C3 MARKING Search Results

Contextual Info: 9 =W S age C3 P H Ro oir / See E - C4 E C3 N - C4 N CAPACITANCE NETWORKS - RC NETWORKS Tension nominale / Rated voltage URC V 2 3 2 3 4 1 2 3 4 0,78 0,45 C1 = C2 = C3 = C4 1 C1 1 2 3 C2 4 C3 2 C4 3 4 Sur demande / On request : C1 # C2 # C3 # C4 Consulter notre Service Commercial

2-20C8

Contextual Info: TYPE HA POLAR Case Code 2 Volts CO Cl C2 C3 C4 C5 C6 C7 C8 C9 3 Volts Cl C2 C3 C4 C5 C6 C7 C8 C9 4 Volts CO Cl C2 C3 C4 C5 C6 C7 C8 C9 6 Volts CO Cl C2 C3 C4 C5 C6 C7 C8 C9 10 Volts CO Cl CO Cl CO Cl CO Cl CO Cl CO Cl C2 C3 C4 C5 C6 C7 C8 C9 Subminiature, Leaded

KDS122

Abstract: C3-12 C312
Contextual Info: SEMICONDUCTOR KDS122 MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 C3 1 2 Item Marking Description Device Mark C3 KDS122 hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

KDS226

Abstract: MARK C3 SOT23 KDS226 LOT C-312 Marking C3 SOT23 C3-12 C312 marking C3
Contextual Info: SEMICONDUCTOR KDS226 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 C3 1 2 Item Marking Description Device Mark C3 KDS226 hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

a3 sot143

Abstract: BAR60 BAR61 VPS05178 MARKING 61s
Contextual Info: BAR60, BAR61 Silicon PIN Diodes 3
RF switch, RF attenuator for frequencies above 10 MHz 4 2 BAR60 BAR61 1 1 3 4 1 VPS05178 3 EHA07013 2 4 EHA07014 2 Type Marking Pin Configuration Package BAR60 60s 1=C1/A2/C3 2 = C2 3 = A3 4 = A1 SOT143 BAR61 61s 1=C2/C3

MB74LS04

Abstract: MB74LS quartz 12000 marking MB8850H MC74HC04 MB8850 MB74LS0 MIL-STD-202E 103A
Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS07-20101-7E Resonator Piezoelectric Resonator FAR Family C1, C3, C4 series • DESCRIPTION Fujitsu resonators (C1, C3, C4 series) feature originally developed single crystals with a high electromechanical

C2C36

Abstract: VPW09197 BAS21U SC74
Contextual Info: BAS21U Silicon Switching Diode Array 5 4 6
For high-speed switching applications
Internal galvanic isolated diodes 3 2 in one package 1 VPW09197 C1 C2 C3 6 5 4 1 2 3 A1 A2 A3 EHA07291 Type BAS21U Marking Pin Configuration Package JSs 1=A1 2=A2 3=A3 4=C3 5=C2 6=C1 SC74

marking 6c1

Abstract: BAS16U SC74
Contextual Info: BAS16U Silicon Switching Diode Array 5
For high-speed switching applications 4 6
Internal galvanic isolated diodes in one package 3 C1 C2 C3 6 5 4 2 1 VPW09197 1 2 3 A1 A2 A3 EHA07291 Type Marking BAS16U A6s Pin Configuration Package 1=A1 2=A2 3=A3 4=C3 5=C2 6=C1 SC74

SC74

Abstract: JSs diode
Contextual Info: BAS 21U Silicon Switching Diode Array
For high-speed switching applications 5 4 6
Internal galvanic isolated diodes in one package 3 C1 C2 C3 6 5 4 2 1 VPW09197 1 2 3 A1 A2 A3 EHA07291 Type Marking BAS 21U JSs Pin Configuration Package 1=A1 2=A2 3=A3 4=C3 5=C2 6=C1 SC-74

Contextual Info: BAS 16U Silicon Switching Diode Array
For high-speed switching applications 5 4 6
Internal galvanic isolated diodes in one package 3 C1 C2 C3 6 5 4 2 1 VPW09197 1 2 3 A1 A2 A3 EHA07291 Type Marking BAS 16U A6s Pin Configuration Package 1=A1 2=A2 3=A3 4=C3 5=C2 6=C1 SC-74

MB74LS04

Abstract: MB74LS MB8850H MC74HC04 MB8850
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS07-20101-7E Resonator Piezoelectric Resonator FAR Family C1, C3, C4 series • DESCRIPTION Fujitsu resonators (C1, C3, C4 series) feature originally developed single crystals with a high electromechanical coupling coefficient (LiTaO3: lithium tantalate, LiNbO3: lithium niobate), the result is compact packaging. Three

MB74LS04

Abstract: MB74LS0 MB74 MB8850H MC74HC04
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS07-20101-7E Resonator Piezoelectric Resonator FAR Family C1, C3, C4 series • DESCRIPTION Fujitsu resonators (C1, C3, C4 series) feature originally developed single crystals with a high electromechanical coupling coefficient (LiTaO3: lithium tantalate, LiNbO3: lithium niobate), the result is compact packaging. Three

DS07-10205-1E

Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS07-10205-1E Resonator Piezoelectric Resonator 4 to 20 MHz FAR Family (C3 series M/N type) • DESCRIPTION The features of the C3 series (M,N Type) resonators are compact and high stability. They are fabricated on a

entrelec terminal block

Abstract: RC55 2616
Contextual Info: 020128 T02050 D 2,5/5 C3.L Terminal blocks spring connection D 2,5/5 C3.L.L Spacing 5 mm +0,05 .198" Spacing 5 mm +0,05 (.198") for sensors/actuators DIN 3 • • center of rail center of rail Block for sensors/actuators with bidirectional green LED 24V=

Contextual Info: C3 E - C4 E C3 N - C4 N RESEAUX DE CAPACITES - RESEAUX RC CAPACITANCE NETWORKS - RC NETWORKS 50 100 200 E12E24E48 E96 479 5,6 569 ± 1 pF FU ± 0,5 pF (DU) ± 0,25 pF (CU) 4,7 pF Tension nominale / Rated voltage URC (V) 25 50 100 200 E6 E12E24 100 pF 101

Contextual Info: HD3SS3415 www.ti.com SLAS840 – MARCH 2012 4-Channel High-Performance Differential Switch GND A1C1+ C1- NC GND Top View RUA Package VDD A2+ A2- SEL GND B2+ C2+ B2- C2- VDD NC A3+ A3- B3+ NC 21 18 21 GND 22 B3GND 17 22 C3+ C3- 1 B0NC VDD B1+ B1- 38 39 42 B0+

C101E

Abstract: HD3SS3415RUA
Contextual Info: HD3SS3415 www.ti.com SLAS840 – MARCH 2012 4-Channel High-Performance Differential Switch GND A1C1+ C1- NC GND Top View RUA Package VDD A2+ A2- SEL GND B2+ C2+ B2- C2- VDD NC A3+ A3- B3+ NC 21 18 21 GND 22 B3GND 17 22 C3+ C3- 1 B0NC VDD B1+ B1- 38 39 42 B0+

Contextual Info: HD3SS3415 www.ti.com SLAS840 – MARCH 2012 4-Channel High-Performance Differential Switch GND A1C1+ C1- NC GND Top View RUA Package VDD A2+ A2- SEL GND B2+ C2+ B2- C2- VDD NC A3+ A3- B3+ NC 21 18 21 GND 22 B3GND 17 22 C3+ C3- 1 B0NC VDD B1+ B1- 38 39 42 B0+

DS07-10205-1E

Abstract: fujitsu resonator
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS07-10205-1E Resonator Piezoelectric Resonator 4 to 20 MHz FAR Family (C3 series M/N type) • DESCRIPTION The features of the C3 series (M,N Type) resonators are compact and high stability. They are fabricated on a lithium tantalate (LitaO3) substrate, producing resonators with ultra compact and superior stability due to the

DS07-10205-1E

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS07-10205-1E Resonator Piezoelectric Resonator 4 to 20 MHz FAR Family (C3 series M/N type) • DESCRIPTION The features of the C3 series (M,N Type) resonators are compact and high stability. They are fabricated on a lithium tantalate (LitaO3) substrate, producing resonators with ultra compact and superior stability due to the

DS07-10205-1E

Abstract: CAPACITOR MARKING
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS07-10205-1E Resonator Piezoelectric Resonator 4 to 20 MHz FAR Family (C3 series M/N type) • DESCRIPTION The features of the C3 series (M,N Type) resonators are compact and high stability. They are fabricated on a lithium tantalate (LitaO3) substrate, producing resonators with ultra compact and superior stability due to the

DS07-10205-1E

Abstract: fujitsu resonator
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS07-10205-1E Resonator Piezoelectric Resonator 4 to 20 MHz FAR Family (C3 series M/N type) • DESCRIPTION The features of the C3 series (M,N Type) resonators are compact and high stability. They are fabricated on a lithium tantalate (LitaO3) substrate, producing resonators with ultra compact and superior stability due to the

dmc201a

Contextual Info: DMC201A0 Silicon NPN epitaxial planar type Unit: mm For low frequency amplification • Features  Low collector-emitter saturation voltage VCE sat  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)  Marking Symbol: C3

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD Plastic-Encapsulate Diodes SOT-23 SOT-23 1SS226 SWITCHING DIODE FEATURES z Low forward voltage z Fast reverse recovery time z Small total capacitance 1 3 2 MARKING: C3 Maximum Ratings ,Single Diode @Ta=25℃