of the New Compensation Devices CoolMOS between 420K and 80K— the Ideal Device for Cryogenic Applications* A.E. Schlögl a), G. Deboy b), H.W. Lorenzen c), U. Linnert a), H.-J. Schulze a) and J.P. Stengl b) a) SIEMENS AG, Corporate Technology, Research Center Power Electronics, Otto-Hahn-Ring 6, 81730 Munich, Germany
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6265A
Abstract: M96-SCE RTL8111d kb3926 RTL8103 RTL8111DL SLG8SP626V C3198 RTL8103E p2003bvg
Contextual Info: 1 2 3 A 1 2 3 4 5 6 : : : : : : 5 6 7 8 01 UT12 SYSTEM DIAGRAM PCB STACK UP LAYER LAYER LAYER LAYER LAYER LAYER 4 DDRII DDRII-SODIMM1 TOP IN1 IN2 VCC IN3 BOT 667/800 MHz AMD Lion Sabie Griffin PAGE 7,8 DDRII DDRII-SODIMM2 CPU THERMAL SENSOR S1G2 Processor
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tps51620
Abstract: TPS51610 C3148 kbc 1091 PCMB0603T tps51125 BLM18PG181SN1J BQ24740 Inventec U1015
Contextual Info: Zenith UMA Cycle 1 MV BUILD 2009.03.18 EE DATE DATE POWER DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV 3 SIZE = FILE NAME : XXXX-XXXXXX-XX XXXXXXXXXXXX P/N INVENTEC TITLE VER : Zenith UMA C1 SIZE CODE A3 CS REV DOC. NUMBER 1310A22526-0-MTR A03 SHEET
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PP3V42G3H
Abstract: apple J8000 ISL9504 NVIDIA G84m C4740 p66 apple C8050 apple computer ad30 ok 1500 3p3 C7103
Contextual Info: 8 6 7 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 2 3 4 5 1 CK APPD SCHEM,MLB,MBP15 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ? 04/24/2007
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ISL9504
Abstract: pg65d U8550 SH0925 DP431 U8500 j4310 vishay CK 67A PP3V42G3H 338S0432
Contextual Info: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV SCHEM,MBP 15" MLB ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ?
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R9810
Abstract: HT 1200-4 smd r9824 HT 1200-4 c6011 L9707 L5800 c9611 C3150 ic c2335
Contextual Info: 8 6 7 2 3 4 5 CK APPD GILA 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN DATE ? ? ? EVT1 B 1 2 3 4 6 7 8 9 10 11 13* 14 16 17 18 21* 22
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