C3064 Search Results

Contextual Info: Large Area InGaAs Avalanche Photodiodes for 1550 nm eye-safe laser range finding applications Overview The C30645 and C30662 Series APDs are high speed, large area lnGaAs/lnP avalanche photodiodes. These devices provide large quantum efficiency. Q.E. , high responsivity and low noise in the

Contextual Info: DATASHEET Photon Detection C30645 and C30662 Series Large Area InGaAs Avalanche Photodiodes Key Features •      Spectral response 1100 - 1700 nm High responsivity Low dark current and noise Large area RoHS-compliant Available with lead-solder

Contextual Info: E G & G/CANADA/ OP TOELEK 3G 3G blO IO RC/IB ectro Optics OOOOO'ì? 4 3 2 HCANA Planar InGaAs ÁPD C30644, C30645 DATA SHEET • Spectral response range 1100 to 1700 nm ■ High responsivity ■ Low capacitance ■ Fast response time ■ Low dark current and noise

C30644E

Abstract: InGaAs apd photodiode C30644 C30645E photodiode Avalanche photodiode (APD) FOR POWER RCA 432 RCA H 432 C30644ECER C30645 C30645ECER
Contextual Info: E I G t & G/CANADA/OPTOELEK C i l 3G30bl0 IO OOOOO'ì? 432 H C ANA Planar InGaAs ÁPD C30644, C30645 DATA SH EET E le c t r o Optics • Spectral response range 1100 to 1700 nm ■ High responsivity ■ Low capacitance ■ Fast response time ■ Low dark current and noise

hte 2642

Abstract: HTE-2642 C30642E ESILICON PerkinElmer Optoelectronics AQAP-1 near IR photodiodes pin Photodiode 1550 nm C30619 C30641
Contextual Info: Description The PerkinElmer family of large-area InGaAs PIN photodiodes provide high responsivity from 800 nm to 1700 nm for applications Large-Area InGaAs Photodiodes C30619, C30641, C30642, C30665 EVERYTHING IN A including optical power meters, fiber optic test

C30642E

Abstract: rca 514 C30618 C30619 C30641 C30642 T018 el 85
Contextual Info: E G & G/CANADA/OPTOELEK ^ V n l l fl i f J f 1 I ID ]> • E le c tr o O p tic s 'T ^ £/ / 'S 3 3D30bl0 OODDDTD DÔ6 ■ CANA Photodiodes C30618, C30619, C30641, C30642 ¥ -

C30644E

Abstract: InGaAs apd photodiode C30645 rca 536 C30644 C30644ECER C30645E C30645ECER C30645EQC fiber optic monomode
Contextual Info: IDE » 1 740Mb7S 00000^7 3 ^ C A INC/ ELECTRO OPTICS u w Planar InGaAs APD C30644, C30645 DATA i w Spectral response range 1100 to 1700 nm • High responsivity ■ Low capacitance ■ Fast response time ■ Low dark current and noise ■ Available in a variety of convenient packages

Contextual Info: The C30645 and C30662 Series APDs are high speed, large area lnGaAs/lnP avalanche photodiodes. These devices provide high Q.E., high responsivity and low noise in the spectral range between 1100 nm and 1700 nm. They are optimized for use at a wavelength of

hte 2642

Abstract: InGaas PIN photodiode, 1550 sensitivity HTE-2642 C30642E C30642 PerkinElmer 1700 ESILICON C30641 C30665 C30619
Contextual Info: C30619, C30641, C30642, C30665 Figure 9. Package D15: TO-5 with Glass Window. Ordering Guide C30 # # # L - X X X TE-Cooler Option: TC: DTC: 1-stage TE cooler 2-stage TE cooler Not yet available for C30665 Window Option: E: G: Silicon Glass (See below for availability)

C30642E

Contextual Info: E G & G/CANADA/OPTOELEK 10 ]> • 3G3QblQ OOODGTG Dûô 'T ^ £/ / " 5 3 M CANA 0 * ÆW Electro Photodiodes ■ miff ■ O ptics C30618, C30619, C30641, C30642 ■ B DATA SHEET Large Area Planar PIN InGaAs Photodiodes ■ Large areas with uniform responsivity

C30662E

Abstract: PerkinElmer Avalanche Photodiode avalanche photodiode 1550nm sensitivity 1540nm C30645E avalanche photodiode bias avalanche photodiodes InGaAs apd photodiode photodiode Avalanche photodiode optel
Contextual Info: D A T A S H E E T Optoelectronics C30645E/C30662E Series InGaAs Avalanche Photodiode Description Applications The C30645E/C30662E are high speed, large area lnGaAs/lnP avalanche photodiodes. These devices provide high Q.E., high responsivity and low noise in the spectral range between 1100nm

C1383 NPN transistor collector base and emitter

Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
Contextual Info: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,

XC3030-70PC84C

Abstract: EPM5128LC EP330PC-15 A1020 transistor A1010B-PL68C EPM5128GM EP330PC15 EP330PC XC3042-70PC84C A1020A-PL84C
Contextual Info: ULCt Cross-Reference Matra MHS Cross reference list of devices supported for ULC conversion is not exhaustiv as new devices are added regularly. Additional devices not shown in this list, may also be supported. MHS encourages you to contact your local TEMIC sales representative

FND-100Q

Abstract: FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E
Contextual Info: High-performance emitters & detectors for the most demanding applications PerkinElmer Optoelectronics PerkinElmer Optoelectronics provides Sensor, Lighting and Digital Imaging technologies to speed the development of breakthrough applications for customers in industrial, safety & security, consumer and biomedical markets.

diode d1n914

Abstract: d1n914 DIODE d1n914 C30817E C30659-1550-R2A InGaas PIN photodiode, 1550 NEP C30950 Silicon and InGaAs APD Preamplifier Modules C30954E avalanche photodiode 1550nm sensitivity
Contextual Info: 117142_C30659.qxd 6/21/04 2:33 PM Page 1 Preliminary Data Sheet C30659-900-1060-1550nm Series Silicon and InGaAs APD Preamplifier Modules Applications Range Finding LIDAR Featur es System bandwidth 50 MHz and 200 MHz Ultra low noise equivalent power NEP

Contextual Info: KEMET Part Number: R60II3470GY30J 60II3470GY30J Capacitor, film, 0.47 uF, +/-5% Tol, -55/+105C, General Purpose, 250V@85C, Lead Spacing=15 mm L General Information T Manufacturer: Brand: H F Miscellaneous Electrical: Capacitance: Rated Temperature: S Voltage @ rated temp:

C30902S

Abstract: C30817E C30817 C30955EH
Contextual Info: Photodiodes for High-Performance Applications Avalanche Avalanche Photodiodes Silicon and InGaAs APDs Photodiodes FOR Industrial & ANALYTICAL Applications Avalanche Photodiodes – Silicon and InGaAs APDs Applications • Laser range finder • Scanning video imager

C30817E

Abstract: C30955EH
Contextual Info: PhotodiodeS฀For฀hiGh-PerFormAnce฀APPlicAtionS฀ Avalanche Photodiodes Silicon and InGaAs APDs Avalanche Photodiodes – Silicon and InGaAs APDs Applications • Laser range inder • Free space communication Product฀description hese rear entry “reach-through” silicon APDs ofer the best compromise in terms of cost and

transistor c3150

Abstract: c3271 KEMA KEUR thermostat C4108
Contextual Info: What’s New? E X PA N D E D C O M P E T I T I V E O F F E R I N G S Cross-Reference & Online Spec Sheets We have expanded our Carol Brand Electronics offering and now have more competitive crosses than anyone. Many of these cables are in stock and ready for

Contextual Info: DATASHEET Photon Detection LLAM Series 900/1060/1550/1550E Si and InGaAs Low-Light Analog APD Receiver Modules LLAM Key Features E LLAM-1550E InGasAs APD Preamplifier Modules exhibit enhanced damage threshold and greater resilience when exposed to higher optical power densities.

l6703

Abstract: L6283 l6278 L6284 L6916 l6262 A1658 SVC 561 14 C3041 A1671
Contextual Info: RVCT 3.1 Build Tools - Errors and Warnings March 2008 Introduction This document lists the errors and warning messages that can be generated by the Build Tools of the ARM RealView Compilation Tools RVCT version 3.1, including patches. RVCT 3.1 is provided with RVDS

L6284

Abstract: A1273 L6283 a1046 L6278 L6559 l6262 a1583e A1154 a1273* transistor
Contextual Info: RVCT 2.0 Build Tools - Errors and Warnings Release 1.0 – 27th August 2003 Introduction This document illustrates the errors and warning messages that are generated by the Build Tools of ARM RealView Compilation Tools 2.0 and later. If you are using ADS ADS 1.2, 1.1 or 1.0.1 or RVCT 1.2

C30817E

Contextual Info: 117142_C30659.qxd 6/21/04 2:33 PM Page 1 Preliminary Data Sheet C30659-900-1060-1550nm Series Silicon and InGaAs APD Preamplifier Modules Applications Range Finding LIDAR Featur es System bandwidth 50 MHz and 200 MHz Ultra low noise equivalent power NEP

Contextual Info: DOUBLE HETEROJUNCTION AIGaAs RED SUNLIGHT VIEWABLE DISPLAYS lliïiS iM I iiik DPTOELEETnONICS 7.6mm 0.3in 14.2mm (0.56in) 20.0mm (0.8in) MAN32X0A MAN62X0 MAN82X0 DESCRIPTION This line of solid state LED displays uses newly developed Double Heterojunction (DH) AIGaAs/GaAs